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1. 发明授权

US09263632B2 Semiconductor light emitting device 有权
公开(公告)号：US09263632B2
公开(公告)日：2016-02-16
申请号：US14695812
申请日：2015-04-24
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Shigeya Kimura , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/12 , H01L33/06 , H01L33/32 , B82Y20/00 , H01S5/343 , H01S5/34
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/12 , H01L33/32 , H01S5/3408 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.

2. 发明授权

US09035336B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09035336B2
公开(公告)日：2015-05-19
申请号：US14220584
申请日：2014-03-20
申请人： Kabushiki Kaisha Toshiba
发明人： Koichi Tachibana , Chie Hongo , Hajime Nago , Shinya Nunoue
IPC分类号： H01L29/22 , H01L33/02 , H01L33/00 , B82Y20/00 , H01S5/343 , H01L33/30 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/32
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/02 , H01L33/305 , H01S5/2009 , H01S5/22 , H01S5/2224 , H01S5/3063 , H01S5/3072 , H01S5/3216 , H01S5/34333 , H01S2304/04 , Y10S257/918
摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.
摘要翻译：半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出，第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

3. 发明授权

US08987026B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08987026B2
公开(公告)日：2015-03-24
申请号：US14496697
申请日：2014-09-25
申请人： Kabushiki Kaisha Toshiba
发明人： Naoharu Sugiyama , Tomonari Shioda , Shigeya Kimura , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/007 , H01L33/08 , H01L33/22 , H01L33/42 , H01L2933/0016 , H01L2933/0058
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括n型层，发光层，p型层和透明电极。 n型层包括氮化物半导体，其厚度不大于500nm。发光层设置在n型层上。 p型层设置在发光层上，并且包括氮化物半导体。透明电极与n型层接触。 n型层设置在透明电极和发光层之间。

4. 发明授权

US08963176B2 Semiconductor light-emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08963176B2
公开(公告)日：2015-02-24
申请号：US13835371
申请日：2013-03-15
申请人： Kabushiki Kaisha Toshiba
发明人： Shigeya Kimura , Hajime Nago , Toshiyuki Oka , Koichi Tachibana , Toshiki Hikosaka , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01S5/32 , H01S5/343
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01S5/3216 , H01S5/34333
摘要： According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well layer is stacked with the barrier layer. The stacked body is provided between the light-emitting portion and the n-type semiconductor layer and includes a first layer and a second layer. The second layer is stacked with the first layer. Average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion. The layer thickness tb of the barrier layer is 10 nanometers or less.
摘要翻译：根据一个实施例，半导体发光器件包括包括氮化物半导体的n型半导体层，包括氮化物半导体的p型半导体层，发光部分和层叠体。发光部分设置在n型和p型半导体层之间，并且包括阻挡层和阱层。阱层与阻挡层堆叠。所述层叠体设置在所述发光部和所述n型半导体层之间，并且包括第一层和第二层。第二层与第一层堆叠。平均层叠体的组成比高于发光部的平均In组成比的0.4倍。阻挡层的层厚度tb为10纳米以下。

5. 发明申请

US20140346439A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20140346439A1
公开(公告)日：2014-11-27
申请号：US14455451
申请日：2014-08-08
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Koichi Tachibana , Hajime Nago , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
IPC分类号： H01L33/32 , H01L33/06
CPC分类号： H01L33/32 , H01L33/04 , H01L33/06 , H01L33/12
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting part, and a multilayered structural body. The light emitting part is provided between the first and second semiconductor layers and includes barrier layers and well layers alternately stacked. The multilayered structural body is provided between the first semiconductor layer and the light emitting part and includes high energy layers and low energy layers alternately stacked. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the multilayered structural body. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the light emitting part.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光部分和多层结构体。发光部分设置在第一和第二半导体层之间，并且包括交替层叠的势垒层和阱层。多层结构体设置在第一半导体层和发光部之间，并且包含交替堆叠的高能层和低能层。第二半导体侧的平均In组成比高于多层结构体中的第一半导体侧的平均In组成比。第二半导体侧的平均In组成比高于发光部中的第一半导体侧的平均In组成比。

6. 发明申请

US20140109831A1 VAPOR DEPOSITION METHOD AND VAPOR DEPOSITION APPARATUS 审中-公开
标题翻译：蒸气沉积法和蒸气沉积装置
公开(公告)号：US20140109831A1
公开(公告)日：2014-04-24
申请号：US14143418
申请日：2013-12-30
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yoshiyuki HARADA , Koichi Tachibana , Toshiki Hikosaka , Hajime Nago , Shinya Nunoue
IPC分类号： C23C16/455
CPC分类号： C23C16/45504 , C23C16/303 , C23C16/45574 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V source-material gas. The method can deposit a first semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of not less than 10 atomic percent by supplying the group III source-material gas from a first outlet and by supplying the group V source-material gas from a second outlet. The method can deposit a second semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of less than 10 atomic percent by mixing the group III and group V source-material gases and supplying the mixed group III and group V source-material gases from at least one of the first outlet and the second outlet.
摘要翻译：根据一个实施例，公开了一种通过提供III族源材料气体和V族原料气体在衬底上形成氮化物半导体层的气相沉积方法。该方法可以通过从第一出口提供III族源材料气体并且通过提供第V族源极材料来沉积包括具有不小于10原子％的III族元素中Al的组分比例的氮化物半导体的第一半导体层，来自第二出口的原料气体。该方法可以通过混合第III族和第V族源材料气体并将第III族和V族源混合，从而沉积包含具有小于10原子％的III族元素中的Al的组分比例的氮化物半导体的第二半导体层 - 来自第一出口和第二出口中的至少一个的材料气体。

7. 发明申请

US20130309796A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20130309796A1
公开(公告)日：2013-11-21
申请号：US13950444
申请日：2013-07-25
申请人： Kabushiki Kaisha Toshiba
发明人： Yoshiyuki Harada , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/08
CPC分类号： H01L33/08 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/06
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和设置在其间的发光部分。发光部分包括多个发光层。每个发光层包括在垂直于从n型半导体层朝向p型半导体层的第一方向的平面中与阱层区域并置的阱层区域和非阱层区域。每个阱层区域具有常见的An In组成比。每个阱层区域包括在垂直于第一方向的方向上具有50纳米或更大的宽度的部分。

8. 发明授权

US08890195B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08890195B2
公开(公告)日：2014-11-18
申请号：US13747638
申请日：2013-01-23
申请人： Kabushiki Kaisha Toshiba
发明人： Taisuke Sato , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/36 , H01L33/60 , H01L33/30 , H01L33/40 , H01L33/38 , H01L33/32 , H01L33/42 , H01L33/44
CPC分类号： H01L33/60 , H01L33/30 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/44 , H01L2224/29083 , H01L2224/29099 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first, a second and a third conductive layer. The stacked structural body includes first and second semiconductors and a light emitting layer provided therebetween. The second semiconductor layer is disposed between the first conductive layer and the light emitting layer. The first conductive layer is transparent. The first conductive layer has a first major surface on a side opposite to the second semiconductor layer. The second conductive layer is in contact with the first major surface. The third conductive layer is in contact with the first major surface and has a reflectance higher than a reflectance of the second conductive layer. The third conductive layer includes an extending part extending in parallel to the first major surface. At least a portion of the extending part is not covered by the second conductive layer.
摘要翻译：根据一个实施例，半导体发光器件包括层叠结构体，第一，第二和第三导电层。堆叠结构体包括第一和第二半导体以及设置在它们之间的发光层。第二半导体层设置在第一导电层和发光层之间。第一导电层是透明的。第一导电层在与第二半导体层相对的一侧具有第一主表面。第二导电层与第一主表面接触。第三导电层与第一主表面接触并且具有高于第二导电层的反射率的反射率。第三导电层包括平行于第一主表面延伸的延伸部分。延伸部分的至少一部分不被第二导电层覆盖。

9. 发明授权

US08741686B2 Semiconductor device 失效
公开(公告)号：US08741686B2
公开(公告)日：2014-06-03
申请号：US13837834
申请日：2013-03-15
申请人： Kabushiki Kaisha Toshiba
发明人： Koichi Tachibana , Chie Hongo , Hajime Nago , Shinya Nunoue
IPC分类号： H01L21/00 , H01L21/31
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/02 , H01L33/305 , H01S5/2009 , H01S5/22 , H01S5/2224 , H01S5/3063 , H01S5/3072 , H01S5/3216 , H01S5/34333 , H01S2304/04 , Y10S257/918
摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

10. 发明授权

US09263631B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09263631B2
公开(公告)日：2016-02-16
申请号：US14446929
申请日：2014-07-30
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Toshiki Hikosaka , Koichi Tachibana , Hajime Nago , Shinya Nunoue
IPC分类号： H01L21/00 , H01L33/06 , B82Y20/00 , H01S5/30 , H01S5/34 , H01S5/343 , H01L33/00 , H01L33/32
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0075 , H01L33/32 , H01S5/305 , H01S5/3407 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer.
摘要翻译：根据一个实施例，半导体发光器件包括n型层，p型层和设置在n型层和p型层之间并包括势垒层和阱层的发光单元。阻挡层中的至少一个包括第一和第二部分层。第一部分层设置在n型层的一侧。第二部分层设置在p型层的一侧，并且包含浓度高于第一部分层中的n型杂质。阱层中的至少一个包括第三和第四部分层。第三部分层设置在n型层的一侧。第四部分层设置在p型层的一侧，并且包含浓度高于第三部分层的n型杂质。

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