专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110092016A1 METHOD OF TREATING SEMICONDUCTOR ELEMENT 有权
标题翻译：处理半导体元件的方法
公开(公告)号：US20110092016A1
公开(公告)日：2011-04-21
申请号：US12865032
申请日：2009-03-02
申请人： Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
发明人： Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
IPC分类号： H01L21/26 , H01L21/34
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78633
摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.
摘要翻译：在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。半导体中间隙状态的面密度为1013cm-2eV-1或更小。带隙可以是2eV或更大。半导体可以包括选自In，Ga，Zn和Sn中的至少一种。半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

2. 发明申请

US20100194450A1 THIN-FILM TRANSISTOR CIRCUIT, DRIVING METHOD THEREOF, AND LIGHT-EMITTING DISPLAY APPARATUS 审中-公开
标题翻译：薄膜晶体管电路，其驱动方法和发光显示装置
公开(公告)号：US20100194450A1
公开(公告)日：2010-08-05
申请号：US12679682
申请日：2008-11-11
申请人： Hisae Shimizu , Ryo Hayashi , Katsumi Abe
发明人： Hisae Shimizu , Ryo Hayashi , Katsumi Abe
IPC分类号： H03K3/00 , H01L29/786 , H01L33/00
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2320/0233 , H01L27/1225 , H01L29/7869
摘要： In a light-emitting display apparatus including a plurality of pixels each including a light-emitting element and a driving circuit of the light-emitting element, and the driving circuit includes a plurality of thin-film transistors connected in parallel, a threshold voltage of the thin-film transistor reversibly changes according to a voltage applied between a gate and a source or between the gate and a drain of each of the thin-film transistors, by selecting and switching the plurality of thin-film transistors TFT11 to TFT13, the threshold voltage of the thin-film transistors for supplying a current to the light-emitting element is held within a predetermined range.
摘要翻译：在包括发光元件和发光元件的驱动电路的多个像素的发光显示装置中，驱动电路包括并联连接的多个薄膜晶体管，阈值电压薄膜晶体管通过选择并切换多个薄膜晶体管TFT11至TFT13，根据施加在栅极和源极之间或每个薄膜晶体管的栅极和漏极之间的电压而可逆地改变，用于向发光元件供给电流的薄膜晶体管的阈值电压保持在预定范围内。

3. 发明授权

US09373724B2 Method of driving transistor and device including transistor driven by the method 有权
标题翻译：驱动晶体管和器件的方法包括由该方法驱动的晶体管
公开(公告)号：US09373724B2
公开(公告)日：2016-06-21
申请号：US13005890
申请日：2011-01-13
申请人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
发明人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
IPC分类号： H01L29/04 , H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78606 , H01L29/78633
摘要： Disclosed is a method of driving a transistor including a semiconductor layer, a first insulating layer, a second insulating layer, a first conductive layer, and a second conductive layer such that the semiconductor layer is disposed between the first and second insulating layers, one surface of the first insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the first conductive layer, one surface of the second insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the second conductive layer. The method includes applying a voltage VBG that satisfies the relation of VBG≦VON1×C1/(C1+C2) to the second conductive layer.
摘要翻译：公开了一种驱动包括半导体层，第一绝缘层，第二绝缘层，第一导电层和第二导电层的晶体管的方法，使得半导体层设置在第一和第二绝缘层之间，一个表面与第一导电层接触的与第一导电层接触的与第一绝缘层相反的第一绝缘层的第一绝缘层与第二导电层接触的第二绝缘层与与半导体层接触的另一表面相对的一个表面。该方法包括将第二导电层施加满足VBG＆lt; N1E，VON1×C1 /（C1 + C2）的关系的电压VBG。

4. 发明申请

US20110175674A1 METHOD OF DRIVING TRANSISTOR AND DEVICE INCLUDING TRANSISTOR DRIVEN BY THE METHOD 有权
标题翻译：驱动晶体管的方法和包括通过该方法驱动的晶体管的器件
公开(公告)号：US20110175674A1
公开(公告)日：2011-07-21
申请号：US13005890
申请日：2011-01-13
申请人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
发明人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
IPC分类号： G05F1/10 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78606 , H01L29/78633
摘要： Disclosed is a method of driving a transistor including a semiconductor layer, a first insulating layer, a second insulating layer, a first conductive layer, and a second conductive layer such that the semiconductor layer is disposed between the first and second insulating layers, one surface of the first insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the first conductive layer, one surface of the second insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the second conductive layer. The method includes applying a voltage VBG that satisfies the relation of VBG≦VON1×C1/(C1+C2) to the second conductive layer.
摘要翻译：公开了一种驱动包括半导体层，第一绝缘层，第二绝缘层，第一导电层和第二导电层的晶体管的方法，使得半导体层设置在第一和第二绝缘层之间，一个表面与第一导电层接触的与第一导电层接触的与第一绝缘层相反的第一绝缘层的第一绝缘层与第二导电层接触的第二绝缘层与与半导体层接触的另一表面相对的一个表面。该方法包括将第二导电层施加满足VBG＆lt; N1E，VON1×C1 /（C1 + C2）的关系的电压VBG。

5. 发明授权

US08654114B2 Thin film transistor circuit, light emitting display apparatus, and driving method thereof 失效
标题翻译：薄膜晶体管电路，发光显示装置及其驱动方法
公开(公告)号：US08654114B2
公开(公告)日：2014-02-18
申请号：US12667827
申请日：2008-07-29
申请人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
发明人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
IPC分类号： G09G5/00
CPC分类号： G09G3/3258 , G09G3/3233 , G09G2300/0417 , G09G2300/0842 , G09G2320/0233 , G09G2320/043
摘要： In order to suppress an influence of an electrical stress on a TFT characteristic in use of a TFT, a light emitting display apparatus according to the present invention comprises organic EL devices and driving circuits for driving the organic EL devices. The driving circuit includes plural pixels each having a thin film transistor of which a threshold voltage reversibly changes due to the electrical stress applied between a gate terminal and a source terminal, and a voltage applying unit which sets gate potential of the thin film transistor higher than source potential. The voltage applying unit applies the electrical stress between the gate terminal and the source terminal at a time when the thin film transistor is not driven, so as to drive the thin film transistor in a region that the threshold voltage is saturated to the electrical stress.
摘要翻译：为了抑制电应力对使用TFT的TFT特性的影响，根据本发明的发光显示装置包括有机EL器件和用于驱动有机EL器件的驱动电路。驱动电路包括多个像素，每个像素具有薄膜晶体管，其阈值电压由于在栅极端子和源极端子之间施加的电应力而可逆地改变;以及电压施加单元，其将薄膜晶体管的栅极电位设置为高于源潜力。电压施加单元在薄膜晶体管未被驱动时在栅极端子和源极端子之间施加电应力，以便在阈值电压饱和到电应力的区域中驱动薄膜晶体管。

6. 发明授权

US08084331B2 Method of treating semiconductor element 有权
标题翻译：半导体元件的处理方法
公开(公告)号：US08084331B2
公开(公告)日：2011-12-27
申请号：US12865032
申请日：2009-03-02
申请人： Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
发明人： Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
IPC分类号： H01L21/331
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78633
摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.
摘要翻译：在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。半导体中间隙状态的面密度为1013cm-2eV-1或更小。带隙可以是2eV或更大。半导体可以包括选自In，Ga，Zn和Sn中的至少一种。半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

7. 发明申请

US20110001747A1 THIN FILM TRANSISTOR CIRCUIT, LIGHT EMITTING DISPLAY APPARATUS, AND DRIVING METHOD THEREOF 失效
标题翻译：薄膜晶体管电路，发光显示装置及其驱动方法
公开(公告)号：US20110001747A1
公开(公告)日：2011-01-06
申请号：US12667827
申请日：2008-07-29
申请人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
发明人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
IPC分类号： G09G5/00 , H03B1/00
CPC分类号： G09G3/3258 , G09G3/3233 , G09G2300/0417 , G09G2300/0842 , G09G2320/0233 , G09G2320/043
摘要： In order to suppress an influence of an electrical stress on a TFT characteristic in use of a TFT, a light emitting display apparatus according to the present invention comprises organic EL devices and driving circuits for driving the organic EL devices. The driving circuit includes plural pixels each having a thin film transistor of which a threshold voltage reversibly changes due to the electrical stress applied between a gate terminal and a source terminal, and a voltage applying unit which sets gate potential of the thin film transistor higher than source potential. The voltage applying unit applies the electrical stress between the gate terminal and the source terminal at a time when the thin film transistor is not driven, so as to drive the thin film transistor in a region that the threshold voltage is saturated to the electrical stress.
摘要翻译：为了抑制电应力对使用TFT的TFT特性的影响，根据本发明的发光显示装置包括有机EL器件和用于驱动有机EL器件的驱动电路。驱动电路包括多个像素，每个像素具有薄膜晶体管，其阈值电压由于在栅极端子和源极端子之间施加的电应力而可逆地改变;以及电压施加单元，其将薄膜晶体管的栅极电位设置为高于源潜力。电压施加单元在薄膜晶体管未被驱动时在栅极端子和源极端子之间施加电应力，以便在阈值电压饱和到电应力的区域中驱动薄膜晶体管。

8. 发明申请

US20090072232A1 Thin-Film Transistor and Display Device using Oxide Semiconductor 有权
标题翻译：使用氧化物半导体的薄膜晶体管和显示装置
公开(公告)号：US20090072232A1
公开(公告)日：2009-03-19
申请号：US12281783
申请日：2007-02-23
申请人： Ryo Hayashi , Katsumi Abe , Masafumi Sano
发明人： Ryo Hayashi , Katsumi Abe , Masafumi Sano
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/28202 , H01L29/4908 , H01L29/518 , H01L29/66969
摘要： The thin-film transistor of the present invention has at least a semiconductor layer including: on a substrate, a source electrode, a drain electrode, and a channel region; a gate insulating film; and a gate electrode, wherein the semiconductor layer is an oxide semiconductor layer, and wherein the gate insulating film is amorphous silicon including at least O and N, and the gate insulating film has a distribution of an oxygen concentration in a thickness direction so that the oxygen concentration is high in the side of an interface with an oxide semiconductor layer and the oxygen concentration decreases toward the side of the gate electrode.
摘要翻译：本发明的薄膜晶体管至少具有半导体层，该半导体层包括：基板，源电极，漏电极和沟道区; 栅极绝缘膜; 以及栅电极，其中所述半导体层是氧化物半导体层，并且其中所述栅极绝缘膜是至少包括至少O和N的非晶硅，并且所述栅极绝缘膜具有在厚度方向上的氧浓度的分布，使得在与氧化物半导体层的界面侧的氧浓度高，并且氧浓度朝向栅电极侧减小。

9. 发明授权

US09153703B2 Thin-film transistor and method of manufacturing same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US09153703B2
公开(公告)日：2015-10-06
申请号：US12527622
申请日：2008-02-08
申请人： Nobuyuki Kaji , Ryo Hayashi , Hisato Yabuta , Katsumi Abe
发明人： Nobuyuki Kaji , Ryo Hayashi , Hisato Yabuta , Katsumi Abe
IPC分类号： H01L21/336 , H01L29/786 , H01L29/10
CPC分类号： H01L29/78696 , H01L29/105 , H01L29/7869
摘要： There is provided a thin-film transistor including at least a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode, a drain electrode and a protective layer, wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga and Zn, the gate electrode-side carrier density of the oxide semiconductor layer is higher than the protective layer-side carrier density thereof, and the film thickness of the oxide semiconductor layer is 30 nm±15 nm.
摘要翻译：提供了至少包括衬底，栅电极，栅极绝缘层，氧化物半导体层，源电极，漏电极和保护层的薄膜晶体管，其中氧化物半导体层是含有元素In，Ga和Zn中的至少一种，氧化物半导体层的栅电极侧载流子密度高于其保护层侧载流子密度，氧化物半导体层的膜厚为30nm±15 nm。

10. 发明申请

US20100053041A1 PIXEL CIRCUIT, LIGHT EMITTING DISPLAY DEVICE AND DRIVING METHOD THEREOF 有权
标题翻译：像素电路，发光显示装置及其驱动方法
公开(公告)号：US20100053041A1
公开(公告)日：2010-03-04
申请号：US12548796
申请日：2009-08-27
申请人： Katsumi Abe , Kenji Takahashi , Ryo Hayashi , Hideya Kumomi
发明人： Katsumi Abe , Kenji Takahashi , Ryo Hayashi , Hideya Kumomi
IPC分类号： G09G3/30 , H04N5/222
CPC分类号： G09G3/325 , G09G2300/0426 , G09G2300/0439 , G09G2300/0814 , G09G2300/0852 , G09G2310/0251 , G09G2310/0262 , G09G2320/0223
摘要： A pixel circuit including at least a light emitting element, and a thin film transistor that supplies to the light emitting element a first current controlling a gray scale according to luminance-current characteristics of the light emitting element, wherein the thin film transistor has a back gate electrode, at least a driving period in which the thin film transistor supplies the first current to the light emitting element, and a writing period in which a second current is written to the thin film transistor before the driving period in order to pass the first current to the thin film transistor during the driving period are included, and by changing voltages which are applied to the back gate electrode in the driving period and the writing period, current capability to a gate voltage of the thin film transistor is made to differ.
摘要翻译：至少包括发光元件的像素电路和薄膜晶体管，其向发光元件提供根据发光元件的亮度 - 电流特性来控制灰度的第一电流，其中所述薄膜晶体管具有背面至少一个驱动周期，其中薄膜晶体管将第一电流提供给发光元件;以及写入周期，其中第二电流在驱动周期之前被写入薄膜晶体管，以便通过第一包括在驱动周期期间到薄膜晶体管的电流，并且通过改变在驱动周期和写入周期中施加到背栅电极的电压，使薄膜晶体管的栅极电压的电流能力不同。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式