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1. 发明授权

US08405751B2 Image sensor pixel structure employing a shared floating diffusion 有权
标题翻译：采用共享浮动扩散的图像传感器像素结构
公开(公告)号：US08405751B2
公开(公告)日：2013-03-26
申请号：US12534427
申请日：2009-08-03
申请人： Jason D. Hibbeler , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel
发明人： Jason D. Hibbeler , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel
IPC分类号： H04N5/335
CPC分类号： H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/37457
摘要： A pixel structure for an image sensor includes a semiconductor material portion having a coplanar and contiguous semiconductor surface and including four photodiodes, four channel regions, and a common floating diffusion region. Each of the four channel regions is directly adjoined to one of the four photodiodes and the common floating diffusion region. The four photodiodes are located within four different quadrants as defined employing a vertical line passing through a point within the common floating diffusion region as a center axis. The common floating diffusion region, a reset gate transistor, a source follower transistor, and a row select transistor are located within four different quadrants as defined employing a vertical line passing through a point within one of the photodiodes as an axis.
摘要翻译：图像传感器的像素结构包括具有共面且相邻的半导体表面的半导体材料部分，包括四个光电二极管，四个沟道区域和公共的浮动扩散区域。四个通道区域中的每一个直接邻接四个光电二极管和公共浮动扩散区域中的一个。四个光电二极管位于四个不同的象限内，如使用通过公共浮动扩散区域内的点作为中心轴的垂直线所限定的。公共浮动扩散区域，复位栅极晶体管，源极跟随器晶体管和行选择晶体管位于四个不同的象限内，如使用通过一个光电二极管内的点作为轴的垂直线所限定的。

2. 发明申请

US20110025892A1 IMAGE SENSOR PIXEL STRUCTURE EMPLOYING A SHARED FLOATING DIFFUSION 有权
标题翻译：图像传感器像素结构采用共享浮动扩展
公开(公告)号：US20110025892A1
公开(公告)日：2011-02-03
申请号：US12534427
申请日：2009-08-03
申请人： Jason D. Hibbeler , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel
发明人： Jason D. Hibbeler , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel
IPC分类号： H04N5/335 , H01L31/112 , G06F17/50
CPC分类号： H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/37457
摘要： A pixel structure for an image sensor includes a semiconductor material portion having a coplanar and contiguous semiconductor surface and including four photodiodes, four channel regions, and a common floating diffusion region. Each of the four channel regions is directly adjoined to one of the four photodiodes and the common floating diffusion region. The four photodiodes are located within four different quadrants as defined employing a vertical line passing through a point within the common floating diffusion region as a center axis. The common floating diffusion region, a reset gate transistor, a source follower transistor, and a row select transistor are located within four different quadrants as defined employing a vertical line passing through a point within one of the photodiodes as an axis.
摘要翻译：图像传感器的像素结构包括具有共面且相邻的半导体表面的半导体材料部分，包括四个光电二极管，四个沟道区域和公共的浮动扩散区域。四个通道区域中的每一个直接邻接四个光电二极管和公共浮动扩散区域中的一个。四个光电二极管位于四个不同的象限内，如使用通过公共浮动扩散区域内的点作为中心轴的垂直线所限定的。公共浮动扩散区域，复位栅极晶体管，源极跟随器晶体管和行选择晶体管位于四个不同的象限内，如使用通过一个光电二极管内的点作为轴的垂直线所限定的。

3. 发明授权

US07893468B2 Optical sensor including stacked photodiodes 有权
标题翻译：光学传感器包括堆叠的光电二极管
公开(公告)号：US07893468B2
公开(公告)日：2011-02-22
申请号：US12129716
申请日：2008-05-30
申请人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
发明人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
IPC分类号： H01L29/72
CPC分类号： H01L27/14647 , H01L27/14632 , H01L27/14641 , H01L27/14687
摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器包括在第一半导体衬底中形成包括第一半导体材料的第一感光二极管。在第二半导体衬底中形成包括具有与第一半导体材料不同的光检测波长范围的第二半导体材料的第二光敏二极管。用于保持和检测包括CMOS图像传感器的感测电路的电荷的半导体器件也可以形成在第二半导体衬底中。第一半导体衬底和第二半导体衬底被接合，使得第一感光二极管位于第二感光二极管的下方。第一和第二光敏二极管的垂直堆叠检测第一和第二半导体材料的组合检测波长范围内的光。感测装置可以在第一和第二光敏二极管之间共享。

4. 发明授权

US07883916B2 Optical sensor including stacked photosensitive diodes 有权
标题翻译：光学传感器包括堆叠感光二极管
公开(公告)号：US07883916B2
公开(公告)日：2011-02-08
申请号：US12129714
申请日：2008-05-30
申请人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
发明人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
IPC分类号： H01L21/00
CPC分类号： H01L27/14647 , H01L27/14609 , H01L27/14641 , H01L27/14683
摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器包括在第一半导体衬底中形成包括第一半导体材料的第一感光二极管。在第二半导体衬底中形成包括具有与第一半导体材料不同的光检测波长范围的第二半导体材料的第二光敏二极管。用于保持和检测包括CMOS图像传感器的感测电路的电荷的半导体器件也可以形成在第二半导体衬底中。第一半导体衬底和第二半导体衬底被接合，使得第一感光二极管位于第二感光二极管的下方。第一和第二光敏二极管的垂直堆叠检测第一和第二半导体材料的组合检测波长范围内的光。感测装置可以在第一和第二光敏二极管之间共享。

5. 发明申请

US20090294813A1 Optical Sensor Including Stacked Photodiodes 有权
标题翻译：包含堆叠光电二极管的光学传感器
公开(公告)号：US20090294813A1
公开(公告)日：2009-12-03
申请号：US12129716
申请日：2008-05-30
申请人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
发明人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
IPC分类号： H01L27/146
CPC分类号： H01L27/14647 , H01L27/14632 , H01L27/14641 , H01L27/14687
摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器包括在第一半导体衬底中形成包括第一半导体材料的第一感光二极管。在第二半导体衬底中形成包括具有与第一半导体材料不同的光检测波长范围的第二半导体材料的第二光敏二极管。用于保持和检测包括CMOS图像传感器的感测电路的电荷的半导体器件也可以形成在第二半导体衬底中。第一半导体衬底和第二半导体衬底被接合，使得第一感光二极管位于第二感光二极管的下方。第一和第二光敏二极管的垂直堆叠检测第一和第二半导体材料的组合检测波长范围内的光。感测装置可以在第一和第二光敏二极管之间共享。

6. 发明申请

US20110072409A1 OPTICAL SENSOR INCLUDING STACKED PHOTODIODES 审中-公开
标题翻译：光学传感器，包括堆积的光刻胶
公开(公告)号：US20110072409A1
公开(公告)日：2011-03-24
申请号：US12951674
申请日：2010-11-22
申请人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
发明人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
IPC分类号： G06F17/50
CPC分类号： H01L27/14647 , H01L27/14632 , H01L27/14641 , H01L27/14687
摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器包括在第一半导体衬底中形成包括第一半导体材料的第一感光二极管。在第二半导体衬底中形成包括具有与第一半导体材料不同的光检测波长范围的第二半导体材料的第二光敏二极管。用于保持和检测包括CMOS图像传感器的感测电路的电荷的半导体器件也可以形成在第二半导体衬底中。第一半导体衬底和第二半导体衬底被接合，使得第一感光二极管位于第二感光二极管的下方。第一和第二光敏二极管的垂直堆叠检测第一和第二半导体材料的组合检测波长范围内的光。感测装置可以在第一和第二光敏二极管之间共享。

7. 发明申请

US20090294812A1 Optical Sensor Including Stacked Photosensitive Diodes 有权
标题翻译：包含堆叠感光二极管的光学传感器
公开(公告)号：US20090294812A1
公开(公告)日：2009-12-03
申请号：US12129714
申请日：2008-05-30
申请人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
发明人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14647 , H01L27/14609 , H01L27/14641 , H01L27/14683
摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器包括在第一半导体衬底中形成包括第一半导体材料的第一感光二极管。在第二半导体衬底中形成包括具有与第一半导体材料不同的光检测波长范围的第二半导体材料的第二光敏二极管。用于保持和检测包括CMOS图像传感器的感测电路的电荷的半导体器件也可以形成在第二半导体衬底中。第一半导体衬底和第二半导体衬底被接合，使得第一感光二极管位于第二感光二极管的下方。第一和第二光敏二极管的垂直堆叠检测第一和第二半导体材料的组合检测波长范围内的光。感测装置可以在第一和第二光敏二极管之间共享。

8. 发明授权

US07752589B2 Method, apparatus, and computer program product for displaying and modifying the critical area of an integrated circuit design 失效
标题翻译：用于显示和修改集成电路设计的关键区域的方法，装置和计算机程序产品
公开(公告)号：US07752589B2
公开(公告)日：2010-07-06
申请号：US11620059
申请日：2007-01-05
申请人： Robert J. Allen , Sarah C. Braasch , Matthew T. Guzowski , Jason D. Hibbeler , Daniel N. Maynard , Kevin W. McCullen , Evanthia Papadopoulou , Mervyn Y. Tan , Robert F. Walker
发明人： Robert J. Allen , Sarah C. Braasch , Matthew T. Guzowski , Jason D. Hibbeler , Daniel N. Maynard , Kevin W. McCullen , Evanthia Papadopoulou , Mervyn Y. Tan , Robert F. Walker
IPC分类号： G06F17/50
CPC分类号： G06F17/5068
摘要： A method, apparatus, and computer program product for visually indicating the interaction between one or more edges of a design that contribute to a defined critical area pattern.
摘要翻译：一种用于可视地指示有助于定义的关键区域图案的设计的一个或多个边缘之间的交互的方法，装置和计算机程序产品。

9. 发明申请

US20090031263A1 METHOD AND SYSTEM FOR ANALYZING AN INTEGRATED CIRCUIT BASED ON SAMPLE WINDOWS SELECTED USING AN OPEN DETERMINISTIC SEQUENCING TECHNIQUE 有权
标题翻译：基于使用开放式确定性测序技术选择的样本窗口分析集成电路的方法和系统
公开(公告)号：US20090031263A1
公开(公告)日：2009-01-29
申请号：US11828728
申请日：2007-07-26
申请人： Sarah C. Braasch , Jason D. Hibbeler , Rouwaida N. Kanj , Daniel N. Maynard , Sani R. Nassif , Evanthia Papadopoulou
发明人： Sarah C. Braasch , Jason D. Hibbeler , Rouwaida N. Kanj , Daniel N. Maynard , Sani R. Nassif , Evanthia Papadopoulou
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： Disclosed herein are embodiments of a system and an associated method for analyzing an integrated circuit to determine the value of a particular attribute (i.e., a physical or electrical property) in that integrated circuit. In the embodiments, an open deterministic sequencing technique is used to select a sequence of points representing centers of sample windows in an integrated circuit layout. Then, the value of the particular attribute is determined for each sample window and the results are accumulated in order to infer an overall value for that particular attribute for the entire integrated circuit layout. This sequencing technique has the advantage of allowing additional sample windows to be added and/or the sizes and shapes of the windows to be varied without hindering the quality of the sample.
摘要翻译：这里公开的是用于分析集成电路以确定该集成电路中的特定属性（即，物理或电气特性）的值的系统和相关方法的实施例。在实施例中，使用开放确定性测序技术来选择表示集成电路布局中的样本窗口中心的点序列。然后，为每个采样窗口确定特定属性的值，并累积结果，以推断整个集成电路布局的该特定属性的总体值。这种测序技术具有允许添加附加样品窗口和/或改变窗口的尺寸和形状而不妨碍样品质量的优点。

10. 发明申请

US20080195989A1 CONTENT BASED YIELD PREDICTION OF VLSI DESIGNS 失效
标题翻译：基于内容的VLSI设计预测
公开(公告)号：US20080195989A1
公开(公告)日：2008-08-14
申请号：US12101599
申请日：2008-04-11
申请人： Robert J. Allen , Daria R. Dooling , Jason D. Hibbeler , Daniel N. Maynard , Sarah C. Prue , Ralph J. Williams
发明人： Robert J. Allen , Daria R. Dooling , Jason D. Hibbeler , Daniel N. Maynard , Sarah C. Prue , Ralph J. Williams
IPC分类号： G06F9/45
CPC分类号： G06F17/5045
摘要： An integrated circuit and program product for predicting yield of a VLSI design. An integrated circuit is provided including a system for identifying and grouping sub-circuits contained within an integrated circuit design by circuit type; a critical area calculation system for determining critical area values for different regions, wherein each different region is associated with a circuit type; a tallying system for calculating a plurality of tallies of critical area values based on circuit type; and a plurality of modeling subsystems for separately modeling each of the plurality of tallies based on circuit type.
摘要翻译：一种用于预测VLSI设计产量的集成电路和程序产品。提供一种集成电路，包括用于通过电路类型识别和分组集成电路设计中包含的子电路的系统; 用于确定不同区域的临界面积值的关键区域计算系统，其中每个不同区域与电路类型相关联; 用于基于电路类型计算多个临界面积值的计数系统; 以及多个建模子系统，用于基于电路类型对所述多个提议中的每一个进行单独建模。

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