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1. 发明申请

US20160306009A1 SYSTEMATIC DEFECTS INSPECTION METHOD WITH COMBINED EBEAM INSPECTION AND NET TRACING CLASSIFICATION 审中-公开
标题翻译：具有组合的EBEAM检查和网络跟踪分类的系统缺陷检查方法
公开(公告)号：US20160306009A1
公开(公告)日：2016-10-20
申请号：US14689088
申请日：2015-04-17
申请人： GLOBALFOUNDRIES Inc.
发明人： Weihong GAO , Xuefeng ZENG , Yan PAN , Peter LIN , Hoang NGUYEN , Ho Young SONG
IPC分类号： G01R31/305
CPC分类号： G01R31/305 , G01R31/307
摘要： A method and apparatus for separating real DVC via defects from nuisance based on Net Tracing Classification of eBeam VC die comparison inspection results are provided. Embodiments include performing an eBeam VC die comparison inspection on each via of a plurality of dies; determining DVC vias based on the comparison; performing a Net Tracing Classification on the DVC vias; determining S/D DVC vias based on the Net Tracing Classification; and performing a die repeater analysis on the S/D DVC vias to determine systematic design-related DVC via defects.
摘要翻译：提供了一种基于eBeam VC跟踪分类的虚拟DV模块比较检查结果，通过缺陷与真实DVC分离真实DVC的方法和装置。实施例包括对多个管芯的每个通孔执行eBeam VC管芯比较检查; 根据比较确定DVC通孔; 对DVC通道进行净跟踪分类; 根据网络跟踪分类确定S / D DVC通道; 并对S / D DVC通孔进行芯片中继器分析，以通过缺陷确定与系统设计相关的DVC。

2. 发明申请

US20160299103A1 APPLICATION OF ELECTRON-BEAM INDUCED PLASMA PROBES TO INSPECTION, TEST, DEBUG AND SURFACE MODIFICATIONS 审中-公开
标题翻译：电子束诱导等离子体探针在检测，测试，调试和表面改性中的应用
公开(公告)号：US20160299103A1
公开(公告)日：2016-10-13
申请号：US15026953
申请日：2014-10-02
申请人： PHOTON DYNAMICS INC.
发明人： Nedal Saleh , Daniel Toet , Enrique Sterling , Ronen Loewinger , Sriram Krishnaswami , Arie Glazer
IPC分类号： G01N27/70 , H01J37/32
CPC分类号： G01N27/70 , G01R31/305 , H01J33/00 , H01J37/3233 , H01J37/32449 , H01J37/32825 , H01J2237/063 , H01J2237/164 , H01J2237/188 , H01J2237/317 , H05H2240/10 , H05H2245/123
摘要： An electron-beam induced plasmas is utilized to establish a non-mechanical, electrical contact to a device of interest. This plasma source may be referred to as atmospheric plasma source and may be configured to provide a plasma column of very fine diameter and controllable characteristics. The plasma column traverses the atmospheric space between the plasma source into the atmosphere and the device of interest and acts as an electrical path to the device of interest in such a way that a characteristic electrical signal can be collected from the device. Additionally, by controlling the gases flowing into the plasma column the probe may be used for surface modification, etching and deposition.
摘要翻译：利用电子束诱导的等离子体来建立与感兴趣的器件的非机械的电接触。该等离子体源可以被称为大气等离子体源，并且可以被配置为提供非常细的直径和可控特性的等离子体柱。等离子体柱穿过等离子体源之间的大气空间到大气中和感兴趣的器件，并且作为到目的器件的电通路，使得可以从器件收集特征电信号。此外，通过控制流入等离子体柱的气体，探针可用于表面改性，蚀刻和沉积。

3. 发明授权

US09244112B2 Method for detecting an electrical defect of contact/via plugs 有权
标题翻译：用于检测接触/通孔塞的电气缺陷的方法
公开(公告)号：US09244112B2
公开(公告)日：2016-01-26
申请号：US14275437
申请日：2014-05-12
申请人： MACRONIX International Co., Ltd.
发明人： Hsiang-Chou Liao , Tuung Luoh , Ling-Wuu Yang , Ta-Hone Yang , Kuang-Chao Chen
IPC分类号： H01L21/66 , G01R31/04 , H01J37/22 , H01J37/244 , H01J37/28 , G01R31/305
CPC分类号： G01R31/04 , G01R31/305 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/049 , H01J2237/063 , H01J2237/221 , H01J2237/24592 , H01J2237/2594 , H01J2237/28 , H01J2237/2817 , H01L22/12 , H01L22/14
摘要： A method for detecting an electrical defect of contact/via plugs is provided. In the method, the contact/via plugs are monitored by an electron-beam (E-Beam) inspection tool to capture an image with a VC (voltage contrast) difference, and then an image extraction is performed on the image with the VC difference, wherein the image extraction is based on Target gray level/back ground gray level. The extracted image is contrasted with a layout design base to obtain a blind contact or Quasi-blind issue of contact/via plugs. A grayscale value of the VC difference having the blind contact or Quasi-blind issue is compared with a determined range of grayscale value to determine whether the VC difference is abnormal.
摘要翻译：提供一种用于检测接触/通孔的电气缺陷的方法。在该方法中，通过电子束（E-Beam）检查工具来监视接触/通孔塞以捕获具有VC（电压对比度）差异的图像，然后对具有VC差异的图像执行图像提取，其中所述图像提取基于目标灰度/背景灰度级。提取的图像与布局设计基础形成对照，以获得接触/通孔插头的盲接或准盲问题。将具有盲接或准盲问题的VC差的灰阶值与确定的灰度值范围进行比较，以确定VC差异是否异常。

4. 发明申请

US20150198648A1 DETECTING OPEN AND SHORT OF CONDUCTORS 有权
标题翻译：检测开路和短路
公开(公告)号：US20150198648A1
公开(公告)日：2015-07-16
申请号：US14153982
申请日：2014-01-13
申请人： APPLIED MATERIALS ISRAEL, LTD.
发明人： Amir Shoham , Alon Litman
IPC分类号： G01R31/02 , G01R31/305
CPC分类号： G01R31/305 , G01R31/2812 , G01R31/2853
摘要： A system and a method for evaluating a conductor, the method may include: illuminating a first area of a conductor by a first electron beam thereby charging the first area; illuminating by a second electron beam a second area of the conductor; and wherein an aggregate size of the first and second areas is a fraction of an overall size of the conductor; detecting, by a detector, detected emitted electrons that were emitted substantially from the second area and generating detection signals indicative of the detected emitted electrons; and processing, by a processor, the detection signals to provide information about a conductivity of the conductor.
摘要翻译：一种用于评估导体的系统和方法，所述方法可以包括：通过第一电子束照射导体的第一区域，从而对第一区域充电; 通过第二电子束照射导体的第二区域; 并且其中所述第一和第二区域的聚集体尺寸是所述导体的总体尺寸的一部分; 通过检测器检测基本上从第二区域发射的检测到的发射电子并产生指示检测到的发射电子的检测信号; 以及由处理器处理检测信号以提供关于导体的导电性的信息。

5. 发明授权

US08048600B2 Parameter extracting method 有权
标题翻译：参数提取方法
公开(公告)号：US08048600B2
公开(公告)日：2011-11-01
申请号：US11261790
申请日：2005-10-31
申请人： Kozo Ogino
发明人： Kozo Ogino
IPC分类号： G03F9/00
CPC分类号： G01R31/305 , Y10S430/143
摘要： A parameter extracting method capable of accurately and effectively extracting parameters used for charged particle beam exposure. The method comprises the steps of forming an unknown parameter layer on a known parameter layer, forming a resist on the unknown parameter layer, subjecting the resist to exposure through patterns changed in an existing range, and extracting parameters of the unknown parameter layer using the exposure result. In the parameter extraction method, parameters of layers lower than the unknown parameter layer are known. Therefore, layer combinations to be considered and the number of experimental data can be drastically reduced. After parameter extraction of the unknown parameter layer, an unknown parameter layer is newly formed on the layer. Then, the parameter thereof is extracted in the same manner. Thus, the parameter is extracted sequentially from lower layers and therefore, the parameter in the multitiered structure having various layer combinations can be accurately and effectively extracted.
摘要翻译：一种参数提取方法，能够准确有效地提取用于带电粒子束曝光的参数。该方法包括以下步骤：在已知参数层上形成未知参数层，在未知参数层上形成抗蚀剂，通过在现有范围内改变的图案对抗蚀剂进行曝光，以及使用曝光提取未知参数层的参数结果。在参数提取方法中，已知低于未知参数层的层的参数。因此，要考虑的层组合和实验数据的数量可以大大降低。在参数提取未知参数层后，在层上新建一个未知参数层。然后，以相同的方式提取其参数。因此，从下层顺序提取参数，因此可以准确有效地提取具有各种层组合的多层结构中的参数。

6. 发明授权

US08040504B2 Defect inspecting method and defect inspecting apparatus 有权
标题翻译：缺陷检查方法和缺陷检查装置
公开(公告)号：US08040504B2
公开(公告)日：2011-10-18
申请号：US12376407
申请日：2007-08-07
申请人： Misako Saito , Teruyuki Hayashi , Kaoru Fujiwara
发明人： Misako Saito , Teruyuki Hayashi , Kaoru Fujiwara
IPC分类号： G01N21/00
CPC分类号： G01N23/2251 , G01N21/956 , G01N2223/646 , G01R31/2831 , G01R31/305 , G01R31/307 , G01R31/308 , G01R31/311 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Provided is a method and apparatus for inspecting a defect of a shape formed on a substrate. Primary inspection is sequentially performed on specific patterns in a plurality of divided regions of the substrate by using an optical method, and one or more regions on which secondary inspection is to be performed are selected from the regions. One or more defects are detected by performing the secondary inspection using an electron beam on the selected regions.
摘要翻译：提供了一种用于检查形成在基板上的形状的缺陷的方法和装置。通过使用光学方法在基板的多个分割区域中的特定图案上依次执行初次检查，并且从该区域中选择要进行二次检查的一个或多个区域。通过使用所选择的区域上的电子束执行二次检查来检测一个或多个缺陷。

7. 发明授权

US08009299B2 Method for beam calibration and usage of a calibration body 有权
标题翻译：用于光束校准和使用校准体的方法
公开(公告)号：US08009299B2
公开(公告)日：2011-08-30
申请号：US11813334
申请日：2006-01-05
申请人： Matthias Brunner , Ralf Schmid , Bernhard Mueller , Axel Wenzel
发明人： Matthias Brunner , Ralf Schmid , Bernhard Mueller , Axel Wenzel
IPC分类号： G01B11/14
CPC分类号： G09G3/006 , G01R31/305 , G01R31/308 , G01R35/005 , H01J2237/2826
摘要： The invention relates to a method of calibration of the beam position of a corpuscular beam. A calibration body with structures is used, wherein the structures have a structure period PS in the plain section and within each structure there is a position L intended for the measurement. For the calibration, at least one detection signal each at structures in the plain section of the calibration body is generated, wherein the corpuscular beam is deflected with deflectors on beam target positions L1 with the beam target period P1, which is larger than half of the structure period PS, whereby a basic calibration is used for the control of the deflectors, and wherein the beam target deflections deviate either in the beam target period P1 from the structure period PS and/or in the beam target position L1 from the position L.
摘要翻译：本发明涉及一种校准红细胞束的束位置的方法。使用具有结构的校准体，其中结构在平坦部分中具有结构周期PS，并且在每个结构内具有用于测量的位置L. 对于校准，生成校准体的平坦部分中的结构处的至少一个检测信号，其中，粒子束在束目标位置L1上被偏转器偏转，其中光束目标周期P1大于结构周期PS，由此使用基准校准来控制偏转器，并且其中光束目标偏转在光束目标周期P1中与结构周期PS和/或从位置L的光束目标位置L1偏离。

8. 发明授权

US07919972B2 Integrated substrate transfer module 有权
标题翻译：集成基板传输模块
公开(公告)号：US07919972B2
公开(公告)日：2011-04-05
申请号：US12016834
申请日：2008-01-18
申请人： Shinichi Kurita , Emanuel Beer , Hung T. Nguyen , Benjamin Johnston , Fayez E. Abboud
发明人： Shinichi Kurita , Emanuel Beer , Hung T. Nguyen , Benjamin Johnston , Fayez E. Abboud
IPC分类号： G01R13/00 , G01R31/02
CPC分类号： G09G3/006 , G01R31/2893 , G01R31/305
摘要： A system and method for supporting and transferring a substrate relative to a plurality of testing columns are provided. The system includes a testing table adapted to support and move the substrate relative to the plurality of testing columns. The testing table may include an end effector disposed therein to transfer the substrate relative to an upper surface of the testing table. The method includes transferring the substrate to the testing table and moving the substrate relative to the plurality of testing columns. Signals indicative of electronic device performance are sensed to determine operability of the devices on the substrate.
摘要翻译：提供了一种用于相对于多个测试柱支撑和传送衬底的系统和方法。该系统包括适于相对于多个测试柱支撑和移动衬底的测试台。测试台可以包括设置在其中的端部执行器，以相对于测试台的上表面传送衬底。该方法包括将衬底转移到测试台并相对于多个测试柱移动衬底。感测指示电子设备性能的信号以确定衬底上的器件的可操作性。

9. 发明授权

US07495457B2 Semiconductor device evaluation method and apparatus using the same 失效
标题翻译：半导体装置的评价方法及使用该装置的装置
公开(公告)号：US07495457B2
公开(公告)日：2009-02-24
申请号：US12042195
申请日：2008-03-04
申请人： Masayoshi Danbata
发明人： Masayoshi Danbata
IPC分类号： G01R31/305
CPC分类号： G01R31/305
摘要： In order to provide a semiconductor device evaluation method and a semiconductor device evaluation apparatus for correctly detecting an error position and providing a substrate for observing a cross section without difficulties, a transport unit of a SEM apparatus moves a substrate on a stage. A detection unit detects electric information of observed objects including an error position arranged on the substrate. A calculating unit calculates integrals based on the electric information in at least first and second directions among directions in which arrays of the observed objects are arranged, detects a first waveform obtained by calculating the integral in the first direction and detects a second waveform obtained by calculating the integral in the second direction, wherein the first waveform includes a peak which contains the array of the observed objects including the error position and is larger than at least one of the other peaks, and wherein the second integral-waveform has peaks of substantially the same height. A control unit controls the transport unit so as to move the semiconductor substrate in a direction for maintaining the peak of the first waveform that includes the error position and controls the calculating unit to count the peaks of the second waveform.
摘要翻译：为了提供半导体器件评估方法和用于正确地检测错误位置并提供用于观察横截面的基板的半导体器件评估装置，SEM装置的传送单元将基板移动到台上。检测单元检测包括布置在基板上的错误位置的观察对象的电信息。计算单元基于在观察对象的阵列中布置的方向中的至少第一和第二方向上的电信息来计算积分，检测通过计算第一方向的积分而获得的第一波形，并且检测通过计算获得的第二波形在第二方向上的积分，其中第一波形包括包含包括误差位置的观察对象的阵列的峰值，并且大于其它峰值中的至少一个峰值，并且其中第二积分波形具有基本上为相同的高度控制单元控制传送单元，以使半导体衬底沿包括误差位置的第一波形的峰值的方向移动，并控制计算单元对第二波形的峰值进行计数。

10. 发明申请

US20080164410A1 Emission detecting analysis system and method of detecting emission on object 审中-公开
标题翻译：发射检测分析系统和物体发射检测方法
公开(公告)号：US20080164410A1
公开(公告)日：2008-07-10
申请号：US12004288
申请日：2007-12-20
申请人： Ho-Jin Lee
发明人： Ho-Jin Lee
IPC分类号： G21K7/00
CPC分类号： H01J37/28 , G01R31/305 , H01J37/228 , H01J37/244 , H01J37/256 , H01J2237/2445 , H01J2237/2482 , H01J2237/2808 , H01J2237/2817 , H01J2237/3174
摘要： According to an emission detecting analysis system and method, a test target is placed on a stage inside a chamber. A scanning electron microscope (SEM) column is installed at the chamber to obtain an image of the test target, and an emission detector column is installed at the chamber to detect light emission of the test target. High-magnification emission analysis and accurate detection of an emission point at a test target are obtained. In addition, a physical structure of the emission point is analyzed at the test target to reduce time required for analyzing a failure.
摘要翻译：根据排放检测分析系统和方法，将测试对象放置在室内的台上。在室上安装扫描电子显微镜（SEM）柱以获得测试对象的图像，并且在室处安装发射检测器柱以检测测试对象的光发射。获得高倍率放射性分析和准确检测测试目标的发射点。此外，在测试目标处分析发射点的物理结构，以减少分析故障所需的时间。

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