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1. 发明申请

US20110198652A1 LOW RESISTANCE ELECTRODE AND COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME 失效
标题翻译：低电阻电极和化合物半导体发光器件，包括它们
公开(公告)号：US20110198652A1
公开(公告)日：2011-08-18
申请号：US13095487
申请日：2011-04-27
申请人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
发明人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
IPC分类号： H01L33/60 , B82Y99/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/32
摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.
摘要翻译：提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

2. 发明申请

US20050145876A1 Low resistance electrode and compound semiconductor light emitting device including the same 失效
标题翻译：低电阻电极和包括其的化合物半导体发光器件
公开(公告)号：US20050145876A1
公开(公告)日：2005-07-07
申请号：US10979240
申请日：2004-11-03
申请人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
发明人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
IPC分类号： H01L21/285 , H01L29/20 , H01L29/45 , H01L33/32 , H01L33/42 , H01L29/24
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/32
摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.
摘要翻译：提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

3. 发明授权

US07960746B2 Low resistance electrode and compound semiconductor light emitting device including the same 失效
标题翻译：低电阻电极和包括其的化合物半导体发光器件
公开(公告)号：US07960746B2
公开(公告)日：2011-06-14
申请号：US10979240
申请日：2004-11-03
申请人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
发明人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
IPC分类号： H01L33/00 , H01L23/48 , H01L23/52 , H01L23/40 , H01L21/00 , H01L21/28 , H01L21/3205 , H01L21/44
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/32
摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.
摘要翻译：提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

4. 发明申请

US20060270206A1 Method of forming ohmic contact layer and method of fabricating light emitting device having ohmic contact layer 有权
公开(公告)号：US20060270206A1
公开(公告)日：2006-11-30
申请号：US11435827
申请日：2006-05-18
申请人： Jae-hee Cho , Dong-seok Leem , Tae-yeon Seong , Cheol-soo Sone
发明人： Jae-hee Cho , Dong-seok Leem , Tae-yeon Seong , Cheol-soo Sone
IPC分类号： H01L21/44
CPC分类号： H01L33/42 , H01L33/22 , H01L33/32 , H01L33/38 , H01L2933/0016
摘要： A method of manufacturing an ohmic contact layer and a method of manufacturing a top emission type nitride-based light emitting device having the ohmic contact layer are provided. The method of manufacturing an ohmic contact layer includes: forming a first conductive material layer on a semiconductor layer; forming a mask layer having a plurality of nano-sized islands on the first conductive material layer; forming a second conductive material layer on the first conductive material layer and the mask layer; and removing the portion of the second conductive material on the islands and the islands through a lift-off process using a solvent. The method ensures the maintenance of good electrical characteristics and an increase of the light extraction efficiency.

5. 发明授权

US08580668B2 Method of forming ohmic contact layer and method of fabricating light emitting device having ohmic contact layer 有权
标题翻译：形成欧姆接触层的方法和制造具有欧姆接触层的发光器件的方法
公开(公告)号：US08580668B2
公开(公告)日：2013-11-12
申请号：US11435827
申请日：2006-05-18
申请人： Jae-hee Cho , Dong-seok Leem , Tae-yeon Seong , Cheol-soo Sone
发明人： Jae-hee Cho , Dong-seok Leem , Tae-yeon Seong , Cheol-soo Sone
IPC分类号： H01L21/44
CPC分类号： H01L33/42 , H01L33/22 , H01L33/32 , H01L33/38 , H01L2933/0016
摘要： A method of manufacturing an ohmic contact layer and a method of manufacturing a top emission type nitride-based light emitting device having the ohmic contact layer are provided. The method of manufacturing an ohmic contact layer includes: forming a first conductive material layer on a semiconductor layer; forming a mask layer having a plurality of nano-sized islands on the first conductive material layer; forming a second conductive material layer on the first conductive material layer and the mask layer; and removing the portion of the second conductive material on the islands and the islands through a lift-off process using a solvent. The method ensures the maintenance of good electrical characteristics and an increase of the light extraction efficiency.
摘要翻译：提供一种制造欧姆接触层的方法和制造具有欧姆接触层的顶部发射型氮化物基发光器件的方法。制造欧姆接触层的方法包括：在半导体层上形成第一导电材料层; 在所述第一导电材料层上形成具有多个纳米尺寸岛的掩模层; 在所述第一导电材料层和所述掩模层上形成第二导电材料层; 以及通过使用溶剂的剥离过程去除岛岛上的第二导电材料的部分。该方法确保维持良好的电气特性并提高光提取效率。

6. 发明授权

US08952389B2 Light emitting diode and method for fabricating the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08952389B2
公开(公告)日：2015-02-10
申请号：US13471154
申请日：2012-05-14
申请人： Joon-seop Kwak , Jae-hee Cho
发明人： Joon-seop Kwak , Jae-hee Cho
IPC分类号： H01L33/40 , H01L33/50 , H01L33/20
CPC分类号： H01L33/007 , H01L33/0095 , H01L33/20 , H01L33/508 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/8592 , H01L2924/181 , H01L2933/0041 , H01L2924/00014 , H01L2924/00012
摘要： A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.
摘要翻译：提供一种发光二极管及其制造方法。发光二极管包括：透明基板; 半导体材料层，形成在具有产生光的有源层的基板的顶表面上; 以及在受控变化的厚度的基板的背面上形成的荧光层。可以通过调节荧光层的厚度来控制波长在荧光层中传播的光与在有源层中产生的原始光的比例，从发光二极管发出期望的均匀白光。

7. 发明授权

US08435813B2 Light emitting device and method of manufacturing the same 失效
标题翻译：发光元件及其制造方法
公开(公告)号：US08435813B2
公开(公告)日：2013-05-07
申请号：US13438323
申请日：2012-04-03
申请人： Joon-seop Kwak , Jae-hee Cho
发明人： Joon-seop Kwak , Jae-hee Cho
IPC分类号： H01L21/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括透明衬底，在透明衬底上形成的n型化合物半导体层，顺序地形成在n型化合物半导体层的第一区域上的有源层，p型化合物半导体层和p型电极，和形成在与n型化合物半导体层的第一区域分离的第二区域上的n型电极，其中p型电极包括第一和第二电极，每个电极具有不同的电阻和反射率。

8. 发明申请

US20050062051A1 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20050062051A1
公开(公告)日：2005-03-24
申请号：US10940748
申请日：2004-09-15
申请人： Joon-seop Kwak , Jae-hee Cho
发明人： Joon-seop Kwak , Jae-hee Cho
IPC分类号： H01L33/32 , H01L33/40 , H01L29/06
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括透明衬底，在透明衬底上形成的n型化合物半导体层，顺序地形成在n型化合物半导体层的第一区域上的有源层，p型化合物半导体层和p型电极，和形成在与n型化合物半导体层的第一区域分离的第二区域上的n型电极，其中p型电极包括第一和第二电极，每个电极具有不同的电阻和反射率。

9. 发明授权

US08536604B2 Light emitting diode and method for fabricating the same 有权
公开(公告)号：US08536604B2
公开(公告)日：2013-09-17
申请号：US13188297
申请日：2011-07-21
申请人： Joon-seop Kwak , Jae-hee Cho
发明人： Joon-seop Kwak , Jae-hee Cho
IPC分类号： H01L33/02
CPC分类号： H01L33/007 , H01L33/0095 , H01L33/20 , H01L33/508 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/8592 , H01L2924/181 , H01L2933/0041 , H01L2924/00014 , H01L2924/00012
摘要： A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.

10. 发明申请

US20090325334A1 GaN BASED GROUP III-V NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR FABRICATING THE SAME 失效
标题翻译： GaN基III-V族氮化物半导体发光二极管及其制造方法
公开(公告)号：US20090325334A1
公开(公告)日：2009-12-31
申请号：US12495000
申请日：2009-06-30
申请人： Joon-seop Kwak , Kyo-yeol Lee , Jae-hee Cho , Su-hee Chae
发明人： Joon-seop Kwak , Kyo-yeol Lee , Jae-hee Cho , Su-hee Chae
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/0079 , H01L33/38 , H01L33/382 , H01L33/46 , H01L33/641 , H01L2933/0016 , H01S5/0207 , H01S5/021 , H01S5/0217 , H01S5/024 , H01S5/02461 , H01S5/02476 , H01S5/0424 , H01S5/0425 , H01S5/34333 , Y10S438/928
摘要： A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.
摘要翻译：提供一种GaN基III-V族氮化物半导体发光器件及其制造方法。在GaN基III-V族氮化物半导体发光器件中，包括面向相反方向或相同方向的第一和第二电极，其间具有耐高压衬底和用于发光或发光的材料层，第二电极直接接触最外层的材料层通过高阻基板的蚀刻区域露出。可以在高阻基板的底部上形成导热层以覆盖最外层材料层的暴露区域。

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