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1. 发明授权

US08724271B2 ESD-robust I/O driver circuits 有权
标题翻译： ESD稳健的I / O驱动电路
公开(公告)号：US08724271B2
公开(公告)日：2014-05-13
申请号：US13415178
申请日：2012-03-08
申请人： Da-Wei Lai , Ying-Chang Lin , Mahadeva Iyer Natarajan
发明人： Da-Wei Lai , Ying-Chang Lin , Mahadeva Iyer Natarajan
IPC分类号： H02H3/22
CPC分类号： H02H9/046
摘要： An ESD-robust I/O driver circuit is disclosed. Embodiments include providing a first NMOS transistor having a first source, a first drain, and a first gate; coupling the first source to a ground rail and the first drain to an I/O pad; coupling a gate driver control circuit to the first drain and the first gate; and providing a ground potential to the first gate, via the gate driver control circuit, during an ESD event occurring from the I/O pad to the ground rail.
摘要翻译：公开了一种ESD稳健的I / O驱动器电路。实施例包括提供具有第一源极，第一漏极和第一栅极的第一NMOS晶体管; 将第一源耦合到接地导轨，将第一漏极耦合到I / O焊盘; 将栅极驱动器控制电路耦合到所述第一漏极和所述第一栅极; 以及在从I / O焊盘发生到地轨的ESD事件期间，经由栅极驱动器控制电路向第一栅极提供接地电位。

2. 发明授权

US08767360B2 ESD protection device for circuits with multiple power domains 有权
标题翻译：具有多个电源域的电路的ESD保护装置
公开(公告)号：US08767360B2
公开(公告)日：2014-07-01
申请号：US13482413
申请日：2012-05-29
申请人： Ying-Chang Lin , Da-Wei Lai
发明人： Ying-Chang Lin , Da-Wei Lai
IPC分类号： H02H9/00
CPC分类号： H02H9/046 , H01L2924/0002 , Y10T29/49117 , H01L2924/00
摘要： A ESD protection scheme is disclosed for circuits with multiple power domains. Embodiments include: coupling a first power clamp to a first power rail and a first ground rail of a first domain; coupling a second power clamp to a second power rail and a second ground rail of a second domain; providing a blocking circuit for blocking current from an ESD event; providing an I/O interface connection in the first domain for transmitting signals from the first domain to the blocking circuit; providing a core interface connection in the second domain for transmitting signals from the blocking circuit to the second domain; coupling an input connection of the blocking circuit to the I/O interface connection; and coupling an output connection of the blocking circuit to a core interface connection.
摘要翻译：公开了具有多个电源域的电路的ESD保护方案。实施例包括：将第一电源钳连接到第一电源轨和第一磁畴的第一接地轨; 将第二电力钳耦合到第二电力轨道和第二区域的第二接地轨道; 提供阻塞来自ESD事件的电流的阻塞电路; 在第一域中提供I / O接口连接，用于将信号从第一域传输到阻塞电路; 在第二域中提供核心接口连接，用于将信号从阻塞电路传输到第二域; 将阻塞电路的输入连接耦合到I / O接口连接; 并将阻塞电路的输出连接耦合到核心接口连接。

3. 发明申请

US20130321962A1 ESD-ROBUST I/O DRIVER CIRCUITS 有权
标题翻译： ESD-ROBUST I / O驱动电路
公开(公告)号：US20130321962A1
公开(公告)日：2013-12-05
申请号：US13482423
申请日：2012-05-29
申请人： Da-Wei Lai , Ying-Chang Lin
发明人： Da-Wei Lai , Ying-Chang Lin
IPC分类号： H02H9/04 , H01L21/60
CPC分类号： H01L27/0292 , H01L2924/0002 , H02H9/046 , H01L2924/00
摘要： An ESD-robust I/O driver circuit is disclosed. Embodiments include providing a first NMOS transistor having a first source, a first drain, and a first gate; coupling the first source is coupled to a ground rail, and the first drain to an I/O pad; providing a gate driver control circuit including a second NMOS transistor having a second source, a second drain, and a second gate; and coupling the second drain to the first gate, the second source to the ground rail, wherein the gate driver control circuit provides a ground potential to the first gate during an ESD event occurring from the I/O pad to the ground rail.
摘要翻译：公开了一种ESD稳健的I / O驱动器电路。实施例包括提供具有第一源极，第一漏极和第一栅极的第一NMOS晶体管; 耦合第一源耦合到接地导轨，并且第一漏极耦合到I / O焊盘; 提供包括具有第二源极，第二漏极和第二栅极的第二NMOS晶体管的栅极驱动器控制电路; 以及将所述第二漏极耦合到所述第一栅极，所述第二源极耦合到所述接地导轨，其中所述栅极驱动器控制电路在从所述I / O焊盘发生到所述接地导轨的ESD事件期间向所述第一栅极提供接地电位。

4. 发明申请

US20130321961A1 ESD PROTECTION DEVICE FOR CIRCUITS WITH MULTIPLE POWER DOMAINS 有权
标题翻译：具有多个电源域的电路的ESD保护装置
公开(公告)号：US20130321961A1
公开(公告)日：2013-12-05
申请号：US13482413
申请日：2012-05-29
申请人： Ying-Chang Lin , Da-Wei Lai
发明人： Ying-Chang Lin , Da-Wei Lai
IPC分类号： H02H9/04 , H05K13/00
CPC分类号： H02H9/046 , H01L2924/0002 , Y10T29/49117 , H01L2924/00
摘要： A ESD protection scheme is disclosed for circuits with multiple power domains. Embodiments include: coupling a first power clamp to a first power rail and a first ground rail of a first domain; coupling a second power clamp to a second power rail and a second ground rail of a second domain; providing a blocking circuit for blocking current from an ESD event; providing an I/O interface connection in the first domain for transmitting signals from the first domain to the blocking circuit; providing a core interface connection in the second domain for transmitting signals from the blocking circuit to the second domain; coupling an input connection of the blocking circuit to the I/O interface connection; and coupling an output connection of the blocking circuit to a core interface connection.
摘要翻译：公开了具有多个电源域的电路的ESD保护方案。实施例包括：将第一电源钳连接到第一电源轨和第一磁畴的第一接地轨; 将第二电力钳耦合到第二电力轨道和第二区域的第二接地轨道; 提供阻塞来自ESD事件的电流的阻塞电路; 在第一域中提供I / O接口连接，用于将信号从第一域传输到阻塞电路; 在第二域中提供核心接口连接，用于将信号从阻塞电路传输到第二域; 将阻塞电路的输入连接耦合到I / O接口连接; 并将阻塞电路的输出连接耦合到核心接口连接。

5. 发明授权

US08913359B2 Latch-up free RC-based NMOS ESD power clamp in HV use 有权
标题翻译：高压使用中的无闩锁RC型NMOS ESD功率钳
公开(公告)号：US08913359B2
公开(公告)日：2014-12-16
申请号：US13710700
申请日：2012-12-11
申请人： Da-Wei Lai , Ying-Chang Lin , Handoko Linewih
发明人： Da-Wei Lai , Ying-Chang Lin , Handoko Linewih
IPC分类号： H02H3/22 , H02H9/04
CPC分类号： H02H9/044 , H01L27/0274 , H01L27/0277 , H02H9/046
摘要： An RC-based electrostatic discharge protection device provides an extended snapback trigger voltage range, thereby avoiding latch-up. Two parallel current discharge paths are provided between supply terminals during an electrostatic discharge event by virtue of an added external resistor. The first current discharge path includes body resistance of the protection device and the second current discharge path includes the external resistor.
摘要翻译：基于RC的静电放电保护装置提供扩展的快速恢复触发电压范围，从而避免闩锁。在静电放电事件期间，通过附加的外部电阻器，在电源端子之间提供两个并联电流放电路径。第一电流放电路径包括保护装置的体电阻，第二电流放电路径包括外部电阻器。

6. 发明授权

US08891215B2 High noise immunity with latch-up free ESD clamp 有权
标题翻译：高抗噪声，具有无闩锁的ESD钳位
公开(公告)号：US08891215B2
公开(公告)日：2014-11-18
申请号：US13711141
申请日：2012-12-11
申请人： Da-Wei Lai , Handoko Linewih , Ying-Chang Lin
发明人： Da-Wei Lai , Handoko Linewih , Ying-Chang Lin
IPC分类号： H02H9/00 , H02H9/04 , H01C7/12 , H02H1/00 , H02H1/04 , H02H3/22
CPC分类号： H02H9/04 , H01L27/0274 , H01L27/0285 , H02H9/043 , H02H9/046 , Y10T29/49117
摘要： A triple stack NMOS integrated circuit structure protection circuit for a plurality of terminals operative at respective voltage levels is coupled between the plurality of terminals. First and second NMOS elements of the triple stack NMOS share a common active region. A third NMOS element, vertically positioned with respect to the first and second NMOS elements, has an active region separate from the active region of the first and second NMOS elements. The first, second and third NMOS elements are connected in series between two terminals of the plurality of terminals.
摘要翻译：用于在各个电压电平下工作的多个终端的三重堆叠的NMOS集成电路结构保护电路耦合在多个终端之间。三重堆叠NMOS的第一和第二NMOS元件共享公共有源区。相对于第一和第二NMOS元件垂直定位的第三NMOS元件具有与第一和第二NMOS元件的有源区分离的有源区。第一，第二和第三NMOS元件串联连接在多个端子的两个端子之间。

7. 发明授权

US08848326B2 Cross-domain ESD protection scheme 有权
标题翻译：跨域ESD保护方案
公开(公告)号：US08848326B2
公开(公告)日：2014-09-30
申请号：US13415970
申请日：2012-03-09
申请人： Da-Wei Lai , Ying-Chang Lin
发明人： Da-Wei Lai , Ying-Chang Lin
IPC分类号： H02H9/00
CPC分类号： H03K19/00315 , H01L27/0292 , H01L2924/0002 , H01L2924/00
摘要： A cross-domain ESD protection scheme is disclosed. Embodiments include coupling a first power clamp to a first power rail and a first ground rail; providing a first NMOS transistor having a first source, a first drain, and a first gate; coupling the first source to a second ground rail; providing a first PMOS transistor having a second source, a second drain, and a second gate; coupling the second source to the first power rail; and providing, via the first power clamp, a signal to turn on the first NMOS transistor during an ESD event that occurs at the first power rail.
摘要翻译：公开了跨域ESD保护方案。实施例包括将第一电力钳夹连接到第一电力轨和第一接地轨; 提供具有第一源极，第一漏极和第一栅极的第一NMOS晶体管; 将第一源耦合到第二接地导轨; 提供具有第二源极，第二漏极和第二栅极的第一PMOS晶体管; 将第二源耦合到第一电力轨; 以及经由所述第一功率钳位件在发生在所述第一电力轨道处的ESD事件期间提供用于接通所述第一NMOS晶体管的信号。

8. 发明授权

US08792219B2 ESD-robust I/O driver circuits 有权
标题翻译： ESD稳健的I / O驱动电路
公开(公告)号：US08792219B2
公开(公告)日：2014-07-29
申请号：US13482423
申请日：2012-05-29
申请人： Da-Wei Lai , Ying-Chang Lin
发明人： Da-Wei Lai , Ying-Chang Lin
IPC分类号： H02H3/22
CPC分类号： H01L27/0292 , H01L2924/0002 , H02H9/046 , H01L2924/00
摘要： An ESD-robust I/O driver circuit is disclosed. Embodiments include providing a first NMOS transistor having a first source, a first drain, and a first gate; coupling the first source is coupled to a ground rail, and the first drain to an I/O pad; providing a gate driver control circuit including a second NMOS transistor having a second source, a second drain, and a second gate; and coupling the second drain to the first gate, the second source to the ground rail, wherein the gate driver control circuit provides a ground potential to the first gate during an ESD event occurring from the I/O pad to the ground rail.
摘要翻译：公开了一种ESD稳健的I / O驱动器电路。实施例包括提供具有第一源极，第一漏极和第一栅极的第一NMOS晶体管; 耦合第一源耦合到接地导轨，并且第一漏极耦合到I / O焊盘; 提供包括具有第二源极，第二漏极和第二栅极的第二NMOS晶体管的栅极驱动器控制电路; 以及将所述第二漏极耦合到所述第一栅极，所述第二源极耦合到所述接地导轨，其中所述栅极驱动器控制电路在从所述I / O焊盘发生到所述接地导轨的ESD事件期间向所述第一栅极提供接地电位。

9. 发明授权

US08724272B2 ESD protection device with a tunable holding voltage for a high voltage programming pad 有权
标题翻译： ESD保护器件，具有高压编程焊盘的可调保持电压
公开(公告)号：US08724272B2
公开(公告)日：2014-05-13
申请号：US13454340
申请日：2012-04-24
申请人： Ying-Chang Lin , Da-Wei Lai
发明人： Ying-Chang Lin , Da-Wei Lai
IPC分类号： H02H3/22
CPC分类号： H01L27/0262 , H02H9/04
摘要： An ESD protection device with a tunable holding voltage is disclosed. Embodiments include: providing a silicon-controlled rectifier (SCR) having a first n-type layer with a cathode connection, a first p-type layer with a first control connection, a second n-type layer with a second control connection, and a second p-type layer with an anode connection; coupling the anode connection to a power rail; coupling the cathode connection to a ground rail; providing a tunable holding voltage control unit including a first NMOS having a first gate, a first drain, and a first source, wherein during an ESD event, the first NMOS is turned off and a holding voltage of the SCR is low; coupling the first drain to the first control connection; coupling the first source to the ground rail; and coupling the first gate to a program circuit.
摘要翻译：公开了具有可调保持电压的ESD保护装置。实施例包括：提供具有阴极连接的第一n型层的硅可控整流器（SCR），具有第一控制连接的第一p型层，具有第二控制连接的第二n型层，以及具有阳极连接的第二p型层; 将阳极连接件连接到电源轨; 将阴极连接件连接到地面导轨上; 提供可调保持电压控制单元，其包括具有第一栅极，第一漏极和第一源极的第一NMOS，其中在ESD事件期间，第一NMOS截止，并且SCR的保持电压低; 将所述第一漏极耦合到所述第一控制连接; 将第一源耦合到地面导轨; 以及将所述第一栅极耦合到编程电路。

10. 发明申请

US20130279052A1 ESD PROTECTION DEVICE WITH A TUNABLE HOLDING VOLTAGE FOR A HIGH VOLTAGE PROGRAMMING PAD 有权
标题翻译：具有用于高电压编程焊盘的保持电压的ESD保护装置
公开(公告)号：US20130279052A1
公开(公告)日：2013-10-24
申请号：US13454340
申请日：2012-04-24
申请人： Ying-Chang Lin , Da-Wei Lai
发明人： Ying-Chang Lin , Da-Wei Lai
IPC分类号： H02H9/04 , H05K3/10
CPC分类号： H01L27/0262 , H02H9/04
摘要： An ESD protection device with a tunable holding voltage is disclosed. Embodiments include: providing a silicon-controlled rectifier (SCR) having a first n-type layer with a cathode connection, a first p-type layer with a first control connection, a second n-type layer with a second control connection, and a second p-type layer with an anode connection; coupling the anode connection to a power rail; coupling the cathode connection to a ground rail; providing a tunable holding voltage control unit including a first NMOS having a first gate, a first drain, and a first source, wherein during an ESD event, the first NMOS is turned off and a holding voltage of the SCR is low; coupling the first drain to the first control connection; coupling the first source to the ground rail; and coupling the first gate to a program circuit.
摘要翻译：公开了具有可调保持电压的ESD保护装置。实施例包括：提供具有阴极连接的第一n型层的硅可控整流器（SCR），具有第一控制连接的第一p型层，具有第二控制连接的第二n型层，以及具有阳极连接的第二p型层; 将阳极连接件连接到电源轨; 将阴极连接件连接到地面导轨上; 提供可调保持电压控制单元，其包括具有第一栅极，第一漏极和第一源极的第一NMOS，其中在ESD事件期间，第一NMOS截止，并且SCR的保持电压低; 将所述第一漏极耦合到所述第一控制连接; 将第一源耦合到地面导轨; 以及将所述第一栅极耦合到编程电路。

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