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1. 发明授权

US08405109B2 Low resistance electrode and compound semiconductor light emitting device including the same 失效
标题翻译：低电阻电极和包括其的化合物半导体发光器件
公开(公告)号：US08405109B2
公开(公告)日：2013-03-26
申请号：US13095487
申请日：2011-04-27
申请人： Joon Seop Kwak , Tae Yeon Seong , Jae Hee Cho , June-o Song , Dong Seok Leem , Hyun Soo Kim
发明人： Joon Seop Kwak , Tae Yeon Seong , Jae Hee Cho , June-o Song , Dong Seok Leem , Hyun Soo Kim
IPC分类号： H01L33/00 , H01L23/48 , H01L23/52 , H01L23/40 , H01L21/00 , H01L21/28 , H01L21/3205 , H01L21/44
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/32
摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.
摘要翻译：提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

2. 发明申请

US20110198652A1 LOW RESISTANCE ELECTRODE AND COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME 失效
标题翻译：低电阻电极和化合物半导体发光器件，包括它们
公开(公告)号：US20110198652A1
公开(公告)日：2011-08-18
申请号：US13095487
申请日：2011-04-27
申请人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
发明人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
IPC分类号： H01L33/60 , B82Y99/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/32
摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.
摘要翻译：提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

3. 发明申请

US20050145876A1 Low resistance electrode and compound semiconductor light emitting device including the same 失效
标题翻译：低电阻电极和包括其的化合物半导体发光器件
公开(公告)号：US20050145876A1
公开(公告)日：2005-07-07
申请号：US10979240
申请日：2004-11-03
申请人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
发明人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
IPC分类号： H01L21/285 , H01L29/20 , H01L29/45 , H01L33/32 , H01L33/42 , H01L29/24
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/32
摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.
摘要翻译：提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

4. 发明授权

US07960746B2 Low resistance electrode and compound semiconductor light emitting device including the same 失效
标题翻译：低电阻电极和包括其的化合物半导体发光器件
公开(公告)号：US07960746B2
公开(公告)日：2011-06-14
申请号：US10979240
申请日：2004-11-03
申请人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
发明人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
IPC分类号： H01L33/00 , H01L23/48 , H01L23/52 , H01L23/40 , H01L21/00 , H01L21/28 , H01L21/3205 , H01L21/44
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/32
摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.
摘要翻译：提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

5. 发明授权

US07285857B2 GaN-based III—V group compound semiconductor device and p-type electrode for the same 有权
标题翻译： GaN基III-V族化合物半导体器件和p型电极
公开(公告)号：US07285857B2
公开(公告)日：2007-10-23
申请号：US10953282
申请日：2004-09-30
申请人： Joon-seop Kwak , Tae-yeon Seong , Ok-hyun Nam , June-o Song , Dong-seok Leem
发明人： Joon-seop Kwak , Tae-yeon Seong , Ok-hyun Nam , June-o Song , Dong-seok Leem
IPC分类号： H01L29/45 , H01L33/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32
摘要： Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.
摘要翻译：提供了使用该p型电极和III-V族GaN基化合物半导体器件。电极包括设置在III-V族氮化物化合物半导体层上并由含有溶质的Zn基材料形成的第一层; 以及层叠在第一层上并由选自Au，Co，Pd，Pt，Ru，Rh，Ir，Ta，Cr，Mn，Mo，Tc，W，Re，Fe中的至少一种形成的第二层，Sc，Ti，Sn，Ge，Sb，Al，ITO和ZnO。 Zn基p型电极具有优异的电学，光学和热学特性。

6. 发明申请

US20050212006A1 GaN-based III - V group compound semiconductor light emitting device and method of fabricating the same 审中-公开
标题翻译： GaN基III-V族化合物半导体发光器件及其制造方法
公开(公告)号：US20050212006A1
公开(公告)日：2005-09-29
申请号：US10978426
申请日：2004-11-02
申请人： Joon-seop Kwak , Tae-yeon Seong , June-o Song , Dong-seok Leem
发明人： Joon-seop Kwak , Tae-yeon Seong , June-o Song , Dong-seok Leem
IPC分类号： H01L21/28 , H01L33/32 , H01L33/42 , H01L29/15
CPC分类号： H01L33/32 , H01L33/40
摘要： Provided are a GaN-based III-V group compound semiconductor light emitting device and a method of fabricating the GaN-based III-V group compound semiconductor light emitting device. The GaN-based III-V group compound semiconductor light emitting device includes: at least an n-type compound semiconductor layer, an active layer, and a p-type compound semiconductor layer, which are disposed between an n-type electrode and a p-type electrode. The p-type electrode includes a first electrode layer which is formed of Ag or an Ag-alloy on the p-type GaN-based compound semiconductor layer and a second electrode which is formed of at least one selected from the group consisting of Ni, Ni-alloy, Zn, Zn-alloy, Cu, Cu-alloy, Ru, Ir, and Rh on the first electrode layer.
摘要翻译：提供了一种基于GaN的III-V族化合物半导体发光器件和制造GaN基III-V族化合物半导体发光器件的方法。 GaN基III-V族化合物半导体发光器件包括：至少n型化合物半导体层，有源层和p型化合物半导体层，其设置在n型电极和p型型电极。 p型电极包括由p型GaN基化合物半导体层上的Ag或Ag合金形成的第一电极层和由选自Ni， Ni合金，Zn，Zn合金，Cu，Cu合金，Ru，Ir和Rh。

7. 发明申请

US20050087758A1 GaN-based III - V group compound semiconductor device and p-type electrode for the same 有权
标题翻译： GaN基III-V族化合物半导体器件和p型电极相同
公开(公告)号：US20050087758A1
公开(公告)日：2005-04-28
申请号：US10953282
申请日：2004-09-30
申请人： Joon-seop Kwak , Tae-yeon Seong , Ok-hyun Nam , June-o Song , Dong-seok Leem
发明人： Joon-seop Kwak , Tae-yeon Seong , Ok-hyun Nam , June-o Song , Dong-seok Leem
IPC分类号： H01L21/285 , H01L29/20 , H01L29/45 , H01L33/32 , H01L33/42 , H01S5/042 , H01S5/323 , H01L33/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32
摘要： Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.
摘要翻译：提供了使用该p型电极和III-V族GaN基化合物半导体器件。电极包括设置在III-V族氮化物化合物半导体层上并由含有溶质的Zn基材料形成的第一层; 以及层叠在第一层上并由选自Au，Co，Pd，Pt，Ru，Rh，Ir，Ta，Cr，Mn，Mo，Tc，W，Re，Fe中的至少一种形成的第二层，Sc，Ti，Sn，Ge，Sb，Al，ITO和ZnO。 Zn基p型电极具有优异的电学，光学和热学特性。

8. 发明授权

US07205576B2 Light emitting device and method of manufacturing the same 有权
公开(公告)号：US07205576B2
公开(公告)日：2007-04-17
申请号：US10930915
申请日：2004-09-01
申请人： June-o Song , Dong-seok Leem , Tae-yeon Seong
发明人： June-o Song , Dong-seok Leem , Tae-yeon Seong
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42 , H01L2933/0016
摘要： A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate, an n-type clad layer, a light emitting layer, a p-type clad layer, an ohmic contact layer, and a reflective layer are successively stacked. The ohmic contact layer is formed by adding an additional element to an indium oxide. According to the light emitting device and the method of manufacturing the same, the characteristics of ohmic contact with a p-type clad layer is improved, thus increasing the efficiency and yield of wire bonding during packaging FCLEDS. Also, it is possible to increase the light emitting efficiency and life span of light emitting devices due to the low contactless resistance and the excellent electric current and voltage characteristic.

9. 发明授权

US07180094B2 Nitride-based light emitting device and method of manufacturing the same 有权
标题翻译：氮化物基发光器件及其制造方法
公开(公告)号：US07180094B2
公开(公告)日：2007-02-20
申请号：US10957704
申请日：2004-10-05
申请人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
发明人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
IPC分类号： H01L29/04
CPC分类号： H01L33/42 , H01L33/32 , H01L33/405 , H01L2933/0016
摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I–V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.
摘要翻译：提供一种氮化物系发光器件及其制造方法。氮化物系发光器件具有在衬底上依次形成至少n包层，有源层和p包层的结构。发光装置还包括由含有含锌（Zn）的氧化物构成的欧姆接触层，该氧化物含有形成在p包覆层上的p型掺杂剂。制造氮化物系发光器件的方法包括在p包覆层上形成由含有p型掺杂剂的含Zn氧化物构成的欧姆接触层，形成欧姆接触层并退火所得到的结构。基于氮化物的发光器件和制造方法通过改善与p型覆层的欧姆接触而提供优异的I-V特性，同时由于透明电极的高透光率而显着提高了器件的发光效率。

10. 发明申请

US20050133809A1 Top-emitting nitride-based light emitting device and method of manufacturing the same 有权
标题翻译：顶部发射氮化物基发光器件及其制造方法
公开(公告)号：US20050133809A1
公开(公告)日：2005-06-23
申请号：US11011154
申请日：2004-12-15
申请人： June-o Song , Tae-yeon Seong , Joon-seop Kwak , Woong-ki Hong
发明人： June-o Song , Tae-yeon Seong , Joon-seop Kwak , Woong-ki Hong
IPC分类号： H01L21/28 , H01L33/06 , H01L33/32 , H01L33/42 , H01L23/48
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.
摘要翻译：提供了一种顶发射N型发光器件及其制造方法。该器件包括依次层叠的衬底，n型覆盖层，有源层，p型覆盖层和多欧姆接触层。多欧姆接触层包括一个或多个堆叠结构，每个层叠结构包括重复堆叠在p型覆盖层上的改性金属层和透明导电薄膜层。改性金属层由Ag基材料形成。

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