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1. 发明授权

US09422651B2 Methods for arranging nanoscopic elements within networks, fabrics, and films 有权
标题翻译：在网络，织物和薄膜中布置纳米级元件的方法
公开(公告)号：US09422651B2
公开(公告)日：2016-08-23
申请号：US13076152
申请日：2011-03-30
申请人： David A. Roberts , Hao-Yu Lin , Thomas R. Bengtson , Thomas Rueckes , Karl Robinson , H. Montgomery Manning , Rahul Sen , Michel Monteiro
发明人： David A. Roberts , Hao-Yu Lin , Thomas R. Bengtson , Thomas Rueckes , Karl Robinson , H. Montgomery Manning , Rahul Sen , Michel Monteiro
IPC分类号： D04H1/4382 , C01B31/02 , B82Y30/00 , B82Y40/00 , D04H1/4242 , D04H1/4391 , D04H1/74 , D01G19/00
CPC分类号： B05D1/40 , B05D1/005 , B05D1/02 , B05D1/18 , B05D1/28 , B05D1/32 , B82Y30/00 , B82Y40/00 , C01B32/168 , D04H1/4242 , D04H1/4382 , D04H1/4391 , D04H1/74
摘要： A method for arranging nanotube elements within nanotube fabric layers and films is disclosed. A directional force is applied over a nanotube fabric layer to render the fabric layer into an ordered network of nanotube elements. That is, a network of nanotube elements drawn together along their sidewalls and substantially oriented in a uniform direction. In some embodiments this directional force is applied by rolling a cylindrical element over the fabric layer. In other embodiments this directional force is applied by passing a rubbing material over the surface of a nanotube fabric layer. In other embodiments this directional force is applied by running a polishing material over the nanotube fabric layer for a predetermined time. Exemplary rolling, rubbing, and polishing apparatuses are also disclosed.
摘要翻译：公开了一种在纳米管织物层和膜内布置纳米管元件的方法。在纳米管织物层上施加定向力以使织物层成为纳米管元件的有序网络。也就是说，一个纳米管元件的网络沿其侧壁一起拉伸并且基本上沿均匀的方向取向。在一些实施例中，通过将圆柱形元件滚动在织物层上而施加该定向力。在其它实施例中，通过将摩擦材料通过纳米管织物层的表面来施加该定向力。在其他实施例中，通过在纳米管织物层上运行抛光材料预定时间来施加该定向力。还公开了示例性的滚动，摩擦和抛光装置。

2. 发明申请

US20110244121A1 METHODS FOR ARRANGING NANOTUBE ELEMENTS WITHIN NANOTUBE FABRICS AND FILMS 有权
标题翻译：在纳米管织物和薄膜中安装纳米元素的方法
公开(公告)号：US20110244121A1
公开(公告)日：2011-10-06
申请号：US12945501
申请日：2010-11-12
申请人： David A. Roberts , Hao-Yu Lin , Thomas R. Bengtson , Thomas Rueckes , Karl Robinson , H. Montgomery Manning , Rahul Sen , Michel Pires Monteiro
发明人： David A. Roberts , Hao-Yu Lin , Thomas R. Bengtson , Thomas Rueckes , Karl Robinson , H. Montgomery Manning , Rahul Sen , Michel Pires Monteiro
IPC分类号： B05D3/12 , B05D1/40 , B05D3/00 , B05D3/04 , B05D1/32 , B05D1/12 , B05D5/00
CPC分类号： D04H1/4382 , B05D3/007 , B05D3/12 , B82Y30/00 , B82Y40/00 , C01B32/168
摘要： A method for arranging nanotube elements within nanotube fabric layers and films is disclosed. A directional force is applied over a nanotube fabric layer to render the fabric layer into an ordered network of nanotube elements. That is, a network of nanotube elements drawn together along their sidewalls and substantially oriented in a uniform direction. In some embodiments this directional force is applied by rolling a cylindrical element over the fabric layer. In other embodiments this directional force is applied by passing a rubbing material over the surface of a nanotube fabric layer. In other embodiments this directional force is applied by running a polishing material over the nanotube fabric layer for a predetermined time. Exemplary rolling, rubbing, and polishing apparatuses are also disclosed.
摘要翻译：公开了一种在纳米管织物层和膜内布置纳米管元件的方法。在纳米管织物层上施加定向力以使织物层成为纳米管元件的有序网络。也就是说，一个纳米管元件的网络沿其侧壁一起拉伸并且基本上沿均匀的方向取向。在一些实施例中，通过将圆柱形元件滚动在织物层上而施加该定向力。在其它实施例中，通过将摩擦材料通过纳米管织物层的表面来施加该定向力。在其他实施例中，通过在纳米管织物层上运行抛光材料预定时间来施加该定向力。还公开了示例性的滚动，摩擦和抛光装置。

3. 发明授权

US09574290B2 Methods for arranging nanotube elements within nanotube fabrics and films 有权
标题翻译：在纳米管织物和薄膜中排列纳米管元件的方法
公开(公告)号：US09574290B2
公开(公告)日：2017-02-21
申请号：US12945501
申请日：2010-11-12
申请人： David A. Roberts , Hao-Yu Lin , Thomas R. Bengtson , Thomas Rueckes , Karl Robinson , H. Montgomery Manning , Rahul Sen , Michel Pires Monteiro
发明人： David A. Roberts , Hao-Yu Lin , Thomas R. Bengtson , Thomas Rueckes , Karl Robinson , H. Montgomery Manning , Rahul Sen , Michel Pires Monteiro
IPC分类号： B05D3/12 , D04H1/4382 , B05D3/00 , C01B31/02 , B82Y40/00 , B82Y30/00
CPC分类号： D04H1/4382 , B05D3/007 , B05D3/12 , B82Y30/00 , B82Y40/00 , C01B32/168
摘要： A method for arranging nanotube elements within nanotube fabric layers and films is disclosed. A directional force is applied over a nanotube fabric layer to render the fabric layer into an ordered network of nanotube elements. That is, a network of nanotube elements drawn together along their sidewalls and substantially oriented in a uniform direction. In some embodiments this directional force is applied by rolling a cylindrical element over the fabric layer. In other embodiments this directional force is applied by passing a rubbing material over the surface of a nanotube fabric layer. In other embodiments this directional force is applied by running a polishing material over the nanotube fabric layer for a predetermined time. Exemplary rolling, rubbing, and polishing apparatuses are also disclosed.
摘要翻译：公开了一种在纳米管织物层和膜内布置纳米管元件的方法。在纳米管织物层上施加定向力以使织物层成为纳米管元件的有序网络。也就是说，一个纳米管元件的网络沿其侧壁一起拉伸并且基本上沿均匀的方向取向。在一些实施例中，通过将圆柱形元件滚动在织物层上而施加该定向力。在其它实施例中，通过将摩擦材料通过纳米管织物层的表面来施加该定向力。在其他实施例中，通过在纳米管织物层上运行抛光材料预定时间来施加该定向力。还公开了示例性的滚动，摩擦和抛光装置。

4. 发明授权

US08895950B2 Methods for passivating a carbonic nanolayer 有权
标题翻译：钝化碳纳米层的方法
公开(公告)号：US08895950B2
公开(公告)日：2014-11-25
申请号：US14020095
申请日：2013-09-06
申请人： Thomas Rueckes , H. Montgomery Manning , Rahul Sen
发明人： Thomas Rueckes , H. Montgomery Manning , Rahul Sen
IPC分类号： H01L29/04 , H01L47/00 , H01L29/00 , H01L29/16
CPC分类号： H01L51/0048 , B82Y10/00 , B82Y40/00 , H01L21/02203 , H01L21/02527 , H01L21/02606 , H01L21/02628 , H01L29/0665 , H01L29/0669 , H01L29/1029 , H01L29/1606 , H01L45/1233 , H01L45/149 , H01L45/1608 , H01L51/0003 , H01L51/0007 , H01L51/0591 , H01L51/107 , Y10S977/842
摘要： Methods for passivating a carbonic nanolayer (that is, material layers comprised of low dimensional carbon structures with delocalized electrons such as carbon nanotubes and nanoscopic graphene flecks) to prevent or otherwise limit the encroachment of another material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous carbonic nanolayer to fill in the voids within the porous carbonic nanolayer while one or more other material layers are applied over or alongside the carbonic nanolayer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the carbonic nanolayer) is used to form a barrier layer within a carbonic nanolayer. In other embodiments, carbon structures are combined with and nanoscopic particles to limit the porosity of a carbonic nanolayer.
摘要翻译：公开了用于钝化碳纳米层的方法（即，由具有离域电子的低维碳结构（例如碳纳米管和纳米级石墨烯斑点）构成的材料层）以防止或以其他方式限制另一材料层的侵入。在一些实施方案中，将牺牲材料注入多孔碳纳米层内以填充多孔碳纳米层内的空隙，同时将一种或多种其它材料层涂覆在碳纳米层上或旁边。一旦其它材料层就位，则去除牺牲材料。在其它实施方案中，使用非牺牲填料（以不损害碳纳米层的切换功能的方式选择和沉积）在碳纳米层内形成阻挡层。在其它实施方案中，碳结构与纳米级颗粒结合以限制碳纳米层的孔隙率。

5. 发明授权

US08551806B2 Methods for passivating a carbonic nanolayer 有权
标题翻译：钝化碳纳米层的方法
公开(公告)号：US08551806B2
公开(公告)日：2013-10-08
申请号：US12910714
申请日：2010-10-22
申请人： Thomas Rueckes , H. Montgomery Manning , Rahul Sen
发明人： Thomas Rueckes , H. Montgomery Manning , Rahul Sen
IPC分类号： H01L51/40 , H01L21/20
CPC分类号： B82Y30/00 , G11C2213/16 , H01L27/101
摘要： Methods for passivating a carbonic nanolayer (that is, material layers comprised of low dimensional carbon structures with delocalized electrons such as carbon nanotubes and nano-scopic graphene flecks) to prevent or otherwise limit the encroachment of another material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous carbonic nanolayer to fill in the voids within the porous carbonic nanolayer while one or more other material layers are applied over or alongside the carbonic nanolayer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the carbonic nanolayer) is used to form a barrier layer within a carbonic nanolayer. In other embodiments, carbon structures are combined with and nanoscopic particles to limit the porosity of a carbonic nanolayer.
摘要翻译：公开了用于钝化碳纳米层（即，由具有诸如碳纳米管和纳米表面石墨烯斑点的离域电子的低维碳结构构成的材料层）以防止或以其它方式限制另一材料层的侵蚀的方法。在一些实施方案中，将牺牲材料注入多孔碳纳米层内以填充多孔碳纳米层内的空隙，同时将一种或多种其它材料层涂覆在碳纳米层上或旁边。一旦其它材料层就位，则去除牺牲材料。在其它实施方案中，使用非牺牲填料（以不损害碳纳米层的切换功能的方式选择和沉积）在碳纳米层内形成阻挡层。在其它实施方案中，碳结构与纳米级颗粒结合以限制碳纳米层的孔隙率。

6. 发明申请

US20110163290A1 METHODS FOR PASSIVATING A CARBONIC NANOLAYER 有权
标题翻译：用于钝化碳纳米管的方法
公开(公告)号：US20110163290A1
公开(公告)日：2011-07-07
申请号：US12910714
申请日：2010-10-22
申请人： Thomas Rueckes , H. Montgomery Manning , Rahul Sen
发明人： Thomas Rueckes , H. Montgomery Manning , Rahul Sen
IPC分类号： H01L29/06 , H01L21/56 , H01L21/20 , B82Y99/00 , B82Y40/00
CPC分类号： B82Y30/00 , G11C2213/16 , H01L27/101
摘要： Methods for passivating a carbonic nanolayer (that is, material layers comprised of low dimensional carbon structures with delocalized electrons such as carbon nanotubes and nano-scopic graphene flecks) to prevent or otherwise limit the encroachment of another material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous carbonic nanolayer to fill in the voids within the porous carbonic nanolayer while one or more other material layers are applied over or alongside the carbonic nanolayer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the carbonic nanolayer) is used to form a barrier layer within a carbonic nanolayer. In other embodiments, carbon structures are combined with and nanoscopic particles to limit the porosity of a carbonic nanolayer.
摘要翻译：公开了用于钝化碳纳米层（即，由具有诸如碳纳米管和纳米表面石墨烯斑点的离域电子的低维碳结构构成的材料层）以防止或以其它方式限制另一材料层的侵蚀的方法。在一些实施方案中，将牺牲材料注入多孔碳纳米层内以填充多孔碳纳米层内的空隙，同时将一种或多种其它材料层涂覆在碳纳米层上或旁边。一旦其它材料层就位，则去除牺牲材料。在其它实施方案中，使用非牺牲填料（以不损害碳纳米层的切换功能的方式选择和沉积）在碳纳米层内形成阻挡层。在其它实施方案中，碳结构与纳米级颗粒结合以限制碳纳米层的孔隙率。

7. 发明授权

US10654718B2 Scalable nanotube fabrics and methods for making same 有权
公开(公告)号：US10654718B2
公开(公告)日：2020-05-19
申请号：US14033158
申请日：2013-09-20
申请人： Rahul Sen , Billy Smith , J. Thomas Kocab , Ramesh Sivarajan , Peter Sites , Thomas Rueckes , David A. Roberts
发明人： Rahul Sen , Billy Smith , J. Thomas Kocab , Ramesh Sivarajan , Peter Sites , Thomas Rueckes , David A. Roberts
IPC分类号： B82Y30/00 , H01H1/00 , D21H21/52 , D21H15/02 , D21H13/50 , D04H1/732 , D04H1/4242 , H01L23/532 , G11C13/02
摘要： The present disclosure provides scalable nanotube fabrics and methods for controlling or otherwise adjusting the nanotube length distribution of a nanotube application solution in order to realize scalable nanotube fabrics. In one aspect of the present disclosure, one or more filtering operations are used to remove relatively long nanotube elements from a nanotube solution until nanotube length distribution of the nanotube solution conforms to a preselected or desired nanotube length distribution profile. In another aspect of the present disclosure, a sono-chemical cutting process is used to break up relatively long nanotube elements within a nanotube application solution into relatively short nanotube elements to realize a pre-selected or desired nanotube length distribution profile.

8. 发明授权

US08587989B2 NRAM arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same 有权
标题翻译：具有纳米管块的NRAM阵列，纳米管迹线和纳米管平面及其制造方法
公开(公告)号：US08587989B2
公开(公告)日：2013-11-19
申请号：US12486602
申请日：2009-06-17
申请人： H. Montgomery Manning , Thomas Rueckes , Claude L. Bertin , Jonathan W. Ward , Garo Derderian
发明人： H. Montgomery Manning , Thomas Rueckes , Claude L. Bertin , Jonathan W. Ward , Garo Derderian
IPC分类号： G11C13/00
CPC分类号： G11C13/025 , B82Y10/00 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1675
摘要： NRAM arrays with nanotube blocks, traces and planes, and methods of making the same are disclosed. In some embodiments, a nanotube memory array includes a nanotube fabric layer disposed in electrical communication with first and second conductor layers. A memory operation circuit including a circuit for generating and applying a select signal on first and second conductor layers to induce a change in the resistance of the nanotube fabric layer between the first and second conductor layers is provided. At least two adjacent memory cells are formed in at least two selected cross sections of the nanotube fabric and conductor layers such that each memory cell is uniquely addressable and programmable. For each cell, a change in resistance corresponds to a change in an informational state of the memory cell. Some embodiments include bit lines, word lines, and reference lines. In some embodiments, 6F2 memory cell density is achieved.
摘要翻译：公开了具有纳米管块，轨迹和平面的NRAM阵列及其制造方法。在一些实施例中，纳米管存储器阵列包括布置成与第一和第二导体层电连通的纳米管织物层。一种存储器操作电路，包括用于在第一和第二导体层上产生和施加选择信号以引起第一和第二导体层之间的纳米管织物层的电阻变化的电路。至少两个相邻的存储单元形成在纳米管织物和导体层的至少两个选定的横截面中，使得每个存储单元是唯一可寻址和可编程的。对于每个单元，电阻变化对应于存储单元的信息状态的变化。一些实施例包括位线，字线和参考线。在一些实施例中，实现6F2存储单元密度。

9. 发明授权

US08222704B2 Compact electrical switching devices with nanotube elements, and methods of making same 有权
标题翻译：具有纳米管元件的紧凑型电气开关器件及其制造方法
公开(公告)号：US08222704B2
公开(公告)日：2012-07-17
申请号：US12651288
申请日：2009-12-31
申请人： H. Montgomery Manning , Thomas Rueckes , Claude L. Bertin
发明人： H. Montgomery Manning , Thomas Rueckes , Claude L. Bertin
IPC分类号： H01L29/12 , H01L29/41 , H01L29/43 , H01L27/11
CPC分类号： B82Y10/00 , G11C13/025 , H01L27/24 , H01L29/0665 , H01L29/43 , H01L51/0048 , Y10S977/742 , Y10S977/936
摘要： An electrical device includes a substrate; first and second active areas; first and second word lines disposed in a first plane; first and second bit lines in a second plane and in electrical communication with first and second active areas; and a reference line disposed in a third plane. A nanotube element disposed in a fourth plane is in electrical communication with first and second active areas and the reference line via electrical connections at a first surface of the nanotube element. The nanotube element includes first and second regions having resistance states that are independently adjustable in response to electrical stimuli, wherein the first and second regions nonvolatilely retain the resistance states. Arrays of such electrical devices can be formed as nonvolatile memory devices. Methods for fabricating such devices are also disclosed.
摘要翻译：电气装置包括基板; 第一和第二活跃区域; 布置在第一平面中的第一和第二字线; 第一和第二位线在第二平面中并且与第一和第二有效区域电连通; 以及设置在第三平面中的参考线。设置在第四平面中的纳米管元件通过在纳米管元件的第一表面处的电连接与第一和第二有源区域和参考线路电连通。纳米管元件包括具有响应于电刺激可独立调节的电阻状态的第一和第二区域，其中第一和第二区域非常地保持电阻状态。这种电气装置的阵列可以形成为非易失性存储装置。还公开了制造这种装置的方法。

10. 发明申请

US20110156009A1 COMPACT ELECTRICAL SWITCHING DEVICES WITH NANOTUBE ELEMENTS, AND METHODS OF MAKING SAME 有权
标题翻译：具有纳米元件的紧凑型电气开关装置及其制造方法
公开(公告)号：US20110156009A1
公开(公告)日：2011-06-30
申请号：US12651288
申请日：2009-12-31
申请人： H. Montgomery Manning , Thomas Rueckes , Claude L. Bertin
发明人： H. Montgomery Manning , Thomas Rueckes , Claude L. Bertin
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： B82Y10/00 , G11C13/025 , H01L27/24 , H01L29/0665 , H01L29/43 , H01L51/0048 , Y10S977/742 , Y10S977/936
摘要： An electrical device includes a substrate; first and second active areas; first and second word lines disposed in a first plane; first and second bit lines in a second plane and in electrical communication with first and second active areas; and a reference line disposed in a third plane. A nanotube element disposed in a fourth plane is in electrical communication with first and second active areas and the reference line via electrical connections at a first surface of the nanotube element. The nanotube element includes first and second regions having resistance states that are independently adjustable in response to electrical stimuli, wherein the first and second regions nonvolatilely retain the resistance states. Arrays of such electrical devices can be formed as nonvolatile memory devices. Methods for fabricating such devices are also disclosed.
摘要翻译：电气装置包括基板; 第一和第二活跃区域; 布置在第一平面中的第一和第二字线; 第一和第二位线在第二平面中并且与第一和第二有效区域电连通; 以及设置在第三平面中的参考线。设置在第四平面中的纳米管元件通过在纳米管元件的第一表面处的电连接与第一和第二有源区域和参考线路电连通。纳米管元件包括具有响应于电刺激可独立调节的电阻状态的第一和第二区域，其中第一和第二区域非常地保持电阻状态。这种电气装置的阵列可以形成为非易失性存储装置。还公开了制造这种装置的方法。

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