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    • 5. 发明授权
    • Semiconductor device with transistors that convert a voltage difference into a drain current difference
    • 具有将电压差转换为漏极电流差的晶体管的半导体器件
    • US06713815B2
    • 2004-03-30
    • US10147415
    • 2002-05-16
    • Fumiyasu UtsunomiyaHirokazu Yoshizawa
    • Fumiyasu UtsunomiyaHirokazu Yoshizawa
    • H01L2362
    • H01L27/1203H01L2924/0002H01L2924/00
    • A semiconductor device is provided, which includes a pair of differential transistors that convert a voltage difference between a first input terminal and a second input terminal into a drain current difference between a first transistor and a second transistor and in which a voltage range of the first input terminal or the second input terminal is wide. A SOI structure MOSFET is used as each of the pair of differential transistors. The MOSFET includes a general MOSFET structure including a source region, a drain region, a well region between both the regions, a gate oxide film on an upper surface of the well region, and a gate electrode on the gate oxide film, and further includes a first conductivity type substrate region under the source region, the drain region and the well region through a buried oxide film. In the MOSFET, the first conductivity type substrate region of the first transistor is the first input terminal, and the first conductivity type substrate region of the second transistor is the first input terminal.
    • 提供了一种半导体器件,其包括将第一输入端和第二输入端之间的电压差转换为第一晶体管和第二晶体管之间的漏极电流差的一对差分晶体管,其中第一 输入端或第二输入端宽。 SOI结构MOSFET用作这对差分晶体管中的每一个。 MOSFET包括通常的MOSFET结构,其包括源极区域,漏极区域,两个区域之间的阱区域,阱区域的上表面上的栅极氧化膜以及栅极氧化物膜上的栅电极,并且还包括 在源极区域之下的第一导电类型的衬底区域,通过掩埋氧化物膜的漏极区域和阱区域。 在MOSFET中,第一晶体管的第一导电型衬底区域是第一输入端子,第二晶体管的第一导电类型衬底区域是第一输入端子。
    • 9. 发明授权
    • AD converter circuit
    • AD转换电路
    • US06437722B1
    • 2002-08-20
    • US09698686
    • 2000-10-27
    • Hirokazu Yoshizawa
    • Hirokazu Yoshizawa
    • H03M136
    • H03M1/0612H03M1/168
    • In a pipeline A/D converter circuit, the time at which outputs of MDACs of the A/D converter circuit change is shifted at respective stages, so that a cumulative error is avoided. In a resistance ladder circuit for supplying reference voltages to sub-A/D converter circuits of the pipeline A/D converter circuit, main resistors and auxiliary resistors are alternately connected in series to prepare the reference voltages, and the reference voltage supplied to the first stage MDAC is made different from the reference voltage supplied to the second and subsequent stage MDACs. In an embodiment, the auxiliary resistors have a resistance value of no more than one-half that of the main resistors to provide the offset.
    • 在流水线A / D转换器电路中,A / D转换器电路的MDAC的输出变化的时间在各个阶段变化,从而避免了累积误差。 在用于向管线A / D转换电路的A / D转换电路供给基准电压的电阻梯形电路中,主电阻和辅助电阻交替地串联连接以准备参考电压,并且提供给第一 使得MDAC与提供给第二级和后一级MDAC的参考电压不同。 在一个实施例中,辅助电阻的电阻值不超过主电阻的一半,以提供偏移。