专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08405751B2 Image sensor pixel structure employing a shared floating diffusion 有权
标题翻译：采用共享浮动扩散的图像传感器像素结构
公开(公告)号：US08405751B2
公开(公告)日：2013-03-26
申请号：US12534427
申请日：2009-08-03
申请人： Jason D. Hibbeler , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel
发明人： Jason D. Hibbeler , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel
IPC分类号： H04N5/335
CPC分类号： H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/37457
摘要： A pixel structure for an image sensor includes a semiconductor material portion having a coplanar and contiguous semiconductor surface and including four photodiodes, four channel regions, and a common floating diffusion region. Each of the four channel regions is directly adjoined to one of the four photodiodes and the common floating diffusion region. The four photodiodes are located within four different quadrants as defined employing a vertical line passing through a point within the common floating diffusion region as a center axis. The common floating diffusion region, a reset gate transistor, a source follower transistor, and a row select transistor are located within four different quadrants as defined employing a vertical line passing through a point within one of the photodiodes as an axis.
摘要翻译：图像传感器的像素结构包括具有共面且相邻的半导体表面的半导体材料部分，包括四个光电二极管，四个沟道区域和公共的浮动扩散区域。四个通道区域中的每一个直接邻接四个光电二极管和公共浮动扩散区域中的一个。四个光电二极管位于四个不同的象限内，如使用通过公共浮动扩散区域内的点作为中心轴的垂直线所限定的。公共浮动扩散区域，复位栅极晶体管，源极跟随器晶体管和行选择晶体管位于四个不同的象限内，如使用通过一个光电二极管内的点作为轴的垂直线所限定的。

2. 发明申请

US20110025892A1 IMAGE SENSOR PIXEL STRUCTURE EMPLOYING A SHARED FLOATING DIFFUSION 有权
标题翻译：图像传感器像素结构采用共享浮动扩展
公开(公告)号：US20110025892A1
公开(公告)日：2011-02-03
申请号：US12534427
申请日：2009-08-03
申请人： Jason D. Hibbeler , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel
发明人： Jason D. Hibbeler , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel
IPC分类号： H04N5/335 , H01L31/112 , G06F17/50
CPC分类号： H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/37457
摘要： A pixel structure for an image sensor includes a semiconductor material portion having a coplanar and contiguous semiconductor surface and including four photodiodes, four channel regions, and a common floating diffusion region. Each of the four channel regions is directly adjoined to one of the four photodiodes and the common floating diffusion region. The four photodiodes are located within four different quadrants as defined employing a vertical line passing through a point within the common floating diffusion region as a center axis. The common floating diffusion region, a reset gate transistor, a source follower transistor, and a row select transistor are located within four different quadrants as defined employing a vertical line passing through a point within one of the photodiodes as an axis.
摘要翻译：图像传感器的像素结构包括具有共面且相邻的半导体表面的半导体材料部分，包括四个光电二极管，四个沟道区域和公共的浮动扩散区域。四个通道区域中的每一个直接邻接四个光电二极管和公共浮动扩散区域中的一个。四个光电二极管位于四个不同的象限内，如使用通过公共浮动扩散区域内的点作为中心轴的垂直线所限定的。公共浮动扩散区域，复位栅极晶体管，源极跟随器晶体管和行选择晶体管位于四个不同的象限内，如使用通过一个光电二极管内的点作为轴的垂直线所限定的。

3. 发明申请

US20090294812A1 Optical Sensor Including Stacked Photosensitive Diodes 有权
标题翻译：包含堆叠感光二极管的光学传感器
公开(公告)号：US20090294812A1
公开(公告)日：2009-12-03
申请号：US12129714
申请日：2008-05-30
申请人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
发明人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14647 , H01L27/14609 , H01L27/14641 , H01L27/14683
摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器包括在第一半导体衬底中形成包括第一半导体材料的第一感光二极管。在第二半导体衬底中形成包括具有与第一半导体材料不同的光检测波长范围的第二半导体材料的第二光敏二极管。用于保持和检测包括CMOS图像传感器的感测电路的电荷的半导体器件也可以形成在第二半导体衬底中。第一半导体衬底和第二半导体衬底被接合，使得第一感光二极管位于第二感光二极管的下方。第一和第二光敏二极管的垂直堆叠检测第一和第二半导体材料的组合检测波长范围内的光。感测装置可以在第一和第二光敏二极管之间共享。

4. 发明申请

US20110072409A1 OPTICAL SENSOR INCLUDING STACKED PHOTODIODES 审中-公开
标题翻译：光学传感器，包括堆积的光刻胶
公开(公告)号：US20110072409A1
公开(公告)日：2011-03-24
申请号：US12951674
申请日：2010-11-22
申请人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
发明人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
IPC分类号： G06F17/50
CPC分类号： H01L27/14647 , H01L27/14632 , H01L27/14641 , H01L27/14687
摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器包括在第一半导体衬底中形成包括第一半导体材料的第一感光二极管。在第二半导体衬底中形成包括具有与第一半导体材料不同的光检测波长范围的第二半导体材料的第二光敏二极管。用于保持和检测包括CMOS图像传感器的感测电路的电荷的半导体器件也可以形成在第二半导体衬底中。第一半导体衬底和第二半导体衬底被接合，使得第一感光二极管位于第二感光二极管的下方。第一和第二光敏二极管的垂直堆叠检测第一和第二半导体材料的组合检测波长范围内的光。感测装置可以在第一和第二光敏二极管之间共享。

5. 发明授权

US07893468B2 Optical sensor including stacked photodiodes 有权
标题翻译：光学传感器包括堆叠的光电二极管
公开(公告)号：US07893468B2
公开(公告)日：2011-02-22
申请号：US12129716
申请日：2008-05-30
申请人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
发明人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
IPC分类号： H01L29/72
CPC分类号： H01L27/14647 , H01L27/14632 , H01L27/14641 , H01L27/14687
摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器包括在第一半导体衬底中形成包括第一半导体材料的第一感光二极管。在第二半导体衬底中形成包括具有与第一半导体材料不同的光检测波长范围的第二半导体材料的第二光敏二极管。用于保持和检测包括CMOS图像传感器的感测电路的电荷的半导体器件也可以形成在第二半导体衬底中。第一半导体衬底和第二半导体衬底被接合，使得第一感光二极管位于第二感光二极管的下方。第一和第二光敏二极管的垂直堆叠检测第一和第二半导体材料的组合检测波长范围内的光。感测装置可以在第一和第二光敏二极管之间共享。

6. 发明授权

US07883916B2 Optical sensor including stacked photosensitive diodes 有权
标题翻译：光学传感器包括堆叠感光二极管
公开(公告)号：US07883916B2
公开(公告)日：2011-02-08
申请号：US12129714
申请日：2008-05-30
申请人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
发明人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
IPC分类号： H01L21/00
CPC分类号： H01L27/14647 , H01L27/14609 , H01L27/14641 , H01L27/14683
摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器包括在第一半导体衬底中形成包括第一半导体材料的第一感光二极管。在第二半导体衬底中形成包括具有与第一半导体材料不同的光检测波长范围的第二半导体材料的第二光敏二极管。用于保持和检测包括CMOS图像传感器的感测电路的电荷的半导体器件也可以形成在第二半导体衬底中。第一半导体衬底和第二半导体衬底被接合，使得第一感光二极管位于第二感光二极管的下方。第一和第二光敏二极管的垂直堆叠检测第一和第二半导体材料的组合检测波长范围内的光。感测装置可以在第一和第二光敏二极管之间共享。

7. 发明申请

US20090294813A1 Optical Sensor Including Stacked Photodiodes 有权
标题翻译：包含堆叠光电二极管的光学传感器
公开(公告)号：US20090294813A1
公开(公告)日：2009-12-03
申请号：US12129716
申请日：2008-05-30
申请人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
发明人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
IPC分类号： H01L27/146
CPC分类号： H01L27/14647 , H01L27/14632 , H01L27/14641 , H01L27/14687
摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器包括在第一半导体衬底中形成包括第一半导体材料的第一感光二极管。在第二半导体衬底中形成包括具有与第一半导体材料不同的光检测波长范围的第二半导体材料的第二光敏二极管。用于保持和检测包括CMOS图像传感器的感测电路的电荷的半导体器件也可以形成在第二半导体衬底中。第一半导体衬底和第二半导体衬底被接合，使得第一感光二极管位于第二感光二极管的下方。第一和第二光敏二极管的垂直堆叠检测第一和第二半导体材料的组合检测波长范围内的光。感测装置可以在第一和第二光敏二极管之间共享。

8. 发明授权

US07703060B2 Stitched IC layout methods, systems and program product 失效
标题翻译：拼接IC布局方法，系统和程序产品
公开(公告)号：US07703060B2
公开(公告)日：2010-04-20
申请号：US11678069
申请日：2007-02-23
申请人： Timothy G. Dunham , Robert K. Leidy , Kevin N. Ogg , Richard J. Rassel , Valarmathi C. Shanmugam
发明人： Timothy G. Dunham , Robert K. Leidy , Kevin N. Ogg , Richard J. Rassel , Valarmathi C. Shanmugam
IPC分类号： G06F17/50
CPC分类号： G03F7/70475 , G03F7/70466 , G03F7/70691
摘要： Stitched integrated circuit (IC) chip layout methods, systems and program products are disclosed. In one embodiment, a method includes obtaining from a first entity a circuit design for an IC chip layout that exceeds a size of a photolithography tool field at a second entity, wherein the IC chip layout includes for at least one stitched region of a plurality of stitched regions: a boundary identification identifying a boundary of the at least one stitched region at which stitching occurs and a type indicator indicating whether the at least one stitched region is one of: redundant and unique; dissecting the IC chip layout into stitched regions indicated as unique or redundant at the second entity; and generating a photolithographic reticle at the second entity based on the plurality of stitched regions, the photolithographic reticle having a size that fits within the size of the photolithographic tool field at the second entity.
摘要翻译：公布了拼接集成电路（IC）芯片布局方法，系统和程序产品。在一个实施例中，一种方法包括从第一实体获得超过第二实体上的光刻工具区域的尺寸的IC芯片布局的电路设计，其中IC芯片布局包括用于多个缝合区域：识别发生缝合的至少一个缝合区域的边界的边界标识和指示所述至少一个缝合区域是否是以下之一的类型指示器：冗余且唯一; 将IC芯片布局解剖为在第二实体处表示为唯一或冗余的缝合区域; 以及基于所述多个缝合区域在所述第二实体处产生光刻掩模版，所述光刻掩模版具有适合在所述第二实体处的所述光刻工具区域的尺寸内的尺寸。

9. 发明申请

US20090276739A1 IC CHIP AND DESIGN STRUCTURE INCLUDING STITCHED CIRCUITRY REGION BOUNDARY IDENTIFICATION 有权
标题翻译： IC芯片和设计结构，包括纹路电路区域边界识别
公开(公告)号：US20090276739A1
公开(公告)日：2009-11-05
申请号：US12112336
申请日：2008-04-30
申请人： Robert K. Leidy , Kevin N. Ogg , Richard J. Rassel , Jeanne-Tania Sucharitaves
发明人： Robert K. Leidy , Kevin N. Ogg , Richard J. Rassel , Jeanne-Tania Sucharitaves
IPC分类号： G06F17/50
CPC分类号： G03F7/70475 , G03F1/00 , G03F1/50 , G03F7/70466
摘要： Stitched circuitry region boundary identification for a stitched IC chip layout is presented along with a related IC chip and design structure. One method includes obtaining a circuit design for an integrated circuit (IC) chip layout that exceeds a size of a photolithography tool field, wherein the IC chip layout includes a stitched circuitry region; and modifying the IC chip layout to include a boundary identification identifying a boundary of the stitched circuitry region at which stitching occurs, wherein the boundary identification takes the form of a negative space in the IC chip layout. One IC chip may include a plurality of stitched circuitry regions; and a boundary identification identifying a boundary between a pair of the stitched circuitry regions, wherein the boundary identification takes the form of a negative space in a layer of the IC chip.
摘要翻译：针对IC芯片布线的缝合电路区域边界识别以及相关的IC芯片和设计结构。一种方法包括获得超过光刻工具领域的尺寸的集成电路（IC）芯片布局的电路设计，其中IC芯片布局包括缝合电路区域; 以及修改IC芯片布局以包括标识发生缝合的缝合电路区域的边界的边界标识，其中边界识别在IC芯片布局中采取负空间的形式。一个IC芯片可以包括多个缝合电路区域; 以及识别一对缝合电路区域之间的边界的边界识别，其中边界识别在IC芯片的层中采取负空间的形式。

10. 发明授权

US08158988B2 Interlevel conductive light shield 有权
公开(公告)号：US08158988B2
公开(公告)日：2012-04-17
申请号：US12133380
申请日：2008-06-05
申请人： Jeffrey P. Gambino , Zhong-Xiang He , Kevin N. Ogg , Richard J. Rassel , Robert M. Rassel
发明人： Jeffrey P. Gambino , Zhong-Xiang He , Kevin N. Ogg , Richard J. Rassel , Robert M. Rassel
IPC分类号： H01L27/15 , H01L29/267 , H01L31/12 , H01L33/00
CPC分类号： H01L27/14623 , H01L27/14609 , H01L27/14632 , H01L27/14643
摘要： A CMOS image sensor pixel includes a conductive light shield, which is located between a first dielectric layer and a second dielectric layer. At least one via extends from a top surface of the second dielectric layer to a bottom surface of the first dielectric layer is formed in the metal interconnect structure. The conductive light shield may be formed within a contact level between a top surface of a semiconductor substrate and a first metal line level, or may be formed in any metal interconnect via level between two metal line levels. The inventive CMOS image sensor pixel enables reduction of noise in the signal stored in the floating drain.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式