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    • 2. 发明申请
    • ITERATIVE DEMODULATION AND DECODING FOR MULTI-PAGE MEMORY ARCHITECTURE
    • 多媒体存储器架构的迭代解码和解码
    • US20110280069A1
    • 2011-11-17
    • US12781780
    • 2010-05-17
    • Ara PatapoutianDeepak SridharaBruce D. Buch
    • Ara PatapoutianDeepak SridharaBruce D. Buch
    • G11C16/04G11C16/06
    • G11C11/5642G11C2029/0411
    • Methods and systems for accessing encoded data stored in a solid state non-volatile memory device include iteratively demodulating and decoding the data. The memory device includes memory cells arranged to store multiple bits of data per memory cell. The memory cells are capable of storing multiple pages of data. Each bit stored in a memory cell is associated with a page of data that is different from other pages associated with other bits stored in the memory cell. The multiple pages are demodulated responsive to sensed voltage levels of the memory cells, and a demodulated output is provided for each page of the multiple pages. A decoded output for each page of the multiple pages is generated. Decoding the page and demodulating the multiple pages proceeds iteratively, including an exchange of information between the decoder and the demodulator.
    • 访问存储在固态非易失性存储器件中的编码数据的方法和系统包括对数据进行迭代解调和解码。 存储器件包括存储器单元,其被布置为存储每个存储器单元的多个位数据。 存储单元能够存储多页数据。 存储在存储器单元中的每个位与与存储在存储单元中的其它位相关的其它页不同的数据页相关联。 响应于感测的存储器单元的电压电平对多页进行解调,并且为多页的每一页提供解调输出。 生成多页的每一页的解码输出。 对页面进行解码并解调多个页面进行迭代,包括解码器和解调器之间的信息交换。
    • 3. 发明授权
    • Iterative demodulation and decoding for multi-page memory architecture
    • 用于多页存储器架构的迭代解调和解码
    • US08406051B2
    • 2013-03-26
    • US12781780
    • 2010-05-17
    • Ara PatapoutianDeepak SridharaBruce D. Buch
    • Ara PatapoutianDeepak SridharaBruce D. Buch
    • G11C16/04
    • G11C11/5642G11C2029/0411
    • Methods and systems for accessing encoded data stored in a solid state non-volatile memory device include iteratively demodulating and decoding the data. The memory device includes memory cells arranged to store multiple bits of data per memory cell. The memory cells are capable of storing multiple pages of data. Each bit stored in a memory cell is associated with a page of data that is different from other pages associated with other bits stored in the memory cell. The multiple pages are demodulated responsive to sensed voltage levels of the memory cells, and a demodulated output is provided for each page of the multiple pages. A decoded output for each page of the multiple pages is generated. Decoding the page and demodulating the multiple pages proceeds iteratively, including an exchange of information between the decoder and the demodulator.
    • 访问存储在固态非易失性存储器件中的编码数据的方法和系统包括对数据进行迭代解调和解码。 存储器件包括存储器单元,其被布置为存储每个存储器单元的多个位数据。 存储单元能够存储多页数据。 存储在存储器单元中的每个位与与存储在存储单元中的其它位相关的其它页不同的数据页相关联。 响应于感测的存储器单元的电压电平对多页进行解调,并且为多页的每一页提供解调输出。 生成多页的每一页的解码输出。 对页面进行解码并解调多个页面进行迭代,包括解码器和解调器之间的信息交换。
    • 4. 发明授权
    • Opportunistic decoding in memory systems
    • 内存系统中的机会解码
    • US08627175B2
    • 2014-01-07
    • US12891490
    • 2010-09-27
    • Ara PatapoutianBernardo RubBruce D. Buch
    • Ara PatapoutianBernardo RubBruce D. Buch
    • G11C29/00
    • G06F11/1008G06F11/1048G11C16/26G11C29/844H03M13/1108H03M13/1111H03M13/3707H03M13/45H03M13/451H03M13/458
    • Approaches for decoding data read from memory cells of a nonvolatile, solid state memory involve attempting to decode hard data using a hard decoding process prior to a time that soft data is available to the decoder. The hard data includes information about the digital symbols stored in the memory cells without data confidence information. The soft data includes information about the digital symbols stored in the memory cells and data confidence information. In response to the hard decoding process failing to achieve convergence, after the soft data becomes available to the decoder, the soft data is decoded using a soft decoding process. The decoder generates an output of the decoded data after the hard decoding process or the soft decoding process achieves convergence.
    • 用于解码从非易失性固态存储器的存储器单元读取的数据的方法包括在软数据可用于解码器的时间之前尝试使用硬解码处理对硬数据进行解码。 硬数据包括关于存储在存储器单元中的数字符号的信息,而没有数据置信度信息。 软数据包括关于存储在存储单元中的数字符号和数据置信度的信息。 响应于难以实现收敛的硬解码处理,在软数据变得可用于解码器之后,使用软解码处理解码软数据。 在硬解码处理或软解码处理实现收敛之后,解码器生成解码数据的输出。
    • 5. 发明申请
    • OUTER CODE PROTECTION FOR SOLID STATE MEMORY DEVICES
    • 固态存储器件的外部代码保护
    • US20110296272A1
    • 2011-12-01
    • US12790120
    • 2010-05-28
    • Bernardo RubAra PatapoutianArvind SridharanBruce D. Buch
    • Bernardo RubAra PatapoutianArvind SridharanBruce D. Buch
    • H03M13/29G06F11/10
    • G06F11/1012
    • Outer code words can span multiple data blocks, multiple die, or multiple chips of a memory device to protect against errors in the data stored in the blocks, die and/or chips. A solid state memory device is arranged in multiple data blocks, each block including an array of memory cells arranged in a plurality of pages. The data is encoded into inner code words and symbol-based outer code words. The inner code words and the symbol-based outer code words are stored in the memory cells of the multiple blocks. One or more inner code words are stored in each page of each block and one or more symbols of each outer code word are stored in at least one page of each block. The inner code words and the outer code words are read from the memory device and are used to correct the errors in the data.
    • 外码字可以跨越存储器设备的多个数据块,多个芯片或多个芯片,以防止存储在块,芯片和/或芯片中的数据中的错误。 固态存储器件被布置在多个数据块中,每个块包括以多页布置的存储器单元的阵列。 数据被编码成内码字和基于符号的外码字。 内码字和基于符号的外码字被存储在多个块的存储单元中。 一个或多个内部码字被存储在每个块的每个页面中,并且每个外部码字的一个或多个符号被存储在每个块的至少一个页面中。 内部码字和外部码字从存储器件读取并用于校正数据中的错误。
    • 9. 发明授权
    • Outer code protection for solid state memory devices
    • 固态存储器件的外部代码保护
    • US08572457B2
    • 2013-10-29
    • US12790120
    • 2010-05-28
    • Bernardo RubAra PatapoutianArvind SridharanBruce D. Buch
    • Bernardo RubAra PatapoutianArvind SridharanBruce D. Buch
    • H03M13/00G11C29/00G06F11/00
    • G06F11/1012
    • Outer code words can span multiple data blocks, multiple die, or multiple chips of a memory device to protect against errors in the data stored in the blocks, die and/or chips. A solid state memory device is arranged in multiple data blocks, each block including an array of memory cells arranged in a plurality of pages. The data is encoded into inner code words and symbol-based outer code words. The inner code words and the symbol-based outer code words are stored in the memory cells of the multiple blocks. One or more inner code words are stored in each page of each block and one or more symbols of each outer code word are stored in at least one page of each block. The inner code words and the outer code words are read from the memory device and are used to correct the errors in the data.
    • 外码字可以跨越存储器设备的多个数据块,多个芯片或多个芯片,以防止存储在块,芯片和/或芯片中的数据中的错误。 固态存储器件被布置在多个数据块中,每个块包括以多页布置的存储器单元的阵列。 数据被编码成内码字和基于符号的外码字。 内码字和基于符号的外码字被存储在多个块的存储单元中。 一个或多个内部码字被存储在每个块的每个页面中,并且每个外部码字的一个或多个符号被存储在每个块的至少一个页面中。 内部码字和外部码字从存储器件读取并用于校正数据中的错误。