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1. 发明授权

US08279675B2 Nonvolatile memory device and method of programming the same 失效
标题翻译：非易失存储器件及其编程方法
公开(公告)号：US08279675B2
公开(公告)日：2012-10-02
申请号：US12621873
申请日：2009-11-19
申请人： Ju Yeab Lee , Keon Soo Shim
发明人： Ju Yeab Lee , Keon Soo Shim
IPC分类号： G11C16/04
CPC分类号： G11C16/3454 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C2211/5621 , G11C2211/5642
摘要： A nonvolatile memory device including a bit line voltage supply unit configured to supply a power source voltage, a second voltage in which a second reference voltage has been subtracted from a third reference voltage, or a third voltage in which a first reference voltage has been subtracted from the third reference voltage according to data stored in a first latch unit, a second latch unit, and a third latch unit included in a page buffer, and a bit line voltage setting unit configured to transfer a voltage of 0 V or an output voltage of the bit line voltage supply unit to a bit line according to the data stored in the first, second, and third latch units.
摘要翻译：一种非易失性存储器件，包括：位线电压供给单元，被配置为提供电源电压，从第三参考电压减去第二参考电压的第二电压或者减去第一参考电压的第三电压根据存储在第一锁存单元中的数据的第三参考电压，包括在页缓冲器中的第二锁存单元和第三锁存单元，以及位线电压设置单元，被配置为传送0V的电压或输出电压根据存储在第一，第二和第三锁存单元中的数据，将位线电压供应单元的位线移动到位线。

2. 发明授权

US07561474B2 Program verifying method and programming method of flash memory device 有权
标题翻译：闪存设备的程序验证方法和编程方法
公开(公告)号：US07561474B2
公开(公告)日：2009-07-14
申请号：US11965552
申请日：2007-12-27
申请人： Ju In Kim , Ju Yeab Lee
发明人： Ju In Kim , Ju Yeab Lee
IPC分类号： G11C11/34
CPC分类号： G11C16/3436
摘要： A duel program verify operation is performed using first and second verify voltages. In order to reduce the width of a threshold voltage distribution during an incremental step pulse program implementation, data of a corresponding memory cell are verified twice using the first verify voltage and the second verify voltage. During a second verify operation using the second verify voltage, a sensing current is adjusted by controlling voltages applied as a bit line select signal and an evaluation time period. Therefore, the threshold voltage of the memory cell can be measured higher or lower than its actual value and the width of a threshold voltage distribution is reduced.
摘要翻译：使用第一和第二验证电压执行对战程序验证操作。为了在增量步进脉冲程序实现期间减小阈值电压分布的宽度，使用第一验证电压和第二验证电压来验证相应的存储器单元的数据两次。在使用第二验证电压的第二验证操作期间，通过控制作为位线选择信号和评估时间段施加的电压来调节感测电流。因此，可以将存储单元的阈值电压测量为高于或低于其实际值，并且减小阈值电压分布的宽度。

3. 发明授权

US07193897B2 NAND flash memory device capable of changing a block size 有权
标题翻译： NAND闪存器件能够改变块大小
公开(公告)号：US07193897B2
公开(公告)日：2007-03-20
申请号：US11182566
申请日：2005-07-15
申请人： Ju Yeab Lee
发明人： Ju Yeab Lee
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/20 , G11C7/1021 , G11C16/0483 , G11C16/16 , G11C2216/18
摘要： Disclosed herein is a NAND flash memory device capable of changing a block size. In NAND flash memory devices capable of changing a block size, each memory block is divided into two page groups. Each memory block includes two block switches to select each page group in response to an external address signal. During an erasing operation, the block size is easily variable by applying an erasure voltage to one or two page groups.
摘要翻译：本文公开了能够改变块大小的NAND闪存器件。在能够改变块大小的NAND闪存器件中，每个存储块被分成两个页组。每个存储块包括两个块开关，以响应于外部地址信号来选择每个页组。在擦除操作期间，通过对一个或两个页组施加擦除电压，块大小容易变化。

4. 发明授权

US08351267B2 Method of programming nonvolatile memory device 失效
标题翻译：非易失性存储器件编程方法
公开(公告)号：US08351267B2
公开(公告)日：2013-01-08
申请号：US12827754
申请日：2010-06-30
申请人： Seung Hwan Baik , Ju Yeab Lee
发明人： Seung Hwan Baik , Ju Yeab Lee
IPC分类号： G11C16/04
CPC分类号： G11C16/3418 , G11C11/5628
摘要： A method of programming a nonvolatile memory device comprises performing a first program operation on first memory cells and second memory cells so that threshold voltages of the first and second memory cells have a first reference level lower than a first target level, the first memory cells having the first target level as a first target level, and the second memory cells having a second target level higher than the first target level as a second target level; performing a second program operation on the second memory cells so that the threshold voltages of the second memory cells have a second reference level lower than the second target level; and performing a third program operation on the first and second memory cells to have the respective target levels.
摘要翻译：一种对非易失性存储器件进行编程的方法包括：对第一存储器单元和第二存储器单元执行第一程序操作，使得第一和第二存储器单元的阈值电压具有低于第一目标电平的第一参考电平，第一存储器单元具有所述第一目标级别作为第一目标级别，并且所述第二存储器单元具有比所述第一目标级别高的第二目标级别作为第二目标级别; 对所述第二存储器单元执行第二编程操作，使得所述第二存储器单元的阈值电压具有低于所述第二目标电平的第二参考电平; 以及对所述第一和第二存储器单元执行第三程序操作以具有各自的目标电平。

5. 发明授权

US08270221B2 Nonvolatile memory device and method of operating the same 有权
标题翻译：非易失存储器件及其操作方法
公开(公告)号：US08270221B2
公开(公告)日：2012-09-18
申请号：US12780192
申请日：2010-05-14
申请人： Ju Yeab Lee
发明人： Ju Yeab Lee
IPC分类号： G11C16/06
CPC分类号： G11C16/3418 , G11C16/0483 , G11C16/06 , H01L27/11521
摘要： A nonvolatile memory device includes a cell string, including a drain select transistor coupled to a bit line, a source select transistor coupled to a common source line, and memory cells coupled in series between the drain select transistor and the source select transistor, a latch unit, including a first latch for storing a detection result of a threshold voltage of a second memory cell adjacent to a first memory cell selected from among the memory cells and a second latch for storing a detection result of a threshold voltage of the first memory cell, and a first reset unit electrically coupled between the first and second latches and configured to reset the second latch, during a time in which a read operation is performed on the first memory cell, in response to a first reset signal and the detection result stored in the first latch.
摘要翻译：非易失性存储器件包括一个单元串，包括耦合到位线的漏极选择晶体管，耦合到公共源极线的源极选择晶体管和串联耦合在漏极选择晶体管和源极选择晶体管之间的存储单元，单元，包括用于存储与从所述存储单元中选择的第一存储单元相邻的第二存储单元的阈值电压的检测结果的第一锁存器和用于存储所述第一存储器单元的阈值电压的检测结果的第二锁存器以及电耦合在第一和第二锁存器之间并且被配置为在对第一存储器单元执行读取操作的时间期间复位第二锁存器的第一复位单元，响应于第一复位信号和存储的检测结果在第一个闩锁。

6. 发明授权

US07623385B2 Method of reading flash memory device for depressing read disturb 有权
标题翻译：读取闪存设备以抑制读取干扰的方法
公开(公告)号：US07623385B2
公开(公告)日：2009-11-24
申请号：US11965191
申请日：2007-12-27
申请人： Nam Kyeong Kim , Ju Yeab Lee , Keum Hwan Noh
发明人： Nam Kyeong Kim , Ju Yeab Lee , Keum Hwan Noh
IPC分类号： G11C11/34
CPC分类号： G11C16/3418 , G11C16/0483 , G11C16/3427
摘要： Provided is a method of reading a flash memory device for depressing read disturb. According to the method, a first voltage is applied to a gate of the drain select transistor to turn on the drain select transistor, and a read voltage is applied to a gate of a selected transistor among the plurality of memory cells. Then, a pass voltage is applied to gates of unselected transistors among the plurality of memory cells. Furthermore, when the pass voltage is applied, a first pass voltage is applied and then a second pass voltage is applied after an elapse of a predetermined time following the applying of the first pass voltage. The second pass voltage has a level different from that of the first pass voltage.
摘要翻译：提供了一种读取用于按下读取干扰的闪速存储器件的方法。根据该方法，将第一电压施加到漏极选择晶体管的栅极以使漏极选择晶体管导通，并且将读取电压施加到多个存储单元中的选定晶体管的栅极。然后，对多个存储单元中的未选择晶体管的栅极施加通过电压。此外，当施加通过电压时，施加第一通过电压，然后在施加第一通过电压之后经过预定时间之后施加第二通过电压。第二通过电压具有与第一通过电压不同的电平。

7. 发明授权

US07046554B2 Page buffer of flash memory device and data program method using the same 有权
标题翻译：闪存设备的页面缓冲区和使用它的数据程序方法
公开(公告)号：US07046554B2
公开(公告)日：2006-05-16
申请号：US11009749
申请日：2004-12-10
申请人： Ju Yeab Lee
发明人： Ju Yeab Lee
IPC分类号： G11C16/04
CPC分类号： G11C16/10 , G11C2216/14
摘要： Disclosed are a page buffer of a flash memory device and data program method using the same. After two data are sequentially stored in a main register (first latch) and a cache register (second latch) provided in a page buffer, they are respectively transferred to an even bit line and an odd bit line at the same time, and a bias needed for a program is applied to cells connected to the even bit line and the odd bit line, respectively, whereby the program is performed at the same time. Therefore, the number and time of operations for data loading, program operation and program verification can be reduced by half and the operating speed of the device can be improved.
摘要翻译：公开了闪速存储器件的页面缓冲器和使用其的数据程序方法。在将两个数据顺次存储在页缓冲器中提供的主寄存器（第一锁存器）和高速缓存寄存器（第二锁存器）中之后，它们分别被同时传送到偶位线和奇数位线，偏置将节目所需的分别应用于连接到偶位线和奇数位线的单元，从而同时执行程序。因此，可以将数据加载，程序操作和程序验证的操作次数和时间减少一半，并且可以提高设备的操作速度。

8. 发明授权

US07864581B2 Recovery method of NAND flash memory device 有权
标题翻译： NAND闪存器件的恢复方法
公开(公告)号：US07864581B2
公开(公告)日：2011-01-04
申请号：US11297610
申请日：2005-12-07
申请人： Ju Yeab Lee
发明人： Ju Yeab Lee
IPC分类号： G11C16/04
CPC分类号： G11C16/344 , G11C16/0483 , G11C16/3404
摘要： A NAND flash memory device is recovered by applying a predetermined bias to a drain or a source. A negative bias is applied to a cell gate so that electrons are injected into a floating gate of a cell. This narrows the distribution of an erase threshold voltage and minimizes interference from states of peripheral cells.
摘要翻译：通过对漏极或源施加预定的偏压来恢复NAND闪速存储器件。将负偏压施加到单元栅极，使得电子注入到单元的浮置栅极中。这会使擦除阈值电压的分布变窄，并使外围电池状态的干扰最小化。

9. 发明授权

US07796438B2 Flash memory device and method of programming the same 失效
标题翻译：闪存设备及其编程方法相同
公开(公告)号：US07796438B2
公开(公告)日：2010-09-14
申请号：US11951315
申请日：2007-12-05
申请人： Ju In Kim , Ju Yeab Lee
发明人： Ju In Kim , Ju Yeab Lee
IPC分类号： G11C16/06
CPC分类号： G11C16/3468 , G11C16/0483 , G11C16/10 , G11C16/3481
摘要： A flash memory device may include a memory cell array, a page buffer unit, and a switching element. The page buffer unit may include first and second latches and is configured to program data into the memory cell array and read data from the memory cell array. The switching element enables the first latch during a verify operation of a first program based on a first verify voltage, and enables or disables the first latch in order to execute a verify operation of a second program based on a second verify voltage lower than the first verify voltage depending on whether data to be programmed has been stored in the second latch.
摘要翻译：闪存器件可以包括存储单元阵列，页缓冲器单元和开关元件。页面缓冲单元可以包括第一和第二锁存器，并且被配置为将数据编程到存储单元阵列中并从存储单元阵列读取数据。基于第一验证电压，开关元件在第一程序的验证操作期间使第一锁存器能够启用或禁用第一锁存器，以便基于低于第一锁存器的第二验证电压执行第二程序的验证操作根据要编程的数据是否存储在第二个锁存器中来验证电压。

10. 发明申请

US20080298127A1 Method of Reading Flash Memory Device for Depressing Read Disturb 有权
标题翻译：阅读闪存设备的方法，用于抑制读取干扰
公开(公告)号：US20080298127A1
公开(公告)日：2008-12-04
申请号：US11965191
申请日：2007-12-27
申请人： Nam Kyeong Kim , Ju Yeab Lee , Keum Hwan Noh
发明人： Nam Kyeong Kim , Ju Yeab Lee , Keum Hwan Noh
IPC分类号： G11C16/26
CPC分类号： G11C16/3418 , G11C16/0483 , G11C16/3427
摘要： Provided is a method of reading a flash memory device for depressing read disturb. According to the method, a first voltage is applied to a gate of the drain select transistor to turn on the drain select transistor, and a read voltage is applied to a gate of a selected transistor among the plurality of memory cells. Then, a pass voltage is applied to gates of unselected transistors among the plurality of memory cells. Furthermore, when the pass voltage is applied, a first pass voltage is applied and then a second pass voltage is applied after an elapse of a predetermined time following the applying of the first pass voltage. The second pass voltage has a level different from that of the first pass voltage.
摘要翻译：提供了一种读取用于按下读取干扰的闪速存储器件的方法。根据该方法，将第一电压施加到漏极选择晶体管的栅极以使漏极选择晶体管导通，并且将读取电压施加到多个存储单元中的选定晶体管的栅极。然后，对多个存储单元中的未选择晶体管的栅极施加通过电压。此外，当施加通过电压时，施加第一通过电压，然后在施加第一通过电压之后经过预定时间之后施加第二通过电压。第二通过电压具有与第一通过电压不同的电平。

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