专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08139703B2 Data relay apparatus and semiconductor integrated circuit having the same 失效
标题翻译：数据中继装置及具有该数据中继装置的半导体集成电路
公开(公告)号：US08139703B2
公开(公告)日：2012-03-20
申请号：US12038616
申请日：2008-02-27
申请人： Ic-Su Oh , Kun-Woo Park , Yong-Ju Kim , Hee-Woong Song , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee
发明人： Ic-Su Oh , Kun-Woo Park , Yong-Ju Kim , Hee-Woong Song , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee
IPC分类号： H03D3/24
CPC分类号： H03K5/135 , H03L7/06
摘要： A data relay apparatus according to one embodiment described herein can include a phase detection unit that can detect a phase difference between a clock output from a transmitter and a clock output from a receiver, and generate a plurality of phase detection signals, a data relay control unit that can distinguish a difference in clock timing between the clocks of the transmitter and the receiver in response to the plurality of phase detection signals, and output a relay data selection signal and a relay control clock, and a data relay unit that can transmit data output from the receiver to the transmitter in response to the relay data selection signal and the relay control clock.
摘要翻译：根据本文所述的一个实施例的数据中继装置可以包括相位检测单元，其可以检测从发送器输出的时钟与从接收器输出的时钟之间的相位差，并且生成多个相位检测信号，数据中继控制单元，其可以响应于所述多个相位检测信号来区分发射机和接收机的时钟之间的时钟定时的差异，并且输出中继数据选择信号和中继控制时钟，以及可以发送数据的数据中继单元响应于继电器数据选择信号和继电器控制时钟从接收器输出到发送器。

2. 发明授权

US07864605B2 Apparatus for removing crosstalk in semiconductor memory device 失效
标题翻译：用于去除半导体存储器件中的串扰的装置
公开(公告)号：US07864605B2
公开(公告)日：2011-01-04
申请号：US12347518
申请日：2008-12-31
申请人： Ji-Wang Lee , Kun-Woo Park , Yong-Ju Kim , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi
发明人： Ji-Wang Lee , Kun-Woo Park , Yong-Ju Kim , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi
IPC分类号： G11C7/00
CPC分类号： G11C7/02 , G11C5/063 , G11C7/1078 , G11C7/1084
摘要： An apparatus for removing crosstalk in a semiconductor memory device includes pads for receiving externally provided signals, transmission lines for delivering the signals received by each of the pads to corresponding elements in the apparatus, and capacitors, coupled between adjacent ones of the lines, for adjusting the transmission delay of the signals depending on a signal transmission mode between the adjacent lines.
摘要翻译：一种用于去除半导体存储器件中的串扰的装置包括用于接收外部提供的信号的焊盘，用于将由每个焊盘接收的信号传递到设备中的相应元件的传输线以及耦合在相邻线之间的电容器，以便调整信号的传输延迟取决于相邻线路之间的信号传输模式。

3. 发明申请

US20090060083A1 RECEIVER CIRCUIT 审中-公开
标题翻译：接收电路
公开(公告)号：US20090060083A1
公开(公告)日：2009-03-05
申请号：US12167077
申请日：2008-07-02
申请人： Tae-Jin Hwang , Kun-Woo Park , Yong-Ju Kim , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Hae-Rang Choi , Ji-Wang Lee
发明人： Tae-Jin Hwang , Kun-Woo Park , Yong-Ju Kim , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Hae-Rang Choi , Ji-Wang Lee
IPC分类号： H04L25/34
CPC分类号： H04L25/4917
摘要： A receiver circuit includes a voltage controller configured to output an offset voltage varied according to a control code; and a multilevel receiving block configured to be controlled by the offset voltage and to amplify and output input data signal having multilevels.
摘要翻译：接收器电路包括：电压控制器，被配置为输出根据控制码变化的偏移电压; 以及被配置为由偏移电压控制并且放大并输出具有多电平的输入数据信号的多电平接收块。

4. 发明申请

US20090116306A1 DELAY LOCKED LOOP CIRCUIT OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的延迟锁定环路电路
公开(公告)号：US20090116306A1
公开(公告)日：2009-05-07
申请号：US12262517
申请日：2008-10-31
申请人： Hee-Woong SONG , Kun-Woo Park , Yong-Ju Kim , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee
发明人： Hee-Woong SONG , Kun-Woo Park , Yong-Ju Kim , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee
IPC分类号： G11C7/00 , G11C8/18 , H03L7/06
CPC分类号： G11C29/02 , G11C7/22 , G11C7/222 , G11C29/023 , G11C29/028 , H03L7/0812 , H03L7/089 , H03L7/095
摘要： A semiconductor memory device includes a delay locked loop circuit that can control input/output timing of data according to a system clock of a high frequency. The semiconductor memory device includes a phase comparator configured to detect a phase difference between an internal clock and a reference clock to output a state signal having a pulse width corresponding to the detected phase difference, a phase adjuster configured to generate a digital code for determining a delay time corresponding to the state signal for locking a phase of the internal clock, a digital-to-analog converter configured to convert the digital code to an analog voltage, and a multiphase delay signal generator configured to delay the internal clock according to a bias voltage corresponding to the analog voltage to feed back the delayed internal clock as the internal clock and generate multiphase delay signals.
摘要翻译：半导体存储器件包括可以根据高频系统时钟控制数据的输入/输出定时的延迟锁定环电路。半导体存储装置包括：相位比较器，被配置为检测内部时钟和参考时钟之间的相位差，以输出具有与检测到的相位差相对应的脉冲宽度的状态信号;相位调整器，被配置为生成用于确定对应于用于锁定内部时钟的相位的状态信号的延迟时间，配置成将数字代码转换为模拟电压的数模转换器，以及被配置为根据偏置来延迟内部时钟的多相延迟信号发生器对应于模拟电压的电压反馈延迟的内部时钟作为内部时钟，并产生多相延迟信号。

5. 发明授权

US07667493B2 Data transmitter 失效
标题翻译：数据发送器
公开(公告)号：US07667493B2
公开(公告)日：2010-02-23
申请号：US12164948
申请日：2008-06-30
申请人： Hae-Rang Choi , Kun-Woo Park , Yong-Ju Kim , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Ji-Wang Lee
发明人： Hae-Rang Choi , Kun-Woo Park , Yong-Ju Kim , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Ji-Wang Lee
IPC分类号： H03K19/0175
CPC分类号： G11C7/1051 , G11C7/1057 , H04L25/4902 , H04L25/4917
摘要： Data transmitter includes a first and second output nodes terminated to a first level, a controller configured to generate an off signal that is activated by logically combining first and second data during a low-power mode, a first driver configured to drive the first or second output node to a second level in response to the first data and a second driver configured to drive the first or second output node to the second level with a driving force different from that of the first driver in response to the second data, the second driver being turned off when the off signal is activated.
摘要翻译：数据发射机包括终止于第一电平的第一和第二输出节点，被配置为产生通过在低功率模式期间逻辑地组合第一和第二数据而被激活的关闭信号的控制器，配置成驱动第一或第二电平的第一驱动器输出节点响应于第一数据到第二级，第二驱动器被配置为响应于第二数据以与第一驱动器不同的驱动力将第一或第二输出节点驱动到第二级，第二驱动器当关闭信号被激活时被关闭。

6. 发明申请

US20090302965A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20090302965A1
公开(公告)日：2009-12-10
申请号：US12266787
申请日：2008-11-07
申请人： Ji-Wang Lee , Kun-Woo Park , Yong-Ju Kim , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi
发明人： Ji-Wang Lee , Kun-Woo Park , Yong-Ju Kim , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi
IPC分类号： H01P9/00
CPC分类号： H04B3/32 , H03K5/131 , H03K5/135 , H03K5/1534 , H03K2005/00071 , H04L25/0272 , H04L25/0286 , H04L25/029
摘要： A semiconductor device includes transmission lines for conveying signals and transition detectors, each of which checks whether a transmission signal on each of the plurality of transmission lines is transited. If the signal is transited, its transition shape is detected. A signal mode determining unit determines signal transmission modes between adjacent transmission lines in response to output signals from the plurality of transition detectors. Delay units are coupled to the respective transmission lines for adjusting transmission delays of the transmission signals depending on corresponding output signal from the signal mode determining units.
摘要翻译：半导体器件包括用于传送信号的传输线和转换检测器，每个传输线检查多条传输线中的每条传输线上的传输信号是否被转换。如果信号被转移，则检测其转换形状。信号模式确定单元响应于来自多个转换检测器的输出信号来确定相邻传输线之间的信号传输模式。延迟单元耦合到各个传输线，用于根据来自信号模式确定单元的相应输出信号来调整传输信号的传输延迟。

7. 发明申请

US20090128200A1 RECEIVER CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS 失效
标题翻译：半导体存储器接收器电路
公开(公告)号：US20090128200A1
公开(公告)日：2009-05-21
申请号：US12175224
申请日：2008-07-17
申请人： Tae-Jin Hwang , Kun-Woo Park , Yong-Ju Kim , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Hae-Rang Choi , Ji-Wang Lee
发明人： Tae-Jin Hwang , Kun-Woo Park , Yong-Ju Kim , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Hae-Rang Choi , Ji-Wang Lee
IPC分类号： H03L7/00 , H03L5/00
CPC分类号： G11C7/1078 , G11C7/1084 , G11C7/1087
摘要： A receiver circuit capable of controlling setup/hold time includes a first phase transmission unit configured to generate a first output signal by detecting input data according to plural detection levels while being synchronized with a first clock signal, and controlling setup/hold time of the first output signal based on a level of a first offset voltage, a level converter configured to control a voltage level of the first output signal according to a first code, and a second phase transmission unit configured to receive an output signal of the level converter for as a second offset voltage while being synchronized with a second clock signal, to generate a second output signal by detecting the input data according to the detection levels, and to control setup/hold time of the second output signal.
摘要翻译：能够控制建立/保持时间的接收机电路包括：第一相位发送单元，被配置为通过在与第一时钟信号同步的同时根据多个检测电平检测输入数据来生成第一输出信号，以及控制第一输入信号的建立/保持时间基于第一偏移电压的电平的输出信号，被配置为根据第一代码来控制第一输出信号的电压电平的电平转换器;以及第二相位发送单元，被配置为接收电平转换器的输出信号作为第二偏移电压，同时与第二时钟信号同步，通过根据检测电平检测输入数据产生第二输出信号，并控制第二输出信号的建立/保持时间。

8. 发明授权

US07990785B2 Delay locked loop circuit of semiconductor device 有权
标题翻译：半导体器件的延迟锁定环路
公开(公告)号：US07990785B2
公开(公告)日：2011-08-02
申请号：US12262517
申请日：2008-10-31
申请人： Hee-Woong Song , Kun-Woo Park , Yong-Ju Kim , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee
发明人： Hee-Woong Song , Kun-Woo Park , Yong-Ju Kim , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee
IPC分类号： G11C7/00
CPC分类号： G11C29/02 , G11C7/22 , G11C7/222 , G11C29/023 , G11C29/028 , H03L7/0812 , H03L7/089 , H03L7/095
摘要： A semiconductor memory device includes a delay locked loop circuit that can control input/output timing of data according to a system clock of a high frequency. The semiconductor memory device includes a phase comparator configured to detect a phase difference between an internal clock and a reference clock to output a state signal having a pulse width corresponding to the detected phase difference, a phase adjuster configured to generate a digital code for determining a delay time corresponding to the state signal for locking a phase of the internal clock, a digital-to-analog converter configured to convert the digital code to an analog voltage, and a multiphase delay signal generator configured to delay the internal clock according to a bias voltage corresponding to the analog voltage to feed back the delayed internal clock as the internal clock and generate multiphase delay signals.
摘要翻译：半导体存储器件包括可以根据高频系统时钟控制数据的输入/输出定时的延迟锁定环电路。半导体存储装置包括：相位比较器，被配置为检测内部时钟和参考时钟之间的相位差，以输出具有与检测到的相位差相对应的脉冲宽度的状态信号;相位调整器，被配置为生成用于确定对应于用于锁定内部时钟的相位的状态信号的延迟时间，配置成将数字代码转换为模拟电压的数模转换器，以及被配置为根据偏置来延迟内部时钟的多相延迟信号发生器对应于模拟电压的电压反馈延迟的内部时钟作为内部时钟，并产生多相延迟信号。

9. 发明授权

US07868663B2 Receiver circuit for use in a semiconductor integrated circuit 失效
标题翻译：用于半导体集成电路的接收器电路
公开(公告)号：US07868663B2
公开(公告)日：2011-01-11
申请号：US12171214
申请日：2008-07-10
申请人： Ic-Su Oh , Kun-Woo Park , Yong-Ju Kim , Hee-Woong Song , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee
发明人： Ic-Su Oh , Kun-Woo Park , Yong-Ju Kim , Hee-Woong Song , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee
IPC分类号： G01R19/00 , G11C7/00 , H03F3/45
CPC分类号： H04L7/0337
摘要： A receiver circuit for sensing and transmitting input data in sync with a plurality of clock signals having mutually different phase sequentially enabled comprising a sense amplifier configured to receive, as offset voltages, first signals which can be obtained by amplifying the input data in sync with a first clock signal of the plurality of clock signals, being driven in sync with a second clock signal enabled subsequently to the first clock signal, and outputting second signals, and a discharging controller configured to control a discharging speed of the sense amplifier according to the offset voltages to control a driven speed of the sense amplifier.
摘要翻译：一种接收机电路，用于与具有相互不同相位的多个时钟信号同步地感测和发送输入数据，其顺序地使能，包括读出放大器，其被配置为接收作为偏移电压的第一信号，所述第一信号可以通过与所述多个时钟信号的第一时钟信号与与所述第一时钟信号之后使能的第二时钟信号同步地驱动，并输出第二信号;以及放电控制器，被配置为根据所述偏移来控制所述读出放大器的放电速度电压来控制读出放大器的驱动速度。

10. 发明授权

US07808841B2 Data output circuit for semiconductor memory apparatus 有权
标题翻译：半导体存储装置的数据输出电路
公开(公告)号：US07808841B2
公开(公告)日：2010-10-05
申请号：US12169568
申请日：2008-07-08
申请人： Hae-Rang Choi , Kun-Woo Park , Yong-Ju Kim , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Ji-Wang Lee
发明人： Hae-Rang Choi , Kun-Woo Park , Yong-Ju Kim , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Ji-Wang Lee
IPC分类号： G11C7/10 , G11C7/06 , G11C7/00
CPC分类号： G11C7/1051 , G11C7/1057 , G11C29/028 , G11C29/1201 , G11C29/50
摘要： A data output circuit for a semiconductor memory apparatus includes a driver control signal generating unit that has a plurality of control signal generating units, each of which generates a driver unit control signal in response to a test signal during a test, and generates the driver unit control signal according to whether or not a fuse is cut after the test is completed, a first driver that has a plurality of driver units, each of which is activated in response to the driver unit control signal to drive a first data signal as an input signal and to output the driven first data signal to an output node, a signal combining unit that generates a first driver control signal in response to the driver unit control signal and an enable signal, and a second driver that has a plurality of driver units, each of which is activated in response to the first driver control signal to drive a second data signal as an input signal and to output the driven second data signal to the output node, and the number of driver units being two or more times as much as the number of driver units in the first driver. A voltage level on the output node is the voltage level of an output signal.
摘要翻译：一种用于半导体存储装置的数据输出电路，包括具有多个控制信号生成单元的驱动器控制信号生成单元，每个控制信号生成单元响应于测试期间的测试信号生成驱动单元控制信号，并且生成驱动单元根据在测试完成之后是否切断熔丝的控制信号，具有多个驱动单元的第一驱动器，每个驱动器单元响应于驱动单元控制信号被激活以驱动第一数据信号作为输入信号并将驱动的第一数据信号输出到输出节点;响应于驱动单元控制信号和使能信号产生第一驱动器控制信号的信号组合单元，以及具有多个驱动器单元的第二驱动器，其中的每一个响应于第一驱动器控制信号被激活，以驱动第二数据信号作为输入信号，并将驱动的第二数据信号输出到输出节点;以及驱动器单元的数量是第一驱动器中的驱动器单元的数量的两倍或更多倍。输出节点上的电压电平是输出信号的电压电平。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式