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    • 6. 发明授权
    • Laser control apparatus with a current detecting and interrupting system
    • 具有电流检测和中断系统的激光控制装置
    • US06347105B1
    • 2002-02-12
    • US09411393
    • 1999-10-04
    • Tomobumi NakayamaMichiharu MasudaHisatsugu TaharaAkio ItoYukio Yokoyama
    • Tomobumi NakayamaMichiharu MasudaHisatsugu TaharaAkio ItoYukio Yokoyama
    • H01S300
    • H01S5/06825
    • An image forming apparatus is arranged to form an image with laser light emitted from a semiconductor laser source, and is constructed so as to protect the laser source from a breakdown, by regulating electric current flowing to the laser source no matter when an adjusting circuit for adjusting the light amount of the semiconductor laser source is apt to supply the electric current that could break the laser source, to the laser source. The apparatus is constructed in such structure that during an automatic light amount control period the laser light amount emitted from the semiconductor laser source is detected and a current source circuit is made inactive when the light amount detected is over a set light amount and that during periods other than the control period the electric current flowing to the semiconductor laser is detected and the current source circuit is made inactive when the light amount detected becomes over a fixed ratio times the current detected during the automatic light amount control period. In this way, the protection circuit can operate effectively anytime of emission of the laser source, so as to protect the laser source from the breakdown.
    • 图像形成装置被配置成通过从半导体激光源发射的激光形成图像,并且被构造成通过调节流向激光源的电流来保护激光源免受击穿,不管当调节电路 调整半导体激光源的光量易于将激光源的电流提供给激光源。 该装置的结构是这样一种结构,即在自动光量控制期间,检测出半导体激光源发出的激光量,并且当检测到的光量超过设定的光量时,电流源电路被激活,而在期间 当检测到的光量变得超过在自动光量控制周期期间检测到的电流的固定比率时,检测到流过半导体激光器的电流,并且检测流过半导体激光器的电流,并使电流源电路无效。 以这种方式,保护电路可以随时发射激光源,以保护激光源免受击穿。
    • 8. 发明授权
    • Electron beam tester
    • 电子束测试仪
    • US5600734A
    • 1997-02-04
    • US357983
    • 1994-12-19
    • Kazuo OkuboHironori TeguriAkio Ito
    • Kazuo OkuboHironori TeguriAkio Ito
    • G01R31/307G06K9/46G06T7/00G06K9/00
    • G06T7/0006G01R31/307G06K9/4609G06T7/0044G06T7/0085G06T2207/10061G06T2207/30121G06T2207/30148
    • An electron beam tester scans a sample with an electron beam to provide a secondary electron image, matches wiring patterns of the secondary electron image with wiring patterns prepared from CAD data, measures voltages of the wiring patterns, and corrects deformation of the secondary electron image. The electron beam tester comprises a pattern matching unit, a wiring pattern tester, a secondary electron image corrector, a wiring pattern inspection unit, and a pattern matching processor. The pattern matching unit simply and quickly matches the wiring patterns of the secondary electron image with the wiring patterns prepared from the CAD data. The wiring pattern tester detects slippage between layers of a multilayered semiconductor chip and correctly positions the electron beam on the chip during a pattern matching operation. The secondary electron image corrector accurately and automatically corrects deformation of the secondary electron image. The wiring pattern inspection unit simply and correctly determines a threshold used for preparing a binary image, to correctly carry out a pattern matching operation. The pattern matching processor accurately detects edges out of a blurred image, to correctly carry out a pattern matching operation.
    • 电子束测试仪用电子束扫描样品以提供二次电子图像,使二次电子图像的配线图案与由CAD数据制备的布线图匹配,测量布线图案的电压并校正二次电子图像的变形。 电子束测试器包括图案匹配单元,布线图案测试器,二次电子图像校正器,布线图案检查单元和图案匹配处理器。 图案匹配单元简单快速地将二次电子图像的布线图案与从CAD数据准备的布线图案相匹配。 布线图案测试仪在模式匹配操作期间检测多层半导体芯片的层之间的滑动并且将电子束正确地放置在芯片上。 二次电子图像校正器精确自动地校正二次电子图像的变形。 布线图案检查单元简单且正确地确定用于准备二值图像的阈值,以正确地执行模式匹配操作。 模式匹配处理器准确地检测模糊图像中的边缘,以正确地执行模式匹配操作。
    • 9. 发明授权
    • Electron beam apparatus for measuring a voltage of a sample
    • 用于测量样品电压的电子束装置
    • US5517028A
    • 1996-05-14
    • US341103
    • 1994-11-18
    • Akio ItoHazuhiro KakazawaTakayuki Anbe
    • Akio ItoHazuhiro KakazawaTakayuki Anbe
    • H01J37/10G01R31/307H01J37/21H01J37/244H01J37/26
    • H01J37/268G01R31/307
    • An electron beam apparatus comprises, inside of an objective lens for focussing a primary electron beam e1 and irradiating it on a sample surface, a secondary electron energy analyzer having a retarding mesh electrode for analyzing the energy of a secondary electron e2 emitted from a point on the sample surface at which the primary electron beam e1 is irradiated. The secondary electron energy analyzer comprises a collimation unit for forming one or more electrostatic lenses by a nonuniform electrical field distribution and for having an electrostatic lens collimate the trajectory of a secondary electron e2 for its injection into a retarding grids (mesh electrode). The collimation unit comprises at least three cylindrical electrodes positioned between the sample surface and the retarding grid (mesh electrode) and numbered first, second and third from the one closest to the sample surface. An external power supply module applies an appropriate voltage to each of these cylindrical electrodes for having each duo of neighboring cylindrical electrodes form an electrostatic lens.
    • 电子束装置包括在用于聚焦一次电子束e1并将其照射在样品表面上的物镜内部的二次电子能量分析器,其具有用于分析从一点上发射的二次电子e2的能量的延迟网孔电极 一次电子束e1被照射的样品表面。 二次电子能量分析仪包括:准直单元,用于通过不均匀的电场分布形成一个或多个静电透镜,并且具有使静电透镜准直二次电子e2的轨迹以将其注入延迟网格(网状电极)。 准直单元包括位于样品表面和延迟格栅(网状电极)之间的至少三个圆柱形电极,并且距离最接近样品表面的第一,第二和第三编号。 外部电源模块对这些圆柱形电极中的每一个施加适当的电压,以使相邻圆柱形电极的每个二极管形成静电透镜。
    • 10. 发明授权
    • Method of measuring a voltage with an electron beam apparatus
    • 用电子束装置测量电压的方法
    • US5300880A
    • 1994-04-05
    • US854531
    • 1992-03-19
    • Kazuo OkuboAkio ItoTakayuki AnbeHironori Teguri
    • Kazuo OkuboAkio ItoTakayuki AnbeHironori Teguri
    • G01R19/00G01R31/302G01R31/305H01L21/66G01R31/00G01N23/00
    • G01R31/305
    • A method of measuring a voltage with an electron beam apparatus considers a change in a convergence factor due to a change in an S curve, as well as an error in a secondary electron signal level with a phase of measurement being scanned at random, to accurately measure the voltage. The method measures the voltage of a voltage measuring spot on a sample, prepares an analytic voltage by superimposing a probe voltage having an average of 0 V and no correlation with the measured voltage on the measured voltage, measures a secondary electron signal level with the analytic voltage, computes a convergence factor around a slice level set on the S curve according to a correlation between the secondary electron signal level and the probe voltage and according to an autocorrelation of the probe voltage, and updates the analytic voltage according to the convergence factor, thereby updating the measured voltage.
    • 用电子束装置测量电压的方法考虑到S曲线的变化引起的会聚因子的变化以及随机扫描测量相位的二次电子信号电平的误差,以准确地 测量电压。 该方法测量样品上的电压测量点的电压,通过将平均值为0 V的探针电压叠加在测量电压上与测量电压无关,准备分析电压,用分析仪测量二次电子信号电平 根据二次电子信号电平和探针电压之间的相关关系,根据探头电压的自相关计算S曲线周围设置的限幅电平周围的收敛系数,并根据收敛因数更新分析电压, 从而更新测量的电压。