专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09287499B2 Integrated circuit device 有权
标题翻译：集成电路器件
公开(公告)号：US09287499B2
公开(公告)日：2016-03-15
申请号：US14464084
申请日：2014-08-20
申请人： Kabushiki Kaisha Toshiba
发明人： Hikari Tajima , Masaki Kondo , Tsukasa Nakai , Takashi Izumida , Nobuaki Yasutake
IPC分类号： H01L23/62 , H01L45/00
CPC分类号： H01L27/2454 , H01L27/249 , H01L45/04 , H01L45/1683
摘要： An integrated circuit device according to an embodiment includes an electrode extending in a first direction, two semiconductor members spaced from each other in the first direction and extending in a second direction crossing the first direction, an insulating film placed between each of the two semiconductor members and the electrode and made of a first insulating material, and a first dielectric member placed between the two semiconductor members and made of a second insulating material having a higher permittivity than the first insulating material.
摘要翻译：根据实施例的集成电路器件包括沿第一方向延伸的电极，在第一方向上彼此间隔开并沿与第一方向交叉的第二方向延伸的两个半导体部件，设置在两个半导体部件中的每一个之间的绝缘膜以及由第一绝缘材料制成的电极，以及放置在两个半导体部件之间并由具有比第一绝缘材料更高的介电常数的第二绝缘材料制成的第一电介质部件。

2. 发明授权

US09142288B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US09142288B2
公开(公告)日：2015-09-22
申请号：US14563605
申请日：2014-12-08
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kei Sakamoto , Masaki Kondo , Nobuaki Yasutake , Takayuki Okamura
IPC分类号： G11C11/00 , G11C13/00
CPC分类号： G11C13/0002 , G11C13/004 , G11C13/0069 , G11C2213/72
摘要： A semiconductor memory device according to an embodiment includes: a memory cell array including a plurality of first lines, a plurality of second lines, and memory cells disposed at each of intersections of the first lines and the second lines; and a control circuit configured to apply a first voltage to a selected first line, apply a second voltage having a voltage value which is smaller than that of the first voltage to a selected second line, and apply a third voltage and a fourth voltage to a non-selected first line and a non-selected second line, respectively. The control circuit is configured to apply a fifth voltage to one of the non-selected first lines that is adjacent to the selected first line, and apply a sixth voltage to one of the non-selected second lines that is adjacent to the selected second line.
摘要翻译：根据实施例的半导体存储器件包括：存储单元阵列，包括多个第一线，多条第二线和设置在第一线和第二线的每个交点处的存储单元; 以及控制电路，被配置为向所选择的第一线施加第一电压，将具有小于第一电压的电压值的第二电压施加到所选择的第二线，并将第三电压和第四电压施加到未选择的第一行和未选择的第二行。控制电路被配置为向与所选择的第一行相邻的未选择的第一行之一施加第五电压，并且将第六电压施加到与所选择的第二行相邻的未选择的第二行之一。

3. 发明申请

US20130163323A1 SEMICONDUCTOR MEMORY DEVICE USING VARIABLE RESISTANCE ELEMENT OR PHASE-CHANGE ELEMENT AS MEMORY DEVICE 失效
标题翻译：使用可变电阻元件或相变元件作为存储器件的半导体存储器件
公开(公告)号：US20130163323A1
公开(公告)日：2013-06-27
申请号：US13772699
申请日：2013-02-21
申请人： Kabushiki Kaisha Toshiba
发明人： Nobuaki Yasutake
IPC分类号： H01L45/00 , G11C13/00
CPC分类号： H01L27/2409 , G11C13/0004 , G11C2213/71 , G11C2213/72 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/145 , H01L45/149 , H01L45/1675
摘要： A semiconductor memory device includes a first conductive line, a second conductive line, a cell unit, a silicon nitride film and a double-sidewall film. The first conductive line extends in a first direction. The second conductive line extends in a second direction crossing the first direction. The cell unit includes a phase-change film and a rectifier element connected in series with each other between the first conductive line and the second conductive line. The silicon nitride film is formed on a side surface of the phase-change film. The double-sidewall film includes a silicon oxide film and the silicon nitride film formed on a side surface of the rectifier element.
摘要翻译：半导体存储器件包括第一导电线，第二导电线，电池单元，氮化硅膜和双侧壁膜。第一导线沿第一方向延伸。第二导线沿与第一方向交叉的第二方向延伸。电池单元包括在第一导线和第二导线之间彼此串联连接的相变膜和整流元件。氮化硅膜形成在相变膜的侧面上。双侧壁膜包括氧化硅膜和形成在整流元件的侧表面上的氮化硅膜。

4. 发明申请

US20140347911A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20140347911A1
公开(公告)日：2014-11-27
申请号：US14023844
申请日：2013-09-11
申请人： Kabushiki Kaisha Toshiba
发明人： Yoichi Minemura , Takayuki Tsukamoto , Takamasa Okawa , Hiroshi Kanno , Atsushi Yoshida , Satoshi Konagai , Nobuaki Yasutake
IPC分类号： G11C13/00
CPC分类号： G11C13/0002 , G11C13/0007 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2418 , H01L27/2463 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/147 , H01L45/1675
摘要： A nonvolatile semiconductor memory device according to an embodiment comprises a memory cell block that includes a memory cell array, the memory cell array including: a plurality of first lines; a plurality of second lines intersecting the plurality of first lines; and a memory cell that is provided at each of intersections of the plurality of first lines and the plurality of second lines and includes a variable resistance element, the memory cell array further including a protective resistance film that is provided respectively at each of the intersections of the plurality of first lines and the plurality of second lines and that is connected in series with the memory cell and ohmically contacts the memory cell, and the protective resistance film being configured from a material having a resistivity of 1˜100 Ω·cm.
摘要翻译：根据实施例的非易失性半导体存储器件包括存储单元块，其包括存储单元阵列，所述存储单元阵列包括：多个第一线; 与所述多个第一线相交的多个第二线; 以及存储单元，其设置在所述多个第一线和所述多条第二线的交点处，并且包括可变电阻元件，所述存储单元阵列还包括保护电阻膜，所述保护电阻膜分别设置在所述保护电阻膜的每个交点处多个第一线和多条第二线，并且与存储单元串联连接并与存储单元相接触，并且保护电阻膜由电阻率为1〜100Ω·cm的材料构成。

5. 发明申请

US20150357379A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150357379A1
公开(公告)日：2015-12-10
申请号：US14483632
申请日：2014-09-11
申请人： Kabushiki Kaisha Toshiba
发明人： Hikari TAJIMA , Masaki Kondo , Tsukasa Nakai , Takashi Izumida , Nobuaki Yasutake
IPC分类号： H01L27/24 , H01L29/78
CPC分类号： H01L27/2454 , H01L27/228 , H01L27/249 , H01L29/7827 , H01L45/04 , H01L45/1226 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/149
摘要： According to an embodiment, a semiconductor device includes two electrodes extending in a first direction, a semiconductor layer provided between the two electrodes, an insulating film disposed between the two electrodes. The two electrodes are arranged in a second direction intersecting the first direction. The semiconductor layer extends in a third direction orthogonal to the first direction and the second direction. The insulating film covers a side surface of the semiconductor layer opposite to one of the two electrodes. The semiconductor layer has a shape in a cross section perpendicular to the third direction such that a width in the first direction at a center of the cross section is narrower than a width, in the first direction, of the side surface.
摘要翻译：根据实施例，半导体器件包括沿第一方向延伸的两个电极，设置在两个电极之间的半导体层，设置在两个电极之间的绝缘膜。两个电极沿与第一方向交叉的第二方向布置。半导体层在与第一方向和第二方向正交的第三方向上延伸。绝缘膜覆盖与两个电极之一相对的半导体层的侧表面。半导体层具有与第三方向垂直的截面形状，使得在横截面的中心处的第一方向上的宽度比侧表面的第一方向上的宽度窄。

6. 发明授权

US09111858B2 Non-volatile semiconductor memory device and method for manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US09111858B2
公开(公告)日：2015-08-18
申请号：US13838722
申请日：2013-03-15
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Jun Nishimura , Nobuaki Yasutake , Kei Sakamoto , Takayuki Okamura
IPC分类号： H01L21/336 , H01L27/24 , H01L45/00
CPC分类号： H01L27/2481 , H01L27/2409 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1641 , H01L45/1675
摘要： A non-volatile semiconductor memory device includes a cell array layer including a first wire, one or more memory cells stacked on the first wire, and a second wire formed on the memory cell so as to cross the first wire, wherein the memory cell includes a current rectifying element and a variable resistance element, and an atomic composition ratio of nitrogen is higher than that of oxygen in a part of a sidewall of the current rectifying element.
摘要翻译：一种非易失性半导体存储器件包括：单元阵列层，包括第一布线，堆叠在第一布线上的一个或多个存储单元，以及形成在存储单元上以跨越第一布线的第二布线，其中存储单元包括电流整流元件和可变电阻元件，并且氮的原子组成比高于当前整流元件的侧壁的一部分中的氧的原子组成比。

7. 发明授权

US09042158B2 Nonvolatile semiconductor memory device with protective resistance film 有权
标题翻译：具有保护电阻膜的非易失性半导体存储器件
公开(公告)号：US09042158B2
公开(公告)日：2015-05-26
申请号：US14023844
申请日：2013-09-11
申请人： Kabushiki Kaisha Toshiba
发明人： Yoichi Minemura , Takayuki Tsukamoto , Takamasa Okawa , Hiroshi Kanno , Atsushi Yoshida , Satoshi Konagai , Nobuaki Yasutake
IPC分类号： G11C11/00 , G11C13/00
CPC分类号： G11C13/0002 , G11C13/0007 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2418 , H01L27/2463 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/147 , H01L45/1675
摘要： A nonvolatile semiconductor memory device according to an embodiment includes a memory cell block that includes a memory cell array, the memory cell array including: a plurality of first lines; a plurality of second lines intersecting the plurality of first lines; and a memory cell that is provided at each of intersections of the plurality of first lines and the plurality of second lines and includes a variable resistance element, the memory cell array further including a protective resistance film that is provided respectively at each of the intersections of the plurality of first lines and the plurality of second lines and that is connected in series with the memory cell and ohmically contacts the memory cell, and the protective resistance film being configured from a material having a resistivity of 1˜100 Ω·cm.
摘要翻译：根据实施例的非易失性半导体存储器件包括存储单元块，其包括存储单元阵列，所述存储单元阵列包括：多个第一线; 与所述多个第一线相交的多个第二线; 以及存储单元，其设置在所述多个第一线和所述多条第二线的交点处，并且包括可变电阻元件，所述存储单元阵列还包括保护电阻膜，所述保护电阻膜分别设置在所述保护电阻膜的每个交点处多个第一线和多条第二线，并且与存储单元串联连接并与存储单元相接触，并且保护电阻膜由电阻率为1〜100Ω·cm的材料构成。

8. 发明申请

US20140021436A1 SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器件
公开(公告)号：US20140021436A1
公开(公告)日：2014-01-23
申请号：US14033918
申请日：2013-09-23
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Nobuaki Yasutake
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L27/2409 , H01L27/2481
摘要： A memory cell comprises a diode layer, a variable resistance layer, a first electrode layer. The diode layer functions as a rectifier element. The variable resistance layer functions as a variable resistance element. The first electrode layer is provided between the variable resistance layer and the diode layer. The first electrode layer comprises a titanium nitride layer configured by titanium nitride. Where a first ratio is defined as a ratio of titanium atoms to nitrogen atoms in a first region in the titanium nitride layer and a second ratio is defined as a ratio of titanium atoms to nitrogen atoms in a second region which is in the titanium nitride layer and is nearer to the variable resistance layer than is the first region, the second ratio is larger than the first ratio.
摘要翻译：存储单元包括二极管层，可变电阻层，第一电极层。二极管层用作整流元件。可变电阻层用作可变电阻元件。第一电极层设置在可变电阻层和二极管层之间。第一电极层包括由氮化钛构成的氮化钛层。其中第一比率被定义为氮化钛层中的第一区域中的钛原子与氮原子的比率，第二比例定义为在氮化钛层中的第二区域中的钛原子与氮原子的比例并且比第一区域更靠近可变电阻层，第二比例大于第一区域。

9. 发明申请

US20140003127A1 SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器件
公开(公告)号：US20140003127A1
公开(公告)日：2014-01-02
申请号：US13778371
申请日：2013-02-27
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kei Sakamoto , Takayuki Okamura , Nobuaki Yasutake , Jun Nishimura
IPC分类号： G11C13/00
CPC分类号： G11C13/0002 , G11C13/0023 , G11C2213/72 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/06 , H01L45/08 , H01L45/085 , H01L45/10 , H01L45/12 , H01L45/1233
摘要： A semiconductor memory device according to an embodiment includes a memory cell array including memory cells, the memory cells each configured having a current rectifier element and a variable resistance element connected in series therein. Each of the memory cells has formed on aside surface thereof: a first insulating film provided on aside surface of the current rectifier element and the variable resistance element and having a composition ratio of anon-silicon element to silicon which is a first value; a silicon oxide film provided on a side surface of the first insulating film; and a second insulating film provided on aside surface of the silicon oxide film and having a composition ratio of a non-silicon element to silicon which is a second value. The first value is smaller than the second value.
摘要翻译：根据实施例的半导体存储器件包括存储单元阵列，该存储单元阵列包括存储单元，每个存储单元均配置有电流整流元件和串联连接的可变电阻元件。每个存储单元形成在其旁边表面上：设置在电流整流元件和可变电阻元件的另一表面上的第一绝缘膜，并且具有作为第一值的硅 - 硅元件与硅的组成比; 设置在所述第一绝缘膜的侧面上的氧化硅膜; 以及设置在氧化硅膜的表面上并具有作为第二值的非硅元素与硅的组成比的第二绝缘膜。第一个值小于第二个值。

10. 发明申请

US20130277640A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：非挥发性半导体存储器件及其制造方法
公开(公告)号：US20130277640A1
公开(公告)日：2013-10-24
申请号：US13838722
申请日：2013-03-15
申请人： Kabushiki Kaisha Toshiba
发明人： Jun NISHIMURA , Nobuaki Yasutake , Kei Sakamoto , Takayuki Okamura
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L27/2481 , H01L27/2409 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1641 , H01L45/1675
摘要： A non-volatile semiconductor memory device includes a cell array layer including a first wire, one or more memory cells stacked on the first wire, and a second wire formed on the memory cell so as to cross the first wire, wherein the memory cell includes a current rectifying element and a variable resistance element, and an atomic composition ratio of nitrogen is higher than that of oxygen in a part of a sidewall of the current rectifying element.
摘要翻译：一种非易失性半导体存储器件包括：单元阵列层，包括第一布线，堆叠在第一布线上的一个或多个存储单元，以及形成在存储单元上的第二布线，以便跨越第一布线，其中存储单元包括电流整流元件和可变电阻元件，并且氮的原子组成比高于当前整流元件的侧壁的一部分中的氧的原子组成比。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式