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    • 6. 发明授权
    • Delay circuit including first and second internal delay circuits and a selection switch
    • 延迟电路包括第一和第二内部延迟电路和选择开关
    • US08063675B2
    • 2011-11-22
    • US12686703
    • 2010-01-13
    • Atsushi IgarashiMasakazu Sugiura
    • Atsushi IgarashiMasakazu Sugiura
    • H03L7/00
    • H03K5/06H03K5/133H03K2005/0013H03K2005/00136
    • Provided is a delay circuit that has a delay time period independent of a power supply voltage and has the equal delay time period between a case of a change in input signal from Low to High and a case of a change in input signal from High to Low. The delay time period is determined as a time period necessary for a voltage of a capacitor (17) (internal voltage (Va)) to increase from a ground voltage (VSS) to a voltage equal to or higher than an inverting threshold voltage of a constant current inverter (19) (threshold voltage (Vtn) of an NMOS transistor (16)). Therefore, the delay time period is determined with reference to the ground voltage (VSS). Note that the same holds true for an internal delay circuit (20). If the input signal (Vin) becomes High, the delay circuit utilizes the delay time period caused by an internal delay circuit (10). On the other hand, if the input signal (Vin) becomes Low, the delay circuit utilizes the delay time period caused by the internal delay circuit (20). Those internal delay circuit (10) and internal delay circuit (20) are identical with each other.
    • 提供了延迟电路,其具有与电源电压无关的延迟时间,并且在从低电平变为高电平的输入信号变化的情况和输入信号从高变化到低的情况之间具有相等的延迟时间段 。 延迟时间被确定为电容器(17)的电压(内部电压(Va))从接地电压(VSS)增加到等于或高于其的反相阈值电压的电压所需的时间段 恒流逆变器(19)(NMOS晶体管(16)的阈值电压(Vtn))。 因此,参考接地电压(VSS)确定延迟时间。 注意,对于内部延迟电路(20)也是如此。 如果输入信号(Vin)变为高电平,则延迟电路利用由内部延迟电路(10)引起的延迟时间。 另一方面,如果输入信号(Vin)为低电平,则延迟电路利用由内部延迟电路(20)引起的延迟时间。 那些内部延迟电路(10)和内部延迟电路(20)彼此相同。
    • 8. 发明授权
    • Temperature detection system
    • 温度检测系统
    • US08449179B2
    • 2013-05-28
    • US12974956
    • 2010-12-21
    • Atsushi Igarashi
    • Atsushi Igarashi
    • G01K7/01
    • G01K3/005G01K1/026
    • Provided is a temperature detection system which is low in cost. The temperature detection system includes a plurality of temperature detection ICs (10) for detecting an abnormal temperature and a resistor (20). Each of the plurality of temperature detection ICs (10) includes a reference voltage terminal connected to an output terminal of one of the plurality of temperature detection ICs (10) located at a preceding stage. The resistor (20) is provided between an output terminal of one of the plurality of temperature detection ICs (10) located at the final stage and a ground terminal.
    • 提供了一种成本低的温度检测系统。 温度检测系统包括用于检测异常温度的多个温度检测IC(10)和电阻器(20)。 多个温度检测IC(10)中的每一个包括连接到位于前一级的多个温度检测IC(10)之一的输出端的参考电压端子。 电阻器(20)设置在位于最后级的多个温度检测IC(10)之一的输出端子与接地端子之间。
    • 9. 发明申请
    • OVERHEAT PROTECTION CIRCUIT AND POWER SUPPLY INTEGRATED CIRCUIT
    • 超声波保护电路和电源集成电路
    • US20100321845A1
    • 2010-12-23
    • US12790070
    • 2010-05-28
    • Takashi ImuraTakao NakashimoMasakazu SugiuraAtsushi IgarashiMasahiro Mitani
    • Takashi ImuraTakao NakashimoMasakazu SugiuraAtsushi IgarashiMasahiro Mitani
    • H02H5/04
    • G05F1/569
    • Provided is a power supply integrated circuit including an overheat protection circuit with high detection accuracy. The overheat protection circuit includes: a current generation circuit including: a first metal oxide semiconductor (MOS) transistor including a gate terminal and a drain terminal that are connected to each other, the first MOS transistor operating in a weak inversion region; a second MOS transistor including a gate terminal connected to the gate terminal of the first MOS transistor, the second MOS transistor having the same conductivity type as the first MOS transistor and operating in a weak inversion region; and a first resistive element connected to a source terminal of the second MOS transistor; and a comparator for comparing a reference voltage having positive temperature characteristics and a temperature voltage having negative temperature characteristics, which are obtained based on a current generated by the current generation circuit.
    • 提供了一种具有高检测精度的过热保护电路的电源集成电路。 过热保护电路包括:电流产生电路,包括:第一金属氧化物半导体(MOS)晶体管,其包括彼此连接的栅极端子和漏极端子,所述第一MOS晶体管在弱反转区域中工作; 第二MOS晶体管,包括连接到第一MOS晶体管的栅极端子的栅极端子,第二MOS晶体管具有与第一MOS晶体管相同的导电类型并且在弱反转区域中操作; 以及连接到所述第二MOS晶体管的源极端子的第一电阻元件; 以及比较器,用于比较具有正温度特性的参考电压和具有负温度特性的温度电压,其基于由电流产生电路产生的电流获得。
    • 10. 发明申请
    • DETECTION CIRCUIT AND SENSOR DEVICE
    • 检测电路和传感器装置
    • US20100180059A1
    • 2010-07-15
    • US12686674
    • 2010-01-13
    • Masakazu SugiuraAtsushi Igarashi
    • Masakazu SugiuraAtsushi Igarashi
    • G06F13/24
    • G06F13/24G06F1/24Y02D10/14
    • Provided is a detection circuit for monitoring a power supply voltage with a circuit configuration in which power consumption is reduced, and a sensor device including the detection circuit. A detection circuit (100) detects an input signal input thereto to output an output signal. An interrupt condition generating circuit (10a) directly detects a power supply voltage (VDD) supplied thereto from a power supply, and outputs an interrupt signal until the power supply voltage makes a transition to a predetermined voltage range. An interrupt condition reception circuit outputs, as an output signal, a given voltage without allowing an input signal (Vtemp) to be output until an interrupt caused by the interrupt signal is released, and outputs, as an output signal, the input signal by allowing the input signal to be output when the interrupt caused by the interrupt signal is released.
    • 提供了一种用于通过降低功耗的电路配置来监测电源电压的检测电路,以及包括检测电路的传感器装置。 检测电路(100)检测输入的输入信号,输出输出信号。 中断条件生成电路(10a)直接检测从电源供给的电源电压(VDD),并输出中断信号,直到电源电压转换到规定的电压范围为止。 中断条件接收电路作为输出信号输出给定电压,而不允许输出信号(Vtemp)被输出,直到由中断信号引起的中断被解除为止,并通过允许输入信号作为输出信号输出 当中断信号中断引起的输出信号被释放。