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    • 2. 发明授权
    • Low voltage bandgap reference circuit
    • 低电压带隙基准电路
    • US06426669B1
    • 2002-07-30
    • US09640897
    • 2000-08-18
    • Jay FriedmanIon E. Opris
    • Jay FriedmanIon E. Opris
    • G05F1100
    • G05F3/30
    • In a bandgap voltage reference circuit in accordance with the present invention, the different-sized emitters of the two bipolar devices of a &Dgr;VBE stage return to ground (or other bias voltage) through separate resistors. The VBE term of the reference device is supplied by a VBE current source through a third resistor. The proportional-to-absolute-temperature (PTAT) term of the reference occurs as the difference of base-emitter voltages &Dgr;VBE between the larger and smaller emitters. An output voltage Vout multiplier resistor feeds to the larger emitter through an inverting amplifier. In one embodiment of the invention, the output voltage Vout trim at one temperature is obtained by trimming the base-emitter resistor of the “small emitter” device to compensate for the VBE process variation.
    • 在根据本发明的带隙电压参考电路中,DELTAVBE级的两个双极性器件的不同大小的发射极通过单独的电阻返回到地(或其他偏置电压)。 参考装置的VBE项由VBE电流源通过第三电阻提供。 参考的比例绝对温度(PTAT)项出现在较大和较小发射极之间的基极 - 发射极电压差ΔTATABE之间。 输出电压Vout乘法器电阻通过反相放大器馈送到较大的发射极。 在本发明的一个实施例中,通过微调“小发射极”器件的基极 - 发射极电阻来补偿VBE过程变化,从而获得在一个温度下的输出电压Vout微调。
    • 3. 发明授权
    • Low-voltage bandgap reference circuit
    • 低压带隙基准电路
    • US06407622B1
    • 2002-06-18
    • US09804779
    • 2001-03-13
    • Ion E. Opris
    • Ion E. Opris
    • G05F110
    • G05F3/30
    • A low-voltage reference circuit is provided wherein (i) the output voltage can be set to be a fraction of the silicon bandgap voltage of 1.206 volts, or on the order of 0.9 volts, (ii) the output voltage can have a zero thermal coefficient (TC), and (iii) the operating supply voltage Vcc can be less than 1.5 volts, or on the order of 1.1 volts. In one embodiment, the reference circuit modifies a conventional Brokaw bandgap circuit to lower both the required Vcc level and the output voltage by a constant offset. Referring to FIG. 3, the modification includes adding bipolar transistor (Q6), an opamp (A3) and resistors (R5, R6 and R7). In another embodiment, the reference circuit modifies a conventional circuit with PNP transistors connected to the substrate, referring to FIG. 4, by adding current source I6, NMOS transistor M3, opamp A4 and resistors R8-R10. A further embodiment modifies FIG. 4, referring to FIG. 5, by omitting the current source I6, and moving the location of resistor R4.
    • 提供了一种低电压参考电路,其中(i)输出电压可以被设置为1.206伏特的硅带隙电压的一部分,或大约为0.9伏,(ii)输出电压可以具有零热 系数(TC),和(iii)工作电源电压Vcc可以小于1.5伏,或者大约1.1伏。 在一个实施例中,参考电路修改常规的Brokaw带隙电路,以将所需的Vcc电平和输出电压降低一个恒定的偏移。 参考图 如图3所示,修改包括添加双极晶体管(Q6),运算放大器(A3)和电阻器(R5,R6和R7)。 在另一个实施例中,参考电路通过连接到衬底的PNP晶体来修改常规电路。 如图4所示,通过添加电流源I6,NMOS晶体管M3,运算放大器A4和电阻器R8-R10。 另一实施例修改图。 参照图4。 如图5所示,省略电流源I6,并移动电阻R4的位置。
    • 8. 发明授权
    • Trans-capacitance amplifier with picoAmperes input biasing and large output swing
    • 具有picoAmperes输入偏置和大输出摆幅的跨电容放大器
    • US08928409B1
    • 2015-01-06
    • US13940261
    • 2013-07-12
    • Ion E. Opris
    • Ion E. Opris
    • H03F3/45
    • H03F3/45183H03F3/45475H03F3/45946H03F2200/153H03F2203/45114H03F2203/45294H03F2203/45408H03F2203/45512H03F2203/45521H03F2203/45674
    • According to some embodiments, a trans-capacitance amplifier is exhibiting an input current of the biasing in the range of picoAmperes while allowing large output swings. The trans-capacitance amplifier comprises an operational amplifier, a feedback capacitor, circuitry to DC bias and to AC ground the non-inverting input of the operational amplifier, and circuitry to DC bias the inverting input of the operational amplifier. According to some embodiments, the circuitry to bias the inverting input comprises a cascade of degenerated differential pairs. The first transistor of the first pair and the second transistor of the last pair have an active load. The cascade of differential pairs and the active load create a trans-conductance amplifier with a very low equivalent trans-conductance. According to some embodiments, the same invention applies to a differential trans-capacitance amplifier.
    • 根据一些实施例,跨电容放大器在picoAmperes的范围内呈现偏置的输入电流,同时允许大的输出摆幅。 跨电容放大器包括运算放大器,反馈电容器,DC偏置电路和运算放大器的非反相输入端的AC接地,以及用于对运算放大器的反相输入进行DC偏置的电路。 根据一些实施例,偏置反相输入的电路包括退化差分对的级联。 第一对的第一晶体管和最后一对的第二晶体管具有有功负载。 差分对的级联和有源负载产生具有非常低的等效反电导的跨导放大器。 根据一些实施例,本发明适用于差分跨电容放大器。