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1. 发明授权

US07569941B2 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom 有权
公开(公告)号：US07569941B2
公开(公告)日：2009-08-04
申请号：US11645241
申请日：2006-12-22
申请人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
发明人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
IPC分类号： H01L29/201
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , G02B6/107 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02521 , H01L21/02532 , H01L21/02554 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L24/45 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/12 , H01L29/125 , H01L31/0352 , H01L33/06 , H01L33/18 , H01L33/24 , H01L35/00 , H01L41/094 , H01L41/18 , H01L41/183 , H01L2224/45565 , H01L2224/45599 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01039 , H01L2924/01047 , H01L2924/01051 , H01L2924/01052 , H01L2924/01058 , H01L2924/0106 , H01L2924/01061 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01S5/341 , H01S5/3412 , Y10S977/762 , Y10S977/763 , Y10S977/764 , Y10S977/765 , Y10S977/951 , Y10T428/24994 , Y10T428/249949 , Y10T428/29 , Y10T428/2913 , Y10T428/2916 , Y10T428/292 , Y10T428/2933 , Y10T428/2958 , Y10T428/2973 , Y10T428/298 , H01L2924/00011 , H01L2924/00 , H01L2224/48
摘要： One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

2. 发明授权

US07834264B2 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom 有权
标题翻译：制造纳米结构和纳米线的方法和由其制造的器件
公开(公告)号：US07834264B2
公开(公告)日：2010-11-16
申请号：US11645236
申请日：2006-12-22
申请人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
发明人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
IPC分类号： H01L35/00 , H01L35/02 , H01L35/12
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , G02B6/107 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02521 , H01L21/02532 , H01L21/02554 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L24/45 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/12 , H01L29/125 , H01L31/0352 , H01L33/06 , H01L33/18 , H01L33/24 , H01L35/00 , H01L41/094 , H01L41/18 , H01L41/183 , H01L2224/45565 , H01L2224/45599 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01039 , H01L2924/01047 , H01L2924/01051 , H01L2924/01052 , H01L2924/01058 , H01L2924/0106 , H01L2924/01061 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01S5/341 , H01S5/3412 , Y10S977/762 , Y10S977/763 , Y10S977/764 , Y10S977/765 , Y10S977/951 , Y10T428/24994 , Y10T428/249949 , Y10T428/29 , Y10T428/2913 , Y10T428/2916 , Y10T428/292 , Y10T428/2933 , Y10T428/2958 , Y10T428/2973 , Y10T428/298 , H01L2924/00011 , H01L2924/00 , H01L2224/48
摘要： One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
摘要翻译：具有小于约200nm的均匀直径的一维纳米结构。这些本发明的纳米结构，我们称之为“纳米线”，包括具有不同化学成分的至少两种单晶材料的单晶均匀结构以及异质结构。由于使用单晶材料来形成异质结构，所以得到的异质结构也将是单晶的。纳米线异质结构通常基于半导体线，其中掺杂和组成在纵向或径向方向上或在两个方向上被控制，以产生包括不同材料的导线。所得纳米线异质结构的实例包括纵向异质结构纳米线（LOHN）和同轴异质结构纳米线（COHN）。

3. 发明授权

US06996147B2 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom 有权
公开(公告)号：US06996147B2
公开(公告)日：2006-02-07
申请号：US10112698
申请日：2002-03-29
申请人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
发明人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
IPC分类号： H01S5/00
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , G02B6/107 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02521 , H01L21/02532 , H01L21/02554 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L24/45 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/12 , H01L29/125 , H01L31/0352 , H01L33/06 , H01L33/18 , H01L33/24 , H01L35/00 , H01L41/094 , H01L41/18 , H01L41/183 , H01L2224/45565 , H01L2224/45599 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01039 , H01L2924/01047 , H01L2924/01051 , H01L2924/01052 , H01L2924/01058 , H01L2924/0106 , H01L2924/01061 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01S5/341 , H01S5/3412 , Y10S977/762 , Y10S977/763 , Y10S977/764 , Y10S977/765 , Y10S977/951 , Y10T428/24994 , Y10T428/249949 , Y10T428/29 , Y10T428/2913 , Y10T428/2916 , Y10T428/292 , Y10T428/2933 , Y10T428/2958 , Y10T428/2973 , Y10T428/298 , H01L2924/00011 , H01L2924/00 , H01L2224/48
摘要： One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

4. 发明授权

US09881999B2 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom 有权
公开(公告)号：US09881999B2
公开(公告)日：2018-01-30
申请号：US12488310
申请日：2009-06-19
申请人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
发明人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
IPC分类号： B32B5/02 , B32B9/00 , H01L29/06 , B82Y10/00 , B82Y20/00 , G02B6/10 , H01L21/02 , H01L23/00 , H01L29/12 , H01L31/0352 , H01L33/06 , H01L33/24 , H01L35/00 , H01L41/18 , H01L41/09 , H01L33/18 , H01S5/34
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , G02B6/107 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02521 , H01L21/02532 , H01L21/02554 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L24/45 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/12 , H01L29/125 , H01L31/0352 , H01L33/06 , H01L33/18 , H01L33/24 , H01L35/00 , H01L41/094 , H01L41/18 , H01L41/183 , H01L2224/45565 , H01L2224/45599 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01039 , H01L2924/01047 , H01L2924/01051 , H01L2924/01052 , H01L2924/01058 , H01L2924/0106 , H01L2924/01061 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01S5/341 , H01S5/3412 , Y10S977/762 , Y10S977/763 , Y10S977/764 , Y10S977/765 , Y10S977/951 , Y10T428/24994 , Y10T428/249949 , Y10T428/29 , Y10T428/2913 , Y10T428/2916 , Y10T428/292 , Y10T428/2933 , Y10T428/2958 , Y10T428/2973 , Y10T428/298 , H01L2924/00011 , H01L2924/00 , H01L2224/48
摘要： One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

5. 发明申请

US20100003516A1 METHODS OF FABRICATING NANOSTRUCTURES AND NANOWIRES AND DEVICES FABRICATED THEREFROM 有权
标题翻译：制造纳米结构的方法和纳米结构及其制备的器件
公开(公告)号：US20100003516A1
公开(公告)日：2010-01-07
申请号：US12488310
申请日：2009-06-19
申请人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
发明人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
IPC分类号： B32B5/02 , B32B9/00 , B32B15/00
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , G02B6/107 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02521 , H01L21/02532 , H01L21/02554 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L24/45 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/12 , H01L29/125 , H01L31/0352 , H01L33/06 , H01L33/18 , H01L33/24 , H01L35/00 , H01L41/094 , H01L41/18 , H01L41/183 , H01L2224/45565 , H01L2224/45599 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01039 , H01L2924/01047 , H01L2924/01051 , H01L2924/01052 , H01L2924/01058 , H01L2924/0106 , H01L2924/01061 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01S5/341 , H01S5/3412 , Y10S977/762 , Y10S977/763 , Y10S977/764 , Y10S977/765 , Y10S977/951 , Y10T428/24994 , Y10T428/249949 , Y10T428/29 , Y10T428/2913 , Y10T428/2916 , Y10T428/292 , Y10T428/2933 , Y10T428/2958 , Y10T428/2973 , Y10T428/298 , H01L2924/00011 , H01L2924/00 , H01L2224/48
摘要： One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
摘要翻译：具有小于约200nm的均匀直径的一维纳米结构。这些本发明的纳米结构，我们称之为“纳米线”，包括具有不同化学成分的至少两种单晶材料的单晶均匀结构以及异质结构。由于使用单晶材料来形成异质结构，所以得到的异质结构也将是单晶的。纳米线异质结构通常基于半导体线，其中掺杂和组成在纵向或径向方向上或在两个方向上被控制，以产生包括不同材料的导线。所得纳米线异质结构的实例包括纵向异质结构纳米线（LOHN）和同轴异质结构纳米线（COHN）。

6. 发明授权

US07569847B2 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom 有权
公开(公告)号：US07569847B2
公开(公告)日：2009-08-04
申请号：US11040664
申请日：2005-01-20
申请人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
发明人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
IPC分类号： H01L23/29
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , G02B6/107 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02521 , H01L21/02532 , H01L21/02554 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L24/45 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/12 , H01L29/125 , H01L31/0352 , H01L33/06 , H01L33/18 , H01L33/24 , H01L35/00 , H01L41/094 , H01L41/18 , H01L41/183 , H01L2224/45565 , H01L2224/45599 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01039 , H01L2924/01047 , H01L2924/01051 , H01L2924/01052 , H01L2924/01058 , H01L2924/0106 , H01L2924/01061 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01S5/341 , H01S5/3412 , Y10S977/762 , Y10S977/763 , Y10S977/764 , Y10S977/765 , Y10S977/951 , Y10T428/24994 , Y10T428/249949 , Y10T428/29 , Y10T428/2913 , Y10T428/2916 , Y10T428/292 , Y10T428/2933 , Y10T428/2958 , Y10T428/2973 , Y10T428/298 , H01L2924/00011 , H01L2924/00 , H01L2224/48
摘要： One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

7. 发明授权

US06882051B2 Nanowires, nanostructures and devices fabricated therefrom 有权
标题翻译：纳米线，纳米结构和由其制造的器件
公开(公告)号：US06882051B2
公开(公告)日：2005-04-19
申请号：US10112578
申请日：2002-03-29
申请人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
发明人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
IPC分类号： B82B1/00 , B82B3/00 , G02B6/10 , H01L21/20 , H01L23/49 , H01L29/06 , H01L29/12 , H01L33/06 , H01L33/24 , H01L35/00 , H01L41/09 , H01L41/18 , H01S5/34 , H01L23/48
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , G02B6/107 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02521 , H01L21/02532 , H01L21/02554 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L24/45 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/12 , H01L29/125 , H01L31/0352 , H01L33/06 , H01L33/18 , H01L33/24 , H01L35/00 , H01L41/094 , H01L41/18 , H01L41/183 , H01L2224/45565 , H01L2224/45599 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01039 , H01L2924/01047 , H01L2924/01051 , H01L2924/01052 , H01L2924/01058 , H01L2924/0106 , H01L2924/01061 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01S5/341 , H01S5/3412 , Y10S977/762 , Y10S977/763 , Y10S977/764 , Y10S977/765 , Y10S977/951 , Y10T428/24994 , Y10T428/249949 , Y10T428/29 , Y10T428/2913 , Y10T428/2916 , Y10T428/292 , Y10T428/2933 , Y10T428/2958 , Y10T428/2973 , Y10T428/298 , H01L2924/00011 , H01L2924/00 , H01L2224/48
摘要： One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
摘要翻译：具有小于约200nm的均匀直径的一维纳米结构。这些本发明的纳米结构，我们称之为“纳米线”，包括具有不同化学成分的至少两种单晶材料的单晶均匀结构以及异质结构。由于使用单晶材料来形成异质结构，所以得到的异质结构也将是单晶的。纳米线异质结构通常基于半导体线，其中掺杂和组成在纵向或径向方向上或在两个方向上被控制，以产生包括不同材料的导线。所得纳米线异质结构的实例包括纵向异质结构纳米线（LOHN）和同轴异质结构纳米线（COHN）。

8. 发明授权

US5432151A Process for ion-assisted laser deposition of biaxially textured layer on substrate 失效
标题翻译：双轴织构层离子辅助激光沉积在基片上的工艺
公开(公告)号：US5432151A
公开(公告)日：1995-07-11
申请号：US90422
申请日：1993-07-12
申请人： Richard E. Russo , Ronald P. Reade , Stephen M. Garrison , Paul Berdahl
发明人： Richard E. Russo , Ronald P. Reade , Stephen M. Garrison , Paul Berdahl
IPC分类号： C23C14/02 , C23C14/08 , C23C14/22 , C23C14/28 , H01L39/24 , B05D3/06 , B05D5/12
CPC分类号： C23C14/28 , C23C14/02 , C23C14/087 , H01L39/2448 , Y10S505/732
摘要： A process for depositing a biaxially aligned intermediate layer over a non-single crystal substrate is disclosed which permits the subsequent deposition thereon of a biaxially oriented superconducting film. The process comprises depositing on a substrate by laser ablation a material capable of being biaxially oriented and also capable of inhibiting the migration of substrate materials through the intermediate layer into such a superconducting film, while simultaneously bombarding the substrate with an ion beam. In a preferred embodiment, the deposition is carried out in the same chamber used to subsequently deposit a superconducting film over the intermediate layer. In a further aspect of the invention, the deposition of the superconducting layer over the biaxially oriented intermediate layer is also carried out by laser ablation with optional additional bombardment of the coated substrate with an ion beam during the deposition of the superconducting film.
摘要翻译：公开了一种用于在非单晶衬底上沉积双轴取向的中间层的方法，其允许随后在其上沉积双轴取向超导膜。该方法包括通过激光烧蚀在衬底上沉积能够双轴取向的材料，并且还能够抑制衬底材料通过中间层迁移到这种超导膜中，同时用离子束轰击衬底。在优选实施例中，沉积在用于随后在中间层上沉积超导膜的相同的室中进行。在本发明的另一方面中，超导层在双轴取向中间层上的沉积也通过激光烧蚀进行，在超导膜沉积期间可以用离子束任选附加轰击涂覆的基底。

9. 发明授权

US06821338B2 Particle beam biaxial orientation of a substrate for epitaxial crystal growth 失效
标题翻译：用于外延晶体生长的衬底的粒子束双轴取向
公开(公告)号：US06821338B2
公开(公告)日：2004-11-23
申请号：US09739391
申请日：2000-12-15
申请人： Ronald P. Reade , Paul H. Berdahl , Richard E. Russo
发明人： Ronald P. Reade , Paul H. Berdahl , Richard E. Russo
IPC分类号： C30B106
CPC分类号： H01L39/2461 , C30B23/02 , C30B25/02 , C30B25/18 , C30B33/04
摘要： The invention provides a method of increasing the extent of a desired biaxial orientation of a previously formed non-single-crystal structure by contacting said structure with an oblique particle beam thereby forming in the structure a nucleating surface having increased desired biaxial orientation. The method can further include a step of epitaxially growing the crystalline formation using the nucleating surface to promote the epitaxial growth. The invention also provides a crystalline structure containing a nucleating surface formed by contacting a previously formed non-single-crystal structure with an oblique particle beam, from 0 to 10 adjacent orientation-transmitting layers, and a crystalline active layer. In this structure, the active layer is oriented in registry with the nucleating surface.
摘要翻译：本发明提供了一种通过使所述结构与倾斜粒子束接触而增加预先形成的非单晶结构的所需双轴取向程度的方法，从而在结构中形成具有增加的所需双轴取向的成核面。该方法还可以包括使用成核表面外延生长晶体结构以促进外延生长的步骤。本发明还提供一种晶体结构，其包含通过使预先形成的非单晶结构与倾斜粒子束，0至10个相邻取向透射层和结晶活性层接触而形成的成核表面。在该结构中，活性层与成核面对准。

10. 发明授权

US5019552A Long-laser-pulse method of producing thin films 失效
标题翻译：长激光脉冲生产薄膜的方法
公开(公告)号：US5019552A
公开(公告)日：1991-05-28
申请号：US482131
申请日：1990-02-20
申请人： Mehdi Balooch , Donald K. Olander , Richard E. Russo
发明人： Mehdi Balooch , Donald K. Olander , Richard E. Russo
IPC分类号： C04B41/50 , C04B41/85 , C23C14/08 , C23C14/28 , H01L39/24
CPC分类号： C04B41/009 , C04B41/5074 , C04B41/85 , C23C14/087 , C23C14/28 , H01L39/2448 , Y10S505/73 , Y10S505/732
摘要： A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agenThe invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.
摘要翻译：通过激光蒸发沉积薄膜的方法采用通常在105-106W / cm 2范围内的峰值功率密度的长脉冲激光（大约1毫秒持续时间的Nd玻璃）。该方法可用于生产钙钛矿材料的高Tc超导膜。在一个实施例中，在一个或两个脉冲中，在SrTiO3晶体衬底上产生几百纳米厚的YBa2Cu3O7-x膜。在高温和氧化剂存在下，原位重结晶和后退火有助于提高膜质量。薄膜厚度表现出具有蒸汽发射角的cosθ依赖性，并且薄膜组成与该角度无关。

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