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1. 发明授权

US07045786B2 Method of photocarrier radiometry of semiconductors 有权
公开(公告)号：US07045786B2
公开(公告)日：2006-05-16
申请号：US10797607
申请日：2004-03-11
申请人： Andreas Mandelis , Derrick Shaughnessy , Jerias Alves Batista , Jose A. Garcia
发明人： Andreas Mandelis , Derrick Shaughnessy , Jerias Alves Batista , Jose A. Garcia
IPC分类号： G01J5/02
CPC分类号： G01N21/17
摘要： The present invention relates to metrologic methodologies and instrumentation, in particular laser-frequency domain infrared photocarrier radiometry (PCR), for contamination and defect mapping and measuring electronic properties in industrial Si wafers, devices and other semiconducting materials. In particular the invention relates to the measurement of carrier recombination lifetime, τ, carrier diffusivity, D, surface recombination velocities, S, carrier diffusion lengths, L, and carrier mobility, μ, as well as heavy metal contamination mapping, ion implantation mapping over a wide range of dose and energy, and determination of the concentration of mobile impurities in SiO2 layers on semiconductor substrates. The present invention provides a method and complete photocarrier radiometric apparatus comprising novel signal generation and analysis techniques (carrier-wave interferometry) as well as novel instrumental hardware configurations based on the physical principle of photocarrier radiometry. The method comprises (a) optical excitation of the sample with a modulated optical excitation source and (b) detection of the recombination-induced infrared emission while filtering any Planck-mediated emissions. The present invention provides an instrumental method for detecting weak inhomogeneities among semiconducting materials that are not possible to detect with conventional single-ended photocarrier radiometry. The method comprises (a) irradiating both sides of the sample with modulated optical excitation sources that are 180 degrees out of phase with respect to one another and (b) monitoring the diffusion of the interfering, separately generated carrier waves through the corresponding recombination-induced IR emissions for PCR detection, or the use of an alternative detection scheme that monitors a sample property dependent on the carrier wave transport in the sample.

2. 发明授权

US08804106B2 System and method for nondestructively measuring concentration and thickness of doped semiconductor layers 有权
标题翻译：用于非破坏性地测量掺杂半导体层的浓度和厚度的系统和方法
公开(公告)号：US08804106B2
公开(公告)日：2014-08-12
申请号：US13530774
申请日：2012-06-22
申请人： NanChang Zhu , Derrick Shaughnessy , Houssam Chouaib , Yaolei Zheng , Lu Yu , Jianli Cui , Jin An , Jianou Shi
发明人： NanChang Zhu , Derrick Shaughnessy , Houssam Chouaib , Yaolei Zheng , Lu Yu , Jianli Cui , Jin An , Jianou Shi
IPC分类号： G01N21/00 , G01B11/28
CPC分类号： G01B11/0633 , G01N21/1717 , G01N21/55 , G01N21/8422 , G01N21/9501 , G01N2021/1719 , G01N2021/8427
摘要： The disclosure is directed to nondestructive systems and methods for simultaneously measuring active carrier concentration and thickness of one or more doped semiconductor layers. Reflectance signals may be defined as functions of active carrier concentration and thickness varying over different wavelengths and over different incidence angles of analyzing illumination reflected off the surface of an analyzed sample. Systems and methods are provided for collecting a plurality of reflectance signals having either different wavelengths or different incidence angle ranges to extract active carrier density and thickness of one or more doped semiconductor layers.
摘要翻译：本公开涉及用于同时测量一个或多个掺杂半导体层的有源载流子浓度和厚度的非破坏性系统和方法。反射信号可以被定义为在不同波长上变化的有效载流子浓度和厚度的函数以及从分析样品的表面反射的分析照射的不同入射角的函数。提供了系统和方法来收集具有不同波长或不同入射角范围的多个反射信号，以提取一个或多个掺杂半导体层的有效载流子密度和厚度。

3. 发明申请

US20130003050A1 SYSTEM AND METHOD FOR NONDESTRUCTIVELY MEASURING CONCENTRATION AND THICKNESS OF DOPED SEMICONDUCTOR LAYERS 有权
标题翻译：用于非结构测量浓度和掺杂半导体层厚度的系统和方法
公开(公告)号：US20130003050A1
公开(公告)日：2013-01-03
申请号：US13530774
申请日：2012-06-22
申请人： NanChang Zhu , Derrick Shaughnessy , Houssam Chouaib , Yaolei Zheng , Lu Yu , Jianli Cui , Jin An , Jianou Shi
发明人： NanChang Zhu , Derrick Shaughnessy , Houssam Chouaib , Yaolei Zheng , Lu Yu , Jianli Cui , Jin An , Jianou Shi
IPC分类号： G01B11/06 , G01N21/88 , G01N21/47
CPC分类号： G01B11/0633 , G01N21/1717 , G01N21/55 , G01N21/8422 , G01N21/9501 , G01N2021/1719 , G01N2021/8427
摘要： The disclosure is directed to nondestructive systems and methods for simultaneously measuring active carrier concentration and thickness of one or more doped semiconductor layers. Reflectance signals may be defined as functions of active carrier concentration and thickness varying over different wavelengths and over different incidence angles of analyzing illumination reflected off the surface of an analyzed sample. Systems and methods are provided for collecting a plurality of reflectance signals having either different wavelengths or different incidence angle ranges to extract active carrier density and thickness of one or more doped semiconductor layers.
摘要翻译：本公开涉及用于同时测量一个或多个掺杂半导体层的有源载流子浓度和厚度的非破坏性系统和方法。反射信号可以被定义为在不同波长上变化的有效载流子浓度和厚度的函数以及从分析样品的表面反射的分析照射的不同入射角的函数。提供了系统和方法来收集具有不同波长或不同入射角范围的多个反射信号，以提取一个或多个掺杂半导体层的有效载流子密度和厚度。

4. 发明申请

US20100328670A1 SYSTEM AND METHOD FOR PERFORMING PHOTOTHERMAL MEASUREMENTS AND RELAXATION COMPENSATION 失效
标题翻译：用于执行光热测量和放松补偿的系统和方法
公开(公告)号：US20100328670A1
公开(公告)日：2010-12-30
申请号：US12494734
申请日：2009-06-30
申请人： Lawrence D. Rotter , David Y. Wang , Derrick Shaughnessy , Mark Senko
发明人： Lawrence D. Rotter , David Y. Wang , Derrick Shaughnessy , Mark Senko
IPC分类号： G01N21/55
CPC分类号： G01N21/1717 , G01N2021/1731 , G01N2021/1761
摘要： A device and methods for performing a photothermal measurement and relaxation compensation of a sample are disclosed. The device may include a probe beam source, a pump beam source, a sample, and a detector array. A method may include adjusting an intensity modulated pump beam power, adjusting a probe beam power to increase a response measurement location temperature and increase a modulated optical reflectance signal, directing the intensity modulated pump beam and the probe beam along a measurement path to a response measurement location on a sample for periodically exciting a region on the sample, detecting a reflected portion of the probe beam, and calculating an implantation dose.
摘要翻译：公开了一种用于进行样品的光热测量和松弛补偿的装置和方法。该装置可以包括探针束源，泵浦束源，样本和检测器阵列。方法可以包括调整强度调制的泵浦光束功率，调整探测光束功率以增加响应测量位置温度并增加经调制的光反射信号，将强度调制的泵浦光束和探测光束沿测量路径引导到响应测量定位在样品上以周期性地激发样品上的区域，检测探测光束的反射部分，以及计算植入剂量。

5. 发明授权

US08111399B2 System and method for performing photothermal measurements and relaxation compensation 失效
标题翻译：进行光热测量和放松补偿的系统和方法
公开(公告)号：US08111399B2
公开(公告)日：2012-02-07
申请号：US12494734
申请日：2009-06-30
申请人： Lawrence D. Rotter , David Y. Wang , Derrick Shaughnessy , Mark Senko
发明人： Lawrence D. Rotter , David Y. Wang , Derrick Shaughnessy , Mark Senko
IPC分类号： G01N21/55
CPC分类号： G01N21/1717 , G01N2021/1731 , G01N2021/1761
摘要： A device and methods for performing a photothermal measurement and relaxation compensation of a sample are disclosed. The device may include a probe beam source, a pump beam source, a sample, and a detector array. A method may include adjusting an intensity modulated pump beam power, adjusting a probe beam power to increase a response measurement location temperature and increase a modulated optical reflectance signal, directing the intensity modulated pump beam and the probe beam along a measurement path to a response measurement location on a sample for periodically exciting a region on the sample, detecting a reflected portion of the probe beam, and calculating an implantation dose.
摘要翻译：公开了一种用于进行样品的光热测量和松弛补偿的装置和方法。该装置可以包括探针束源，泵浦束源，样本和检测器阵列。方法可以包括调整强度调制的泵浦光束功率，调整探测光束功率以增加响应测量位置温度并增加经调制的光反射信号，将强度调制的泵浦光束和探测光束沿测量路径引导到响应测量定位在样品上以周期性地激发样品上的区域，检测探测光束的反射部分，以及计算植入剂量。

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