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1. 发明申请

US20080279442A1 Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method 有权
标题翻译：检测方法和装置，光刻设备，光刻处理单元和器件制造方法
公开(公告)号：US20080279442A1
公开(公告)日：2008-11-13
申请号：US11798039
申请日：2007-05-09
申请人： Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer , Mircea Dusa , Irwan Dani Setija
发明人： Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer , Mircea Dusa , Irwan Dani Setija
IPC分类号： G06K9/00 , G03F7/00
CPC分类号： G03F1/84 , G03F7/7065
摘要： A method of measuring a property of a substrate includes generating a patterned mask configured to cause a radiation beam passing through the mask to acquire the pattern, simulating radiating the substrate with a patterned radiation beam that has been patterned using the mask to obtain a simulated pattern, determining at least one location of the simulated pattern that is prone to patterning errors, and irradiating the substrate with the patterned radiation beam using a lithographic process. The method also includes measuring an accuracy of at least one property of the at least one location of the pattern on the substrate that has been determined as being prone to patterning errors, and adjusting the lithographic process according to the measuring.
摘要翻译：测量衬底性质的方法包括：生成图案化掩模，其被配置为使通过掩模的辐射束获得图案，模拟使用掩模图案化的图案化辐射束来辐射衬底以获得模拟图案，确定易于图案化错误的模拟图案的至少一个位置，以及使用光刻工艺用图案化的辐射束照射衬底。该方法还包括测量已经被确定为易于图案化错误的衬底上的图案的至少一个位置的至少一个特性的精度，以及根据测量来调整光刻处理。

2. 发明授权

US08189195B2 Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method 有权
标题翻译：检测方法和装置，光刻设备，光刻处理单元和器件制造方法
公开(公告)号：US08189195B2
公开(公告)日：2012-05-29
申请号：US11798039
申请日：2007-05-09
申请人： Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer , Mircea Dusa , Irwan Dani Setija
发明人： Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer , Mircea Dusa , Irwan Dani Setija
IPC分类号： G01B11/00 , G01B11/14 , G01B11/04 , G01N21/00
CPC分类号： G03F1/84 , G03F7/7065
摘要： A method of measuring a property of a substrate includes generating a patterned mask configured to cause a radiation beam passing through the mask to acquire the pattern, simulating radiating the substrate with a patterned radiation beam that has been patterned using the mask to obtain a simulated pattern, determining at least one location of the simulated pattern that is prone to patterning errors, and irradiating the substrate with the patterned radiation beam using a lithographic process. The method also includes measuring an accuracy of at least one property of the at least one location of the pattern on the substrate that has been determined as being prone to patterning errors, and adjusting the lithographic process according to the measuring.
摘要翻译：测量衬底性质的方法包括：生成图案化掩模，其被配置为使通过掩模的辐射束获得图案，模拟使用掩模图案化的图案化辐射束来辐射衬底以获得模拟图案，确定易于图案化错误的模拟图案的至少一个位置，以及使用光刻工艺用图案化的辐射束照射衬底。该方法还包括测量已经被确定为易于图案化错误的衬底上的图案的至少一个位置的至少一个特性的精度，以及根据测量来调整光刻处理。

3. 发明授权

US07916284B2 Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method 有权
标题翻译：检测方法和装置，光刻设备，光刻处理单元和器件制造方法
公开(公告)号：US07916284B2
公开(公告)日：2011-03-29
申请号：US11488170
申请日：2006-07-18
申请人： Mircea Dusa , Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer
发明人： Mircea Dusa , Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer
IPC分类号： G01B9/00 , G01B11/30 , G01B11/14 , G01B11/04 , G03F9/00 , G03C5/00
CPC分类号： G03F7/70683 , G03F7/70516 , G03F7/70616 , G03F7/70625 , G03F7/70641
摘要： In a scatterometric method differential targets with different sensitivities to parameters of interest are printed in a calibration matrix and difference spectra obtained. principal component analysis is applied to the difference spectra to obtain a calibration function that is less sensitive to variations in the underlying structure than a calibration function obtained from spectra obtained from a single target.
摘要翻译：在散射方法中，将具有不同感光度的感光度的差分目标印刷在校准矩阵中并获得差分光谱。将主成分分析应用于差分光谱，以获得对从单个目标获得的光谱获得的校准函数对底层结构的变化较不敏感的校准函数。

4. 发明授权

US07112813B2 Device inspection method and apparatus using an asymmetric marker 有权
标题翻译：装置检查方法和使用不对称标记的装置
公开(公告)号：US07112813B2
公开(公告)日：2006-09-26
申请号：US10665720
申请日：2003-09-22
申请人： Arie Jeffrey Den Boef , Frank Bornebroek , Hugo Augustinus Joseph Cramer , Mircea Dusa , Richard Johannes Franciscus Van Haren , Antoine Gaston Marie Kiers , Justin Lloyd Kreuzer , Maurits Van Der Schaar , Paul Jacques Van Wijnen , Everhardus Cornelis Mos , Pieter Willem Herman De Jager , Hans Van Der Laan , Paul Frank Luehrmann
发明人： Arie Jeffrey Den Boef , Frank Bornebroek , Hugo Augustinus Joseph Cramer , Mircea Dusa , Richard Johannes Franciscus Van Haren , Antoine Gaston Marie Kiers , Justin Lloyd Kreuzer , Maurits Van Der Schaar , Paul Jacques Van Wijnen , Everhardus Cornelis Mos , Pieter Willem Herman De Jager , Hans Van Der Laan , Paul Frank Luehrmann
IPC分类号： G01N21/86
CPC分类号： G03F9/7084 , G03F9/7046 , G03F9/7049 , G03F9/7076 , G03F9/7088 , G03F9/7092
摘要： A method of device inspection, the method comprising providing an asymmetric marker on a device to be inspected, the form of asymmetry of the marker being dependent upon the parameter to be inspected, directing light at the marker, obtaining a first measurement of the position of the marker via detection of diffracted light of a particular wavelength or diffraction angle, obtaining a second measurement of the position of the marker via detection of diffracted light of a different wavelength or diffraction angle, and comparing the first and second measured positions to determine a shift indicative of the degree of asymmetry of the marker.
摘要翻译：一种设备检查方法，所述方法包括在要检查的设备上提供不对称标记，标记的不对称形式取决于待检查的参数，将光引导到标记处，获得第一测量位置通过检测特定波长或衍射角的衍射光，通过检测不同波长或衍射角的衍射光来获得标记的位置的第二测量，并且比较第一和第二测量位置以确定偏移指示标记物的不对称程度。

5. 发明申请

US20080018874A1 Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method 有权
标题翻译：检测方法和装置，光刻设备，光刻处理单元和器件制造方法
公开(公告)号：US20080018874A1
公开(公告)日：2008-01-24
申请号：US11488170
申请日：2006-07-18
申请人： Mircea Dusa , Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer
发明人： Mircea Dusa , Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer
IPC分类号： G03B27/52
CPC分类号： G03F7/70683 , G03F7/70516 , G03F7/70616 , G03F7/70625 , G03F7/70641
摘要： In a scatterometric method differential targets with different sensitivities to parameters of interest are printed in a calibration matrix and difference spectra obtained. principal component analysis is applied to the difference spectra to obtain a calibration function that is less sensitive to variations in the underlying structure than a calibration function obtained from spectra obtained from a single target.
摘要翻译：在散射方法中，将具有不同感光度的感光度的差分目标印刷在校准矩阵中并获得差分光谱。将主成分分析应用于差分光谱，以获得对从单个目标获得的光谱获得的校准函数对底层结构的变化较不敏感的校准函数。

6. 发明授权

US08520212B2 Scatterometry method and measurement system for lithography 有权
标题翻译：散光方法和光刻测量系统
公开(公告)号：US08520212B2
公开(公告)日：2013-08-27
申请号：US13000212
申请日：2009-07-10
申请人： Willem Marie Julia Marcel Coene , Hugo Augustinus Joseph Cramer , Irwan Dani Setija
发明人： Willem Marie Julia Marcel Coene , Hugo Augustinus Joseph Cramer , Irwan Dani Setija
IPC分类号： G01N21/55
CPC分类号： G01N21/55 , G03F7/70625
摘要： Scatterometry method and apparatus are useful in a lithographic apparatus and device manufacturing. A back focal plane diffraction intensity image of a measurement projection system configured to project a radiation beam onto a target portion of a substrate is measured. A beam of radiation having a first wavelength is directed to the substrate. A diffraction image of a zeroth diffraction order and higher order diffraction from a diffraction structure in the substrate is provided. A first layer (4) of the diffractionstructure provides a diffraction image having only a zeroth diffraction order. A second layer (5) has a periodic structure (6a, 6b) configured such that a lowest spatial frequency of the periodic structure is lower than spatial frequencies of interest of the first structure. From the diffraction image originating from diffraction of the radiation beam in both the first and second layer a critical dimension metrology parameter is determined.
摘要翻译：散射测定方法和装置在光刻设备和器件制造中是有用的。测量被配置为将辐射束投影到基板的目标部分上的测量投影系统的后焦平面衍射强度图像。具有第一波长的辐射束被引导到基板。提供了衍射图像的零衍射级和衍射结构的基底中的高阶衍射。衍射结构的第一层（4）提供仅具有零级衍射级的衍射图像。第二层（5）具有周期性结构（6a，6b），其被配置为使得周期性结构的最低空间频率低于第一结构的感兴趣的空间频率。从第一和第二层中的辐射束的衍射衍射图像，确定临界尺寸计量参数。

7. 发明申请

US20110304851A1 Scatterometry Method and Measurement System for Lithography 有权
标题翻译：散光方法和光刻测量系统
公开(公告)号：US20110304851A1
公开(公告)日：2011-12-15
申请号：US13000212
申请日：2009-07-10
申请人： Willem Marie Julia Marcel Coene , Hugo Augustinus Joseph Cramer , Irwan Dani Setija
发明人： Willem Marie Julia Marcel Coene , Hugo Augustinus Joseph Cramer , Irwan Dani Setija
IPC分类号： G01N21/55 , G03F7/20
CPC分类号： G01N21/55 , G03F7/70625
摘要： Scatterometry method and apparatus are useful in a lithographic apparatus and device manufacturing. A back focal plane diffraction intensity image of a measurement projection system configured to project a radiation beam onto a target portion of a substrate is measured. A beam of radiation having a first wavelength is directed to the substrate. A diffraction image of a zeroth diffraction order and higher order diffraction from a diffraction structure in the substrate is provided. A first layer (4) of the diffractionstructure provides a diffraction image having only a zeroth diffraction order. A second layer (5) has a periodic structure (6a, 6b) configured such that a lowest spatial frequency of the periodic structure is lower than spatial frequencies of interest of the first structure. From the diffraction image originating from diffraction of the radiation beam in both the first and second layer a critical dimension metrology parameter is determined.
摘要翻译：散射测定方法和装置在光刻设备和器件制造中是有用的。测量被配置为将辐射束投影到基板的目标部分上的测量投影系统的后焦平面衍射强度图像。具有第一波长的辐射束被引导到基板。提供了衍射图像的零衍射级和衍射结构的基底中的高阶衍射。衍射结构的第一层（4）提供仅具有零级衍射级的衍射图像。第二层（5）具有周期性结构（6a，6b），其被配置为使得周期性结构的最低空间频率低于第一结构的感兴趣的空间频率。从第一和第二层中的辐射束的衍射衍射图像，确定临界尺寸计量参数。

8. 发明授权

US09081303B2 Methods and scatterometers, lithographic systems, and lithographic processing cells 有权
标题翻译：方法和散射仪，光刻系统和光刻处理单元
公开(公告)号：US09081303B2
公开(公告)日：2015-07-14
申请号：US12846652
申请日：2010-07-29
申请人： Hugo Augustinus Joseph Cramer , Arie Jeffrey Den Boef , Henricus Johannes Lambertus Megens , Hendrik Jan Hidde Smilde , Adrianus Johannes Hendrikus Schellekens , Michael Kubis
发明人： Hugo Augustinus Joseph Cramer , Arie Jeffrey Den Boef , Henricus Johannes Lambertus Megens , Hendrik Jan Hidde Smilde , Adrianus Johannes Hendrikus Schellekens , Michael Kubis
IPC分类号： G03F7/20 , G01B11/24 , G01B11/30 , G01N21/47 , G01B11/02 , G01B11/22 , G01N21/88
CPC分类号： G03F7/70641 , G01B11/02 , G01B11/22 , G01B11/24 , G01B11/30 , G01N21/47 , G01N21/88 , G03F7/70608 , G03F7/70625 , G03F7/70633 , G03F7/7065
摘要： In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.
摘要翻译：在确定在基板上的光刻工艺中使用的光刻设备的焦点的方法中，使用光刻工艺在基板上形成结构，该结构具有至少一个特征，该特征在印刷图案中具有不对称性作为光刻设备在基板上的焦点的函数。在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像。第一图像使用非零阶衍射辐射的第一部分形成。在用第二辐射束照射结构的同时形成和检测周期性结构的第二图像。使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。确定测量的第一和第二部分光谱的强度的比率并用于确定周期性结构的轮廓的不对称性和/或提供焦点在基底上的指示。在相同的仪器中，被检测部分的强度变化被确定为整个结构的过程引起的变化的量度。可以从结构的测量中识别并排除具有不期望的工艺变化的结构区域。

9. 发明授权

US08868387B2 Method of optimizing a model, a method of measuring a property, a device manufacturing method, a spectrometer and a lithographic apparatus 有权
标题翻译：优化模型的方法，测量属性的方法，装置制造方法，光谱仪和光刻设备
公开(公告)号：US08868387B2
公开(公告)日：2014-10-21
申请号：US12247371
申请日：2008-10-08
申请人： Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer , Jouke Krist , Willem Jan Grootjans
发明人： Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer , Jouke Krist , Willem Jan Grootjans
IPC分类号： G06F7/50 , G06F17/10 , G06G7/48 , G01J3/00 , G06F17/50 , G01B11/24 , G03F7/20 , G01N21/47 , G01N21/956 , G01N21/25
CPC分类号： G03F7/70625 , G01B11/24 , G01N21/255 , G01N21/47 , G01N21/95607 , G06F17/10 , G06F17/5009
摘要： A set of parameters used in a model of a spectrometer includes free parameters and fixed parameters. A first set of values for the parameters is set and the model is used to generate a first spectrum. A value of one of the fixed parameters is changed and a second spectrum is generated. An inverse of the model of the spectrometer is then applied to the second spectrum to generate a set of values for the parameters, the values being the same as the first set of values except for one or more of the free parameters. If the free parameter has significantly changed the fixed parameter is designated a free parameter.
摘要翻译：在光谱仪模型中使用的一组参数包括自由参数和固定参数。设置参数的第一组值，并使用该模型生成第一个频谱。固定参数中的一个的值被改变并产生第二个频谱。然后将光谱仪的模型的反相应用于第二光谱以生成参数的一组值，该值与除了一个或多个空闲参数之外的第一组值相同。如果自由参数明显改变，则固定参数被指定为空闲参数。

10. 发明授权

US08830447B2 Inspection method for lithography 有权
标题翻译：光刻检验方法
公开(公告)号：US08830447B2
公开(公告)日：2014-09-09
申请号：US13264256
申请日：2010-05-04
申请人： Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen
发明人： Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen
IPC分类号： G03B27/52 , G03F7/20
CPC分类号： G03F7/70641
摘要： A method is used to determine focus of a lithographic apparatus used in a lithographic process on a substrate. The lithographic process is used to form at least two periodic structures on the substrate. Each structure has at least one feature that has an asymmetry between opposing side wall angles that varies as a different function of the focus of the lithographic apparatus on the substrate. A spectrum produced by directing a beam of radiation onto the at least two periodic structures is measured and ratios of the asymmetries are determined. The ratios and a relationship between the focus and the side wall asymmetry for each structure is used to determine the focus of the lithographic apparatus on the substrate.
摘要翻译：使用一种方法来确定在光刻工艺中使用的光刻设备在基板上的焦点。光刻工艺用于在衬底上形成至少两个周期性结构。每个结构具有至少一个特征，其具有相对的侧壁角度之间的不对称性，所述相对侧壁角度随着光刻设备在基底上的焦点的不同功能而变化。测量通过将辐射束引导到至少两个周期性结构上产生的光谱，并且确定不对称性的比率。使用每个结构的焦点和侧壁不对称之间的比率和关系来确定光刻设备在基底上的焦点。

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