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1. 发明申请

US20140003147A1 Optimized Erase Operation For Non-Volatile Memory With Partially Programmed Block 有权
标题翻译：用于部分编程块的非易失性存储器的优化擦除操作
公开(公告)号：US20140003147A1
公开(公告)日：2014-01-02
申请号：US13537551
申请日：2012-06-29
申请人： Deepanshu Dutta , Ken Oowada , Koichi Nishimura , Yingda Dong
发明人： Deepanshu Dutta , Ken Oowada , Koichi Nishimura , Yingda Dong
IPC分类号： G11C16/16 , G11C16/04
CPC分类号： G11C11/5635 , G11C16/16 , G11C16/344
摘要： In connection with an erase operation of a block of non-volatile storage elements, a determination is made as to whether the block is partially but not fully programmed. A degree of partial programming can be determined by a pre-erase read operation which determines a highest programmed word line, or which determines whether there is a programmed storage element in a subset of word lines above a small subset of source side word lines. Since a partially programmed block will pass an erase-verify test more easily than a fully programmed block, a measure is taken to ensure that the block is sufficiently deeply erased. In one approach, an erase-verify test is made stricter by adjusting a sensing parameter when the block is partially programmed. In another approach, the block can be programmed before being erased. Or, an extra erase pulse which is not followed by an erase-verify test can be applied.
摘要翻译：关于非易失性存储元件块的擦除操作，确定块是部分地还是不完全编程的。部分编程的程度可以通过确定最高编程字线的预擦除读取操作来确定，或者确定在源侧字线的小子集之上的字线子集中是否存在编程存储元件。由于部分编程的块将比完全编程的块更容易通过擦除验证测试，因此采取措施确保块被深度擦除。在一种方法中，通过在块被部分编程时调整感测参数，擦除验证测试变得更严格。在另一种方法中，块可以被擦除之前被编程。或者，可以应用不跟随擦除验证测试的额外擦除脉冲。

2. 发明授权

US08787088B2 Optimized erase operation for non-volatile memory with partially programmed block 有权
标题翻译：具有部分编程块的非易失性存储器的优化擦除操作
公开(公告)号：US08787088B2
公开(公告)日：2014-07-22
申请号：US13537551
申请日：2012-06-29
申请人： Deepanshu Dutta , Ken Oowada , Koichi Nishimura , Yingda Dong
发明人： Deepanshu Dutta , Ken Oowada , Koichi Nishimura , Yingda Dong
IPC分类号： G11C11/34
CPC分类号： G11C11/5635 , G11C16/16 , G11C16/344
摘要： In connection with an erase operation of a block of non-volatile storage elements, a determination is made as to whether the block is partially but not fully programmed. A degree of partial programming can be determined by a pre-erase read operation which determines a highest programmed word line, or which determines whether there is a programmed storage element in a subset of word lines above a small subset of source side word lines. Since a partially programmed block will pass an erase-verify test more easily than a fully programmed block, a measure is taken to ensure that the block is sufficiently deeply erased. In one approach, an erase-verify test is made stricter by adjusting a sensing parameter when the block is partially programmed. In another approach, the block can be programmed before being erased. Or, an extra erase pulse which is not followed by an erase-verify test can be applied.
摘要翻译：关于非易失性存储元件块的擦除操作，确定块是部分地还是不完全编程的。可通过预擦除读取操作来确定部分编程的程度，该擦除读取操作确定最高编程字线，或者确定在源侧字线的小子集之上的字线子集中是否存在编程存储元件。由于部分编程的块将比完全编程的块更容易通过擦除验证测试，因此采取措施确保块被深度擦除。在一种方法中，通过在块被部分编程时调整感测参数，擦除验证测试变得更严格。在另一种方法中，块可以被擦除之前被编程。或者，可以应用不跟随擦除验证测试的额外擦除脉冲。

3. 发明授权

US08213161B2 Solid electrolytic capacitor and method of manufacturing same 失效
标题翻译：固体电解电容器及其制造方法
公开(公告)号：US08213161B2
公开(公告)日：2012-07-03
申请号：US12608381
申请日：2009-10-29
申请人： Koichi Nishimura , Koji Endo , Takashi Umemoto , Hiroshi Nonoue
发明人： Koichi Nishimura , Koji Endo , Takashi Umemoto , Hiroshi Nonoue
IPC分类号： H01G4/228 , H01G9/00 , H01G9/145
CPC分类号： H01G9/012 , H01G9/15 , Y10T29/417
摘要： A solid electrolytic capacitor according to the present invention comprises an anode body, an anode lead in contact with an outer surface of the anode body, a dielectric layer formed on a surface of the anode lead, and a cathode layer formed on a surface of the dielectric layer. The anode lead is provided with a plurality of openings passing through the anode lead. Another solid electrolytic capacitor according to the present invention comprises an anode body, an anode lead in contact with an outer surface of the anode body, a dielectric layer formed on a surface of the anode lead, and a cathode layer formed on a surface of the dielectric layer. The anode lead is provided with a cutout on an outer circumference edge of the anode lead.
摘要翻译：根据本发明的固体电解电容器包括阳极体，与阳极体的外表面接触的阳极引线，形成在阳极引线的表面上的电介质层和形成在阳极引线的表面上的阴极层电介质层。阳极引线设置有穿过阳极引线的多个开口。根据本发明的另一种固体电解电容器包括阳极体，与阳极体的外表面接触的阳极引线，形成在阳极引线的表面上的电介质层和形成在阳极引线的表面上的阴极层电介质层。阳极引线在阳极引线的外周边缘上设有切口。

4. 外观设计

USD629816S1 Traveling machine for construction 有权
标题翻译：旅行机械施工
公开(公告)号：USD629816S1
公开(公告)日：2010-12-28
申请号：US29357140
申请日：2010-03-08
申请人： Koichi Nishimura , Shinji Katsuhara , Koji Yonezawa
设计人： Koichi Nishimura , Shinji Katsuhara , Koji Yonezawa

5. 发明申请

US20100101363A1 DIAL DEVICE 有权
标题翻译：拨号设备
公开(公告)号：US20100101363A1
公开(公告)日：2010-04-29
申请号：US12603895
申请日：2009-10-22
申请人： Masahito Hisada , Koichi Nishimura , Satoshi Ogawa
发明人： Masahito Hisada , Koichi Nishimura , Satoshi Ogawa
IPC分类号： G05G1/10
CPC分类号： G05G1/105 , Y10T74/20492
摘要： A dial device includes a body, a first dial knob supported to the body so as to rotate around a predetermined axis, a second dial knob supported to the body so as to rotate around the predetermined axis, and the second dial knob being provided so as to surround the first dial knob, a gear which rotates in response to a rotation of the second dial knob, and is provided on the body, and a pulley unit which includes a first pulley having a connection portion and a second pulley having a gear portion, the second pulley being arranged coaxially with the first pulley. The connection portion of the first pulley is connected to the first dial knob and the gear portion of the second pulley is meshed with the gear in a state that the pulley unit is attached to the body.
摘要翻译：拨号装置包括主体，支撑在主体上以便围绕预定轴线旋转的第一拨盘旋钮，支撑在主体上以绕预定轴线旋转的第二拨盘旋钮，第二拨盘旋钮设置成围绕所述第一拨轮旋钮，响应于所述第二拨号旋钮的旋转而旋转并设置在所述主体上的齿轮以及包括具有连接部分的第一滑轮和具有齿轮部分的第二滑轮的滑轮单元所述第二滑轮与所述第一滑轮同轴配置。第一滑轮的连接部分连接到第一拨轮旋钮，并且在滑轮单元附接到主体的状态下，第二滑轮的齿轮部分与齿轮啮合。

6. 发明授权

US07637734B2 Stationary platen of injection molding machine 有权
标题翻译：注塑机固定压板
公开(公告)号：US07637734B2
公开(公告)日：2009-12-29
申请号：US12131312
申请日：2008-06-02
申请人： Koichi Nishimura , Masatoshi Senga
发明人： Koichi Nishimura , Masatoshi Senga
IPC分类号： B29C45/17
CPC分类号： B29C45/1744 , B29C45/1747
摘要： A stationary platen of an injection molding machine is composed of a mold mounting plate, a tie-bar connecting member, and a mold clamping force transmission plate. The mold mounting plate is formed of a planar portion for mold fixing and a cylindrical connecting portion that extends from the planar portion and passes through a central through hole of the tie-bar connecting member. The mold clamping force transmission plate connects the cylindrical connecting portion of the mold mounting plate and the tie-bar connecting member with a predetermined gap therebetween lest the connecting member and the mounting plate come into contact and interfere with each other.
摘要翻译：注射成型机的固定压板由模具安装板，连接杆连接部件和合模力传递板构成。模具安装板由用于模具固定的平面部分和从平面部分延伸并穿过连接杆连接构件的中心通孔的圆柱形连接部分形成。合模力传递板将模具安装板的圆筒形连接部分和连接杆连接部件之间的预定间隙连接在一起，以使连接部件和安装板相互接触并相互干涉。

7. 发明授权

US07580303B2 Semiconductor memory having a precharge voltage generation circuit for reducing power consumption 有权
标题翻译：具有用于降低功耗的预充电电压产生电路的半导体存储器
公开(公告)号：US07580303B2
公开(公告)日：2009-08-25
申请号：US11580058
申请日：2006-10-13
申请人： Koichi Nishimura , Shinichiro Ikemasu
发明人： Koichi Nishimura , Shinichiro Ikemasu
IPC分类号： G11C7/00
CPC分类号： G11C11/40626 , G11C7/04 , G11C7/12 , G11C11/406 , G11C11/4094 , G11C2211/4068
摘要： A precharge voltage generating circuit outputs any of a plurality of kinds of precharge voltages in accordance with an ambient temperature. A precharge circuit supplies the precharge voltage to a bit line during the nonaccess of a dynamic memory cell. A sense amplifier amplifies a difference between the voltage of a data signal read from the dynamic memory cell onto the bit line and the supplied precharge voltage. The precharge voltage is altered in accordance with the ambient temperature, whereby the read margin of the sense amplifier can be changed, and the worst value of the data retaining time of the memory cell can be improved. As a result, the frequency of refreshing of the memory cell can be lowered, reducing power consumption and a standby current.
摘要翻译：预充电电压产生电路根据环境温度输出多种预充电电压中的任一种。预充电电路在动态存储单元的未访问期间将预充电电压提供给位线。读出放大器将从动态存储单元读取的数据信号的电压与位线之间的差放大到所提供的预充电电压。根据环境温度改变预充电电压，从而可以改变读出放大器的读取余量，并且可以提高存储单元的数据保持时间的最差值。结果，可以降低存储单元的刷新频率，降低功耗和待机电流。

8. 发明授权

US07483323B2 Semiconductor memory device, and method of controlling the same 有权
公开(公告)号：US07483323B2
公开(公告)日：2009-01-27
申请号：US11515853
申请日：2006-09-06
申请人： Shinya Fujioka , Tomohiro Kawakubo , Koichi Nishimura , Kotoku Sato
发明人： Shinya Fujioka , Tomohiro Kawakubo , Koichi Nishimura , Kotoku Sato
IPC分类号： G11C7/00 , G11C5/14
CPC分类号： G06F1/3234 , G06F1/3203 , G06F1/3268 , G06F1/3275 , G11C5/14 , G11C5/145 , G11C5/147 , G11C11/406 , G11C11/40615 , G11C14/00 , G11C2207/2227 , G11C2211/4067 , H02M3/07 , Y02D10/13 , Y02D10/14 , Y02D50/20
摘要： An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.

9. 发明申请

US20080263961A1 SAFETY DOOR DEVICE OF INJECTION MOLDING MACHINE 有权
标题翻译：注塑机安全门装置
公开(公告)号：US20080263961A1
公开(公告)日：2008-10-30
申请号：US12017036
申请日：2008-01-20
申请人： Koichi Nishimura , Koji Shima
发明人： Koichi Nishimura , Koji Shima
IPC分类号： E05B65/08 , E05B65/00
CPC分类号： B29C45/84 , B22D17/20 , Y10T70/5173
摘要： A safer safety door, provided at low cost and imposing little burden on an operator. A primary safety door with a top and a secondary safety door are provided on a clamping unit. The primary safety door and the secondary safety door abut each other at abutting portions provided on each safety door. The secondary safety door has an engaging member that swings along a guide member. The engaging member has a hinge bent in one direction. When both safety doors are closed, the primary safety door can be freely opened and closed independently. When the secondary safety door is opened, both safety doors are linked together and move as a single body. In the state where the primary and secondary safety doors are opened separately, when the primary safety door is moved to be closed, the hinge member bends and both safety doors are linked together as a unit.
摘要翻译：一个更安全的安全门，以低成本提供，并且对操作员施加很小的负担。在夹紧单元上设有带有顶部和次要安全门的主安全门。主安全门和次安全门在每个安全门上设置的邻接部分彼此抵接。辅助安全门具有沿引导构件摆动的接合构件。接合构件具有沿一个方向弯曲的铰链。当两个安全门关闭时，主安全门可以独立自由地打开和关闭。当二级安全门打开时，两个安全门都连在一起，作为一个单体移动。在主安全门和次安全门单独打开的状态下，当主安全门移动关闭时，铰链构件弯曲并且两个安全门作为一个单元连接在一起。

10. 发明授权

US07251171B2 Semiconductor memory and system apparatus 有权
标题翻译：半导体存储器和系统装置
公开(公告)号：US07251171B2
公开(公告)日：2007-07-31
申请号：US11167318
申请日：2005-06-28
申请人： Koichi Nishimura , Shinichi Yamada , Yukihiro Nomura
发明人： Koichi Nishimura , Shinichi Yamada , Yukihiro Nomura
IPC分类号： G11C7/00 , G11C7/10 , G11C8/00
CPC分类号： G11C7/1045 , G11C11/4072 , G11C2029/0407
摘要： A register part of a mode register has a plurality of operation setting parts in which plural types of operating specifications are respectively set to operate the semiconductor memory. The mode register outputs a soft reset signal when at least a value of one-bit of the register part represents a reset state. A reset signal generator outputs a reset signal for resetting an internal circuit in response to the soft reset signal. In the present invention, a system that controls the semiconductor memory is required to necessarily assign a predetermined bit with a setting command of the mode register in order to generate the soft reset signal. Accordingly, it is possible to reliably reset the internal circuit by external control.
摘要翻译：模式寄存器的寄存器部分具有多个操作设置部分，其中分别设置多种类型的操作规范以操作半导体存储器。当至少寄存器部分的1位的值表示复位状态时，模式寄存器输出软复位信号。复位信号发生器响应于软复位信号输出用于复位内部电路的复位信号。在本发明中，控制半导体存储器的系统需要用模式寄存器的设定命令来分配预定的位，以产生软复位信号。因此，可以通过外部控制可靠地复位内部电路。

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