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1. 发明申请

US20120286236A1 SUPER LATTICE/QUANTUM WELL NANOWIRES 有权
标题翻译：超级尺寸/质量好的纳米尺寸
公开(公告)号：US20120286236A1
公开(公告)日：2012-11-15
申请号：US13555383
申请日：2012-07-23
申请人： Harold J. HOVEL , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
发明人： Harold J. HOVEL , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
IPC分类号： H01L29/06 , B82Y99/00
CPC分类号： H01L31/18 , B82Y10/00 , B82Y30/00 , C30B29/02 , C30B29/06 , C30B29/40 , C30B29/52 , C30B29/60 , C30B29/605 , C30B33/10 , H01L21/30604 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L31/0352 , H01L33/20
摘要： Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.
摘要翻译：在没有模板的情况下通过从两种或更多种半导体材料的层状结构中去除材料来制造分段半导体纳米线。去除在层状结构的表面上的某些位置处发生，并且优选地沿着结晶轴的方向延伸，使得具有分段结构的纳米线保持在很少或不发生去除的位置。不同片段之间的界面可以垂直于纳米线的纵向方向或与之相垂直。

2. 发明授权

US08878259B2 Super lattice/quantum well nanowires 有权
标题翻译：超晶格/量子阱纳米线
公开(公告)号：US08878259B2
公开(公告)日：2014-11-04
申请号：US13555383
申请日：2012-07-23
申请人： Harold J. Hovel , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
发明人： Harold J. Hovel , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
IPC分类号： H01L29/94 , H01L29/76 , H01L31/119 , H01L31/113 , H01L31/062 , H01L31/18 , B82Y10/00 , B82Y30/00 , C30B29/02 , C30B29/06 , C30B29/40 , C30B29/52 , C30B29/60 , C30B33/10 , H01L21/306 , H01L29/06 , H01L29/12 , H01L31/0352 , H01L33/20
CPC分类号： H01L31/18 , B82Y10/00 , B82Y30/00 , C30B29/02 , C30B29/06 , C30B29/40 , C30B29/52 , C30B29/60 , C30B29/605 , C30B33/10 , H01L21/30604 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L31/0352 , H01L33/20
摘要： Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.
摘要翻译：在没有模板的情况下通过从两种或更多种半导体材料的层状结构中去除材料来制造分段半导体纳米线。去除在层状结构的表面上的某些位置处发生，并且优选地沿着结晶轴的方向延伸，使得具有分段结构的纳米线保持在很少或不发生去除的位置。不同片段之间的界面可以垂直于纳米线的纵向方向或与之相垂直。

3. 发明授权

US08273591B2 Super lattice/quantum well nanowires 有权
标题翻译：超晶格/量子阱纳米线
公开(公告)号：US08273591B2
公开(公告)日：2012-09-25
申请号：US12054886
申请日：2008-03-25
申请人： Harold J. Hovel , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
发明人： Harold J. Hovel , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
IPC分类号： H01L21/00
CPC分类号： H01L31/18 , B82Y10/00 , B82Y30/00 , C30B29/02 , C30B29/06 , C30B29/40 , C30B29/52 , C30B29/60 , C30B29/605 , C30B33/10 , H01L21/30604 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L31/0352 , H01L33/20
摘要： Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.
摘要翻译：在没有模板的情况下通过从两种或更多种半导体材料的层状结构中去除材料来制造分段半导体纳米线。去除在层状结构的表面上的某些位置处发生，并且优选地沿着结晶轴的方向延伸，使得具有分段结构的纳米线保持在很少或不发生去除的位置。不同片段之间的界面可以垂直于纳米线的纵向方向或与之相垂直。

4. 发明申请

US20090242869A1 SUPER LATTICE/QUANTUM WELL NANOWIRES 有权
标题翻译：超级尺寸/质量好的纳米尺寸
公开(公告)号：US20090242869A1
公开(公告)日：2009-10-01
申请号：US12054886
申请日：2008-03-25
申请人： Harold J. Hovel , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
发明人： Harold J. Hovel , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
IPC分类号： H01L31/00 , H01L21/20 , H01L29/06
CPC分类号： H01L31/18 , B82Y10/00 , B82Y30/00 , C30B29/02 , C30B29/06 , C30B29/40 , C30B29/52 , C30B29/60 , C30B29/605 , C30B33/10 , H01L21/30604 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L31/0352 , H01L33/20
摘要： Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.
摘要翻译：在没有模板的情况下通过从两种或更多种半导体材料的层状结构中去除材料来制造分段半导体纳米线。去除在层状结构的表面上的某些位置处发生，并且优选地沿着结晶轴的方向延伸，使得具有分段结构的纳米线保持在很少或不发生去除的位置。不同片段之间的界面可以垂直于纳米线的纵向方向或与之相垂直。

5. 发明申请

US20120285527A1 LOW RESISTANCE, LOW REFLECTION, AND LOW COST CONTACT GRIDS FOR PHOTOVOLTAIC CELLS 有权
标题翻译：低电阻，低反射率和低成本接触网格的光伏电池
公开(公告)号：US20120285527A1
公开(公告)日：2012-11-15
申请号：US13105607
申请日：2011-05-11
申请人： Ronald Goldblatt , Harold J. Hovel , Xiaoyan Shao , Steven E. Steen
发明人： Ronald Goldblatt , Harold J. Hovel , Xiaoyan Shao , Steven E. Steen
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/18 , E04H4/00 , H01L31/022433 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10T29/49002 , Y10T29/49826
摘要： The instant disclosure relates to contact grids for use in photovoltaic cells, wherein a cross-section of the contact grid fingers is shaped as a trapezoid, as well as a method of making photovoltaic cells comprising these contact grids. The contact grids of the instant disclosure are cost effective and, due to their thick metal grids, exhibit minimum resistance. Despite having thick metal grids, the unique shape of the contact grid fingers of the instant disclosure allow the photovoltaic cells in which they are employed to retain more solar energy than traditional solar cells by reflecting incoming solar energy back onto the surface of the solar cell instead of reflecting this energy away from the cell.
摘要翻译：本公开涉及用于光伏电池的接触栅格，其中接触栅格指的横截面被成形为梯形，以及制造包括这些接触栅格的光伏电池的方法。本公开的接触网格具有成本效益，并且由于其厚的金属网格显示出最小的电阻。尽管具有厚的金属网格，本公开的接触网格指状物的独特形状允许其中使用它们的光伏电池通过将进入的太阳能反射回太阳能电池的表面而保留比传统太阳能电池更多的太阳能，而不是将这种能量从电池中反射出来。

6. 发明申请

US20100304519A1 METHOD OF FABRICATING SOLAR CELL CHIPS 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：US20100304519A1
公开(公告)日：2010-12-02
申请号：US12849448
申请日：2010-08-03
申请人： Hans-Juergen Eickelmann , Michael Haag , Harold J. Hovel , Rainer Klaus Krause , Markus Schmidt , Xiaoyan Shao , Steven Erik Steen
发明人： Hans-Juergen Eickelmann , Michael Haag , Harold J. Hovel , Rainer Klaus Krause , Markus Schmidt , Xiaoyan Shao , Steven Erik Steen
IPC分类号： H01L31/18 , H01L21/027 , H01L21/283
CPC分类号： H01L31/068 , H01L31/02168 , H01L31/022425 , H01L31/022433 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating solar cell chips. The method includes creating an integrated circuit chip process route for fabricating integrated circuit chips using integrated circuit wafers in an integrated circuit fabrication facility; creating a solar cell process route for fabricating solar cells using solar cell wafers in the integrated circuit fabrication facility; releasing integrated circuit chip wafers and solar cell wafers into tool queues of tools of the an integrated circuit fabrication facility; and processing the solar cell wafers on at least some tools of the integrated circuit fabrication facility used to process the integrated circuit wafers. Also the process used to fabricate the solar cell chips.
摘要翻译：制造太阳能电池芯片的方法。该方法包括在集成电路制造设备中创建用于使用集成电路晶片制造集成电路芯片的集成电路芯片工艺路线; 在集成电路制造设备中创建使用太阳能电池晶片制造太阳能电池的太阳能电池工艺路线; 将集成电路芯片晶片和太阳能电池晶片释放到集成电路制造设备的工具的工具队列中; 以及在用于处理集成电路晶片的集成电路制造设备的至少一些工具上处理太阳能电池晶片。也是制造太阳能电池芯片的过程。

7. 发明授权

US08426236B2 Method and structure of photovoltaic grid stacks by solution based processes 有权
标题翻译：基于解决方案的光伏电网堆栈的方法和结构
公开(公告)号：US08426236B2
公开(公告)日：2013-04-23
申请号：US12775939
申请日：2010-05-07
申请人： Cyril Cabral, Jr. , Harold J. Hovel , Xiaoyan Shao
发明人： Cyril Cabral, Jr. , Harold J. Hovel , Xiaoyan Shao
IPC分类号： H01L21/00
CPC分类号： H01L31/18 , H01L31/022425 , Y02E10/50
摘要： A grid stack structure of a solar cell, which includes a silicon substrate, wherein a front side of the silicon is doped with phosphorus to form a n-emitter and a back side of the silicon is screen printed with aluminum (Al) metallization; a dielectric layer, which acts as an antireflection coating (ARC), applied on the silicon; a mask layer applied on the front side to define a grid opening of the dielectric layer, wherein an etching method is applied to open an unmasked grid area; a light-induced plated nickel or cobalt layer applied to the front side with electrical contact to the back side Al metallization; a silicide layer formed by rapid thermal annealing of the plated nickel (Ni) or cobalt (Co); an optional barrier layer electrodeposited on the silicide; a copper (Cu) layer electrodeposited on the silicide/barrier film layer; and a thin protective layer is chemically applied or electrodeposited on top of the Cu layer.
摘要翻译：包括硅衬底的太阳能电池的栅格堆叠结构，其中硅的正面被磷掺杂以形成n发射极，硅的背面用铝（Al）金属化丝网印刷; 作为抗反射涂层（ARC）的介电层，施加在硅上; 施加在前侧的掩模层以限定电介质层的栅格开口，其中施加蚀刻方法以打开未屏蔽的栅格区域; 施加到前侧的光诱导的镀镍或钴层与后侧Al金属化电接触; 通过镀镍（Ni）或钴（Co）的快速热退火形成的硅化物层; 电沉积在硅化物上的可选阻挡层; 电沉积在硅化物/阻挡膜层上的铜（Cu）层; 并且将薄的保护层化学施加或电沉积在Cu层的顶部上。

8. 发明授权

US07897434B2 Methods of fabricating solar cell chips 有权
标题翻译：制造太阳能电池芯片的方法
公开(公告)号：US07897434B2
公开(公告)日：2011-03-01
申请号：US12189911
申请日：2008-08-12
申请人： Hans-Juergen Eickelmann , Michael Haag , Harold J. Hovel , Rainer Klaus Krause , Markus Schmidt , Xiaoyan Shao , Steven Erik Steen
发明人： Hans-Juergen Eickelmann , Michael Haag , Harold J. Hovel , Rainer Klaus Krause , Markus Schmidt , Xiaoyan Shao , Steven Erik Steen
IPC分类号： H01L21/00
CPC分类号： H01L31/068 , H01L31/02168 , H01L31/022425 , H01L31/022433 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating solar cell chips. The method includes creating an integrated circuit chip process route for fabricating integrated circuit chips using integrated circuit wafers in an integrated circuit fabrication facility; creating a solar cell process route for fabricating solar cells using solar cell wafers in the integrated circuit fabrication facility; releasing integrated circuit chip wafers and solar cell wafers into tool queues of tools of the an integrated circuit fabrication facility; and processing the solar cell wafers on at least some tools of the integrated circuit fabrication facility used to process the integrated circuit wafers. Also the process used to fabricate the solar cell chips.
摘要翻译：制造太阳能电池芯片的方法。该方法包括在集成电路制造设备中创建用于使用集成电路晶片制造集成电路芯片的集成电路芯片工艺路线; 在集成电路制造设备中创建使用太阳能电池晶片制造太阳能电池的太阳能电池工艺路线; 将集成电路芯片晶片和太阳能电池晶片释放到集成电路制造设备的工具的工具队列中; 以及在用于处理集成电路晶片的集成电路制造设备的至少一些工具上处理太阳能电池晶片。也是制造太阳能电池芯片的过程。

9. 发明申请

US20100037939A1 METHODS OF FABRICATING SOLAR CELL CHIPS 有权
标题翻译：制造太阳能电池的方法
公开(公告)号：US20100037939A1
公开(公告)日：2010-02-18
申请号：US12189911
申请日：2008-08-12
申请人： Hans-Juergen Eickelmann , Michael Haag , Harold J. Hovel , Rainer Klaus Krause , Markus Schmidt , Xiaoyan Shao , Steven Erik Steen
发明人： Hans-Juergen Eickelmann , Michael Haag , Harold J. Hovel , Rainer Klaus Krause , Markus Schmidt , Xiaoyan Shao , Steven Erik Steen
IPC分类号： H01L31/00
CPC分类号： H01L31/068 , H01L31/02168 , H01L31/022425 , H01L31/022433 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating solar cell chips. The method includes creating an integrated circuit chip process route for fabricating integrated circuit chips using integrated circuit wafers in an integrated circuit fabrication facility; creating a solar cell process route for fabricating solar cells using solar cell wafers in the integrated circuit fabrication facility; releasing integrated circuit chip wafers and solar cell wafers into tool queues of tools of the an integrated circuit fabrication facility; and processing the solar cell wafers on at least some tools of the integrated circuit fabrication facility used to process the integrated circuit wafers. Also the process used to fabricate the solar cell chips.
摘要翻译：制造太阳能电池芯片的方法。该方法包括在集成电路制造设备中创建用于使用集成电路晶片制造集成电路芯片的集成电路芯片工艺路线; 在集成电路制造设备中创建使用太阳能电池晶片制造太阳能电池的太阳能电池工艺路线; 将集成电路芯片晶片和太阳能电池晶片释放到集成电路制造设备的工具的工具队列中; 以及在用于处理集成电路晶片的集成电路制造设备的至少一些工具上处理太阳能电池晶片。也是制造太阳能电池芯片的过程。

10. 发明授权

US09337363B2 Low resistance, low reflection, and low cost contact grids for photovoltaic cells 有权
标题翻译：低电阻，低反射和低成本的光伏电池接触网格
公开(公告)号：US09337363B2
公开(公告)日：2016-05-10
申请号：US13105607
申请日：2011-05-11
申请人： Ronald Goldblatt , Harold J. Hovel , Xiaoyan Shao , Steven E. Steen
发明人： Ronald Goldblatt , Harold J. Hovel , Xiaoyan Shao , Steven E. Steen
IPC分类号： H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号： H01L31/18 , E04H4/00 , H01L31/022433 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10T29/49002 , Y10T29/49826
摘要： The instant disclosure relates to contact grids for use in photovoltaic cells, wherein a cross-section of the contact grid fingers is shaped as a trapezoid, as well as a method of making photovoltaic cells comprising these contact grids. The contact grids of the instant disclosure are cost effective and, due to their thick metal grids, exhibit minimum resistance. Despite having thick metal grids, the unique shape of the contact grid fingers of the instant disclosure allow the photovoltaic cells in which they are employed to retain more solar energy than traditional solar cells by reflecting incoming solar energy back onto the surface of the solar cell instead of reflecting this energy away from the cell.
摘要翻译：本公开涉及用于光伏电池的接触栅格，其中接触栅格指的横截面被成形为梯形，以及制造包括这些接触栅格的光伏电池的方法。本公开的接触网格具有成本效益，并且由于其厚的金属网格显示出最小的电阻。尽管具有厚的金属网格，本公开的接触网格指状物的独特形状允许其中使用它们的光伏电池通过将进入的太阳能反射回太阳能电池的表面而保留比传统太阳能电池更多的太阳能，而不是将这种能量从电池中反射出来。

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