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1. 发明授权

US11538671B2 Plasma processing apparatus and data analysis apparatus 有权
公开(公告)号：US11538671B2
公开(公告)日：2022-12-27
申请号：US16666842
申请日：2019-10-29
申请人： Hitachi High-Technologies Corporation
发明人： Ryoji Asakura , Kenji Tamaki , Akira Kagoshima , Daisuke Shiraishi , Masahiro Sumiya
IPC分类号： H01J37/32
摘要： In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.

2. 发明授权

US11410836B2 Analysis method and semiconductor etching apparatus 有权
公开(公告)号：US11410836B2
公开(公告)日：2022-08-09
申请号：US16281652
申请日：2019-02-21
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Ryoji Asakura , Kenji Tamaki , Akira Kagoshima , Daisuke Shiraishi
IPC分类号： H01J37/32 , H01L21/67 , H01L21/311
摘要： There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.

3. 发明授权

US10510519B2 Plasma processing apparatus and data analysis apparatus 有权
公开(公告)号：US10510519B2
公开(公告)日：2019-12-17
申请号：US15050631
申请日：2016-02-23
申请人： Hitachi High-Technologies Corporation
发明人： Ryoji Asakura , Kenji Tamaki , Akira Kagoshima , Daisuke Shiraishi , Masahiro Sumiya
IPC分类号： H01J37/32
摘要： In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.

4. 发明申请

US20140339193A1 Plasma Processing Method 审中-公开
标题翻译：等离子体处理方法
公开(公告)号：US20140339193A1
公开(公告)日：2014-11-20
申请号：US14449516
申请日：2014-08-01
申请人： Hitachi High-Technologies Corporation
发明人： Akira Kagoshima , Daisuke Shiraishi , Yuji Nagatani
IPC分类号： H01J37/32
CPC分类号： H01J37/3299 , G05B13/00 , G05B13/021 , G05B13/042 , G05B19/4184 , H01J37/32449 , H01J37/32926 , H01J37/32935 , H01J2237/3343 , H01L22/20 , H01L22/26
摘要： Method for carrying out plasma processing on a wafer under Run-to-Run control by using a plasma processing apparatus having a plasma processing chamber, a process monitor which monitors a condition in the plasma processing chamber, and an actuator which controls parameters which are constituent elements of a plasma processing condition. The method includes the steps of making one of the parameters a (N−1)th manipulated variable, calculating a first difference between a process monitor value in the plasma processing obtained by the process monitor and a desired value of the process monitor value in the plasma processing, calculating a correction amount of the (N−1)th manipulated variable on the basis of the first difference and a previously obtained correlation between the process monitor value in the plasma processing and the (N−1)th manipulated variable, wherein N is a natural number equal to or larger than 2.
摘要翻译：通过使用具有等离子体处理室的等离子体处理装置，监视等离子体处理室中的状态的过程监视器和控制作为成分的参数的致动器在运行对运行控制下对晶片进行等离子体处理的方法等离子体处理条件的元素。该方法包括以下步骤：使参数a（N-1）操作变量之一，计算由过程监视获得的等离子体处理中的过程监视值与期望值之间的过程监视值的期望值之间的第一差异等离子体处理，基于第一差异计算第（N-1）个操作变量的校正量和先前获得的等离子体处理中的处理监视值与第（N-1）个操作变量之间的相关性，其中 N是等于或大于2的自然数。

5. 发明授权

US10262840B2 Plasma processing apparatus 有权
公开(公告)号：US10262840B2
公开(公告)日：2019-04-16
申请号：US14289773
申请日：2014-05-29
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Akira Kagoshima , Daisuke Shiraishi , Satomi Inoue , Shigeru Nakamoto , Shoji Ikuhara , Toshihiro Morisawa
IPC分类号： G05B13/04 , H01J37/32
摘要： A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen. Thus, stable processed results can be obtained even when variation occurs in processes.

6. 发明授权

US10408762B2 Plasma processing apparatus, plasma processing method and plasma processing analysis method 有权
公开(公告)号：US10408762B2
公开(公告)日：2019-09-10
申请号：US14825098
申请日：2015-08-12
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Ryoji Asakura , Kenji Tamaki , Daisuke Shiraishi , Akira Kagoshima , Satomi Inoue
IPC分类号： H01L21/66 , H01L21/67 , H01L21/3065 , G01N21/68 , H01J37/32
摘要： A plasma processing apparatus, plasma processing method, and plasma processing analysis method in which a suitable combination of wavelength, time interval, and etching condition parameter for control to change etching conditions is determined among wavelengths, time intervals, and changeable parameters for spectroscopic measurement data in order to ensure stable etching conditions. Specifically, a regression equation which represents the correlation between emission intensity and etching result at a wavelength and a time interval is obtained for each of two or more combinations of wavelength, time interval, and etching condition parameter. Furthermore, for each of the combinations, the amount of change is calculated from the regression equation when the value set for the etching condition parameter is changed. Among the combinations, the combination for which the amount of change is the smallest is determined as the combination of wavelength, time interval, and changed etching condition parameter to be used for control.

7. 发明授权

US10262842B2 Analysis method and semiconductor etching apparatus 有权
公开(公告)号：US10262842B2
公开(公告)日：2019-04-16
申请号：US14303636
申请日：2014-06-13
申请人： Hitachi High-Technologies Corporation
发明人： Ryoji Asakura , Kenji Tamaki , Akira Kagoshima , Daisuke Shiraishi
IPC分类号： H01J37/32 , H01L21/67 , H01L21/311
摘要： There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.

8. 发明授权

US10153217B2 Plasma processing apparatus and plasma processing method 有权
公开(公告)号：US10153217B2
公开(公告)日：2018-12-11
申请号：US15437026
申请日：2017-02-20
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Daisuke Shiraishi , Akira Kagoshima , Yuji Nagatani , Satomi Inoue
IPC分类号： H01L21/00 , H01J37/32 , H01L21/66 , H01L21/311 , H01L21/67
摘要： A plasma processing apparatus including a processing chamber, a radio frequency power source, a monitoring unit, and a calculation unit is provided. In the processing chamber, etching target film is etched by using plasma. The radio frequency power source supplies radio frequency electric power. The monitoring unit monitors light emission of the plasma. The calculation unit estimates an etching amount of plasma etching of the etching target film based on an emission intensity and a correlation between the etching amount of the etching target film and the emission intensity, the emission intensity being obtained when removing, by using the plasma, a deposition film deposited as a result of the plasma etching.

9. 发明授权

US09824866B2 Plasma processing method 有权
公开(公告)号：US09824866B2
公开(公告)日：2017-11-21
申请号：US14449516
申请日：2014-08-01
申请人： Hitachi High-Technologies Corporation
发明人： Akira Kagoshima , Daisuke Shiraishi , Yuji Nagatani
IPC分类号： H01J37/32 , H01L21/66 , G05B13/00 , G05B19/418 , G05B13/02 , G05B13/04
CPC分类号： H01J37/3299 , G05B13/00 , G05B13/021 , G05B13/042 , G05B19/4184 , H01J37/32449 , H01J37/32926 , H01J37/32935 , H01J2237/3343 , H01L22/20 , H01L22/26
摘要： Method for carrying out plasma processing on a wafer under Run-to-Run control by using a plasma processing apparatus having a plasma processing chamber, a process monitor which monitors a condition in the plasma processing chamber, and an actuator which controls parameters which are constituent elements of a plasma processing condition. The method includes the steps of making one of the parameters a (N−1)th manipulated variable, calculating a first difference between a process monitor value in the plasma processing obtained by the process monitor and a desired value of the process monitor value in the plasma processing, calculating a correction amount of the (N−1)th manipulated variable on the basis of the first difference and a previously obtained correlation between the process monitor value in the plasma processing and the (N−1)th manipulated variable, wherein N is a natural number equal to or larger than 2.

10. 发明授权

US09464936B2 Plasma processing apparatus and analyzing apparatus 有权
标题翻译：等离子体处理装置和分析装置
公开(公告)号：US09464936B2
公开(公告)日：2016-10-11
申请号：US14023831
申请日：2013-09-11
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Ryoji Asakura , Akira Kagoshima , Daisuke Shiraishi , Kenji Tamaki
IPC分类号： H01J37/32 , G01J3/443 , G01N21/68
CPC分类号： G01J3/443 , G01N21/68 , H01J37/32972 , H01J2237/334
摘要： An etching apparatus calculates an emission intensity in the vicinity of each of a plurality of wavelengths, at which a specified element should emit light, from information indicating light emission measured by an optical emission spectroscope during etching processing and, if it is determined that the calculated emission intensity information and emission intensity information stored in a storage unit are similar, extracts a wavelength, corresponding to the calculated emission intensity, with the wavelength associated with the element.
摘要翻译：蚀刻装置从蚀刻处理期间的由发光分光器测定的发光的信息的信息中计算出特定元素应发光的多个波长中的每一个附近的发光强度，如果确定计算出的存储在存储单元中的发光强度信息和发光强度信息相似，以与元件相关联的波长提取对应于计算的发射强度的波长。

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