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1. 发明申请

US20150155183A1 METHOD AND APPARATUS FOR PULSE ELECTROCHEMICAL POLISHING 有权
标题翻译：脉冲电化学抛光方法与装置
公开(公告)号：US20150155183A1
公开(公告)日：2015-06-04
申请号：US14402853
申请日：2012-05-24
申请人： Jian Wang , Yinuo Jin , Jun Wang , Hui Wang
发明人： Jian Wang , Yinuo Jin , Jun Wang , Hui Wang
IPC分类号： H01L21/321 , C25F3/30 , H01L21/66
CPC分类号： H01L21/32115 , C25F3/16 , C25F3/30 , C25F7/00 , H01L22/12 , H01L22/20
摘要： A method and apparatus for pulse electrochemical polishing a wafer are disclosed. The method comprises steps of: establishing a duty cycle table showing all points on the wafer, a removal thickness corresponding to every point and a duty cycle corresponding to the removal thickness; driving a wafer chuck holding and positioning the wafer to move at a preset speed so that a special point on the wafer is right above a nozzle ejecting charged electrolyte onto the wafer; looking up the duty cycle table and obtaining the removal thickness and the duty cycle corresponding to the special point; and applying a preset pulse power source to the wafer and the nozzle and the actual polishing power source for polishing the special point being equal to the duty cycle multiplying by the preset power source.
摘要翻译：公开了用于脉冲电化学抛光晶片的方法和装置。该方法包括以下步骤：建立表示晶片上所有点的占空比表，对应于每个点的去除厚度和对应于去除厚度的占空比; 驱动晶片卡盘保持并定位晶片以预设速度移动，使得晶片上的特殊点恰好在喷射带电电解质的喷嘴上方到晶片上; 查找占空比表，获得与特殊点对应的去除厚度和占空比; 并且将预设的脉冲电源施加到晶片和喷嘴以及用于抛光特殊点的实际抛光电源等于乘以预设电源的占空比。

2. 发明授权

US09865476B2 Method and apparatus for pulse electrochemical polishing 有权
公开(公告)号：US09865476B2
公开(公告)日：2018-01-09
申请号：US14402853
申请日：2012-05-24
申请人： Jian Wang , Yinuo Jin , Jun Wang , Hui Wang
发明人： Jian Wang , Yinuo Jin , Jun Wang , Hui Wang
IPC分类号： H01L21/321 , C25F3/16 , C25F7/00 , H01L21/66 , C25F3/30
CPC分类号： H01L21/32115 , C25F3/16 , C25F3/30 , C25F7/00 , H01L22/12 , H01L22/20
摘要： A method and apparatus for pulse electrochemical polishing a wafer are disclosed. The method comprises steps of: establishing a duty cycle table showing all points on the wafer, a removal thickness corresponding to every point and a duty cycle corresponding to the removal thickness; driving a wafer chuck holding and positioning the wafer to move at a preset speed so that a special point on the wafer is right above a nozzle ejecting charged electrolyte onto the wafer; looking up the duty cycle table and obtaining the removal thickness and the duty cycle corresponding to the special point; and applying a preset pulse power source to the wafer and the nozzle and the actual polishing power source for polishing the special point being equal to the duty cycle multiplying by the preset power source.

3. 发明授权

US09724803B2 Nozzle for stress-free polishing metal layers on semiconductor wafers 有权
公开(公告)号：US09724803B2
公开(公告)日：2017-08-08
申请号：US14389540
申请日：2012-03-30
申请人： Jian Wang , Yinuo Jin , Hui Wang
发明人： Jian Wang , Yinuo Jin , Hui Wang
IPC分类号： B24C5/04 , C25F7/00 , C25F3/30
CPC分类号： B24C5/04 , C25F3/30 , C25F7/00
摘要： A nozzle for charging and ejecting electrolyte in SFP process is disclosed. The nozzle includes an insulated foundation defining a through-hole, a conductive body as negative electrode connecting with a power source for charging the electrolyte and an insulated nozzle head. The conductive body has a fixing portion located on the insulated foundation. The fixing portion forms a receiving portion inserted into the through-hole and defining a receiving hole passing therethrough. The insulated nozzle head has a cover assembled with the insulated foundation above the conductive body and a tube extending through the cover and defining a main fluid path through where the charged electrolyte is ejected for polishing. The tube is inserted in the receiving hole and stretches out of the receiving hole of the conductive body forming an auxiliary fluid path between an inner circumferential surface of the receiving portion and an outer circumferential surface of the tube.

4. 发明申请

US20150069723A1 VACUUM CHUCK 有权
标题翻译：真空罐
公开(公告)号：US20150069723A1
公开(公告)日：2015-03-12
申请号：US14389192
申请日：2012-03-28
申请人： Jian Wang , Yinuo Jin , Yong Shao , Hui Wang
发明人： Jian Wang , Yinuo Jin , Yong Shao , Hui Wang
IPC分类号： H01L21/683 , B23B31/30
CPC分类号： H01L21/6838 , B23B31/307 , B25B11/005 , H01L2221/683 , Y10T279/11
摘要： A vacuum chuck is disclosed for holding and positioning wafers more stably and securely. The vacuum chuck includes a supporting assembly having a receiving groove and at least one first vacuum aperture defined in the receiving groove. A seal unit includes a seal ring bulging to form a vacuum trough. The seal ring is fixed in the receiving groove of the supporting assembly and has at least one second vacuum aperture communicating with the first vacuum aperture. A chuck connector fastened with the supporting assembly has at least one vacuum port and at least one vacuum orifice communicating with the vacuum port. At least one vacuum hose connects the first vacuum aperture, the second vacuum aperture with the vacuum orifice and the vacuum port of the chuck connector for evacuating the air of the vacuum trough to hold and position the wafer on the seal ring and the supporting assembly.
摘要翻译：公开了用于更稳定和可靠地保持和定位晶片的真空卡盘。真空吸盘包括支撑组件，其具有容纳凹槽和限定在容纳凹槽中的至少一个第一真空孔。密封单元包括凸起形成真空槽的密封环。密封环固定在支撑组件的接收槽中，并且具有与第一真空孔连通的至少一个第二真空孔。紧固有支撑组件的卡盘连接器具有至少一个真空口和至少一个与真空口连通的真空孔。至少一个真空软管将第一真空孔，第二真空孔与真空孔连接，并且夹持连接器的真空端口用于抽空真空槽的空气，以将晶片保持并定位在密封环和支撑组件上。

5. 发明授权

US09558985B2 Vacuum chuck 有权
标题翻译：真空吸盘
公开(公告)号：US09558985B2
公开(公告)日：2017-01-31
申请号：US14389192
申请日：2012-03-28
申请人： Jian Wang , Yinuo Jin , Yong Shao , Hui Wang
发明人： Jian Wang , Yinuo Jin , Yong Shao , Hui Wang
IPC分类号： B23B31/30 , H01L21/683 , B25B11/00
CPC分类号： H01L21/6838 , B23B31/307 , B25B11/005 , H01L2221/683 , Y10T279/11
摘要： A vacuum chuck is disclosed for holding and positioning wafers more stably and securely. The vacuum chuck includes a supporting assembly having a receiving groove and at least one first vacuum aperture defined in the receiving groove. A seal unit includes a seal ring bulging to form a vacuum trough. The seal ring is fixed in the receiving groove of the supporting assembly and has at least one second vacuum aperture communicating with the first vacuum aperture. A chuck connector fastened with the supporting assembly has at least one vacuum port and at least one vacuum orifice communicating with the vacuum port. At least one vacuum hose connects the first vacuum aperture, the second vacuum aperture with the vacuum orifice and the vacuum port of the chuck connector for evacuating the air of the vacuum trough to hold and position the wafer on the seal ring and the supporting assembly.
摘要翻译：公开了用于更稳定和可靠地保持和定位晶片的真空卡盘。真空吸盘包括支撑组件，其具有容纳凹槽和限定在容纳凹槽中的至少一个第一真空孔。密封单元包括凸起形成真空槽的密封环。密封环固定在支撑组件的接收槽中，并且具有与第一真空孔连通的至少一个第二真空孔。紧固有支撑组件的卡盘连接器具有至少一个真空口和至少一个与真空口连通的真空孔。至少一个真空软管将第一真空孔，第二真空孔与真空孔连接，并且夹持连接器的真空端口用于抽空真空槽的空气，以将晶片保持并定位在密封环和支撑组件上。

6. 发明申请

US20150072599A1 NOZZLE FOR STRESS-FREE POLISHING METAL LAYERS ON SEMICONDUCTOR WAFERS 有权
标题翻译：用于无应力抛光金属层的喷嘴在半导体波导上
公开(公告)号：US20150072599A1
公开(公告)日：2015-03-12
申请号：US14389540
申请日：2012-03-30
申请人： Jian Wang , Yinuo Jin , Hui Wang
发明人： Jian Wang , Yinuo Jin , Hui Wang
IPC分类号： B24C5/04
CPC分类号： B24C5/04 , C25F3/30 , C25F7/00
摘要： A nozzle for charging and ejecting electrolyte in SFP process is disclosed. The nozzle includes an insulated foundation defining a through-hole, a conductive body as negative electrode connecting with a power source for charging the electrolyte and an insulated nozzle head. The conductive body has a fixing portion located on the insulated foundation. The fixing portion protrudes to form a receiving portion inserted into the through-hole and defining a receiving hole passing therethrough and the fixing portion. The insulated nozzle head has a cover stably assembled with the insulated foundation above the conductive body and a tube extending through the cover and defining a main fluid path through where the charged electrolyte is ejected for polishing. The tube is inserted in the receiving hole and stretches out of the receiving hole of the conductive body. An auxiliary fluid path is formed between an inner circumferential surface of the receiving portion and an outer circumferential surface of the tube.
摘要翻译：公开了一种用于在SFP工艺中充电和喷射电解质的喷嘴。喷嘴包括限定通孔的绝缘基座，与用于对电解质充电的电源连接的负极的导电体和绝缘喷嘴头。导电体具有位于绝缘基底上的固定部分。固定部分突出以形成插入到通孔中的接收部分，并且限定穿过其中的接收孔和固定部分。绝缘喷嘴头具有与导电体上方的绝缘基底稳定地组装的盖，以及延伸穿过盖并且限定主要流体路径的管，通过其中喷射带电电解质用于抛光的主流体路径。该管插入接收孔中，并延伸出导电体的接收孔。在容纳部的内周面和管的外周面之间形成辅助流路。

7. 发明申请

US20120097195A1 Methods and Apparatus for Cleaning Semiconductor Wafers 有权
标题翻译：用于清洁半导体晶片的方法和装置
公开(公告)号：US20120097195A1
公开(公告)日：2012-04-26
申请号：US13262264
申请日：2009-03-31
申请人： Jian Wang , Sunny Voha Nuch , Liangzhi Xie , Junping Wu , Zhaowei Jia , Yunwen Huang , Zhifeng Gao , Yue Ma , Hui Wang
发明人： Jian Wang , Sunny Voha Nuch , Liangzhi Xie , Junping Wu , Zhaowei Jia , Yunwen Huang , Zhifeng Gao , Yue Ma , Hui Wang
IPC分类号： B08B3/00
CPC分类号： H01L21/02068 , B08B3/12 , H01L21/02063 , H01L21/67051
摘要： A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or count clockwise.
摘要翻译：一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和超声波/超声波装置，通过顺时针旋转半导体衬底或超/超声波装置，顺时针或顺时针方向计数，在清洁过程中，通过卡盘的每次旋转来改变半导体衬底和超/超声波装置之间的间隙。

8. 发明申请

US20110290277A1 Methods and Apparatus for Cleaning Semiconductor Wafers 有权
标题翻译：用于清洁半导体晶片的方法和装置
公开(公告)号：US20110290277A1
公开(公告)日：2011-12-01
申请号：US13133826
申请日：2008-12-12
申请人： Jian Wang , Sunny Voha Nuch , Liangzhi Xie , Junping Wu , Zhaowei Jia , Yunwen Huang , Zhifeng Gao , Hui Wang
发明人： Jian Wang , Sunny Voha Nuch , Liangzhi Xie , Junping Wu , Zhaowei Jia , Yunwen Huang , Zhifeng Gao , Hui Wang
IPC分类号： B08B3/12
CPC分类号： H01L21/67051 , B08B3/08 , B08B3/12 , B08B3/123 , H01L21/02063 , H01L21/67023 , H01L21/6708
摘要： A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5λ/N for each rotation of the chuck, where λ is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5λn during the cleaning process, where λ is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.
摘要翻译：一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和超声波/超声波装置，在清洁过程中，对于卡盘的每次旋转，改变半导体衬底和超/超声波装置之间的间隙。对于卡盘的每次旋转，间隙可以增加或减小0.5λ/ N，其中λ是超/兆声波的波长，N是2和1000之间的整数。间隙在0.5λn的范围内变化在清洁过程中，其中λ是超/兆声波的波长，n是从1开始的整数。

9. 发明申请

US20110177692A1 Barrier Layer Removal Method and Apparatus 有权
标题翻译：阻隔层去除方法和装置
公开(公告)号：US20110177692A1
公开(公告)日：2011-07-21
申请号：US13059814
申请日：2008-08-20
申请人： Jian Wang , Zhaowei Jia , Junping Wu , Liangzhi Xie , Hui Wang
发明人： Jian Wang , Zhaowei Jia , Junping Wu , Liangzhi Xie , Hui Wang
IPC分类号： H01L21/465 , C25D19/00
CPC分类号： H01L21/67069 , H01L21/02074 , H01L21/32115 , H01L21/32135 , H01L21/67075
摘要： This invention relates to a method and apparatus by integrating semiconductor manufacturing processes of stress free electrochemical copper polishing (SFP), removal of the Tantalum oxide or Titanium oxide formed during SFP process and XeF2 gas phase etching barrier layer Ta/TaN or Ti/TiN process. Firstly, at least portion of plated copper film is polished by SFP. Secondly the barrier metal oxide film formed during SFP process is etched away by etchant. Finally, the barrier layer Ta/TaN or Ta/TiN is removed with XeF2 gas phase etching. The apparatus accordingly consists of three sub systems: stress free copper electropolishing system, barrier layer oxide film removal system and barrier layer Ta/TaN or Ti/TiN gas phase etching system.
摘要翻译：本发明涉及通过集成无应力电化学铜抛光（SFP）的半导体制造工艺，去除在SFP工艺期间形成的氧化钽或氧化钛和XeF 2气相蚀刻阻挡层Ta / TaN或Ti / TiN工艺的方法和装置。首先，通过SFP抛光电镀铜膜的至少一部分。其次，在SFP工艺期间形成的阻挡金属氧化物膜被蚀刻剂蚀刻掉。最后，用XeF2气相蚀刻除去阻挡层Ta / TaN或Ta / TiN。因此该装置由三个子系统组成：无应力铜电解抛光系统，阻挡层氧化膜去除系统和阻挡层Ta / TaN或Ti / TiN气相蚀刻系统。

10. 发明申请

US20070125661A1 Controlling removal rate uniformity of an electropolishing process in integrated circuit fabrication 审中-公开
标题翻译：控制集成电路制造中电解抛光工艺的去除率均匀性
公开(公告)号：US20070125661A1
公开(公告)日：2007-06-07
申请号：US10590460
申请日：2005-02-23
申请人： Hui Wang , Afnan Muhammed , Jian Wang , Felix Gutman , Frederick Ho , Himanshu Chocshi
发明人： Hui Wang , Afnan Muhammed , Jian Wang , Felix Gutman , Frederick Ho , Himanshu Chocshi
IPC分类号： B23H3/00
CPC分类号： B23H5/08 , B24B37/04 , C25F3/02 , C25F5/00 , C25F7/00 , H01L21/32115
摘要： A metal layer formed on a wafer, the wafer having a center portion and an edge portion, is electropolished by aligning a nozzle and the wafer to position the nozzle adjacent to the center portion of the wafer. The wafer is rotated. As the wafer is rotated, a stream of electrolyte is applied from the nozzle onto a portion of the metal layer adjacent to the center portion of the wafer to begin to electropolish the portion of the metal layer with a triangular polishing profile to initially expose an underlying layer underneath the metal layer at a point.
摘要翻译：在晶片上形成的金属层（具有中心部分和边缘部分的晶片）通过对准喷嘴和晶片以将喷嘴定位成与晶片的中心部分相邻来进行电抛光。晶圆旋转。当晶片旋转时，电解质流从喷嘴施加到与晶片的中心部分相邻的金属层的一部分上，以开始以三角抛光轮廓对金属层的部分进行电解抛光，以最初暴露下面的在一点上金属层下方的层。

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