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    • 5. 发明授权
    • Solid-state imaging device
    • 固态成像装置
    • US09054000B2
    • 2015-06-09
    • US13666149
    • 2012-11-01
    • HAMAMATSU PHOTONICS K.K.
    • Motohiro SuyamaAkiomi UjimaKentaro MaetaHisanori SuzukiMasaharu MuramatsuFumio Iwase
    • H04N5/225H01L27/146
    • H01L27/14618H01L2224/16H01L2224/48091H04N5/2253H01L2924/00014
    • A solid-state imaging device 2A includes a CCD-type solid-state imaging element 10 having an imaging plane 12 formed of M×N pixels that are two-dimensionally arrayed in M rows and N columns and N signal readout circuits 20 arranged on one end side in the column direction for each of the columns with respect to the plane 12 and for outputting electrical signals according to the magnitudes of charges taken out of the respective columns, respectively, a C-MOS-type semiconductor element 50 for digital-converting and sequentially outputting as serial signals electrical signals output from the circuits 20 for each of the columns, a heat transfer member 80 having a main surface 81a and a back surface 81b, and a cooling block 84 provided on the surface 81b, and the semiconductor element 50 and the surface 81a of the heat transfer member 80 are bonded to each other.
    • 固态成像装置2A包括CCD型固体摄像元件10,该CCD型固体摄像元件10具有由M×N像素构成的摄像面12,二维排列成M行N列,N信号读出电路20配置在一方 用于每个列相对于平面12的列方向的端侧,并分别根据从各列取出的电荷的大小输出电信号,用于数字转换的C-MOS型半导体元件 并顺序地输出作为串行信号从每个列的电路20输出的电信号,具有主表面81a和后表面81b的传热构件80和设置在表面81b上的冷却块84,以及半导体元件 50和传热构件80的表面81a彼此接合。