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1. 发明申请

US20100033195A1 PASSIVE CAPACITIVELY-COUPLED ELECTROSTATIC (CCE) PROBE ARRANGEMENT FOR DETECTING PLASMA INSTABILITIES IN A PLASMA PROCESSING CHAMBER 有权
标题翻译：用于检测等离子体处理室中的等离子体不稳定性的被动电容耦合静电（CCE）探测器布置
公开(公告)号：US20100033195A1
公开(公告)日：2010-02-11
申请号：US12498950
申请日：2009-07-07
申请人： Jean-Paul Booth , Mikio Nagai , Douglas Keil
发明人： Jean-Paul Booth , Mikio Nagai , Douglas Keil
IPC分类号： G01R27/26 , G01N27/22
CPC分类号： H01J37/32935
摘要： An arrangement for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing is provided. The arrangement includes a probe arrangement, wherein the probe arrangement is disposed on a surface of the processing chamber and is configured to measure at least one plasma processing parameter. The probe arrangement includes a plasma-facing sensor and a measuring capacitor, wherein the plasma-facing sensor is coupled to a first plate of the measuring capacitor. The arrangement also includes a detection arrangement, which is coupled to a second plate of the measuring capacitor. The detection arrangement is configured to convert an induced current flowing through the measuring capacitor into a set of digital signals, the set of digital signals being processed to detect the plasma instability.
摘要翻译：提供了一种用于在衬底处理期间检测等离子体处理系统的处理室内的等离子体不稳定性的装置。该装置包括探针装置，其中探针装置设置在处理室的表面上并被配置成测量至少一个等离子体处理参数。探针装置包括等离子体面向传感器和测量电容器，其中等离子体面向传感器耦合到测量电容器的第一板。该装置还包括耦合到测量电容器的第二板的检测装置。检测装置被配置为将流过测量电容器的感应电流转换成一组数字信号，该组数字信号被处理以检测等离子体不稳定性。

2. 发明申请

US20120316834A1 PASSIVE CAPACITIVELY-COUPLED ELECTROSTATIC (CCE) PROBE METHOD FOR DETECTING PLASMA INSTABILITIES IN A PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于检测等离子体处理室中的等离子体不稳定性的被动电容耦合静电（CCE）探测方法
公开(公告)号：US20120316834A1
公开(公告)日：2012-12-13
申请号：US13470187
申请日：2012-05-11
申请人： Jean-Paul Booth , Mikio Nagai , Douglas Keil
发明人： Jean-Paul Booth , Mikio Nagai , Douglas Keil
IPC分类号： G06F15/00 , G01R27/08
CPC分类号： H01J37/32935
摘要： A method for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing is provided. The method includes collecting a set of process data, the process data including a set of induced current signals flowing through a measuring capacitor. The method further includes converting the set of induced current signals into a set of analog voltage signals and converting the set of analog voltage signals into a set of digital signals. The method also includes analyzing the set of digital signals to detect high frequency perturbations, the high frequency perturbations indicating the plasma instability.
摘要翻译：提供了一种用于在衬底处理期间检测等离子体处理系统的处理室内的等离子体不稳定性的方法。该方法包括收集一组过程数据，该过程数据包括一组流过测量电容器的感应电流信号。该方法还包括将感应电流信号集合转换为一组模拟电压信号，并将该组模拟电压信号转换成一组数字信号。该方法还包括分析数字信号的集合以检测高频扰动，高频扰动表示等离子体不稳定性。

3. 发明授权

US09153421B2 Passive capacitively-coupled electrostatic (CCE) probe method for detecting plasma instabilities in a plasma processing chamber 有权
标题翻译：用于检测等离子体处理室中的等离子体不稳定性的无源电容耦合静电（CCE）探针方法
公开(公告)号：US09153421B2
公开(公告)日：2015-10-06
申请号：US13470187
申请日：2012-05-11
申请人： Jean-Paul Booth , Mikio Nagai , Douglas Keil
发明人： Jean-Paul Booth , Mikio Nagai , Douglas Keil
IPC分类号： G01R31/00 , H01J37/32
CPC分类号： H01J37/32935
摘要： A method for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing is provided. The method includes collecting a set of process data, the process data including a set of induced current signals flowing through a measuring capacitor. The method further includes converting the set of induced current signals into a set of analog voltage signals and converting the set of analog voltage signals into a set of digital signals. The method also includes analyzing the set of digital signals to detect high frequency perturbations, the high frequency perturbations indicating the plasma instability.
摘要翻译：提供了一种用于在衬底处理期间检测等离子体处理系统的处理室内的等离子体不稳定性的方法。该方法包括收集一组过程数据，该过程数据包括一组流过测量电容器的感应电流信号。该方法还包括将感应电流信号集合转换为一组模拟电压信号，并将该组模拟电压信号转换成一组数字信号。该方法还包括分析数字信号的集合以检测高频扰动，高频扰动表示等离子体不稳定性。

4. 发明授权

US08179152B2 Passive capacitively-coupled electrostatic (CCE) probe arrangement for detecting plasma instabilities in a plasma processing chamber 有权
标题翻译：被动电容耦合静电（CCE）探针装置，用于检测等离子体处理室中的等离子体不稳定性
公开(公告)号：US08179152B2
公开(公告)日：2012-05-15
申请号：US12498950
申请日：2009-07-07
申请人： Jean-Paul Booth , Mikio Nagai , Douglas Keil
发明人： Jean-Paul Booth , Mikio Nagai , Douglas Keil
IPC分类号： G01R31/08
CPC分类号： H01J37/32935
摘要： An arrangement for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing is provided. The arrangement includes a probe arrangement, wherein the probe arrangement is disposed on a surface of the processing chamber and is configured to measure at least one plasma processing parameter. The probe arrangement includes a plasma-facing sensor and a measuring capacitor, wherein the plasma-facing sensor is coupled to a first plate of the measuring capacitor. The arrangement also includes a detection arrangement, which is coupled to a second plate of the measuring capacitor. The detection arrangement is configured to convert an induced current flowing through the measuring capacitor into a set of digital signals, the set of digital signals being processed to detect the plasma instability.
摘要翻译：提供了一种用于在衬底处理期间检测等离子体处理系统的处理室内的等离子体不稳定性的装置。该装置包括探针装置，其中探针装置设置在处理室的表面上并被配置成测量至少一个等离子体处理参数。探针装置包括等离子体面向传感器和测量电容器，其中等离子体面向传感器耦合到测量电容器的第一板。该装置还包括耦合到测量电容器的第二板的检测装置。检测装置被配置为将流过测量电容器的感应电流转换成一组数字信号，该组数字信号被处理以检测等离子体不稳定性。

5. 发明授权

US08547085B2 Plasma-facing probe arrangement including vacuum gap for use in a plasma processing chamber 有权
标题翻译：面向等离子体的探针装置包括用于等离子体处理室中的真空间隙
公开(公告)号：US08547085B2
公开(公告)日：2013-10-01
申请号：US12498940
申请日：2009-07-07
申请人： Jean-Paul Booth , Douglas Keil
发明人： Jean-Paul Booth , Douglas Keil
IPC分类号： G01P3/48 , G01P3/54
CPC分类号： G01R19/0061 , H01J37/32541 , H01J37/32577 , H01J37/32935
摘要： An arrangement for measuring process parameters within a processing chamber is provided. The arrangement includes a probe arrangement disposed in an opening of an upper electrode. Probe arrangement includes a probe head, which includes a head portion and a flange portion. The arrangement also includes an o-ring disposed between the upper electrode and the flange portion. The arrangement further includes a spacer made of an electrically insulative material positioned between the head portion and the opening of the upper electrode to prevent the probe arrangement from touching the upper electrode. The spacer includes a disk portion configured for supporting an underside of the flange portion. The spacer also includes a hollow cylindrical portion configured to encircle the head portion. The spacer forms a right-angled path between the o-ring and an opening to the processing chamber to prevent direct line-of-sight path between the o-ring and the opening to the processing chamber.
摘要翻译：提供了一种用于测量处理室内的工艺参数的装置。该装置包括设置在上电极的开口中的探针装置。探头装置包括探头，其包括头部和凸缘部分。该布置还包括设置在上电极和凸缘部分之间的O形环。该布置还包括由电绝缘材料制成的隔离物，该隔离物位于头部和上电极的开口之间，以防止探针装置接触上电极。间隔件包括构造成用于支撑凸缘部分的下侧的盘部分。间隔件还包括构造成环绕头部的中空圆柱形部分。间隔件在O形环和处理室的开口之间形成直角路径，以防止O形环和处理室的开口之间的直接视线路径。

6. 发明申请

US20120259562A1 PROCESSING SYSTEM FOR DETECTING IN-SITU ARCING EVENTS DURING SUBSTRATE PROCESSING 审中-公开
标题翻译：用于在基板处理期间检测现场ARCING事件的处理系统
公开(公告)号：US20120259562A1
公开(公告)日：2012-10-11
申请号：US13441187
申请日：2012-04-06
申请人： Jean-Paul Booth , Douglas Keil
发明人： Jean-Paul Booth , Douglas Keil
IPC分类号： G01R31/02 , G06F19/00
CPC分类号： H01J37/3299 , G01D5/24 , G01R27/2605 , G01R31/1272 , G01R31/34 , G01R31/343 , H01J37/32935 , H02H1/0015 , H02H3/44
摘要： A processing system for detecting in-situ arcing events during substrate processing is provided. The processing systems includes at least a plasma processing chamber having a probe arrangement, wherein said probe arrangement is disposed on a surface of said processing chamber and is configured to measure at least one plasma processing parameter. The probe arrangement includes a plasma-facing sensor and a measuring capacitor, wherein the plasma-facing sensor is coupled to a first plate of the measuring capacitor. The probe arrangement also includes a detection arrangement that is coupled to a second plate of the measuring capacitor, wherein the detection arrangement is configured for converting an induced current flowing through the measuring capacitor into a set of digital signals, which is processed to detect the in-situ arcing events.
摘要翻译：提供了一种用于在衬底处理期间检测原位电弧事件的处理系统。处理系统至少包括具有探针装置的等离子体处理室，其中所述探针装置设置在所述处理室的表面上并被配置成测量至少一个等离子体处理参数。探针装置包括等离子体面向传感器和测量电容器，其中等离子体面向传感器耦合到测量电容器的第一板。探针装置还包括耦合到测量电容器的第二板的检测装置，其中检测装置被配置为将流过测量电容器的感应电流转换成一组数字信号，该组数字信号被处理以检测在电击事件。

7. 发明申请

US20090322342A1 METHODS FOR AUTOMATICALLY CHARACTERIZING A PLASMA 有权
标题翻译：自动表征等离子体的方法
公开(公告)号：US20090322342A1
公开(公告)日：2009-12-31
申请号：US12477007
申请日：2009-06-02
申请人： Douglas Keil , Jean-Paul Booth , Christopher Thorgrimsson
发明人： Douglas Keil , Jean-Paul Booth , Christopher Thorgrimsson
IPC分类号： G01N27/62
CPC分类号： H01J37/32935 , H01J37/32091 , H01J37/32146 , H01J37/32926 , H01J37/32954 , H01J2237/244 , H01J2237/24564 , H01J2237/327 , H01L21/263
摘要： A method for automatically characterizing plasma during substrate processing is provided. The method includes collecting a set of process data, which includes at least data about current and voltage. The method also includes identifying a relevancy range for the set of process data, wherein the relevancy range includes a subset of the set of process data. The method further includes determining a set of seed values. The method yet also includes employing the relevancy range and the set of seed values to perform curve-fitting, wherein the curve-fitting enables the plasma to be automatically characterized.
摘要翻译：提供了一种用于在衬底处理期间自动表征等离子体的方法。该方法包括收集一组过程数据，其至少包括关于电流和电压的数据。该方法还包括识别该组过程数据的相关范围，其中相关范围包括一组过程数据的子集。该方法还包括确定一组种子值。该方法还包括采用相关范围和种子值集来执行曲线拟合，其中曲线拟合使等离子体能够被自动表征。

8. 发明申请

US20100007362A1 RF-BIASED CAPACITIVELY-COUPLED ELECTROSTATIC (RFB-CCE) PROBE ARRANGEMENT FOR CHARACTERIZING A FILM IN A PLASMA PROCESSING CHAMBER 有权
标题翻译：用于表征等离子体处理室中的薄膜的RF偏置电容耦合静电（RFB-CCE）探针布置
公开(公告)号：US20100007362A1
公开(公告)日：2010-01-14
申请号：US12498955
申请日：2009-07-07
申请人： Jean-Paul Booth , Luc Albarede , Jung Kim , Douglas Keil
发明人： Jean-Paul Booth , Luc Albarede , Jung Kim , Douglas Keil
IPC分类号： G01R27/26 , G01R31/28
CPC分类号： H01J37/32935 , H01L21/67069 , H01L22/14 , Y10T29/49004
摘要： A method for characterizing deposited film on a substrate within a processing chamber during processing is provided. The method includes determining voltage-current characteristic for a probe head when measuring capacitor is set at a first capacitance value. The method also includes applying RF train to the probe head when measuring capacitor is set at a capacitance value greater than first capacitance value. The method further includes providing an initial resistance value and an initial capacitance value for the deposited film. The method yet also includes employing initial resistance value, initial capacitance value, and voltage-current characteristic to generate simulated voltage-time curve. The method yet further includes determining measured voltage-time curve, which represents potential drop across the deposited film for one RF train. The method more over includes comparing the two curves. If the difference is less than predefined threshold, employ initial resistance value and initial capacitance for characterizing the deposited film.
摘要翻译：提供了一种在处理期间在处理室内的基板上表征沉积膜的方法。该方法包括当测量电容器被设置在第一电容值时确定探头的电压 - 电流特性。该方法还包括当测量电容器被设置为大于第一电容值的电容值时，将RF串施加到探头。该方法还包括为沉积膜提供初始电阻值和初始电容值。该方法还包括采用初始电阻值，初始电容值和电压 - 电流特性来产生模拟电压 - 时间曲线。该方法还包括确定测量的电压时间曲线，其表示用于一个RF火车的沉积膜的电位降。更多的方法包括比较两条曲线。如果差值小于预定阈值，则使用初始电阻值和初始电容来表征沉积膜。

9. 发明授权

US08164353B2 RF-biased capacitively-coupled electrostatic (RFB-CCE) probe arrangement for characterizing a film in a plasma processing chamber 有权
标题翻译：用于表征等离子体处理室中的膜的RF偏置电容耦合静电（RFB-CCE）探针装置
公开(公告)号：US08164353B2
公开(公告)日：2012-04-24
申请号：US12498955
申请日：2009-07-07
申请人： Jean-Paul Booth , Luc Albarede , Jung Kim , Douglas Keil
发明人： Jean-Paul Booth , Luc Albarede , Jung Kim , Douglas Keil
IPC分类号： G01R27/26 , G01R31/08
CPC分类号： H01J37/32935 , H01L21/67069 , H01L22/14 , Y10T29/49004
摘要： A method for characterizing deposited film on a substrate within a processing chamber during processing is provided. The method includes determining voltage-current characteristic for a probe head when measuring capacitor is set at a first capacitance value. The method also includes applying RF train to the probe head when measuring capacitor is set at a capacitance value greater than first capacitance value. The method further includes providing an initial resistance value and an initial capacitance value for the deposited film. The method yet also includes employing initial resistance value, initial capacitance value, and voltage-current characteristic to generate simulated voltage-time curve. The method yet further includes determining measured voltage-time curve, which represents potential drop across the deposited film for one RF train. The method more over includes comparing the two curves. If the difference is less than predefined threshold, employ initial resistance value and initial capacitance for characterizing the deposited film.
摘要翻译：提供了一种在处理期间在处理室内的基板上表征沉积膜的方法。该方法包括当测量电容器被设置在第一电容值时确定探头的电压 - 电流特性。该方法还包括当测量电容器被设置为大于第一电容值的电容值时，将RF串施加到探头。该方法还包括为沉积膜提供初始电阻值和初始电容值。该方法还包括采用初始电阻值，初始电容值和电压 - 电流特性来产生模拟电压 - 时间曲线。该方法还包括确定测量的电压时间曲线，其表示用于一个RF火车的沉积膜的电位降。更多的方法包括比较两条曲线。如果差值小于预定阈值，则使用初始电阻值和初始电容来表征沉积膜。

10. 发明申请

US20100007337A1 PLASMA-FACING PROBE ARRANGEMENT INCLUDING VACUUM GAP FOR USE IN A PLASMA PROCESSING CHAMBER 有权
标题翻译：等离子体探测装置，包括用于等离子体加工室的真空气隙
公开(公告)号：US20100007337A1
公开(公告)日：2010-01-14
申请号：US12498940
申请日：2009-07-07
申请人： Jean-Paul Booth , Douglas Keil
发明人： Jean-Paul Booth , Douglas Keil
IPC分类号： G01R1/06
CPC分类号： G01R19/0061 , H01J37/32541 , H01J37/32577 , H01J37/32935
摘要： An arrangement for measuring process parameters within a processing chamber is provided. The arrangement includes a probe arrangement disposed in an opening of an upper electrode. Probe arrangement includes a probe head, which includes a head portion and a flange portion. The arrangement also includes an o-ring disposed between the upper electrode and the flange portion. The arrangement further includes a spacer made of an electrically insulative material positioned between the head portion and the opening of the upper electrode to prevent the probe arrangement from touching the upper electrode. The spacer includes a disk portion configured for supporting an underside of the flange portion. The spacer also includes a hollow cylindrical portion configured to encircle the head portion. The spacer forms a right-angled path between the o-ring and an opening to the processing chamber to prevent direct line-of-sight path between the o-ring and the opening to the processing chamber.
摘要翻译：提供了一种用于测量处理室内的工艺参数的装置。该装置包括设置在上电极的开口中的探针装置。探头装置包括探头，其包括头部和凸缘部分。该布置还包括设置在上电极和凸缘部分之间的O形环。该布置还包括由电绝缘材料制成的隔离物，该隔离物位于头部和上电极的开口之间，以防止探针装置接触上电极。间隔件包括构造成用于支撑凸缘部分的下侧的盘部分。间隔件还包括构造成环绕头部的中空圆柱形部分。间隔件在O形环和处理室的开口之间形成直角路径，以防止O形环和处理室的开口之间的直接视线路径。

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