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    • 3. 发明授权
    • Method of manufacturing field effect transistor
    • 制造场效应晶体管的方法
    • US5888890A
    • 1999-03-30
    • US960548
    • 1997-10-31
    • Kee Chul Kim
    • Kee Chul Kim
    • H01L21/225H01L21/285H01L21/338H01L21/76H01L29/812
    • H01L29/66871H01L21/2258H01L21/28587H01L21/7605H01L29/812
    • A method of manufacturing a field effect transistor according to the present invention is disclosed including the steps of preparing a semiconductor substrate; forming an insulating film for use as high concentration on the semiconductor substrate; forming an insulating film for use as low concentration on the insulating film for use as high concentration; performing a heat treatment on the insulating films to thereby diffuse impurities; forming high concentration regions and low concentration region in the surface of the semiconductor substrate; forming mesa and electrodes on the upper surface and side of the semiconductor substrate; and selectively etching the insulating film for use as low concentration so as to expose a predetermined portion of the upper surface of the semiconductor substrate, to thereby form a gate electrode so as to be in contact with the low concentration region of the predetermined portion.
    • 公开了一种制造根据本发明的场效应晶体管的方法,包括制备半导体衬底的步骤; 在半导体衬底上形成用作高浓度的绝缘膜; 在用作高浓度的绝缘膜上形成用作低浓度的绝缘膜; 对绝缘膜进行热处理从而扩散杂质; 在半导体衬底的表面形成高浓度区域和低浓度区域; 在半导体衬底的上表面和侧面上形成台面和电极; 并选择性地蚀刻用作低浓度的绝缘膜,以暴露半导体衬底的上表面的预定部分,从而形成栅电极,以便与预定部分的低浓度区域接触。