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1. 发明申请

US20200381209A1 CHARGE STRIPPING FOR ION IMPLANTATION SYSTEMS 审中-公开
公开(公告)号：US20200381209A1
公开(公告)日：2020-12-03
申请号：US16887446
申请日：2020-05-29
申请人： Axcelis Technologies, Inc.
发明人： Shu Satoh
IPC分类号： H01J37/317 , H01J37/08 , H01J37/32
摘要： An ion implantation system has a source that generates ions from a beam species to form an ion beam, and a mass analyzer mass analyzes the ion beam. An accelerator receives the ion beam having ions at a first charge state and exits the ion beam having ions at a second positive charge state. The accelerator has a charge stripper, a gas source, and a plurality of accelerator stages. The charge stripper converts the ions from the first charge state to the second charge state. The gas source provides a high molecular weight gas, such as hexafluoride, to the charge stripper, and the plurality of accelerator stages respectively accelerate the ions. An end station supports a workpiece to be implanted with ions at the second charge state.

2. 发明授权

US11244800B2 Stepped indirectly heated cathode with improved shielding 有权
公开(公告)号：US11244800B2
公开(公告)日：2022-02-08
申请号：US17330801
申请日：2021-05-26
申请人： Axcelis Technologies, Inc.
发明人： Wilhelm Platow , Neil Bassom , Shu Satoh , Paul Silverstein , Marvin Farley
IPC分类号： H01J1/52 , H01J1/02
摘要： An ion source for forming a plasma has a cathode with a cavity and a cathode surface defining a cathode step. A filament is disposed within the cavity, and a cathode shield has a cathode shield surface at least partially encircling the cathode surface. A cathode gap is defined between the cathode surface and the cathode shield surface, where the cathode gap defines a tortured path for limiting travel of the plasma through the gap. The cathode surface can have a stepped cylindrical surface defined by a first cathode diameter and a second cathode diameter, where the first cathode diameter and second cathode diameter differ from one another to define the cathode step. The stepped cylindrical surface can be an exterior surface or an interior surface. The first and second cathode diameters can be concentric or axially offset.

3. 发明授权

US09711328B2 Method of measuring vertical beam profile in an ion implantation system having a vertical beam angle device 有权
公开(公告)号：US09711328B2
公开(公告)日：2017-07-18
申请号：US14972334
申请日：2015-12-17
申请人： Axcelis Technologies, Inc.
发明人： Shu Satoh
IPC分类号： H01J37/36 , H01J37/30 , H01J37/317 , H01J37/304
CPC分类号： H01J37/3045 , H01J37/304 , H01J37/3171 , H01J2237/244 , H01J2237/24405 , H01J2237/24542
摘要： An ion implantation system measurement system has a scan arm that rotates about an axis and a workpiece support to translate a workpiece through the ion beam. A first measurement component downstream of the scan arm provides a first signal from the ion beam. A second measurement component with a mask is coupled to the scan arm to provide a second signal from the ion beam with the rotation of the scan arm. The mask permits varying amounts of the ion radiation from the ion beam to enter a Faraday cup based on an angular orientation between the mask and the ion beam. A blocking plate selectively blocks the ion beam to the first faraday based on the rotation of the scan arm. A controller determines an angle and vertical size of the ion beam based on the first signal, second signal, and orientation between the mask and ion beam as the second measurement component rotates.

4. 发明授权

US09111719B1 Method for enhancing beam utilization in a scanned beam ion implanter 有权
标题翻译：用于增强扫描束离子注入机中光束利用率的方法
公开(公告)号：US09111719B1
公开(公告)日：2015-08-18
申请号：US14168770
申请日：2014-01-30
申请人： Axcelis Technologies, Inc.
发明人： Shu Satoh
IPC分类号： H01J37/304 , H01J37/30 , H01J37/317
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/24535 , H01J2237/30483
摘要： A dosimetry system and method are provided for increasing utilization of an ion beam, wherein one or more side Faraday cups are positioned along a path of the ion beam and configured to sense a current thereof. The one or more side Faraday cups are separated by a distance associated with a diameter of the workpiece. The ion beam reciprocally scans across the workpiece, interlacing narrow scans and wide scans, wherein narrow scans are defined by reversing direction of the scanning near an edge of the workpiece, and wide scans are defined by reversing direction of the scanning at a position associated with an outboard region of the side Faraday cups. A beam current is sensed by the side Faraday cups concurrent with scanning the beam, wherein the side Faraday cups are connected to a dosimeter only concurrent with a wide scan of the ion beam, and are disconnected concurrent with narrow scans of the ion beam. The side Faraday cups are further connected to ground concurrent with narrow scans of the ion beam.
摘要翻译：提供了一种用于增加离子束利用率的剂量测定系统和方法，其中一个或多个侧法拉第杯沿着离子束的路径定位并被配置为感测其电流。一个或多个侧法拉第杯分开与工件直径相关联的距离。离子束往复扫描穿过工件，交织窄扫描和宽扫描，其中窄扫描是通过在工件边缘附近反转扫描方向来定义的，并且宽扫描是通过在与侧法拉第杯的外侧区域。通过侧法拉第杯同时扫描光束来检测光束电流，其中侧法拉第杯连接到剂量计，仅与离子束的宽扫描并发，并与离子束的窄扫描同时断开。侧法拉第杯进一步连接到地面同时与离子束的窄扫描。

5. 发明授权

US10342114B2 RF resonator for ion beam acceleration 有权
公开(公告)号：US10342114B2
公开(公告)日：2019-07-02
申请号：US16124676
申请日：2018-09-07
申请人： Axcelis Technologies, Inc.
发明人： Shu Satoh
IPC分类号： H05H5/08 , H05H7/18 , C23C14/48 , H01J37/24 , H01J37/317
摘要： An RF feedthrough has an electrically insulative cone that is hollow having first and second openings at first and second ends having first and second diameters. The first diameter is larger than the second diameter, defining a tapered sidewall of the cone to an inflection point. A stem is coupled to the second end of the cone, and passes through the first opening and second opening. A flange is coupled to the first end of the cone and has a flange opening having a third diameter. The third diameter is smaller than the first diameter. The stem passes through the flange opening without contacting the flange. The flange couples the cone to a chamber wall hole. Contact portions of the cone may be metallized. The cone and flange pass the stem through the hole while electrically insulating the stem from the wall of the chamber.

6. 发明授权

US09490185B2 Implant-induced damage control in ion implantation 有权
标题翻译：植入物诱导的离子注入损伤控制
公开(公告)号：US09490185B2
公开(公告)日：2016-11-08
申请号：US14013728
申请日：2013-08-29
申请人： Axcelis Technologies, Inc.
发明人： Ronald N. Reece , Shu Satoh , Serguei Kondratenko , Andy Ray
IPC分类号： H01L21/66 , C23C14/48 , H01J37/304 , H01J37/317
CPC分类号： H01L22/26 , C23C14/48 , H01J37/304 , H01J37/3171 , H01J2237/30455 , H01J2237/30472 , H01J2237/31703 , H01L2924/0002 , H01L2924/00
摘要： An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece.
摘要翻译：提供了离子注入系统，其具有被配置为向工件提供具有束密度的点离子束的离子注入装置，其中工件具有与其相关联的晶体结构。扫描系统沿着一个或多个轴线相对于彼此迭代扫描一个或多个点离子束和工件。还提供控制器并构造成当工件上的预定位置暴露于点离子束时，建立工件的预定局部温度。因此，在预定位置处实现了工件的晶体结构的预定的局部混乱，其中控制器被配置为控制点离子束的束密度中的一个或多个以及与扫描系统相关联的占空比，以建立工件在工件上预定位置的局部温度。

7. 发明申请

US20160189927A1 Method of Measuring Vertical Beam Profile in an Ion Implantation System Having a Vertical Beam Angle Device 有权
标题翻译：在具有垂直光束角度装置的离子植入系统中测量垂直光束轮廓的方法
公开(公告)号：US20160189927A1
公开(公告)日：2016-06-30
申请号：US14972334
申请日：2015-12-17
申请人： Axcelis Technologies, Inc.
发明人： Shu Satoh
IPC分类号： H01J37/304 , H01J37/317
CPC分类号： H01J37/3045 , H01J37/304 , H01J37/3171 , H01J2237/244 , H01J2237/24405 , H01J2237/24542
摘要： An ion implantation system measurement system has a scan arm that rotates about an axis and a workpiece support to translate a workpiece through the ion beam. A first measurement component downstream of the scan arm provides a first signal from the ion beam. A second measurement component with a mask is coupled to the scan arm to provide a second signal from the ion beam with the rotation of the scan arm. The mask permits varying amounts of the ion radiation from the ion beam to enter a Faraday cup based on an angular orientation between the mask and the ion beam. A blocking plate selectively blocks the ion beam to the first faraday based on the rotation of the scan arm. A controller determines an angle and vertical size of the ion beam based on the first signal, second signal, and orientation between the mask and ion beam as the second measurement component rotates.
摘要翻译：离子注入系统测量系统具有围绕轴线旋转的扫描臂和工件支撑件，以使工件平移通过离子束。扫描臂下游的第一测量部件提供来自离子束的第一信号。具有掩模的第二测量部件耦合到扫描臂，以提供来自离子束的第二信号与扫描臂的旋转。掩模允许来自离子束的不同量的离子辐射基于掩模和离子束之间的角度取向进入法拉第杯。阻挡板基于扫描臂的旋转选择性地将离子束阻挡到第一法拉第。当第二测量部件旋转时，控制器基于第一信号，第二信号和掩模和离子束之间的取向来确定离子束的角度和垂直尺寸。

8. 发明授权

US08933424B1 Method for measuring transverse beam intensity distribution 有权
标题翻译：测量横梁强度分布的方法
公开(公告)号：US08933424B1
公开(公告)日：2015-01-13
申请号：US14086578
申请日：2013-11-21
申请人： Axcelis Technologies, Inc.
发明人： Shu Satoh
IPC分类号： H01J37/317 , H01J49/10 , H01L21/265 , H01J37/04
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/24535 , H01J2237/24542 , H01J2237/30472
摘要： An ion implantation system and method are provided where an ion source generates an ion and a mass analyzer mass analyzes the ion beam. A beam profiling apparatus translates through the ion beam along a profiling plane in a predetermined time, wherein the beam profiling apparatus measures the beam current across a width of the ion beam concurrent with the translation, therein defining a time and position dependent beam current profile of the ion beam. A beam monitoring apparatus is configured to measure the ion beam current at an edge of the ion beam over the predetermined time, therein defining a time dependent ion beam current, and a controller determines a time independent ion beam profile by dividing the time and position dependent beam current profile of the ion beam by the time dependent ion beam current, therein by cancelling fluctuations in ion beam current over the predetermined time.
摘要翻译：提供离子注入系统和方法，其中离子源产生离子并且质量分析器质量分析离子束。光束分析装置在预定时间内沿着成像平面翻转离子束，其中光束分布装置测量与平移同时的离子束的宽度上的束电流，其中限定了时间和位置相关的束电流分布离子束。光束监测装置被配置为在预定时间内测量在离子束的边缘处的离子束电流，其中限定了时间依赖的离子束电流，并且控制器通过将时间和位置相关的分配来确定时间独立的离子束分布离子束的束电流分布由时间依赖的离子束电流，其中通过在预定时间内消除离子束电流的波动。

9. 发明申请

US20230139138A1 CHARGE FILTER MAGNET WITH VARIABLE ACHROMATICITY 有权
公开(公告)号：US20230139138A1
公开(公告)日：2023-05-04
申请号：US17514262
申请日：2021-10-29
申请人： Axcelis Technologies, Inc.
发明人： Wilhelm Platow , Shu Satoh , Neil Bassom
IPC分类号： H01J37/317 , H01L21/265 , H01J37/08 , H05H9/00
摘要： An ion implantation system has an ion source to generate an ion beam, and a mass analyzer to define a first ion beam having desired ions at a first charge state. A first linear accelerator accelerates the first ion beam to a plurality of first energies. A charge stripper strips electrons from the desired ions defining a second ion beam at a plurality of second charge states. A first dipole magnet spatially disperses and bends the second ion beam at a first angle. A charge defining aperture passes a desired charge state of the second ion beam while blocking a remainder of the plurality of second charge states. A quadrupole apparatus spatially focuses the second ion beam, defining a third ion beam. A second dipole magnet bends the third ion beam at a second angle. A second linear accelerator accelerates the third ion beam. A final energy magnet bends the third ion beam at a third angle, and wherein an energy defining aperture passes only the desired ions at a desired energy and charge state.

10. 发明申请

US20210398772A1 TUNING APPARATUS FOR MINIMUM DIVERGENCE ION BEAM 有权
公开(公告)号：US20210398772A1
公开(公告)日：2021-12-23
申请号：US17348031
申请日：2021-06-15
申请人： Axcelis Technologies, Inc.
发明人： Shu Satoh , Wilhelm Platow
IPC分类号： H01J37/317 , H01J37/147 , H01J37/09 , H01J37/141 , H01J37/153 , H01J37/21
摘要： An ion implantation system has an ion source configured to form an ion beam. A mass analyzer mass analyzes the ion beam, a scanning element scans the ion beam in a horizontal direction and a parallelizing lens translates the fanned-out scanned beam into parallel shifting scanning ion beam. For applications needing not only a mean incident angle, but highly-aligned ion incident angles and a tight angular distribution, a slit apparatus is positioned at horizontal and/or vertical front focal points of the parallelizing lens. Minimum horizontal and/or vertical angular distributions of the ion beam on the workpiece are attained by controlling a beam focusing lens upstream of the scanning element for the best beam transmission through the slit system.

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