专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08138583B2 Diode having reduced on-resistance and associated method of manufacture 有权
标题翻译：二极管具有降低的导通电阻和相关的制造方法
公开(公告)号：US08138583B2
公开(公告)日：2012-03-20
申请号：US11675658
申请日：2007-02-16
申请人： Saptharishi Sriram , Thomas J. Smith, Jr. , Helmut Hagleitner
发明人： Saptharishi Sriram , Thomas J. Smith, Jr. , Helmut Hagleitner
IPC分类号： H01L29/15
CPC分类号： H01L29/1608 , H01L23/291 , H01L23/31 , H01L29/0657 , H01L29/6606 , H01L29/6609 , H01L29/861 , H01L29/868 , H01L2924/0002 , H01L2924/00
摘要： A diode structure having a reduced on-resistance in the forward-biased condition includes semiconductor layers, preferably of silicon carbide. The anode and cathode of the device are located on the same side of the bottom semiconductor layer, providing lateral conduction across the diode body. The anode is positioned on a semiconductor mesa, and the sides of the mesa are covered with a nonconductive spacer extending from the anode to the bottom layer. An ohmic contact, preferably a metal silicide, covers the surface of the bottom layer between the spacer material and the cathode. The conductive path extends from anode to cathode through the body of the mesa and across the bottom semiconductor layer, including the ohmic contact. The method of forming the diode includes reacting layers of silicon and metal on the appropriate regions of the diode to form an ohmic contact of metal silicide.
摘要翻译：在正向偏置状态下具有降低的导通电阻的二极管结构包括优选为碳化硅的半导体层。器件的阳极和阴极位于底部半导体层的同一侧，提供横跨二极管体的横向导通。阳极定位在半导体台面上，并且台面的侧面被从阳极延伸到底层的非导电间隔物覆盖。欧姆接触，优选金属硅化物，覆盖在间隔物材料和阴极之间的底层的表面。导电路径从阳极延伸穿过台面的主体并穿过底部半导体层，包括欧姆接触。形成二极管的方法包括在二极管的适当区域上反应硅和金属层以形成金属硅化物的欧姆接触。

2. 发明授权

US07525122B2 Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides 有权
标题翻译：使用无氢溅射氮化物钝化宽带隙基半导体器件
公开(公告)号：US07525122B2
公开(公告)日：2009-04-28
申请号：US11169378
申请日：2005-06-29
申请人： Zoltan Ring , Helmut Hagleitner , Jason Patrick Henning , Andrew Mackenzie , Scott Allen , Scott Thomas Sheppard , Richard Peter Smith , Saptharishi Sriram , Allan Ward, III
发明人： Zoltan Ring , Helmut Hagleitner , Jason Patrick Henning , Andrew Mackenzie , Scott Allen , Scott Thomas Sheppard , Richard Peter Smith , Saptharishi Sriram , Allan Ward, III
IPC分类号： H01L29/15 , H01L31/0256
CPC分类号： H01L21/045 , H01L21/3145 , H01L21/318 , H01L21/3185 , H01L29/1608 , H01L29/2003 , H01L29/24
摘要： A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and the thermal oxidation layer; a first sputtered non-stoichiometric silicon nitride layer on the thermal oxidation layer for reducing parasitic capacitance and minimizing device trapping; a second sputtered non-stoichiometric silicon nitride layer on the first layer for positioning subsequent passivation layers further from the substrate without encapsulating the structure; a sputtered stoichiometric silicon nitride layer on the second sputtered layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers; and a chemical vapor deposited environmental barrier layer of stoichiometric silicon nitride for step coverage and crack prevention on the encapsulant layer.
摘要翻译：公开了钝化的半导体结构和相关方法。该结构包括碳化硅衬底或层; 在碳化硅衬底上的氧化层，用于降低碳化硅衬底和热氧化层之间的界面密度; 在热氧化层上的第一溅射的非化学计量的氮化硅层，用于减少寄生电容并最小化器件捕获; 在所述第一层上的第二溅射的非化学计量的氮化硅层，用于使所述衬底进一步从所述衬底定位以后的钝化层而不封装所述结构; 在第二溅射层上溅射化学计量的氮化硅层，用于封装该结构并增强钝化层的氢阻挡性能; 以及化学气相沉积的化学计量氮化硅的环境阻挡层，用于在封装层上进行步骤覆盖和防裂。

3. 发明申请

US20070001174A1 Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides 有权
标题翻译：使用无氢溅射氮化物钝化宽带隙基半导体器件
公开(公告)号：US20070001174A1
公开(公告)日：2007-01-04
申请号：US11169378
申请日：2005-06-29
申请人： Zoltan Ring , Helmut Hagleitner , Jason Henning , Andrew Mackenzie , Scott Allen , Scott Sheppard , Richard Smith , Saptharishi Sriram , Allan Ward
发明人： Zoltan Ring , Helmut Hagleitner , Jason Henning , Andrew Mackenzie , Scott Allen , Scott Sheppard , Richard Smith , Saptharishi Sriram , Allan Ward
IPC分类号： H01L29/15 , H01L31/0256
CPC分类号： H01L21/045 , H01L21/3145 , H01L21/318 , H01L21/3185 , H01L29/1608 , H01L29/2003 , H01L29/24
摘要： A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and the thermal oxidation layer; a first sputtered non-stoichiometric silicon nitride layer on the thermal oxidation layer for reducing parasitic capacitance and minimizing device trapping; a second sputtered non-stoichiometric silicon nitride layer on the first layer for positioning subsequent passivation layers further from the substrate without encapsulating the structure; a sputtered stoichiometric silicon nitride layer on the second sputtered layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers; and a chemical vapor deposited environmental barrier layer of stoichiometric silicon nitride for step coverage and crack prevention on the encapsulant layer.
摘要翻译：公开了钝化的半导体结构和相关方法。该结构包括碳化硅衬底或层; 在碳化硅衬底上的氧化层，用于降低碳化硅衬底和热氧化层之间的界面密度; 在热氧化层上的第一溅射的非化学计量的氮化硅层，用于减少寄生电容并最小化器件捕获; 在所述第一层上的第二溅射的非化学计量的氮化硅层，用于使所述衬底进一步从所述衬底定位以后的钝化层而不封装所述结构; 在第二溅射层上溅射化学计量的氮化硅层，用于封装该结构并增强钝化层的氢阻挡性能; 以及化学气相沉积的化学计量氮化硅的环境阻挡层，用于在封装层上进行步骤覆盖和防裂。

4. 发明申请

US20130234278A1 SCHOTTKY CONTACT 有权
标题翻译：肖特友联系人
公开(公告)号：US20130234278A1
公开(公告)日：2013-09-12
申请号：US13414286
申请日：2012-03-07
申请人： Helmut Hagleitner , Saptharishi Sriram
发明人： Helmut Hagleitner , Saptharishi Sriram
IPC分类号： H01L29/47 , H01L21/28
CPC分类号： H01L29/475 , H01L21/28581 , H01L29/2003 , H01L29/402 , H01L29/452 , H01L29/7786 , H01L29/872
摘要： The present disclosure relates to a Schottky contact for a semiconductor device. The semiconductor device has a body formed from one or more epitaxial layers, which reside over a substrate. The Schottky contact may include a Schottky layer, a first diffusion barrier layer, and a third layer. The Schottky layer is formed of a first metal and is provided over at least a portion of a first surface of the body. The first diffusion barrier layer is formed of a silicide of the first metal and is provided over the Schottky layer. The third layer is formed of a second metal and is provided over the first diffusion barrier layer. In one embodiment, the first metal is nickel, and as such, the silicide is nickel silicide. Various other layers may be provided between or above the Schottky layer, the first diffusion barrier layer, and the third layer.
摘要翻译：本公开涉及半导体器件的肖特基接触。半导体器件具有由位于衬底上的一个或多个外延层形成的主体。肖特基接触可以包括肖特基层，第一扩散阻挡层和第三层。肖特基层由第一金属形成并且设置在主体的第一表面的至少一部分上。第一扩散阻挡层由第一金属的硅化物形成，并且设置在肖特基层上。第三层由第二金属形成，并且设置在第一扩散阻挡层上。在一个实施例中，第一金属是镍，因此硅化物是硅化镍。可以在肖特基层，第一扩散阻挡层和第三层之间或之上提供各种其它层。

5. 发明授权

US07858460B2 Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides 有权
标题翻译：使用无氢溅射氮化物钝化宽带隙基半导体器件
公开(公告)号：US07858460B2
公开(公告)日：2010-12-28
申请号：US12404557
申请日：2009-03-16
申请人： Zoltan Ring , Helmut Hagleitner , Jason Patrick Henning , Andrew Mackenzie , Scott Allen , Scott Thomas Sheppard , Richard Peter Smith , Saptharishi Sriram , Allan Ward, III
发明人： Zoltan Ring , Helmut Hagleitner , Jason Patrick Henning , Andrew Mackenzie , Scott Allen , Scott Thomas Sheppard , Richard Peter Smith , Saptharishi Sriram , Allan Ward, III
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L21/045 , H01L21/3145 , H01L21/318 , H01L21/3185 , H01L29/1608 , H01L29/2003 , H01L29/24
摘要： A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and the thermal oxidation layer; a first sputtered non-stoichiometric silicon nitride layer on the thermal oxidation layer for reducing parasitic capacitance and minimizing device trapping; a second sputtered non-stoichiometric silicon nitride layer on the first layer for positioning subsequent passivation layers further from the substrate without encapsulating the structure; a sputtered stoichiometric silicon nitride layer on the second sputtered layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers; and a chemical vapor deposited environmental barrier layer of stoichiometric silicon nitride for step coverage and crack prevention on the encapsulant layer.
摘要翻译：公开了钝化的半导体结构和相关方法。该结构包括碳化硅衬底或层; 在碳化硅衬底上的氧化层，用于降低碳化硅衬底和热氧化层之间的界面密度; 在热氧化层上的第一溅射的非化学计量的氮化硅层，用于减少寄生电容并最小化器件捕获; 在所述第一层上的第二溅射的非化学计量的氮化硅层，用于使所述衬底进一步从所述衬底定位以后的钝化层而不封装所述结构; 在第二溅射层上溅射化学计量的氮化硅层，用于封装该结构并增强钝化层的氢阻挡性能; 以及化学气相沉积的化学计量氮化硅的环境阻挡层，用于在封装层上进行步骤覆盖和防裂。

6. 发明授权

US09640627B2 Schottky contact 有权
公开(公告)号：US09640627B2
公开(公告)日：2017-05-02
申请号：US13414286
申请日：2012-03-07
申请人： Helmut Hagleitner , Saptharishi Sriram
发明人： Helmut Hagleitner , Saptharishi Sriram
IPC分类号： H01L21/28 , H01L29/47 , H01L21/285 , H01L29/872 , H01L29/778 , H01L29/20 , H01L29/40 , H01L29/45
CPC分类号： H01L29/475 , H01L21/28581 , H01L29/2003 , H01L29/402 , H01L29/452 , H01L29/7786 , H01L29/872
摘要： The present disclosure relates to a Schottky contact for a semiconductor device. The semiconductor device has a body formed from one or more epitaxial layers, which reside over a substrate. The Schottky contact may include a Schottky layer, a first diffusion barrier layer, and a third layer. The Schottky layer is formed of a first metal and is provided over at least a portion of a first surface of the body. The first diffusion barrier layer is formed of a silicide of the first metal and is provided over the Schottky layer. The third layer is formed of a second metal and is provided over the first diffusion barrier layer. In one embodiment, the first metal is nickel, and as such, the silicide is nickel silicide. Various other layers may be provided between or above the Schottky layer, the first diffusion barrier layer, and the third layer.

7. 发明申请

US20090215280A1 Passivation of Wide Band-Gap Based Semiconductor Devices with Hydrogen-Free Sputtered Nitrides 有权
标题翻译：使用无氢溅射氮化物钝化宽带隙半导体器件
公开(公告)号：US20090215280A1
公开(公告)日：2009-08-27
申请号：US12404557
申请日：2009-03-16
申请人： Zoltan Ring , Helmut Hagleitner , Jason Patrick Henning , Andrew Mackenzie , Scott Allen , Scott Thomas Sheppard , Richard Peter Smith , Saptharishi Sriram , Allan Ward, III
发明人： Zoltan Ring , Helmut Hagleitner , Jason Patrick Henning , Andrew Mackenzie , Scott Allen , Scott Thomas Sheppard , Richard Peter Smith , Saptharishi Sriram , Allan Ward, III
IPC分类号： H01L21/04
CPC分类号： H01L21/045 , H01L21/3145 , H01L21/318 , H01L21/3185 , H01L29/1608 , H01L29/2003 , H01L29/24
摘要： A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and the thermal oxidation layer; a first sputtered non-stoichiometric silicon nitride layer on the thermal oxidation layer for reducing parasitic capacitance and minimizing device trapping; a second sputtered non-stoichiometric silicon nitride layer on the first layer for positioning subsequent passivation layers further from the substrate without encapsulating the structure; a sputtered stoichiometric silicon nitride layer on the second sputtered layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers; and a chemical vapor deposited environmental barrier layer of stoichiometric silicon nitride for step coverage and crack prevention on the encapsulant layer.
摘要翻译：公开了钝化的半导体结构和相关方法。该结构包括碳化硅衬底或层; 在碳化硅衬底上的氧化层，用于降低碳化硅衬底和热氧化层之间的界面密度; 在热氧化层上的第一溅射的非化学计量的氮化硅层，用于减少寄生电容并最小化器件捕获; 在所述第一层上的第二溅射的非化学计量的氮化硅层，用于使所述衬底进一步从所述衬底定位以后的钝化层而不封装所述结构; 在第二溅射层上溅射化学计量的氮化硅层，用于封装该结构并增强钝化层的氢阻挡性能; 以及化学气相沉积的化学计量氮化硅的环境阻挡层，用于在封装层上进行步骤覆盖和防裂。

8. 发明申请

US20080197360A1 Diode Having Reduced On-resistance and Associated Method of Manufacture 有权
标题翻译：二极管具有降低的导通电阻和相关的制造方法
公开(公告)号：US20080197360A1
公开(公告)日：2008-08-21
申请号：US11675658
申请日：2007-02-16
申请人： Saptharishi Sriram , Thomas J. Smith , Helmut Hagleitner
发明人： Saptharishi Sriram , Thomas J. Smith , Helmut Hagleitner
IPC分类号： H01L29/868 , H01L21/329 , H01L29/24
CPC分类号： H01L29/1608 , H01L23/291 , H01L23/31 , H01L29/0657 , H01L29/6606 , H01L29/6609 , H01L29/861 , H01L29/868 , H01L2924/0002 , H01L2924/00
摘要： A diode structure having a reduced on-resistance in the forward-biased condition includes semiconductor layers, preferably of silicon carbide. The anode and cathode of the device are located on the same side of the bottom semiconductor layer, providing lateral conduction across the diode body. The anode is positioned on a semiconductor mesa, and the sides of the mesa are covered with a nonconductive spacer extending from the anode to the bottom layer. An ohmic contact, preferably a metal silicide, covers the surface of the bottom layer between the spacer material and the cathode. The conductive path extends from anode to cathode through the body of the mesa and across the bottom semiconductor layer, including the ohmic contact. The method of forming the diode includes reacting layers of silicon and metal on the appropriate regions of the diode to form an ohmic contact of metal silicide.
摘要翻译：在正向偏置状态下具有降低的导通电阻的二极管结构包括优选为碳化硅的半导体层。器件的阳极和阴极位于底部半导体层的同一侧，提供横跨二极管体的横向导通。阳极定位在半导体台面上，并且台面的侧面被从阳极延伸到底层的非导电间隔物覆盖。欧姆接触，优选金属硅化物，覆盖在间隔物材料和阴极之间的底层的表面。导电路径从阳极延伸穿过台面的主体并穿过底部半导体层，包括欧姆接触。形成二极管的方法包括在二极管的适当区域上反应硅和金属层以形成金属硅化物的欧姆接触。

9. 发明授权

US09548206B2 Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and well-defined edge features 有权
标题翻译：具有改进的表面形态和良好限定的边缘特征的III族氮化物半导体器件的欧姆接触结构
公开(公告)号：US09548206B2
公开(公告)日：2017-01-17
申请号：US13182679
申请日：2011-07-14
申请人： Helmut Hagleitner , Jason Gurganus
发明人： Helmut Hagleitner , Jason Gurganus
IPC分类号： H01L29/45 , H01L21/285 , H01L29/66 , H01L29/778 , H01L29/20
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： Embodiments of an ohmic contact structure for a Group III nitride semiconductor device and methods of fabrication thereof are disclosed. In general, the ohmic contact structure has a root-mean-squared (RMS) surface roughness of less than 10 nanometers, and more preferably less than or equal to 7.5 nanometers, and more preferably less than or equal to 5 nanometers, and more preferably less than or equal to 2 nanometers, and even more preferably less than or equal to 1.5 nanometers.
摘要翻译：公开了用于III族氮化物半导体器件的欧姆接触结构的实施例及其制造方法。通常，欧姆接触结构的均方根（RMS）表面粗糙度小于10纳米，更优选小于或等于7.5纳米，更优选小于或等于5纳米，更优选地小于或等于2纳米，甚至更优选小于或等于1.5纳米。

10. 发明授权

US08907350B2 Semiconductor devices having improved adhesion and methods of fabricating the same 有权
标题翻译：具有改进的附着力的半导体器件及其制造方法
公开(公告)号：US08907350B2
公开(公告)日：2014-12-09
申请号：US12769307
申请日：2010-04-28
申请人： Van Mieczkowski , Helmut Hagleitner
发明人： Van Mieczkowski , Helmut Hagleitner
IPC分类号： H01L29/15 , H01L29/778 , H01L29/423 , H01L29/66 , H01L29/06 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/0649 , H01L29/2003 , H01L29/42316 , H01L29/66462
摘要： Wide bandgap semiconductor devices are fabricated by providing a wide bandgap semiconductor layer, providing a plurality of recesses in the wide bandgap semiconductor layer, and providing a metal gate contact in the plurality of recesses. A protective layer may be provided on the wide bandgap semiconductor layer, the protective layer having a first opening extending therethrough, a dielectric layer may be provided on the protective layer, the dielectric layer having a second opening extending therethrough that is narrower than the first opening, and a gate contact may be provided in the first and second openings. The metal gate contact may be provided to include a barrier metal layer in the plurality of recesses, and a current spreading layer on the barrier metal layer remote from the wide bandgap semiconductor layer. Related devices and fabrication methods are also discussed.
摘要翻译：宽带隙半导体器件通过提供宽带隙半导体层制造，在宽带隙半导体层中提供多个凹槽，并在多个凹槽中提供金属栅极接触。可以在宽带隙半导体层上设置保护层，保护层具有延伸穿过其的第一开口，电介质层可以设置在保护层上，电介质层具有延伸穿过的第二开口，该第二开口窄于第一开口并且可以在第一和第二开口中设置栅极接触。可以提供金属栅极接触以在多个凹部中包括阻挡金属层，以及在远离宽带隙半导体层的阻挡金属层上的电流扩散层。还讨论了相关设备和制造方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式