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    • 2. 发明申请
    • METHODS AND APPARATUS FOR NORMALIZING OPTICAL EMISSION SPECTRA
    • 用于正常化光学发射光谱的方法和装置
    • US20120170039A1
    • 2012-07-05
    • US13415763
    • 2012-03-08
    • Vijayakumar C. VenugopalEric PapeJean-Paul Booth
    • Vijayakumar C. VenugopalEric PapeJean-Paul Booth
    • G01J3/42
    • G01N21/274G01J3/02G01J3/0205G01J3/0218G01J3/0294G01J3/443G01N21/68
    • A processing system having a chamber for in-situ optical interrogation of plasma emission to quantitatively measure normalized optical emission spectra is provided. The processing chamber includes a confinement ring assembly, a flash lamp, and a set of quartz windows. The processing chamber also includes a plurality of collimated optical assemblies, the plurality of collimated optical assemblies are optically coupled to the set of quartz windows. The processing chamber also includes a plurality of fiber optic bundles. The processing chamber also includes a multi-channel spectrometer, the multi-channel spectrometer is configured with at least a signal channel and a reference channel, the signal channel is optically coupled to at least the flash lamp, the set of quartz windows, the set of collimated optical assemblies, the illuminated fiber optic bundle, and the collection fiber optic bundle to measure a first signal.
    • 提供一种具有用于等离子体发射的原位光询问室以定量测量归一化光发射光谱的处理系统。 处理室包括限制环组件,闪光灯和一组石英窗。 处理室还包括多个准直光学组件,多个准直光学组件光学耦合到该组石英窗口。 处理室还包括多个光纤束。 处理室还包括多通道光谱仪,多通道光谱仪配置有至少一个信号通道和一个参考通道,信号通道光学耦合到至少闪光灯,该组石英窗,该组 准直光学组件,照明光纤束和收集光纤束以测量第一信号。
    • 3. 发明申请
    • PASSIVE CAPACITIVELY-COUPLED ELECTROSTATIC (CCE) PROBE ARRANGEMENT FOR DETECTING PLASMA INSTABILITIES IN A PLASMA PROCESSING CHAMBER
    • 用于检测等离子体处理室中的等离子体不稳定性的被动电容耦合静电(CCE)探测器布置
    • US20100033195A1
    • 2010-02-11
    • US12498950
    • 2009-07-07
    • Jean-Paul BoothMikio NagaiDouglas Keil
    • Jean-Paul BoothMikio NagaiDouglas Keil
    • G01R27/26G01N27/22
    • H01J37/32935
    • An arrangement for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing is provided. The arrangement includes a probe arrangement, wherein the probe arrangement is disposed on a surface of the processing chamber and is configured to measure at least one plasma processing parameter. The probe arrangement includes a plasma-facing sensor and a measuring capacitor, wherein the plasma-facing sensor is coupled to a first plate of the measuring capacitor. The arrangement also includes a detection arrangement, which is coupled to a second plate of the measuring capacitor. The detection arrangement is configured to convert an induced current flowing through the measuring capacitor into a set of digital signals, the set of digital signals being processed to detect the plasma instability.
    • 提供了一种用于在衬底处理期间检测等离子体处理系统的处理室内的等离子体不稳定性的装置。 该装置包括探针装置,其中探针装置设置在处理室的表面上并被配置成测量至少一个等离子体处理参数。 探针装置包括等离子体面向传感器和测量电容器,其中等离子体面向传感器耦合到测量电容器的第一板。 该装置还包括耦合到测量电容器的第二板的检测装置。 检测装置被配置为将流过测量电容器的感应电流转换成一组数字信号,该组数字信号被处理以检测等离子体不稳定性。
    • 6. 发明授权
    • Capacitively-coupled electrostatic (CCE) probe arrangement for detecting dechucking in a plasma processing chamber and methods thereof
    • 用于检测等离子体处理室中的脱扣的电容耦合静电(CCE)探针装置及其方法
    • US08780522B2
    • 2014-07-15
    • US12498939
    • 2009-07-07
    • Jean-Paul BoothDouglas L. Keil
    • Jean-Paul BoothDouglas L. Keil
    • H01L21/683
    • H01L21/6833
    • A method for identifying a signal perturbation characteristic of a dechucking event within a processing chamber of a plasma processing system is provided. The method includes executing a dechucking step within the processing chamber to remove a substrate from a lower electrode, wherein the dechucking step includes generating plasma capable of providing a current to neutralize an electrostatic charge on the substrate. The method also includes employing a probe head to collect a set of characteristic parameter measurements during the dechucking step. The probe head is on a surface of the processing chamber, wherein the surface is within close proximity to a substrate surface. The method further includes comparing the set of characteristic parameter measurements against a pre-defined range. If the set of characteristic parameter measurements is within the pre-defined range, the electrostatic charge is removed from the substrate and the signal perturbation characteristic of the dechucking event is detected.
    • 提供了一种用于识别等离子体处理系统的处理室内的消磁事件的信号扰动特性的方法。 该方法包括执行处理室内的脱扣步骤以从下电极去除衬底,其中所述去开关步骤包括产生能够提供电流以中和衬底上的静电电荷的等离子体。 该方法还包括使用探针头在脱胶步骤期间收集一组特征参数测量。 探头位于处理室的表面上,其中表面在基板表面附近。 该方法还包括将特征参数测量集合与预定义范围进行比较。 如果特征参数测量集合在预定范围内,则从衬底去除静电电荷,并且检测到脱扣事件的信号扰动特性。
    • 7. 发明授权
    • RF-biased capacitively-coupled electrostatic (RFB-CCE) probe arrangement for characterizing a film in a plasma processing chamber
    • 用于表征等离子体处理室中的膜的RF偏置电容耦合静电(RFB-CCE)探针装置
    • US08164353B2
    • 2012-04-24
    • US12498955
    • 2009-07-07
    • Jean-Paul BoothLuc AlbaredeJung KimDouglas Keil
    • Jean-Paul BoothLuc AlbaredeJung KimDouglas Keil
    • G01R27/26G01R31/08
    • H01J37/32935H01L21/67069H01L22/14Y10T29/49004
    • A method for characterizing deposited film on a substrate within a processing chamber during processing is provided. The method includes determining voltage-current characteristic for a probe head when measuring capacitor is set at a first capacitance value. The method also includes applying RF train to the probe head when measuring capacitor is set at a capacitance value greater than first capacitance value. The method further includes providing an initial resistance value and an initial capacitance value for the deposited film. The method yet also includes employing initial resistance value, initial capacitance value, and voltage-current characteristic to generate simulated voltage-time curve. The method yet further includes determining measured voltage-time curve, which represents potential drop across the deposited film for one RF train. The method more over includes comparing the two curves. If the difference is less than predefined threshold, employ initial resistance value and initial capacitance for characterizing the deposited film.
    • 提供了一种在处理期间在处理室内的基板上表征沉积膜的方法。 该方法包括当测量电容器被设置在第一电容值时确定探头的电压 - 电流特性。 该方法还包括当测量电容器被设置为大于第一电容值的电容值时,将RF串施加到探头。 该方法还包括为沉积膜提供初始电阻值和初始电容值。 该方法还包括采用初始电阻值,初始电容值和电压 - 电流特性来产生模拟电压 - 时间曲线。 该方法还包括确定测量的电压时间曲线,其表示用于一个RF火车的沉积膜的电位降。 更多的方法包括比较两条曲线。 如果差值小于预定阈值,则使用初始电阻值和初始电容来表征沉积膜。
    • 9. 发明申请
    • CAPACITIVELY-COUPLED ELECTROSTATIC (CCE) PROBE ARRANGEMENT FOR DETECTING DECHUCKING IN A PLASMA PROCESSING CHAMBER AND METHODS THEREOF
    • 用于检测等离子体加工室中的检测的电容耦合静电(CCE)检测装置及其方法
    • US20100008015A1
    • 2010-01-14
    • US12498939
    • 2009-07-07
    • Jean-Paul BoothDouglas L. Keil
    • Jean-Paul BoothDouglas L. Keil
    • H01L21/683
    • H01L21/6833
    • A method for identifying a signal perturbation characteristic of a dechucking event within a processing chamber of a plasma processing system is provided. The method includes executing a dechucking step within the processing chamber to remove a substrate from a lower electrode, wherein the dechucking step includes generating plasma capable of providing a current to neutralize an electrostatic charge on the substrate. The method also includes employing a probe head to collect a set of characteristic parameter measurements during the dechucking step. The probe head is on a surface of the processing chamber, wherein the surface is within close proximity to a substrate surface. The method further includes comparing the set of characteristic parameter measurements against a pre-defined range. If the set of characteristic parameter measurements is within the pre-defined range, the electrostatic charge is removed from the substrate and the signal perturbation characteristic of the dechucking event is detected.
    • 提供了一种用于识别等离子体处理系统的处理室内的消磁事件的信号扰动特性的方法。 该方法包括执行处理室内的脱扣步骤以从下电极去除衬底,其中所述去开关步骤包括产生能够提供电流以中和衬底上的静电电荷的等离子体。 该方法还包括使用探针头在脱胶步骤期间收集一组特征参数测量。 探头位于处理室的表面上,其中表面在基板表面附近。 该方法还包括将特征参数测量集合与预定义范围进行比较。 如果特征参数测量集合在预定范围内,则从衬底去除静电电荷,并且检测到脱扣事件的信号扰动特性。
    • 10. 发明申请
    • PLASMA-FACING PROBE ARRANGEMENT INCLUDING VACUUM GAP FOR USE IN A PLASMA PROCESSING CHAMBER
    • 等离子体探测装置,包括用于等离子体加工室的真空气隙
    • US20100007337A1
    • 2010-01-14
    • US12498940
    • 2009-07-07
    • Jean-Paul BoothDouglas Keil
    • Jean-Paul BoothDouglas Keil
    • G01R1/06
    • G01R19/0061H01J37/32541H01J37/32577H01J37/32935
    • An arrangement for measuring process parameters within a processing chamber is provided. The arrangement includes a probe arrangement disposed in an opening of an upper electrode. Probe arrangement includes a probe head, which includes a head portion and a flange portion. The arrangement also includes an o-ring disposed between the upper electrode and the flange portion. The arrangement further includes a spacer made of an electrically insulative material positioned between the head portion and the opening of the upper electrode to prevent the probe arrangement from touching the upper electrode. The spacer includes a disk portion configured for supporting an underside of the flange portion. The spacer also includes a hollow cylindrical portion configured to encircle the head portion. The spacer forms a right-angled path between the o-ring and an opening to the processing chamber to prevent direct line-of-sight path between the o-ring and the opening to the processing chamber.
    • 提供了一种用于测量处理室内的工艺参数的装置。 该装置包括设置在上电极的开口中的探针装置。 探头装置包括探头,其包括头部和凸缘部分。 该布置还包括设置在上电极和凸缘部分之间的O形环。 该布置还包括由电绝缘材料制成的隔离物,该隔离物位于头部和上电极的开口之间,以防止探针装置接触上电极。 间隔件包括构造成用于支撑凸缘部分的下侧的盘部分。 间隔件还包括构造成环绕头部的中空圆柱形部分。 间隔件在O形环和处理室的开口之间形成直角路径,以防止O形环和处理室的开口之间的直接视线路径。