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1. 发明授权

US09054231B2 Method of fabricating semiconductor device using gang bonding and semiconductor device fabricated by the same 有权
标题翻译：使用组合半导体器件制造的半导体器件的制造方法
公开(公告)号：US09054231B2
公开(公告)日：2015-06-09
申请号：US13992941
申请日：2011-06-30
申请人： Chung Hoon Lee , Dae Sung Kal , Ki Bum Nam
发明人： Chung Hoon Lee , Dae Sung Kal , Ki Bum Nam
IPC分类号： H01L21/00 , H01L33/00 , H01L33/50 , H01L23/00 , H01L33/48
CPC分类号： H01L33/507 , H01L23/49805 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/33 , H01L24/83 , H01L24/94 , H01L33/005 , H01L33/0079 , H01L33/0095 , H01L33/36 , H01L33/44 , H01L33/486 , H01L33/50 , H01L2224/04026 , H01L2224/05073 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05171 , H01L2224/05553 , H01L2224/05571 , H01L2224/06151 , H01L2224/11462 , H01L2224/16013 , H01L2224/16057 , H01L2224/16151 , H01L2224/27462 , H01L2224/32238 , H01L2224/325 , H01L2224/33151 , H01L2224/81893 , H01L2224/83447 , H01L2224/83455 , H01L2224/83893 , H01L2224/94 , H01L2224/97 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01L2933/0033 , H01L2924/00012 , H01L2924/00014 , H01L2224/81 , H01L2924/00
摘要： A method of fabricating a semiconductor device using gang bonding and a semiconductor device fabricated by the same, the method comprising preparing a support substrate having a plurality of semiconductor stack structures aligned on a top thereof. Each of the semiconductor stack structures comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an active region interposed between the first and second conductive semiconductor layers. A member having first lead electrodes and second lead electrodes is prepared to correspond to the plurality of semiconductor stack structures. Then, the semiconductor stack structures are bonded to the member while maintaining the semiconductor stack structures on the support substrate. After the semiconductor stack structures are bonded to the member, the member is divided.
摘要翻译：一种制造使用组合键的半导体器件的方法和由其制造的半导体器件，该方法包括制备具有在其顶部上排列的多个半导体叠层结构的支撑衬底。每个半导体堆叠结构包括第一导电半导体层，第二导电半导体层和介于第一和第二导电半导体层之间的有源区。准备具有第一引线电极和第二引线电极的部件以对应于多个半导体叠层结构。然后，将半导体堆叠结构保持在支撑基板上，同时保持半导体堆叠结构。在半导体堆叠结构结合到构件之后，构件被分割。

2. 发明授权

US09711693B2 Method of fabricating semiconductor device using gang bonding and semiconductor device fabricated by the same 有权
公开(公告)号：US09711693B2
公开(公告)日：2017-07-18
申请号：US14731046
申请日：2015-06-04
申请人： Chung Hoon Lee , Dae Sung Kal , Ki Bum Nam
发明人： Chung Hoon Lee , Dae Sung Kal , Ki Bum Nam
IPC分类号： H01L33/50 , H01L23/00 , H01L23/498 , H01L33/36 , H01L33/44 , H01L33/00 , H01L33/48
CPC分类号： H01L33/507 , H01L23/49805 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/33 , H01L24/83 , H01L24/94 , H01L33/005 , H01L33/0079 , H01L33/0095 , H01L33/36 , H01L33/44 , H01L33/486 , H01L33/50 , H01L2224/04026 , H01L2224/05073 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05171 , H01L2224/05553 , H01L2224/05571 , H01L2224/06151 , H01L2224/11462 , H01L2224/16013 , H01L2224/16057 , H01L2224/16151 , H01L2224/27462 , H01L2224/32238 , H01L2224/325 , H01L2224/33151 , H01L2224/81893 , H01L2224/83447 , H01L2224/83455 , H01L2224/83893 , H01L2224/94 , H01L2224/97 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01L2933/0033 , H01L2924/00012 , H01L2924/00014 , H01L2224/81 , H01L2924/00
摘要： A semiconductor device including a first lead electrode and a second lead electrode; a semiconductor stack structure disposed on the member, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a plating layer configured to bond the semiconductor stack structure to the member; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.

3. 发明申请

US20130264600A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING GANG BONDING AND SEMICONDUCTOR DEVICE FABRICATED BY THE SAME 审中-公开
标题翻译：使用由其制成的ANG ING ING AND AND AND OF OF OF OF TING TING TING AME AME AME AME AME AME AME AME AME AME AME AME AME AME
公开(公告)号：US20130264600A1
公开(公告)日：2013-10-10
申请号：US13992941
申请日：2011-06-30
申请人： Chung Hoon Lee , Dae Sung Kal , Ki Bum Nam
发明人： Chung Hoon Lee , Dae Sung Kal , Ki Bum Nam
IPC分类号： H01L33/00 , H01L33/50
CPC分类号： H01L33/507 , H01L23/49805 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/33 , H01L24/83 , H01L24/94 , H01L33/005 , H01L33/0079 , H01L33/0095 , H01L33/36 , H01L33/44 , H01L33/486 , H01L33/50 , H01L2224/04026 , H01L2224/05073 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05171 , H01L2224/05553 , H01L2224/05571 , H01L2224/06151 , H01L2224/11462 , H01L2224/16013 , H01L2224/16057 , H01L2224/16151 , H01L2224/27462 , H01L2224/32238 , H01L2224/325 , H01L2224/33151 , H01L2224/81893 , H01L2224/83447 , H01L2224/83455 , H01L2224/83893 , H01L2224/94 , H01L2224/97 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01L2933/0033 , H01L2924/00012 , H01L2924/00014 , H01L2224/81 , H01L2924/00
摘要： A method of fabricating a semiconductor device using gang bonding and a semiconductor device fabricated by the same, the method comprising preparing a support substrate having a plurality of semiconductor stack structures aligned on a top thereof. Each of the semiconductor stack structures comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an active region interposed between the first and second conductive semiconductor layers. A member having first lead electrodes and second lead electrodes is prepared to correspond to the plurality of semiconductor stack structures. Then, the semiconductor stack structures are bonded to the member while maintaining the semiconductor stack structures on the support substrate. After the semiconductor stack structures are bonded to the member, the member is divided.
摘要翻译：一种制造使用组合键的半导体器件的方法和由其制造的半导体器件，该方法包括制备具有在其顶部上排列的多个半导体叠层结构的支撑衬底。每个半导体堆叠结构包括第一导电半导体层，第二导电半导体层和介于第一和第二导电半导体层之间的有源区。准备具有第一引线电极和第二引线电极的部件以对应于多个半导体叠层结构。然后，将半导体堆叠结构保持在支撑基板上，同时保持半导体堆叠结构。在半导体堆叠结构结合到构件之后，构件被分割。

4. 发明授权

US07667225B1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07667225B1
公开(公告)日：2010-02-23
申请号：US12541749
申请日：2009-08-14
申请人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Ki Bum Nam
发明人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Ki Bum Nam
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/1053 , H01S5/341 , H01S5/3412
摘要： A light emitting device can be used for light emitting diodes and laser diodes. The light emitting device includes a substrate, a first semiconductor layer on the substrate, a second semiconductor layer on the first semiconductor layer, and a multi-quantum well structure including at least one well layer and at least one barrier layer between the first and second semiconductor layers. A carrier trap portion is formed in at least one layer within the multi-quantum well structure. The carrier trap portion has a band-gap energy that gradually decreases from a periphery of the carrier trap portion to a center thereof.
摘要翻译：发光器件可用于发光二极管和激光二极管。发光器件包括衬底，衬底上的第一半导体层，第一半导体层上的第二半导体层，以及多量子阱结构，其包括至少一个阱层和在第一和第二阱之间的至少一个势垒层半导体层。载流子捕获部分形成在多量子阱结构内的至少一层中。载流子捕获部分具有从载流子捕获部分的周边逐渐减小到其中心的带隙能量。

5. 发明授权

US08575594B2 Light emitting diode having a barrier layer with a superlattice structure 有权
标题翻译：具有超晶格结构的阻挡层的发光二极管
公开(公告)号：US08575594B2
公开(公告)日：2013-11-05
申请号：US13406313
申请日：2012-02-27
申请人： Chung Hoon Lee , Ki Bum Nam , Dae Sung Kal
发明人： Chung Hoon Lee , Ki Bum Nam , Dae Sung Kal
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , H01L33/06 , H01L33/16
摘要： A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure.
摘要翻译：用于最小化有源区中的晶体缺陷并提高有源区中的电子和空穴的复合效率的发光二极管（LED）包括在非极性衬底上生长的非极性GaN基半导体层。半导体层包括非极性N型半导体层，非极性P型半导体层和位于N型半导体层和P型半导体层之间的非极性有源区。非极性有源区层包括阱层和具有超晶格结构的势垒层。

6. 发明授权

US08154008B2 Light emitting diode with improved structure 有权
标题翻译：具有改进结构的发光二极管
公开(公告)号：US08154008B2
公开(公告)日：2012-04-10
申请号：US12178758
申请日：2008-07-24
申请人： Chung Hoon Lee , Ki Bum Nam , Dae Sung Kal
发明人： Chung Hoon Lee , Ki Bum Nam , Dae Sung Kal
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , H01L33/06 , H01L33/16
摘要： A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure.
摘要翻译：用于最小化有源区中的晶体缺陷并提高有源区中的电子和空穴的复合效率的发光二极管（LED）包括在非极性衬底上生长的非极性GaN基半导体层。半导体层包括非极性N型半导体层，非极性P型半导体层和位于N型半导体层和P型半导体层之间的非极性有源区。非极性有源区层包括阱层和具有超晶格结构的势垒层。

7. 发明授权

US07772588B1 Light emitting device with improved internal quantum efficiency 有权
标题翻译：具有提高的内部量子效率的发光器件
公开(公告)号：US07772588B1
公开(公告)日：2010-08-10
申请号：US12616610
申请日：2009-11-11
申请人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Ki Bum Nam
发明人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Ki Bum Nam
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/1053 , H01S5/341 , H01S5/3412
摘要： A light emitting device can be used for light emitting diodes and laser diodes. The light emitting device includes a substrate, a first semiconductor layer on the substrate, a second semiconductor layer on the first semiconductor layer, and a multi-quantum well structure including at least one well layer and at least one barrier layer between the first and second semiconductor layers. A carrier trap portion is formed in at least one layer within the multi-quantum well structure. The at least one carrier trap portion is distributed at a higher density than a dislocation density of the layer including the carrier trap portion, and the carrier trap portion has a size of 1˜10 nm.
摘要翻译：发光器件可用于发光二极管和激光二极管。发光器件包括衬底，衬底上的第一半导体层，第一半导体层上的第二半导体层，以及多量子阱结构，其包括至少一个阱层和在第一和第二阱之间的至少一个势垒层半导体层。载流子捕获部分形成在多量子阱结构内的至少一层中。所述至少一个载流子捕获部以比包含所述载流子捕获部的层的位错密度高的密度分布，所述载流子捕获部的尺寸为1〜10nm。

8. 发明授权

US08269228B2 AC light emitting diode 有权
标题翻译：交流发光二极管
公开(公告)号：US08269228B2
公开(公告)日：2012-09-18
申请号：US12178764
申请日：2008-07-24
申请人： Chung Hoon Lee , Ki Bum Nam , Dae Won Kim
发明人： Chung Hoon Lee , Ki Bum Nam , Dae Won Kim
IPC分类号： H01L29/18
CPC分类号： H01L27/156 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L33/16 , H01L33/32 , H01L33/62 , H01L2224/48137
摘要： Disclosed is a light emitting diode (LED) operated by being directly connected to an AC power source. An AC LED according to the present invention comprises a plurality of light emitting cells two-dimensionally arranged on a single substrate; and wires electrically connecting the light emitting cells; wherein the light emitting cells are connected in series by the wires to form a serial array, the single substrate is a non-polar substrate, and the light emitting cells have non-polar GaN-based semiconductor layers grown on the non-polar substrate.
摘要翻译：公开了通过直接连接到AC电源来操作的发光二极管（LED）。根据本发明的交流发光二极管包括二维排列在单个基板上的多个发光单元; 以及电连接所述发光单元的电线; 其中所述发光单元通过所述导线串联连接以形成串联阵列，所述单个衬底是非极性衬底，并且所述发光单元具有在非极性衬底上生长的非极性GaN基半导体层。

9. 发明授权

US09136432B2 High efficiency light emitting diode 有权
标题翻译：高效率发光二极管
公开(公告)号：US09136432B2
公开(公告)日：2015-09-15
申请号：US13997873
申请日：2011-12-06
申请人： Jun Ho Yun , Ki Bum Nam , Joon Hee Lee , Chang Youn Kim , Hong Jae Yoo , Sung Hoon Hong
发明人： Jun Ho Yun , Ki Bum Nam , Joon Hee Lee , Chang Youn Kim , Hong Jae Yoo , Sung Hoon Hong
IPC分类号： H01L33/14 , H01L33/38 , H01L33/40 , H01L33/00 , H01L33/22 , H01L33/44
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/44
摘要： Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7×1018/cm3 and a thickness in the range of 5 to 10 um.
摘要翻译：本文公开了一种高效率发光二极管。发光二极管包括：位于支撑衬底上的半导体堆叠; 反射金属层，位于所述支撑基板和所述半导体堆叠之间，以与所述半导体堆叠的p型化合物半导体层欧姆接触并具有暴露所述半导体叠层的沟槽; 位于所述半导体叠层的n型化合物半导体层上的第一电极焊盘; 电极延伸部，其从所述第一电极焊盘延伸并定位在所述沟槽区域上; 以及介于所述第一电极焊盘和所述半导体堆叠之间的上绝缘层。此外，n型化合物半导体层包括n型接触层，n型接触层的Si掺杂浓度为5〜7×1018 / cm3，厚度为5〜10μm。

10. 发明授权

US08664693B2 Light emitting diode having algan buffer layer and method of fabricating the same 有权
标题翻译：具有阴离子缓冲层的发光二极管及其制造方法
公开(公告)号：US08664693B2
公开(公告)日：2014-03-04
申请号：US12090047
申请日：2007-03-09
申请人： Ki Bum Nam
发明人： Ki Bum Nam
IPC分类号： H01L21/02
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L21/0262 , H01L33/12
摘要： The present invention relates to a light emitting diode having an AlxGa1-xN buffer layer and a method of fabricating the same, and more particularly, to a light emitting diode having an AlxGa1-xN buffer layer, wherein between a substrate and a GaN-based semiconductor layer, the Al x Ga 1-x N (O≦x≦1) buffer layer having the composition ratio x of Al decreasing from the substrate to the GaN-based semiconductor layer is interposed to reduce lattice mismatch between the substrate and the GaN-based semiconductor layer, and a method of fabricating the same. To this end, the present invention provides a light emitting diode comprising a substrate; a first conductive semiconductor layer positioned on the substrate; and an AlxGa1-xN (O≦x≦1) buffer layer interposed between the substrate and the first conductive semiconductor layer and having a composition ratio x of Al decreasing from the substrate to the first conductive semiconductor layer.
摘要翻译：本发明涉及具有Al x Ga 1-x N缓冲层的发光二极管及其制造方法，更具体地说，涉及具有Al x Ga 1-x N缓冲层的发光二极管，其中在基板和GaN基半导体层插入从衬底到GaN基半导体层的组成比x为Al的Al x Ga 1-x N（O @ x 1）缓冲层以减小衬底和GaN之间的晶格失配基半导体层及其制造方法。为此，本发明提供一种包括基板的发光二极管; 位于所述基板上的第一导电半导体层; 以及插入在所述基板和所述第一导电半导体层之间并且从所述基板向所述第一导电半导体层的Al的组成比x减小的Al x Ga 1-x N（O x x 1）缓冲层。

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