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1. 发明授权

US09199433B2 Metal laminated structure and method for producing the metal laminated structure 有权
标题翻译：金属叠层结构及其制造方法
公开(公告)号：US09199433B2
公开(公告)日：2015-12-01
申请号：US13381703
申请日：2010-06-08
申请人： Koji Nitta , Masatoshi Majima , Shinji Inazawa , Yugaku Abe , Hiroshi Yokoyama , Osamu Suwata , Shinichi Yamagata
发明人： Koji Nitta , Masatoshi Majima , Shinji Inazawa , Yugaku Abe , Hiroshi Yokoyama , Osamu Suwata , Shinichi Yamagata
IPC分类号： H01L23/373 , B32B15/01 , C23C28/02 , C25D3/66 , C25D5/10 , C25D7/06 , C25D7/12 , H01L33/64
CPC分类号： B32B15/01 , C23C28/021 , C25D3/66 , C25D5/10 , C25D7/06 , C25D7/12 , H01L23/3735 , H01L23/3736 , H01L33/641 , H01L2924/0002 , Y10T428/12826 , H01L2924/00
摘要： There is provided a metal laminated structure comprising a first metal layer, a second metal layer and a third metal layer, the first metal layer being disposed on one surface of the second metal layer, the third metal layer being disposed on the other surface of the second metal layer, the first metal layer including at least one of tungsten and molybdenum, the second metal layer including copper, the third metal layer including at least one of tungsten and molybdenum, and a method for producing the metal laminated structure.
摘要翻译：提供了包括第一金属层，第二金属层和第三金属层的金属层压结构，第一金属层设置在第二金属层的一个表面上，第三金属层设置在第二金属层的另一个表面上第二金属层，第一金属层包括钨和钼中的至少一种，第二金属层包括铜，第三金属层包括钨和钼中的至少一种，以及金属层压结构的制造方法。

2. 发明授权

US08993121B2 Metal laminated structure and method for producing the same 有权
标题翻译：金属层压结构及其制造方法
公开(公告)号：US08993121B2
公开(公告)日：2015-03-31
申请号：US13580082
申请日：2010-12-27
申请人： Koji Nitta , Shinji Inazawa , Akihisa Hosoe , Masatoshi Majima , Osamu Suwata , Hiroshi Yokoyama , Shinichi Yamagata , Yugaku Abe
发明人： Koji Nitta , Shinji Inazawa , Akihisa Hosoe , Masatoshi Majima , Osamu Suwata , Hiroshi Yokoyama , Shinichi Yamagata , Yugaku Abe
IPC分类号： B32B15/01 , C25D3/66 , H01L23/373 , C22C9/00 , C22C27/00 , C25D5/10 , C25D5/12 , H01L33/64 , C25D3/12 , C25D3/38
CPC分类号： H01L23/3735 , B32B15/01 , C22C9/00 , C22C27/00 , C22C27/04 , C25D3/12 , C25D3/38 , C25D3/66 , C25D5/10 , C25D5/12 , H01L33/641 , H01L2924/0002 , Y10T428/12632 , Y10T428/12833 , Y10T428/1284 , Y10T428/1291 , H01L2924/00
摘要： There is provided a metal laminated structure in which a first metal layer containing tungsten is provided on a first surface of a second metal layer containing copper and a third metal layer containing tungsten is provided on a second surface of the second metal layer opposite to the first surface, and the first metal layer contains crystal grains of tungsten in a form of a columnar crystal extending in a direction perpendicular to the first surface of the second metal layer and the third metal layer contains crystal grains of tungsten in a form of a columnar crystal extending in a direction perpendicular to the second surface of the second metal layer, and a method for producing the metal laminated structure.
摘要翻译：提供了一种金属层压结构，其中在包含铜的第二金属层的第一表面上提供含有钨的第一金属层，并且在与第一金属层相反的第二金属层的第二表面上设置含有钨的第三金属层并且第一金属层含有呈垂直于第二金属层的第一表面的方向延伸的柱状晶体的钨晶体，第三金属层含有柱状晶体形式的钨晶体在与第二金属层的第二表面垂直的方向上延伸的金属层压结构体的制造方法。

3. 发明授权

US06534190B1 Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same 有权
公开(公告)号：US06534190B1
公开(公告)日：2003-03-18
申请号：US10138422
申请日：2002-05-06
申请人： Shinichi Yamagata , Yugaku Abe , Makoto Imamura , Akira Fukui , Yoshishige Takano , Takatoshi Takikawa , Yoshiyuki Hirose
发明人： Shinichi Yamagata , Yugaku Abe , Makoto Imamura , Akira Fukui , Yoshishige Takano , Takatoshi Takikawa , Yoshiyuki Hirose
IPC分类号： B32B906
CPC分类号： C22C32/0063 , H01L21/4807 , H01L23/15 , H01L24/48 , H01L2224/16 , H01L2224/16225 , H01L2224/32188 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/1517 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/16152 , H01L2924/16195 , H01L2924/181 , Y10T428/24975 , Y10T428/25 , Y10T428/252 , Y10T428/26 , Y10T428/31678 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2224/05599 , H01L2224/85399
摘要： To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10−6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.

4. 发明授权

US06974558B2 Susbstrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same 有权
标题翻译：用于安装半导体器件的衬底材料，用于安装半导体器件的衬底，半导体器件及其制造方法
公开(公告)号：US06974558B2
公开(公告)日：2005-12-13
申请号：US09925427
申请日：2001-08-10
申请人： Shinichi Yamagata , Yugaku Abe , Makoto Imamura , Akira Fukui , Yoshishige Takano , Takatoshi Takikawa , Yoshiyuki Hirose
发明人： Shinichi Yamagata , Yugaku Abe , Makoto Imamura , Akira Fukui , Yoshishige Takano , Takatoshi Takikawa , Yoshiyuki Hirose
IPC分类号： B22F3/24 , C22C1/05 , C22C1/10 , C22C21/00 , C22C32/00 , C25D17/16 , H01L21/48 , H01L23/14 , H01L23/15 , B22F3/12 , B22F7/00
CPC分类号： C22C32/0063 , H01L21/4807 , H01L23/15 , H01L24/48 , H01L2224/16 , H01L2224/16225 , H01L2224/32188 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/1517 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/16152 , H01L2924/16195 , H01L2924/181 , Y10T428/24975 , Y10T428/25 , Y10T428/252 , Y10T428/26 , Y10T428/31678 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2224/05599 , H01L2224/85399
摘要： To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10−6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.
摘要翻译：为了提供由导热率为100W / m×K以上且热膨胀系数为20×10 -6〜/℃以下的铝/碳化硅复合合金制成的基板材料，为重量轻，组成均匀。由铝/碳化硅复合材料制成的基体材料，其包含Al-SiC合金组合物部件和非合金组成部分，并且其中分散有10至70重量％的碳化硅颗粒，并且其中碳化硅浓度的波动其中的Al-SiC合金组成部分在1重量％以内。基板材料通过在非氧化性气氛中在不低于600℃的温度下烧结铝/碳化硅起始粉末的压块来制造。

5. 发明授权

US06388273B1 Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same 有权
标题翻译：用于安装半导体器件的基板材料，用于安装半导体器件的基板，半导体器件及其制造方法
公开(公告)号：US06388273B1
公开(公告)日：2002-05-14
申请号：US09692162
申请日：2000-10-20
申请人： Shinichi Yamagata , Yugaku Abe , Makoto Imamura , Akira Fukui , Yoshishige Takano , Takatoshi Takikawa , Yoshiyuki Hirose
发明人： Shinichi Yamagata , Yugaku Abe , Makoto Imamura , Akira Fukui , Yoshishige Takano , Takatoshi Takikawa , Yoshiyuki Hirose
IPC分类号： H01L2315
CPC分类号： C22C32/0063 , H01L21/4807 , H01L23/15 , H01L24/48 , H01L2224/16 , H01L2224/16225 , H01L2224/32188 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/1517 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/16152 , H01L2924/16195 , H01L2924/181 , Y10T428/24975 , Y10T428/25 , Y10T428/252 , Y10T428/26 , Y10T428/31678 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2224/05599 , H01L2224/85399
摘要： To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10−6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.
摘要翻译：提供由导热率为100W / m×K以上且热膨胀系数为20×10 -6 /℃以下的铝/碳化硅复合合金制成的基材，重量轻且组成均匀。由铝/碳化硅复合材料制成的基体材料，其包含Al-SiC合金组合物部件和非合金组成部分，并且其中分散有10至70重量％的碳化硅颗粒，并且其中碳化硅浓度的波动其中的Al-SiC合金组成部分在1重量％以内。基板材料通过在非氧化性气氛中在不低于600℃的温度下烧结铝/碳化硅起始粉末的压块来制造。

6. 发明申请

US20120315502A1 METAL LAMINATED STRUCTURE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：金属层压结构及其制造方法
公开(公告)号：US20120315502A1
公开(公告)日：2012-12-13
申请号：US13580082
申请日：2010-12-27
申请人： Koji Nitta , Shinji Inazawa , Akihisa Hosoe , Masatoshi Majima , Osamu Suwata , Hiroshi Yokoyama , Shinichi Yamagata , Yugaku Abe
发明人： Koji Nitta , Shinji Inazawa , Akihisa Hosoe , Masatoshi Majima , Osamu Suwata , Hiroshi Yokoyama , Shinichi Yamagata , Yugaku Abe
IPC分类号： B32B15/01 , C25D5/10
CPC分类号： H01L23/3735 , B32B15/01 , C22C9/00 , C22C27/00 , C22C27/04 , C25D3/12 , C25D3/38 , C25D3/66 , C25D5/10 , C25D5/12 , H01L33/641 , H01L2924/0002 , Y10T428/12632 , Y10T428/12833 , Y10T428/1284 , Y10T428/1291 , H01L2924/00
摘要： There is provided a metal laminated structure in which a first metal layer containing tungsten is provided on a first surface of a second metal layer containing copper and a third metal layer containing tungsten is provided on a second surface of the second metal layer opposite to the first surface, and the first metal layer contains crystal grains of tungsten in a form of a columnar crystal extending in a direction perpendicular to the first surface of the second metal layer and the third metal layer contains crystal grains of tungsten in a form of a columnar crystal extending in a direction perpendicular to the second surface of the second metal layer, and a method for producing the metal laminated structure.
摘要翻译：提供了一种金属层压结构，其中在包含铜的第二金属层的第一表面上提供含有钨的第一金属层，并且在与第一金属层相反的第二金属层的第二表面上设置含有钨的第三金属层并且第一金属层含有呈垂直于第二金属层的第一表面的方向延伸的柱状晶体的钨晶体，第三金属层含有柱状晶体形式的钨晶体在与第二金属层的第二表面垂直的方向上延伸的金属层压结构体的制造方法。

7. 发明申请

US20120100392A1 METAL LAMINATED STRUCTURE AND METHOD FOR PRODUCING THE METAL LAMINATED STRUCTURE 有权
标题翻译：金属层压结构和金属层压结构的制造方法
公开(公告)号：US20120100392A1
公开(公告)日：2012-04-26
申请号：US13381703
申请日：2010-06-08
申请人： Koji Nitta , Masatoshi Majima , Shinji Inazawa , Yugaku Abe , Hiroshi Yokoyama , Osamu Suwata , Shinichi Yamagata
发明人： Koji Nitta , Masatoshi Majima , Shinji Inazawa , Yugaku Abe , Hiroshi Yokoyama , Osamu Suwata , Shinichi Yamagata
IPC分类号： B32B15/01 , C25D5/10 , B32B7/02
CPC分类号： B32B15/01 , C23C28/021 , C25D3/66 , C25D5/10 , C25D7/06 , C25D7/12 , H01L23/3735 , H01L23/3736 , H01L33/641 , H01L2924/0002 , Y10T428/12826 , H01L2924/00
摘要： There is provided a metal laminated structure comprising a first metal layer, a second metal layer and a third metal layer, the first metal layer being disposed on one surface of the second metal layer, the third metal layer being disposed on the other surface of the second metal layer, the first metal layer including at least one of tungsten and molybdenum, the second metal layer including copper, the third metal layer including at least one of tungsten and molybdenum, and a method for producing the metal laminated structure.
摘要翻译：提供了包括第一金属层，第二金属层和第三金属层的金属层压结构，第一金属层设置在第二金属层的一个表面上，第三金属层设置在第二金属层的另一个表面上第二金属层，第一金属层包括钨和钼中的至少一种，第二金属层包括铜，第三金属层包括钨和钼中的至少一种，以及金属层压结构的制造方法。

8. 发明授权

US06737168B1 Composite material and semiconductor device using the same 有权
标题翻译：复合材料和半导体器件使用相同
公开(公告)号：US06737168B1
公开(公告)日：2004-05-18
申请号：US09762931
申请日：2001-02-14
申请人： Shinichi Yamagata , Kazuya Kamitake , Yugaku Abe , Akira Fukui
发明人： Shinichi Yamagata , Kazuya Kamitake , Yugaku Abe , Akira Fukui
IPC分类号： B32B904
CPC分类号： H01L23/3731 , C04B35/573 , C04B41/009 , C04B41/5096 , C04B41/51 , C04B41/85 , C04B41/88 , C04B2111/00844 , H01L23/147 , H01L23/15 , H01L23/3733 , H01L23/3738 , H01L24/45 , H01L24/48 , H01L2224/16225 , H01L2224/32188 , H01L2224/32245 , H01L2224/45015 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/73253 , H01L2224/73265 , H01L2924/01019 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/16195 , H01L2924/181 , Y10S257/914 , Y10T428/249953 , Y10T428/249956 , Y10T428/249957 , C04B41/4523 , C04B35/00 , H01L2924/00014 , H01L2924/00 , H01L2924/2076 , H01L2924/00012
摘要： A composite material that consists mainly of ceramic and semi-metal, that is high in thermal conductivity, that is light in weight, and that has high compatibility in coefficient of thermal expansion (CTE) with a semiconductor element and another member comprising ceramic; a member comprising this composite material; and a semiconductor device comprising the member. The composite material has a structure in which the interstices of a three-dimensional network structure comprising ceramic are filled with a semi-metal-containing constituent produced by deposition after melting, has a CTE of 6 ppm/° C. or less, and has a thermal conductivity of 150 W/m·K or more. The semiconductor device comprises the composite material. The composite material can be obtained by filling the pores of a porous body consisting mainly of ceramic with a semi-metal-containing constituent.
摘要翻译：主要由陶瓷和半金属组成的复合材料，其导热性高，重量轻，并且与半导体元件和包含陶瓷的另一种构件具有高的热膨胀系数（CTE）的相容性高; 包含该复合材料的构件; 以及包括该构件的半导体器件。复合材料具有这样的结构，其中包含陶瓷的三维网状结构的间隙填充有熔融后通过沉积生产的含半金属的组分，其CTE为6ppm /℃或更低，并且具有导热系数为150W / mK以上。半导体器件包括复合材料。复合材料可以通过填充主要由具有半金属的成分的陶瓷组成的多孔体的孔而获得。

9. 发明授权

US06183874B2 Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same 失效
标题翻译：用于安装半导体器件的基板材料，用于安装半导体器件的基板，半导体器件及其制造方法
公开(公告)号：US06183874B2
公开(公告)日：2001-02-06
申请号：US08874543
申请日：1997-06-13
申请人： Shinichi Yamagata , Yugaku Abe , Makoto Imamura , Akira Fukui , Yoshishige Takano , Takatoshi Takikawa , Yoshiyuki Hirose
发明人： Shinichi Yamagata , Yugaku Abe , Makoto Imamura , Akira Fukui , Yoshishige Takano , Takatoshi Takikawa , Yoshiyuki Hirose
IPC分类号： H01L2315
CPC分类号： C22C32/0063 , H01L21/4807 , H01L23/15 , H01L24/48 , H01L2224/16 , H01L2224/16225 , H01L2224/32188 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/1517 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/16152 , H01L2924/16195 , H01L2924/181 , Y10T428/24975 , Y10T428/25 , Y10T428/252 , Y10T428/26 , Y10T428/31678 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2224/05599 , H01L2224/85399
摘要： To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10−6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.
摘要翻译：提供由导热率为100W / m×K以上且热膨胀系数为20×10 -6 /℃以下的铝/碳化硅复合合金制成的基材，重量轻且组成均匀。由铝/碳化硅复合材料制成的基体材料，其包含Al-SiC合金组合物部件和非合金组成部分，并且其中分散有10至70重量％的碳化硅颗粒，并且其中碳化硅浓度的波动其中的Al-SiC合金组成部分在1重量％以内。基板材料通过在非氧化性气氛中在不低于600℃的温度下烧结铝/碳化硅起始粉末的压块来制造。

10. 发明授权

US5424256A Silicon nitride sintered body 失效
标题翻译：氮化硅烧结体
公开(公告)号：US5424256A
公开(公告)日：1995-06-13
申请号：US138346
申请日：1993-10-18
申请人： Masashi Yoshimura , Takehisa Yamamoto , Shinichi Yamagata , Jin-Joo Matsui , Akira Yamakawa
发明人： Masashi Yoshimura , Takehisa Yamamoto , Shinichi Yamagata , Jin-Joo Matsui , Akira Yamakawa
IPC分类号： C04B35/593 , C04B35/599
CPC分类号： C04B35/5935
摘要： Silicon nitride sintered bodies consisting of prismatic crystal grains of Si.sub.3 N.sub.4 and/or sialon, equi-axed crystal grains of Si.sub.3 N.sub.4 and/or sialon, a grain boundary phase existing among the prismatic and equi-axed crystal grains and dispersed particles in the grain boundary phase, in which the prismatic crystal grains have an average grain size of 0.3 .mu.m or less in minor axis and an average grain size of 5 .mu.m or less in major axis, the equi-axed crystal grains have an average grain size of 0.5 .mu.m or less and the dispersed particles have an average size of 0.1 .mu.m or less, the volume of the dispersed particles being 0.05% by volume or more based on the total volume of the rest of the sintered body. The silicon nitride sintered bodies have a strength sufficient for use as structural materials of machine parts or members, with a minimized scattering of the strength as well as high reliability, superior productivity and advantageous production cost.
摘要翻译：由Si 3 N 4和/或赛隆的棱柱状晶粒构成的氮化硅烧结体，Si 3 N 4等离子晶粒和/或赛隆，棱晶相和等轴晶粒中存在的晶界相和晶界相中的分散粒子其中棱柱晶粒的短轴平均粒径为0.3μm以下，长轴的平均粒径为5μm以下，等轴晶粒的平均粒径为0.5μm m以下，分散粒子的平均粒径为0.1μm以下，相对于烧结体的其余部分的总体积，分散粒子的体积为0.05体积％以上。氮化硅烧结体具有足以用作机械部件或部件的结构材料的强度，其强度的极小散射以及高可靠性，优异的生产率和有利的生产成本。

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