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1. 发明授权

US08867020B2 Metrology method and apparatus, and device manufacturing method 有权
标题翻译：计量方法和装置以及装置制造方法
公开(公告)号：US08867020B2
公开(公告)日：2014-10-21
申请号：US13235902
申请日：2011-09-19
申请人： Hendrik Jan Hidde Smilde , Patrick Warnaar
发明人： Hendrik Jan Hidde Smilde , Patrick Warnaar
IPC分类号： G03B27/54 , G03B27/42 , G03F7/20
CPC分类号： G03F9/00 , G03F7/70483 , G03F7/70633
摘要： Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating or other structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The position of an image of the component structure varies between measurements, and a first type of correction is applied to reduce the influence on the measured intensities, caused by differences in the optical path to and from different positions. A plurality of structures may be imaged simultaneously within the field of view of the optical system, and each corrected for its respective position. The measurements may comprise first and second images of the same target under different modes of illumination and/or imaging, for example in a dark field metrology application. A second type of correction may be applied to reduce the influence of asymmetry between the first and second modes of illumination or imaging, for example to permit a more accurate overly measurement in a semiconductor device manufacturing process.
摘要翻译：公开了用于测量由基板上的光刻工艺形成的目标结构的方法。目标内的光栅或其他结构小于测量光学系统的照明点和视场。组件结构的图像的位置在测量之间变化，并且应用第一类型的校正以减少由与来自不同位置的光路的差异引起的对测量的强度的影响。可以在光学系统的视野内同时成像多个结构，并且每个结构被校正为其各自的位置。测量可以包括在不同照明和/或成像模式下的相同目标的第一和第二图像，例如在暗场测量应用中。可以应用第二类型的校正来减少第一和第二照明模式或成像之间的不对称性的影响，例如以允许在半导体器件制造过程中更准确地过度测量。

2. 发明申请

US20120242970A1 Metrology Method and Apparatus, and Device Manufacturing Method 有权
标题翻译：计量方法与装置及装置制造方法
公开(公告)号：US20120242970A1
公开(公告)日：2012-09-27
申请号：US13235902
申请日：2011-09-19
申请人： Hendrik Jan Hidde SMILDE , Patrick WARNAAR
发明人： Hendrik Jan Hidde SMILDE , Patrick WARNAAR
IPC分类号： G03B27/32 , G01N21/95
CPC分类号： G03F9/00 , G03F7/70483 , G03F7/70633
摘要： Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating or other structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The position of an image of the component structure varies between measurements, and a first type of correction is applied to reduce the influence on the measured intensities, caused by differences in the optical path to and from different positions. A plurality of structures may be imaged simultaneously within the field of view of the optical system, and each corrected for its respective position. The measurements may comprise first and second images of the same target under different modes of illumination and/or imaging, for example in a dark field metrology application. A second type of correction may be applied to reduce the influence of asymmetry between the first and second modes of illumination or imaging, for example to permit a more accurate overly measurement in a semiconductor device manufacturing process.
摘要翻译：公开了用于测量由基板上的光刻工艺形成的目标结构的方法。目标内的光栅或其他结构小于测量光学系统的照明点和视场。组件结构的图像的位置在测量之间变化，并且应用第一类型的校正以减少由与来自不同位置的光路的差异引起的对测量的强度的影响。可以在光学系统的视野内同时成像多个结构，并且每个结构被校正为其各自的位置。测量可以包括在不同照明和/或成像模式下的相同目标的第一和第二图像，例如在暗场测量应用中。可以应用第二类型的校正来减少第一和第二照明模式或成像之间的不对称性的影响，例如以允许在半导体器件制造过程中更准确地过度测量。

3. 发明申请

US20110194092A1 Substrate, an Inspection Apparatus, and a Lithographic Apparatus 有权
标题翻译：基板，检查装置和平版印刷装置
公开(公告)号：US20110194092A1
公开(公告)日：2011-08-11
申请号：US13059408
申请日：2009-07-09
申请人： Hendrik Jan Hidde Smilde , Willem Marie Julia Marcel Coene
发明人： Hendrik Jan Hidde Smilde , Willem Marie Julia Marcel Coene
IPC分类号： G03B27/54 , G01J1/42 , G03F7/20 , B32B3/00
CPC分类号： G03F7/70683 , G03F7/70625 , G03F7/70633 , Y10T428/24802
摘要： A target for measuring an overlay error or a critical dimension of a substrate comprises a grating. In one example, lines of the grating are arranged at an angle of about 45° with respect to edges of the target. As a consequence, the diffraction order of the grating reflection has its sub-maxima not aligned along the line on which the other diffraction orders are positioned, and overlap of intensity with other diffraction orders is reduced
摘要翻译：用于测量衬底的重叠误差或临界尺寸的目标包括光栅。在一个示例中，光栅的线相对于目标的边缘以约45°的角度布置。因此，光栅反射的衍射级别具有沿其它衍射级所在的线不对齐的亚极大值，并且强度与其他衍射级的重叠减少

4. 发明授权

US09235141B2 Inspection apparatus and method for measuring a property of a substrate 有权
标题翻译：用于测量基板的性质的检查装置和方法
公开(公告)号：US09235141B2
公开(公告)日：2016-01-12
申请号：US13186895
申请日：2011-07-20
申请人： Maurits Van Der Schaar , Arie Jeffrey Den Boef , Everhardus Cornelis Mos , Andreas Fuchs , Martyn John Coogans , Hendrik Jan Hidde Smilde
发明人： Maurits Van Der Schaar , Arie Jeffrey Den Boef , Everhardus Cornelis Mos , Andreas Fuchs , Martyn John Coogans , Hendrik Jan Hidde Smilde
IPC分类号： G03F7/20 , G01N21/95 , G01N21/956 , G03F9/00 , G01N21/47
CPC分类号： G03F7/70633 , G01B2210/56 , G01N21/4788 , G01N21/9501 , G01N21/95607 , G03F7/70616 , G03F9/70
摘要： An inspection apparatus measures a property of a substrate including a periodic structure. An illumination system provides a beam of radiation with an illumination profile including a plurality of illuminated portions. A radiation projector projects the beam of radiation onto the substrate. A detector detects radiation scattered from the periodic structure and separately detects first order diffracted radiation and at least one higher order of diffracted radiation of each of the illuminated portions. A processor determines the property of the substrate from the detected radiation. The plurality of illuminated portions are arranged such that first order diffracted radiation arising from one or more of the illuminated portions are not overlapped by zeroth order or first order diffracted radiation arising from any other of the illuminated portions. Furthermore, the plurality of illuminated portions are arranged such that first order diffracted radiation arising from the one or more of the illuminated portions are overlapped by at least one of the higher orders of diffracted radiation arising from any other of the illuminated portions.
摘要翻译：检查装置测量包括周期性结构的基板的性质。照明系统提供具有包括多个照明部分的照明轮廓的辐射束。辐射投影仪将辐射束投影到基板上。检测器检测从周期性结构散射的辐射，并分别检测每个照明部分的一级衍射辐射和衍射辐射的至少一个高阶。处理器根据检测到的辐射来确定衬底的性质。多个照明部分被布置成使得从一个或多个被照射部分产生的一级衍射辐射不会被任何其他照明部分产生的零级或一级衍射辐射重叠。此外，多个照明部分被布置成使得由一个或多个被照射部分产生的一阶衍射辐射与从任何其他照明部分产生的衍射辐射的较高阶数中的至少一个重叠。

5. 发明授权

US09229338B2 Substrate, a method of measuring a property, an inspection apparatus and a lithographic apparatus 有权
标题翻译：基板，测量属性的方法，检查装置和光刻设备
公开(公告)号：US09229338B2
公开(公告)日：2016-01-05
申请号：US13059405
申请日：2009-07-27
申请人： Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar , Hendrik Jan Hidde Smilde
发明人： Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar , Hendrik Jan Hidde Smilde
IPC分类号： G01B11/00 , G03B27/32 , G03B27/54 , G03B27/74 , H01L23/28 , G03F7/20 , G03F9/00 , H01L23/544
CPC分类号： G01N21/9501 , G01N21/4738 , G01N2201/06113 , G01N2201/10 , G02B5/1823 , G02B5/1861 , G03F7/70058 , G03F7/70633 , G03F7/70683 , G03F9/70 , G03F9/7046 , G03F9/7076 , H01L23/544 , H01L2924/0002 , Y10T428/24612 , H01L2924/00
摘要： Scatterometry for measuring overlay. A second set of superimposed gratings are superposed over a first set of superimposed gratings. The second set of gratings have a different periodicity from the first set of gratings or a different orientation. Consequently the first order diffraction pattern from the second set of superimposed gratings can be distinguished from the first order diffraction pattern from the first set of superimposed gratings.
摘要翻译：用于测量覆盖层的散射法。第二组叠加的光栅叠加在第一组叠加的光栅上。第二组光栅具有与第一组光栅不同的周期性或不同的取向。因此，来自第二组叠加光栅的一阶衍射图可以与来自第一组叠加光栅的一阶衍射图案区分开。

6. 发明授权

US08709687B2 Substrate and patterning device for use in metrology, metrology method and device manufacturing method 有权
标题翻译：用于计量，计量方法和器件制造方法的基板和图案形成装置
公开(公告)号：US08709687B2
公开(公告)日：2014-04-29
申请号：US13401882
申请日：2012-02-22
申请人： Maurits Van Der Schaar , Patrick Warnaar , Kaustuve Bhattacharyya , Hendrik Jan Hidde Smilde , Michael Kubis
发明人： Maurits Van Der Schaar , Patrick Warnaar , Kaustuve Bhattacharyya , Hendrik Jan Hidde Smilde , Michael Kubis
IPC分类号： G03F9/00
CPC分类号： G03F9/7042 , G03F7/70616 , G03F7/70633 , G03F7/70683 , H01L23/544 , H01L23/58 , H01L2924/0002 , H01L2924/00
摘要： A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.
摘要翻译：来自图案形成装置的图案通过光刻装置施加到基板。应用模式包括产品功能和计量目标。测量目标包括大目标和小目标，用于测量覆盖。一些较小的目标分布在较大目标之间的位置，而其他小目标则放置在与大目标相同的位置。通过比较在相同位置使用小目标和大目标测量的值，可以校正使用所有小目标测量的参数值以获得更高的精度。大型目标主要位于划线范围内，而小目标则分布在产品区域内。

7. 发明授权

US09140998B2 Metrology method and inspection apparatus, lithographic system and device manufacturing method 有权
标题翻译：计量方法和检验仪器，光刻系统和器件制造方法
公开(公告)号：US09140998B2
公开(公告)日：2015-09-22
申请号：US13294057
申请日：2011-11-10
申请人： Hendrik Jan Hidde Smilde , Arno Jan Bleeker , Patrick Warnaar , Willem Marie Julia Marcel Coene , Michael Kubis
发明人： Hendrik Jan Hidde Smilde , Arno Jan Bleeker , Patrick Warnaar , Willem Marie Julia Marcel Coene , Michael Kubis
IPC分类号： G06F17/00 , G06F15/18 , G01N21/55 , G03F7/20
CPC分类号： G03F7/70633 , G03F7/70483 , G03F7/70625 , G03F7/70641 , G06N99/005
摘要： Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.
摘要翻译：公开了用于测量由基板上的光刻工艺形成的目标结构的方法。目标内的光栅结构小于测量光学系统的照明点和视场。光学系统具有通向光瞳平面成像传感器的第一分支和通向基板平面成像传感器的第二分支。空间光调制器被布置在光学系统的第二分支的中间光瞳平面中。 SLM赋予可编程的衰减模式，其可用于校正第一和第二照明模式或成像之间的不对称性。通过使用特定的目标设计和机器学习过程，衰减模式也可以被编程为充当滤波器功能，增强对诸如焦点的特定参数的敏感性。

8. 发明授权

US08411287B2 Metrology method and apparatus, lithographic apparatus, device manufacturing method and substrate 有权
标题翻译：测量方法和设备，光刻设备，器件制造方法和衬底
公开(公告)号：US08411287B2
公开(公告)日：2013-04-02
申请号：US12855394
申请日：2010-08-12
申请人： Hendrik Jan Hidde Smilde , Arno Jan Bleeker , Arie Jeffrey Den Boef , Armand Eugene Albert Koolen , Henricus Petrus Maria Pellemans , Reinder Teun Plug , Willem Marie Julia Marcel Coene
发明人： Hendrik Jan Hidde Smilde , Arno Jan Bleeker , Arie Jeffrey Den Boef , Armand Eugene Albert Koolen , Henricus Petrus Maria Pellemans , Reinder Teun Plug , Willem Marie Julia Marcel Coene
IPC分类号： G01B11/14
CPC分类号： G03F7/70633 , G03F7/70616
摘要： A metrology apparatus is arranged to illuminate a plurality of targets with an off-axis illumination mode. Images of the targets are obtained using only one first order diffracted beam. Where the target is a composite grating, overlay measurements can be obtained from the intensities of the images of the different gratings. Overlay measurements can be corrected for errors caused by variations in the position of the gratings in an image field.
摘要翻译：计量装置被布置成以离轴照明模式照亮多个目标。仅使用一个一阶衍射光束获得目标图像。在目标是复合光栅的地方，可以从不同光栅的图像的强度获得覆盖测量。可以对由图像场中的光栅位置的变化引起的误差来校正叠加测量。

9. 发明授权

US08223347B2 Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method 失效
标题翻译：检测方法和装置，光刻设备，光刻处理单元和器件制造方法
公开(公告)号：US08223347B2
公开(公告)日：2012-07-17
申请号：US12822422
申请日：2010-06-24
申请人： Hendrik Jan Hidde Smilde , Willem Marie Julia Marcel Coene
发明人： Hendrik Jan Hidde Smilde , Willem Marie Julia Marcel Coene
IPC分类号： G01N21/47 , G01B11/00
CPC分类号： G03F7/70633 , G03F7/705 , G03F7/70516
摘要： A method of determining an overlay error between two successive layers produced by a lithographic process on a substrate, including using the lithographic process to form a calibration structure including a periodic structure of the same pitch on each of the layers, such that an overlaid pair of periodic structures is formed, the structures being parallel, but offset relative to each other by an overlay amount. A spectrum produced by directing a beam of radiation onto the calibration structure is measured and compared with one or more modeled spectra so as to determine values of the grating parameters for the calibration structure from the measured spectrum. The lithographic process is used to form further overlaid periodic structures on the same or one or more subsequent substrates, the determined grating parameter values for the calibration structure being used to determine overlay amounts for the further overlaid periodic structures.
摘要翻译：一种确定由光刻工艺在衬底上产生的两个连续层之间的重叠误差的方法，包括使用光刻工艺形成包括在每个层上相同间距的周期性结构的校准结构，使得重叠的一对形成周期性结构，结构是平行的，但是相对于彼此偏移了重叠量。测量通过将辐射束引导到校准结构上产生的光谱，并将其与一个或多个建模光谱进行比较，以便根据测量的光谱确定校准结构的光栅参数的值。光刻工艺用于在相同或一个或多个后续衬底上形成进一步覆盖的周期性结构，所确定的校准结构的光栅参数值用于确定进一步覆盖的周期性结构的重叠量。

10. 发明申请

US20110205518A1 Substrate, a Method of Measuring a Property, an Inspection Apparatus and a Lithographic Apparatus 有权
标题翻译：基板，测量属性的方法，检查装置和平版印刷装置
公开(公告)号：US20110205518A1
公开(公告)日：2011-08-25
申请号：US13059405
申请日：2009-07-27
申请人： Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar , Hendrik Jan Hidde Smilde
发明人： Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar , Hendrik Jan Hidde Smilde
IPC分类号： G03B27/54 , G01B9/02 , B32B3/30
CPC分类号： G01N21/9501 , G01N21/4738 , G01N2201/06113 , G01N2201/10 , G02B5/1823 , G02B5/1861 , G03F7/70058 , G03F7/70633 , G03F7/70683 , G03F9/70 , G03F9/7046 , G03F9/7076 , H01L23/544 , H01L2924/0002 , Y10T428/24612 , H01L2924/00
摘要： Scatterometry for measuring overlay. A second set of superimposed gratings are superposed over a first set of superimposed gratings. The second set of gratings have a different periodicity from the first set of gratings or a different orientation. Consequently the first order diffraction pattern from the second set of superimposed gratings can be distinguished from the first order diffraction pattern from the first set of superimposed gratings.
摘要翻译：用于测量覆盖层的散射法。第二组叠加的光栅叠加在第一组叠加的光栅上。第二组光栅具有与第一组光栅不同的周期性或不同的取向。因此，来自第二组叠加光栅的一阶衍射图可以与来自第一组叠加光栅的一阶衍射图案区分开。

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