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1. 发明授权

US07902562B2 Light emitting diode device that includes a three dimensional cloud structure and manufacturing method thereof 有权
标题翻译：包括三维云结构的发光二极管装置及其制造方法
公开(公告)号：US07902562B2
公开(公告)日：2011-03-08
申请号：US12222814
申请日：2008-08-18
申请人： Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Jui-Yi Chu , Tsung-Kuang Chen
发明人： Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Jui-Yi Chu , Tsung-Kuang Chen
IPC分类号： H01L33/32
CPC分类号： H01L33/14
摘要： A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.
摘要翻译：提供了一种发光二极管器件（LED）器件及其制造方法，其中LED器件包括衬底，第一n型半导体层，n型三维电子云结构，第二n型半导体层，有源层和p型半导体层。随后，在基板上生长第一n型半导体层，n型三维电子云结构，第二n型半导体层，有源层和p型半导体层。

2. 发明申请

US20090057696A1 Light emitting diode device and manufacturing method therof 有权
标题翻译：发光二极管器件及其制造方法
公开(公告)号：US20090057696A1
公开(公告)日：2009-03-05
申请号：US12222814
申请日：2008-08-18
申请人： Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Jui-Yi Chu , Tsung-Kuang Chen
发明人： Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Jui-Yi Chu , Tsung-Kuang Chen
IPC分类号： H01L33/00
CPC分类号： H01L33/14
摘要： A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.
摘要翻译：提供了一种发光二极管器件（LED）器件及其制造方法，其中LED器件包括衬底，第一n型半导体层，n型三维电子云结构，第二n型半导体层，有源层和p型半导体层。随后，在基板上生长第一n型半导体层，n型三维电子云结构，第二n型半导体层，有源层和p型半导体层。

3. 发明授权

US08729525B2 Opto-electronic device 有权
标题翻译：光电器件
公开(公告)号：US08729525B2
公开(公告)日：2014-05-20
申请号：US12547073
申请日：2009-08-25
申请人： Jui-Yi Chu , Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Hsin-Hsien Wu , Yi-Chieh Lin
发明人： Jui-Yi Chu , Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Hsin-Hsien Wu , Yi-Chieh Lin
IPC分类号： H01L29/06 , H01L33/06
CPC分类号： H01L33/06 , H01L33/325
摘要： The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier thereof to improve the light extraction efficiency of the opto-electronic device.
摘要翻译：本申请涉及一种光电器件。光电器件包括n包层，p包层和多量子阱结构。多量子阱结构位于p包覆层和n包层之间，并且包括多个势垒层，多个阱层和势垒调整层。阻挡层调整层是通过将与p型包层相邻的势垒层与其中的杂质掺杂以改变其能量势垒而制成的，以提高光电器件的光提取效率。

4. 发明申请

US20100046205A1 OPTO-ELECTRONIC DEVICE 有权
标题翻译：光电设备
公开(公告)号：US20100046205A1
公开(公告)日：2010-02-25
申请号：US12547073
申请日：2009-08-25
申请人： Jui-Yi CHU , Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Hsin-Hsien Wu , Yi-Chieh Lin
发明人： Jui-Yi CHU , Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Hsin-Hsien Wu , Yi-Chieh Lin
IPC分类号： G02F1/13357 , H01L29/15
CPC分类号： H01L33/06 , H01L33/325
摘要： The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier thereof to improve the light extraction efficiency of the opto-electronic device.
摘要翻译：本申请涉及一种光电器件。光电器件包括n包层，p包层和多量子阱结构。多量子阱结构位于p包覆层和n包层之间，并且包括多个势垒层，多个阱层和势垒调整层。阻挡层调整层是通过将与p型包层相邻的势垒层与其中的杂质掺杂以改变其能量势垒而制成的，以提高光电器件的光提取效率。

5. 发明授权

US08487317B2 GaN semiconductor device 有权
公开(公告)号：US08487317B2
公开(公告)日：2013-07-16
申请号：US12382955
申请日：2009-03-27
申请人： Yi-Chieh Lin , Cheng-Ta Kuo , Yu-Pin Hsu , Chi-Ming Tsai
发明人： Yi-Chieh Lin , Cheng-Ta Kuo , Yu-Pin Hsu , Chi-Ming Tsai
IPC分类号： H01L33/00 , H01L29/20
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02642 , H01L21/02647 , H01L33/007
摘要： This invention discloses a GaN semiconductor device comprising a substrate; a metal-rich nitride compound thin film on the substrate; a buffer layer formed on the metal-rich nitride compound thin film, and a semiconductor stack layer on the buffer layer wherein the metal-dominated nitride compound thin film covers a partial upper surface of the substrate. Because metal-rich nitride compound is amorphous, the epitaxial growth direction of the buffer layer grows upwards in the beginning and then turns laterally, and the epitaxy defects of the buffer layer also bend with the epitaxial growth direction of the buffer layer. Therefore, the probability of the epitaxial defects extending to the semiconductor stack layer is reduced and the reliability of the GaN semiconductor device is improved.

6. 发明申请

US20090256159A1 GaN semiconductor device 有权
标题翻译： GaN半导体器件
公开(公告)号：US20090256159A1
公开(公告)日：2009-10-15
申请号：US12382955
申请日：2009-03-27
申请人： Yi-Chieh Lin , Cheng-Ta Kuo , Yu-Pin Hsu , Chi-Ming Tsai
发明人： Yi-Chieh Lin , Cheng-Ta Kuo , Yu-Pin Hsu , Chi-Ming Tsai
IPC分类号： H01L33/00 , H01L29/20
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02642 , H01L21/02647 , H01L33/007
摘要： This invention discloses a GaN semiconductor device comprising a substrate; a metal-rich nitride compound thin film on the substrate; a buffer layer formed on the metal-rich nitride compound thin film, and a semiconductor stack layer on the buffer layer wherein the metal-dominated nitride compound thin film covers a partial upper surface of the substrate. Because metal-rich nitride compound is amorphous, the epitaxial growth direction of the buffer layer grows upwards in the beginning and then turns laterally, and the epitaxy defects of the buffer layer also bend with the epitaxial growth direction of the buffer layer. Therefore, the probability of the epitaxial defects extending to the semiconductor stack layer is reduced and the reliability of the GaN semiconductor device is improved.
摘要翻译：本发明公开了一种包括基板的GaN半导体器件; 在基板上形成富金属的氮化物化合物薄膜; 形成在富金属氮化物化合物薄膜上的缓冲层，以及缓冲层上的半导体堆叠层，其中金属主导的氮化物化合物薄膜覆盖基板的部分上表面。因为富金属的氮化物是非晶体，所以缓冲层的外延生长方向在开始时向上生长然后横向变化，并且缓冲层的外延缺陷也随着缓冲层的外延生长方向而弯曲。因此，延伸到半导体堆叠层的外延缺陷的概率降低，并且提高了GaN半导体器件的可靠性。

7. 发明授权

US08278681B2 Light-emitting diode package and wafer-level packaging process of light-emitting diode 有权
标题翻译：发光二极管封装和晶圆级封装工艺的发光二极管
公开(公告)号：US08278681B2
公开(公告)日：2012-10-02
申请号：US12469669
申请日：2009-05-20
申请人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
发明人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L24/26 , H01L24/93 , H01L33/486 , H01L33/62 , H01L33/642 , H01L2924/01005 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/12041 , H01L2924/00
摘要： A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.
摘要翻译：提供了发光二极管的晶片级封装工艺。首先，在生长基板上形成半导体堆叠层。然后在半导体堆叠层上形成多个阻挡图案和多个反射层，其中每个反射层被一个屏障图案包围。然后在半导体堆叠层上形成第一结合层以覆盖阻挡图案和反射层。此后，设置具有多个第二接合层和彼此电绝缘的多个导电插塞的承载基板，并且第一接合层与第二接合层接合。然后将半导体堆叠层与生长衬底分离。接下来，对半导体堆叠层进行图案化以形成多个半导体堆叠图案。接下来，每个半导体堆叠图案电连接到导电插头。

8. 发明申请

US20120164768A1 Light-Emitting Diode Package and Wafer-Level Packaging Process of Light-Emitting Diode 有权
标题翻译：发光二极管的发光二极管封装和晶圆级封装工艺
公开(公告)号：US20120164768A1
公开(公告)日：2012-06-28
申请号：US13403714
申请日：2012-02-23
申请人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
发明人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
IPC分类号： H01L33/60
CPC分类号： H01L33/0079 , H01L24/26 , H01L24/93 , H01L33/486 , H01L33/62 , H01L33/642 , H01L2924/01005 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/12041 , H01L2924/00
摘要： A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.
摘要翻译：提供了发光二极管的晶片级封装工艺。首先，在生长基板上形成半导体堆叠层。然后在半导体堆叠层上形成多个阻挡图案和多个反射层，其中每个反射层被一个屏障图案包围。然后在半导体堆叠层上形成第一结合层以覆盖阻挡图案和反射层。此后，设置具有多个第二接合层和彼此电绝缘的多个导电插塞的承载基板，并且第一接合层与第二接合层接合。然后将半导体堆叠层与生长衬底分离。接下来，对半导体堆叠层进行图案化以形成多个半导体堆叠图案。接下来，每个半导体堆叠图案电连接到导电插头。

9. 发明授权

US07935981B2 Light emitting diode package 有权
标题翻译：发光二极管封装
公开(公告)号：US07935981B2
公开(公告)日：2011-05-03
申请号：US12497703
申请日：2009-07-06
申请人： Yu-Chun Lee , Ya-Hsien Chang , Cheng-Ta Kuo
发明人： Yu-Chun Lee , Ya-Hsien Chang , Cheng-Ta Kuo
IPC分类号： H01L33/00
CPC分类号： H01L33/501 , H01L33/56 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/00014
摘要： A light emitting diode (LED) package includes a carrier, an LED chip, an encapsulant, a plurality of phosphor particles, and a plurality of anti-humidity particles. The LED chip is disposed on and electrically connected to the carrier. The encapsulant encapsulates the LED chip. The phosphor particles and the anti-humidity particles are distributed within the encapsulant. A first light emitted from the LED chip excites the phosphor particles to emit a second light. Some of the anti-humidity particles are adhered onto a surface of the phosphor particles, while the other anti-humidity particles are not adhered onto the surface of the phosphor particles. The anti-humidity particles absorb H2O so as to avoid H2O from being reacted with the phosphor particles. The LED package of the present application has favorable water resistance.
摘要翻译：发光二极管（LED）封装包括载体，LED芯片，密封剂，多个荧光体颗粒和多个抗湿颗粒。 LED芯片设置在载体上并与其电连接。密封剂封装了LED芯片。荧光体颗粒和抗湿颗粒分布在密封剂内。从LED芯片发射的第一个光线使荧光体颗粒发射第二个光。一些抗湿颗粒附着在荧光体颗粒的表面上，而其它的防湿颗粒不附着在荧光体颗粒的表面上。抗湿颗粒吸收H2O，以避免H2O与荧光体颗粒反应。本申请的LED封装具有良好的耐水性。

10. 发明申请

US20080303047A1 Light-emitting diode device and manufacturing method therof 审中-公开
标题翻译：发光二极管器件及其制造方法
公开(公告)号：US20080303047A1
公开(公告)日：2008-12-11
申请号：US12153098
申请日：2008-05-14
申请人： Chien-Fu Shen , De-Shan Kuo , Cheng-Ta Kuo
发明人： Chien-Fu Shen , De-Shan Kuo , Cheng-Ta Kuo
IPC分类号： H01L33/00 , H01L21/02
CPC分类号： H01L33/46 , H01L33/22
摘要： A light-emitting diode (LED) device and manufacturing methods thereof are disclosed, wherein the LED device comprises a substrate, a plurality of micro-lens, a reflector, a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a first electrode and a second electrode. The substrate has a plurality of micro-lens on its upper surface. The first conductivity type semiconductor layer is on the upper surface of the substrate. The active layer and the second conductivity type semiconductor layer are sequentially on a portion of the first conductivity type semiconductor layer. The first electrode is on the other portion of the first conductivity type semiconductor layer uncovered by the active layer. The second electrode is on the second conductivity type semiconductor layer. The reflector layer is on a lower surface of the substrate.
摘要翻译：公开了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，多个微透镜，反射器，第一导电类型半导体层，有源层，第二导电类型半导体层，第一电极和第二电极。基板在其上表面上具有多个微透镜。第一导电型半导体层位于基板的上表面上。有源层和第二导电类型半导体层依次位于第一导电类型半导体层的一部分上。第一电极位于由有源层未覆盖的第一导电类型半导体层的另一部分上。第二电极在第二导电类型半导体层上。反射层位于基板的下表面上。

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