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1. 发明授权

US5882419A Chemical vapor deposition chamber 失效
标题翻译：化学气相沉积室
公开(公告)号：US5882419A
公开(公告)日：1999-03-16
申请号：US939962
申请日：1997-09-29
申请人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl Littau , Alan Morrison , Lawrence Chung-Lai Lei
发明人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl Littau , Alan Morrison , Lawrence Chung-Lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate is supported on a solid receiving plate, and a positioning assembly aligns the substrate to the receiving plate. In some embodiments, the invention may include a stem interconnected to the substrate, a heat limiting member disposed about the stem, and a shroud extending about the stem.
摘要翻译：改进的沉积室将有用的层沉积在基底上。改进的腔室包括衬底边缘保护系统，其与净化气体组合地保护衬底的边缘和下侧的选定部分与沉积气体同时防止在衬底边缘上产生掩蔽区域。基板支撑在固体接收板上，并且定位组件将基板对准接收板。在一些实施例中，本发明可以包括连接到基板的杆，围绕杆设置的限热构件和围绕杆延伸的护罩。

2. 发明授权

US5695568A Chemical vapor deposition chamber 失效
标题翻译：化学气相沉积室
公开(公告)号：US5695568A
公开(公告)日：1997-12-09
申请号：US200862
申请日：1994-02-23
申请人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl Littau , Alan Morrison , Lawrence Chung-Lai Lei
发明人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl Littau , Alan Morrison , Lawrence Chung-Lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate is supported on a solid receiving plate, which is supported by a stem having a heat limiting member and a shroud to protect the stem and a positioning assembly aligns the substrate to the receiving plate.
摘要翻译：改进的沉积室将有用的层沉积在基底上。改进的腔室包括衬底边缘保护系统，其与净化气体组合地保护衬底的边缘和下侧的选定部分与沉积气体同时防止在衬底边缘上产生掩蔽区域。基底支撑在固体接受板上，固体接收板由具有限热构件和护罩的杆支撑，以保护杆，并且定位组件将衬底对准接收板。

3. 发明授权

US5856240A Chemical vapor deposition of a thin film onto a substrate 失效
标题翻译：将薄膜化学气相沉积到基底上
公开(公告)号：US5856240A
公开(公告)日：1999-01-05
申请号：US342522
申请日：1994-11-21
申请人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Lawrence Chung-Lai Lei
发明人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Lawrence Chung-Lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C14/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.
摘要翻译：公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。在加工过程中，真空进料管将基板安装到基座板上。耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。排气泵板改善了来自腔室的废气排出的均匀性。

4. 发明授权

US5935338A Chemical vapor deposition chamber 失效
公开(公告)号：US5935338A
公开(公告)日：1999-08-10
申请号：US606267
申请日：1996-02-23
申请人： Lawrence Chung-Lai Lei , Ilya Perlov , Karl Anthony Littau , Alan Ferris Morrison , Mei Chang , Ashok K. Sinha
发明人： Lawrence Chung-Lai Lei , Ilya Perlov , Karl Anthony Littau , Alan Ferris Morrison , Mei Chang , Ashok K. Sinha
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.

5. 发明授权

US6103014A Chemical vapor deposition chamber 失效
标题翻译：化学气相沉积室
公开(公告)号：US6103014A
公开(公告)日：2000-08-15
申请号：US605809
申请日：1996-02-23
申请人： Lawrence Chung-Lai Lei , Ilya Perlov , Karl Anthony Littau , Alan Ferris Morrison , Mei Chang , Ashok K. Sinha
发明人： Lawrence Chung-Lai Lei , Ilya Perlov , Karl Anthony Littau , Alan Ferris Morrison , Mei Chang , Ashok K. Sinha
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.
摘要翻译：公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。在加工过程中，真空进料管将基板安装到基座板上。耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。排气泵板改善了来自腔室的废气排出的均匀性。

6. 发明授权

US06270621B1 Etch chamber 失效
标题翻译：蚀刻室
公开(公告)号：US06270621B1
公开(公告)日：2001-08-07
申请号：US09593018
申请日：2000-06-13
申请人： Simon W. Tam , Semyon Sherstinsky , Mei Chang , Alan Morrison , Ashok Sinha
发明人： Simon W. Tam , Semyon Sherstinsky , Mei Chang , Alan Morrison , Ashok Sinha
IPC分类号： H01L2100
CPC分类号： H01L21/68721 , H01J2237/022 , H01L21/68785
摘要： A conventional plasma etch chamber is modified to reduce particulate generation in the chamber that contaminates the chamber and substrates mounted on a pedestal support being processed therein. A clamping ring cover in the chamber is made of ceramic. Grooves are machined into the cover and metal antennas can be mounted in the grooves to act as a getter for particles and pre-particle, non-volatile contaminants in the chamber. The clamping ring for the substrate being processed is also made of ceramic. Fewer particles are generated by ion bombardment using ceramic versus prior art clamping rings made of aluminum. Further, the cylinder clamping ring support which surrounds the pedestal support is fitted with a plurality of openings or windows to allow escape of purge gases that carry particles through the windows and into the adjoining exhaust system of the chamber and thus also away from the substrate being processed. Markedly fewer particles are deposited onto substrates using the modified plasma etch chamber of the invention than was found for unmodified chambers.
摘要翻译：修改常规等离子体蚀刻室以减少腔室中的颗粒产生，从而污染安装在其中处理的基座支撑件上的腔室和基底。腔室中的夹紧环盖由陶瓷制成。槽被加工成盖子，并且金属天线可以安装在凹槽中，以用作在室中的颗粒和预颗粒，非挥发性污染物的吸气剂。用于被处理的基板的夹紧环也由陶瓷制成。通过使用陶瓷的离子轰击产生的较少的颗粒与由铝制成的现有技术的夹紧环产生。此外，围绕基座支撑件的气缸夹紧环支撑装配有多个开口或窗口，以允许通过窗口携带颗粒的吹扫气体逸出并进入室的相邻排气系统，并且因此也远离基板处理。使用本发明的改进的等离子体蚀刻室，显着减少颗粒沉积到基板上，而不是未修改的室。

7. 发明授权

US6123864A Etch chamber 失效
标题翻译：蚀刻室
公开(公告)号：US6123864A
公开(公告)日：2000-09-26
申请号：US327126
申请日：1994-10-21
申请人： Simon W. Tam , Semyon Sherstinsky , Mei Chang , Alan Morrison , Ashok Sinha
发明人： Simon W. Tam , Semyon Sherstinsky , Mei Chang , Alan Morrison , Ashok Sinha
IPC分类号： H01L21/687 , H05H1/00
CPC分类号： H01L21/68721 , H01L21/68785 , H01J2237/022
摘要： A conventional plasma etch chamber is modified to reduce particulate generation in the chamber that contaminates the chamber and substrates mounted on a pedestal support being processed therein. A clamping ring cover in the chamber is made of ceramic. Grooves are machined into the cover and metal antennas can be mounted in the grooves to act as a getter for particles and pre-particle, non-volatile contaminants in the chamber. The clamping ring for the substrate being processed is also made of ceramic. Fewer particles are generated by ion bombardment using ceramic versus prior art clamping rings made of aluminum. Further, the cylinder clamping ring support which surrounds the pedestal support is fitted with a plurality of openings or windows to allow escape of purge gases that carry particles through the windows and into the adjoining exhaust system of the chamber and thus also away from the substrate being processed. Markedly fewer particles are deposited onto substrates using the modified plasma etch chamber of the invention than was found for unmodified chambers.
摘要翻译：修改常规等离子体蚀刻室以减少腔室中的颗粒产生，从而污染安装在其中处理的基座支撑件上的腔室和基底。腔室中的夹紧环盖由陶瓷制成。槽被加工成盖子，并且金属天线可以安装在凹槽中，以用作在室中的颗粒和预颗粒，非挥发性污染物的吸气剂。用于被处理的基板的夹紧环也由陶瓷制成。通过使用陶瓷的离子轰击产生的较少的颗粒与由铝制成的现有技术的夹紧环产生。此外，围绕基座支撑件的气缸夹紧环支撑装配有多个开口或窗口，以允许通过窗口携带颗粒的吹扫气体逸出并进入室的相邻排气系统，并且因此也远离基板处理。使用本发明的改进的等离子体蚀刻室，显着减少颗粒沉积到基板上，而不是未修改的室。

8. 发明授权

US6063441A Processing chamber and method for confining plasma 失效
标题翻译：处理室和限制等离子体的方法
公开(公告)号：US6063441A
公开(公告)日：2000-05-16
申请号：US982727
申请日：1997-12-02
申请人： Keith Koai , Lawrence Chung-Lai Lei , Mei Chang , Mark S. Johnson
发明人： Keith Koai , Lawrence Chung-Lai Lei , Mei Chang , Mark S. Johnson
IPC分类号： C23C16/50 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/509 , H01J37/32 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45572 , C23C16/4585 , C23C16/5096 , H01J37/32477 , H01J37/32522 , H01J37/32834 , H01J2237/0206
摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal supporting a wafer and in a pumping channel exhausting the chamber. A peripheral ring placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. The processing chamber includes a chamber lid assembly having an isolator ring member that has a sloping surface for confirming the plasma within a processing zone of the processing chamber while the wafer is being processed therein. A method for forming a CVD layer on a wafer comprising elevating the pedestal until an upper pedestal surface of the pedestal extends above a lower edge of the isolator ring member.
摘要翻译：衬底处理室，特别是用于导电材料的热沉积和随后执行的等离子体工艺的化学气相沉积（CVD）室。本发明减少了导电材料在支撑晶片的基座周边部分和排出腔室的泵送通道中的热沉积。放置在基座上的优选地也用于使晶片居中的外围环与基座热隔离，使得其温度保持基本上低于晶片的温度。处理室包括具有隔离器环构件的腔室盖组件，该隔离器环构件具有倾斜表面，用于在晶片处理期间确认处理室的处理区域内的等离子体。一种用于在晶片上形成CVD层的方法，包括升高基座，直到基座的上基座表面延伸到隔离器环构件的下边缘的上方。

9. 发明授权

US5516367A Chemical vapor deposition chamber with a purge guide 失效
标题翻译：具有清洗导管的化学气相沉积室
公开(公告)号：US5516367A
公开(公告)日：1996-05-14
申请号：US342670
申请日：1994-11-21
申请人： Lawrence C. Lei , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Mei Chang , Ashok K. Sinha
发明人： Lawrence C. Lei , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Mei Chang , Ashok K. Sinha
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.
摘要翻译：公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。在加工过程中，真空进料管将基板安装到基座板上。耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。排气泵板改善了来自腔室的废气排放的均匀性。

10. 发明授权

US5964947A Removable pumping channel liners within a chemical vapor deposition chamber 失效
标题翻译：化学气相沉积室内可拆卸的泵送通道衬管
公开(公告)号：US5964947A
公开(公告)日：1999-10-12
申请号：US857847
申请日：1997-05-16
申请人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
发明人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/509 , C23C16/54 , H01J37/32 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45508 , C23C16/4411 , C23C16/4412 , C23C16/4585 , C23C16/46 , C23C16/5096 , C23C16/54 , H01J37/3244 , H01J37/32477 , H01J37/32834 , H01J2237/2001
摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material in a pumping channel exhausting the chamber. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.
摘要翻译：衬底处理室，特别是用于导电材料的热沉积和随后执行的等离子体工艺的化学气相沉积（CVD）室。本发明减少了在排出室的泵送通道中导电材料的热沉积。泵浦通道衬有各种元件，其中一些元件是电浮动的，并且被设计成使得沉积在这些元件上的导电材料不会有害地影响用于处理晶片的等离子体。

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