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1. 发明申请

US20110188297A1 MAGNETIC MEMORY ELEMENT, DRIVING METHOD FOR SAME, AND NONVOLATILE STORAGE DEVICE 有权
标题翻译：磁记忆元件，用于其的驱动方法和非易失存储器件
公开(公告)号：US20110188297A1
公开(公告)日：2011-08-04
申请号：US13001343
申请日：2008-09-05
申请人： Yasushi Ogimoto , Haruo Kawakami
发明人： Yasushi Ogimoto , Haruo Kawakami
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： H01F10/3295 , B82Y25/00 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607 , H01F10/133 , H01F10/3268 , H01F10/3286 , H01L27/224 , H01L43/08 , Y10T428/1107 , Y10T428/1143
摘要： In accordance with one aspect of the invention, a magnetic memory element records information in a spin valve structure having a free layer, a pinning layer, and a nonmagnetic layer sandwiched therebetween. The magnetic memory element further has, on the free layer, a separate nonmagnetic layer and a magnetic change layer having magnetic characteristics which change according to temperature. Multiple cutouts, including one cutout with a different shape, are provided in a peripheral portion of the spin valve structure. A method of driving the magnetic memory element is characterized in that information is recorded by applying unipolar electric pulses.
摘要翻译：根据本发明的一个方面，磁存储元件将信息记录在具有自由层，钉扎层和夹在其间的非磁性层的自旋阀结构中。磁存储元件在自由层上还具有单独的非磁性层和具有根据温度变化的磁特性的磁性变化层。在自旋阀结构的周边部分设置有多个切口，包括具有不同形状的一个切口。驱动磁存储元件的方法的特征在于通过施加单极电脉冲来记录信息。

2. 发明申请

US20110102939A1 SPIN VALVE ELEMENT, METHOD OF DRIVING THE SAME, AND STORAGE DEVICE USING THE SAME 有权
标题翻译：旋转阀元件，其驱动方法以及使用其的存储装置
公开(公告)号：US20110102939A1
公开(公告)日：2011-05-05
申请号：US12992864
申请日：2008-09-05
申请人： Haruo Kawakami , Yasushi Ogimoto
发明人： Haruo Kawakami , Yasushi Ogimoto
IPC分类号： G11B5/82 , G11B5/012
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G01R33/098 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , H01F10/325 , H01F10/3254 , H01F10/3286
摘要： Provided is a spin valve element capable of performing multi-value recording, which includes a pair of ferromagnetic layers having different coercivities from each other, and sandwiching an insulating layer or a non-magnetic layer. The ferromagnetic layer having the smaller coercivity has a substantially circular in-plane profile, and a plurality of island-shaped non-magnetic portions IN, IE, IW, and IS are included. In addition, a storage device is manufactured by using such a spin valve element.
摘要翻译：提供了能够进行多值记录的自旋阀元件，其包括彼此具有不同矫顽力的一对铁磁层，并夹持绝缘层或非磁性层。具有较小矫顽力的铁磁层具有大致圆形的面内轮廓，并且包括多个岛状非磁性部分IN，IE，IW和IS。此外，通过使用这种自旋阀元件制造存储装置。

3. 发明申请

US20100308946A1 SPIN VALVE ELEMENT DRIVING METHOD AND SPIN VALVE ELEMENT 有权
标题翻译：旋转阀元件驱动方式和旋转阀元件
公开(公告)号：US20100308946A1
公开(公告)日：2010-12-09
申请号：US12809550
申请日：2008-08-28
申请人： Haruo Kawakami , Yasushi Ogimoto
发明人： Haruo Kawakami , Yasushi Ogimoto
IPC分类号： H01F7/00
CPC分类号： H01L43/08 , B82Y25/00 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01F10/329 , H03B15/006
摘要： A spin valve element driving method, and a spin valve element employing such a method, for causing microwave oscillation in a spin valve element. The spin valve element includes an intermediate layer and a pair of ferromagnetic layers including a fixed layer and a free layer sandwiching the intermediate layer, the fixed layer having a higher coercivity than the free layer, and being magnetized in a direction substantially perpendicular to a film plane thereof. The method includes a driving step of passing current from one of the pair of ferromagnetic layers to the other through the intermediate layer.
摘要翻译：自旋阀元件驱动方法和采用这种方法的自旋阀元件，用于在自旋阀元件中引起微波振荡。自旋阀元件包括中间层和一对铁磁层，其包括夹持中间层的固定层和自由层，固定层具有比自由层更高的矫顽力，并且在基本垂直于膜的方向上被磁化它的平面。该方法包括将电流从一对铁磁层中的一个通过中间层传递到另一个的驱动步骤。

4. 发明授权

US07759674B2 Transistor with tunneling dust electrode 有权
标题翻译：晶体管与隧道式粉尘电极
公开(公告)号：US07759674B2
公开(公告)日：2010-07-20
申请号：US10592664
申请日：2005-09-01
申请人： Yang Yang , Haruo Kawakami
发明人： Yang Yang , Haruo Kawakami
IPC分类号： H01L51/30
CPC分类号： H01L51/0504 , H01L51/0055 , H01L51/0508 , H01L51/055
摘要： A transistor-like electronic device operates somewhat as a triode vacuum tube. Two electrodes (source and drain) sandwich an intermediate layer of organic semiconductor material in which fine metallic particles are dispersed. Due to the fineness and number of the particles, they are close enough to each other that electrons can tunnel from one to the nest, so that a voltage impressed at the edge of the intermediate layer causes current to flow through the dispersed particles, and causes the entire layer to reach the impressed voltage. By varying the impressed voltage, the voltage of the intermediate layer is caused to vary, which controls conduction between the source and drain. By making the particles small, the proportion of open area between the particles remains large so the electrons have room to move around the particles and through the organic material in intermediate layer, allowing high currents to flow through the device.
摘要翻译：晶体管状电子器件稍微作为三极管真空管工作。两个电极（源极和漏极）夹着分散有金属微粒的有机半导体材料的中间层。由于颗粒的细度和数量，它们彼此足够接近，电子可以从一个隧道到巢穴，使得在中间层的边缘处施加的电压导致电流流过分散的颗粒，并且导致整个层达到外加电压。通过改变外加电压，使中间层的电压发生变化，从而控制源极和漏极之间的导通。通过使颗粒较小，颗粒之间的开放面积比例保持较大，因此电子具有在颗粒周围移动的空间，并通过中间层中的有机材料移动，允许高电流流过该装置。

5. 发明授权

US4610841A Corrosion preventing device for in-pile structures of helium gas-cooled reactor 失效
标题翻译：氦气冷却反应堆桩内结构防锈装置
公开(公告)号：US4610841A
公开(公告)日：1986-09-09
申请号：US582519
申请日：1984-02-22
申请人： Masao Yamada , Haruo Kawakami
发明人： Masao Yamada , Haruo Kawakami
IPC分类号： G21C19/303 , G21C9/00
CPC分类号： G21C19/303
摘要： A corrosion preventing device for use in an in-pile structure of a helium gas-cooled reactor for removing gaseous oxidating components from a primary cooling gas in a pressure vessel of the reactor to thus prevent oxidation of graphite members of the reactor pile. An oxidation product consuming member is provided in series with a primary cooling gas supply pipeline or a bypass pipeline thereof along with a device for heating the oxidation product consuming member. The oxidation product consuming member may be a single cylindrical member or a bundle of rods having a large number of through holes formed therein in a honeycomb pattern in the lengthwise direction thereof or a large number of balls. The material of the oxidation product consuming member should have a high affinity for oxidizing impurities at elevated temperatures. Preferably, the material of the oxidation product consuming member is carbon or graphite.
摘要翻译：一种用于氦气冷却反应堆的堆叠结构的防腐蚀装置，用于从反应堆的压力容器中的一级冷却气体中除去气态氧化组分，从而防止反应堆堆石墨的氧化。与主要冷却气体供应管线或其旁路管道串联地提供氧化产物消耗构件以及用于加热氧化产物消耗构件的装置。氧化产物消耗部件可以是单个的圆柱形部件或具有在其长度方向上以蜂窝状图案形成的大量通孔的大量的棒或大量的球。氧化产物消耗部件的材料应在高温下对于氧化杂质具有高亲和力。优选地，氧化产物消耗部件的材料是碳或石墨。

6. 发明授权

US08411395B2 Spin valve element and method of driving same 有权
标题翻译：自旋阀元件及其驱动方法
公开(公告)号：US08411395B2
公开(公告)日：2013-04-02
申请号：US12739740
申请日：2008-08-28
申请人： Haruo Kawakami , Yasushi Ogimoto , Eiki Adachi
发明人： Haruo Kawakami , Yasushi Ogimoto , Eiki Adachi
IPC分类号： G11B2005/3996 , G11B5/012
CPC分类号： H01F10/325 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01L43/08 , H01L43/12 , H03B15/006 , H03C1/08
摘要： A method for driving a spin valve element, including passing driving current through the spin valve element to generate an oscillation signal, and performing amplitude modulation of the driving current at a frequency lower than the oscillation frequency of oscillation signals. This amplitude modulation can be ON-OFF modulation, and the interval ton in the conducting state of the ON-OFF modulation is made to satisfy the relation ton
摘要翻译：一种用于驱动自旋阀元件的方法，包括使驱动电流通过自旋阀元件以产生振荡信号，并且以低于振荡信号的振荡频率的频率执行驱动电流的幅度调制。该幅度调制可以是ON-OFF调制，并且使ON-OFF调制的导通状态下的间隔ton满足关系ton

7. 发明申请

US20110143166A1 SPIN-VALVE RECORDING ELEMENT AND STORAGE DEVICE 有权
标题翻译：旋转阀记录元件和存储装置
公开(公告)号：US20110143166A1
公开(公告)日：2011-06-16
申请号：US12737118
申请日：2008-09-05
申请人： Haruo Kawakami , Yasushi Ogimoto
发明人： Haruo Kawakami , Yasushi Ogimoto
IPC分类号： G11B5/66
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11C11/161 , G11C11/1675 , G11C11/5607 , G11C19/0808 , H01F10/325 , H01F10/3254 , H01F10/3286 , Y10T428/1107 , Y10T428/1143
摘要： A spin-valve element has a pair of ferromagnetic layers having mutually different coercive forces, sandwiching an insulating layer or a nonmagnetic layer therebetween. The in-plane shape of the spin-valve element is substantially circular in shape but is provided, in the peripheral portion, with a plurality of cutouts NS, NW, NE, NN. Preferably, the shape of at least one cutout be made different from that of others. Moreover, a storage device that employs such a spin-valve element is provided.
摘要翻译：自旋阀元件具有一对具有相互不同的矫顽力的铁磁层，其间夹有绝缘层或非磁性层。自旋阀元件的平面形状基本上是圆形的，但是在周边部分中设置有多个切口NS，NW，NE，NN。优选地，至少一个切口的形状与其他切口的形状不同。此外，提供了采用这种自旋阀元件的存储装置。

8. 发明授权

US07924609B2 Spin valve element driving method and spin valve element 有权
标题翻译：自旋阀元件驱动方式和自旋阀元件
公开(公告)号：US07924609B2
公开(公告)日：2011-04-12
申请号：US12809550
申请日：2008-08-28
申请人： Haruo Kawakami , Yasushi Ogimoto
发明人： Haruo Kawakami , Yasushi Ogimoto
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , B82Y25/00 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01F10/329 , H03B15/006
摘要： A spin valve element driving method, and a spin valve element employing such a method, for causing microwave oscillation in a spin valve element. The spin valve element includes an intermediate layer and a pair of ferromagnetic layers including a fixed layer and a free layer sandwiching the intermediate layer, the fixed layer having a higher coercivity than the free layer, and being magnetized in a direction substantially perpendicular to a film plane thereof. The method includes a driving step of passing current from one of the pair of ferromagnetic layers to the other through the intermediate layer.
摘要翻译：自旋阀元件驱动方法和采用这种方法的自旋阀元件，用于在自旋阀元件中引起微波振荡。自旋阀元件包括中间层和一对铁磁层，其包括夹持中间层的固定层和自由层，固定层具有比自由层更高的矫顽力，并且在基本垂直于膜的方向上被磁化它的平面。该方法包括将电流从一对铁磁层中的一个通过中间层传递到另一个的驱动步骤。

9. 发明授权

US07807515B2 Oxide semiconductor, thin-film transistor and method for producing the same 失效
标题翻译：氧化物半导体，薄膜晶体管及其制造方法
公开(公告)号：US07807515B2
公开(公告)日：2010-10-05
申请号：US12086628
申请日：2007-05-25
申请人： Hisato Kato , Haruo Kawakami , Nobuyuki Sekine , Kyoko Kato
发明人： Hisato Kato , Haruo Kawakami , Nobuyuki Sekine , Kyoko Kato
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/78693 , C01G19/006 , C01P2006/40 , H01L29/66969
摘要： Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: Inx+1MZny+1SnzO(4+1.5x+y+2z) (wherein M is Ga or Al, 0≦x≦1, −0.2≦y≦1.2, z≧0.4 and 0.5≦(x+y)/z≦3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.
摘要翻译：公开了具有非晶结构的氧化物半导体，其中实现了更高的迁移率和降低的载流子浓度。还公开了薄膜晶体管，氧化物半导体的制造方法以及薄膜晶体管的制造方法。具体公开了一种氧化物半导体，其特征在于由以下通式表示的无定形氧化物组成：Inx + 1MZny + 1SnzO（4 + 1.5x + y + 2z）（其中M为Ga或Al，0＆nlE; x＆nlE ; 1，-0.2＆nlE; y＆nlE; 1.2，z≥0.4和0.5＆nlE;（x + y）/ z＆nlE; 3）。该氧化物半导体优选在成膜后在氧化气体气氛中进行热处理。还具体公开了一种薄膜晶体管，其特征在于包括氧化物半导体。

10. 发明申请

US20070252126A1 Driver and Drive Method for Organic Bistable Electrical Device and Organic Led Display 审中-公开
标题翻译：有机双稳电器和有机LED显示器的驱动和驱动方法
公开(公告)号：US20070252126A1
公开(公告)日：2007-11-01
申请号：US10592079
申请日：2005-03-15
申请人： Haruo Kawakami , Yang Yang , Liping Ma
发明人： Haruo Kawakami , Yang Yang , Liping Ma
IPC分类号： H01L47/00 , H01L51/00
CPC分类号： G11C13/0014 , B82Y10/00 , G09G3/2011 , G09G3/2014 , G09G3/3208 , G09G3/3216 , G09G2300/0473 , H01L27/24 , H01L27/3281 , H01L51/0067 , H01L51/0068 , H01L51/0081 , H01L51/0575 , H01L51/0591 , H01L51/0595 , H05B33/0896
摘要： An electroluminescent device based on bistability, and method for its use. The device alternates between a low resistance state and a high resistance state by application of an electrical voltage. A bistable electrical device has two electrodes sandwiching an organic material that produces bistable action. An organic light emitting diode next to the bistable device is emits light when conducting. To achieve graduated light output, circuitry is provided for applying to the bistable device a constant bias voltage intermediate a turnoff voltage and a turn-on voltage, and electrical pulses variable in a temporal pulse width or in an additional voltage, or in both. The additional voltage is superimposed on the bias voltage while the pulse is applied. The current through the bistable device, and therefore the brightness of light emitted by the diode after the pulse has ceased, are controlled by varying the pulse width or the additional voltage.
摘要翻译：基于双稳态的电致发光器件及其使用方法。该装置通过施加电压在低电阻状态和高电阻状态之间交替。双稳电气装置具有夹持产生双稳态作用的有机材料的两个电极。双稳态器件旁边的有机发光二极管在导通时发光。为了实现渐变光输出，提供电路用于向双稳态器件施加恒定的偏置电压，其中间断开电压和导通电压，以及可在时间脉冲宽度或附加电压中或两者中的电脉冲。当施加脉冲时，附加电压叠加在偏置电压上。通过双稳态器件的电流，并且因此在脉冲停止之后由二极管发射的光的亮度通过改变脉冲宽度或附加电压来控制。

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