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1. 发明授权

US09508804B2 Nitride semiconductor element and nitride semiconductor wafer 有权
标题翻译：氮化物半导体元件和氮化物半导体晶片
公开(公告)号：US09508804B2
公开(公告)日：2016-11-29
申请号：US15044812
申请日：2016-02-16
申请人： Kabushiki Kaisha Toshiba
发明人： Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L21/00 , H01L29/00 , H01L33/00 , H01L29/205 , H01L29/20 , H01L33/06 , H01L21/02 , H01L29/778 , H01L33/12 , H01L33/32 , H01L29/36 , B82Y20/00
CPC分类号： H01L29/205 , B82Y20/00 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L29/2003 , H01L29/365 , H01L29/7783 , H01L33/06 , H01L33/12 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of Alx1Ga1-x1N (0
摘要翻译：根据一个实施例，氮化物半导体元件包括基底层，功能层和层叠体。层叠体设置在基础层和功能层之间。层叠体包括第一层叠中间层，其包括第一GaN中间层，Al x Ga 1-x N 1的第一高Al组成层（0

2. 发明申请

US20160273109A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体制造装置及制造半导体器件的方法
公开(公告)号：US20160273109A1
公开(公告)日：2016-09-22
申请号：US14840734
申请日：2015-08-31
申请人： Kabushiki Kaisha Toshiba
发明人： Yoshiyuki Harada , Kotaro Zaima , Hidenori Hanyu , Takashi Kataoka
IPC分类号： C23C16/455 , H01L21/02
CPC分类号： C23C16/45572 , C23C16/303 , C23C16/45565 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： According to one embodiment, a semiconductor manufacturing apparatus includes a cover part, a gas introduction part provided in the cover part, and a shower plate. The shower plate includes a space, a bottom part, and an outer frame part, the space being provided by jointing the shower plate with the cover part, the space being capable of containing a gas introduced from the gas introduction part, the outer frame part surrounding the bottom part, the bottom part including a plurality of ejection ports to eject the gas, a first cooling path being disposed between the ejection ports and the cover part in a center part of the bottom part, and a second cooling path disposed between the ejection ports and the cover part in an outer peripheral part of the bottom part surrounding the center part, the second cooling path being not connected with the first cooling path
摘要翻译：根据一个实施例，半导体制造装置包括盖部，设置在盖部中的气体导入部和喷淋板。淋浴板包括空间，底部和外框架部分，该空间通过将喷淋板与盖部接合而设置，该空间能够容纳从气体导入部引入的气体，外框部围绕底部，底部包括多个喷射口以排出气体，第一冷却通道设置在喷射口和位于底部的中心部分的盖部之间，第二冷却通道设置在第二冷却通道所述第一冷却路径与所述第一冷却路径连接，所述第二冷却路径与所述第一冷却路径

3. 发明授权

US09263632B2 Semiconductor light emitting device 有权
公开(公告)号：US09263632B2
公开(公告)日：2016-02-16
申请号：US14695812
申请日：2015-04-24
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Shigeya Kimura , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/12 , H01L33/06 , H01L33/32 , B82Y20/00 , H01S5/343 , H01S5/34
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/12 , H01L33/32 , H01S5/3408 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.

4. 发明授权

US09130069B2 Method for manufacturing nitride semiconductor layer and method for manufacturing semiconductor light emitting device 有权
标题翻译：制造氮化物半导体层的方法和半导体发光器件的制造方法
公开(公告)号：US09130069B2
公开(公告)日：2015-09-08
申请号：US13798436
申请日：2013-03-13
申请人： Kabushiki Kaisha Toshiba
发明人： Hajime Nago , Yoshiyuki Harada , Hisashi Yoshida , Shigeya Kimura , Shinya Nunoue
IPC分类号： H01L21/04 , H01L33/00 , H01L21/02 , H01L33/06 , C23C16/30 , C23C16/455
CPC分类号： H01L33/0075 , C23C16/301 , C23C16/45523 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01L33/06
摘要： According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor layer. The method can include forming a first nitride semiconductor layer on a substrate in a reactor supplied with a first carrier gas and a first source gas. The first nitride semiconductor layer includes indium. The first carrier gas includes hydrogen supplied into the reactor at a first flow rate and includes nitrogen supplied into the reactor at a second flow rate. The first source gas includes indium and nitrogen and supplied into the reactor at a third flow rate. The first flow rate is not less than 0.07% and not more than 0.15% of a sum of the first flow rate, the second flow rate, and the third flow rate.
摘要翻译：根据一个实施例，公开了一种用于制造氮化物半导体层的方法。该方法可以包括在提供有第一载气和第一源气体的反应器中的基板上形成第一氮化物半导体层。第一氮化物半导体层包括铟。第一载气包括以第一流量供应到反应器中的氢气，并且包括以第二流量供应到反应器中的氮气。第一源气体包括铟和氮并以第三流量供应到反应器中。第一流量不小于第一流量，第二流量和第三流量之和的0.07％且不大于0.15％。

5. 发明申请

US20130309796A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20130309796A1
公开(公告)日：2013-11-21
申请号：US13950444
申请日：2013-07-25
申请人： Kabushiki Kaisha Toshiba
发明人： Yoshiyuki Harada , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/08
CPC分类号： H01L33/08 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/06
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和设置在其间的发光部分。发光部分包括多个发光层。每个发光层包括在垂直于从n型半导体层朝向p型半导体层的第一方向的平面中与阱层区域并置的阱层区域和非阱层区域。每个阱层区域具有常见的An In组成比。每个阱层区域包括在垂直于第一方向的方向上具有50纳米或更大的宽度的部分。

6. 发明授权

US09331234B2 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device 有权
公开(公告)号：US09331234B2
公开(公告)日：2016-05-03
申请号：US14798044
申请日：2015-07-13
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hajime Nago , Yoshiyuki Harada , Shigeya Kimura , Hisashi Yoshida , Shinya Nunoue
IPC分类号： H01S5/00 , H01L33/00 , H01L33/32 , H01S5/32 , H01S5/30 , H01S5/343 , H01L33/06 , H01L33/02
CPC分类号： H01L33/0075 , H01L33/0025 , H01L33/007 , H01L33/02 , H01L33/06 , H01L33/325 , H01S5/3013 , H01S5/305 , H01S5/3063 , H01S5/3206 , H01S5/3216 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer. The p-type semiconductor layer includes a first p-side layer, a second p-side layer, and a third p-side layer. A concentration profile of Mg of a p-side region includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, a sixth portion and a seventh portion. The p-side region includes the light emitting layer, the second p-side layer, and the third p-side layer. A Mg concentration of the sixth portion is not less than 1×1020 cm−3 and not more than 3×1020 cm−3. The Al concentration is 1/100 of the maximum value at a second position. A Mg concentration at the second position is not less than 2×1018 cm−3.

7. 发明授权

US09305773B2 Semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer 有权
公开(公告)号：US09305773B2
公开(公告)日：2016-04-05
申请号：US14744153
申请日：2015-06-19
申请人： Kabushiki Kaisha Toshiba
发明人： Hung Hung , Naoharu Sugiyama , Hisashi Yoshida , Toshiki Hikosaka , Yoshiyuki Harada , Shinya Nunoue
IPC分类号： H01L21/00 , H01L21/02 , H01L33/00 , H01L33/12 , H01L33/32 , H01L29/20 , H01L29/207 , H01L29/06 , H01L29/201 , H01L29/36 , H01L31/18
CPC分类号： H01L21/0254 , H01L21/02458 , H01L21/02505 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/0684 , H01L29/2003 , H01L29/201 , H01L29/207 , H01L29/36 , H01L31/1848 , H01L31/1856 , H01L33/002 , H01L33/0075 , H01L33/12 , H01L33/32 , H01L33/325
摘要： According to one embodiment, a semiconductor device includes a functional layer of a nitride semiconductor. The functional layer is provided on a nitride semiconductor layer including a first stacked multilayer structure provided on a substrate. The first stacked multilayer structure includes a first lower layer, a first intermediate layer, and a first upper layer. The first lower layer contains Si with a first concentration and has a first thickness. The first intermediate layer is provided on the first lower layer to be in contact with the first lower layer, contains Si with a second concentration lower than the first concentration, and has a second thickness thicker than the first thickness. The first upper layer is provided on the first intermediate layer to be in contact with the first intermediate layer, contains Si with a third concentration lower than the second concentration, and has a third thickness.

8. 发明申请

US20140295602A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER 有权
标题翻译：半导体发光器件，氮化物半导体层和形成氮化物半导体层的方法
公开(公告)号：US20140295602A1
公开(公告)日：2014-10-02
申请号：US14301022
申请日：2014-06-10
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Toshiki Hikosawa , Yoshiyuki Harada , Maki Sugai , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/48 , H01L33/32
CPC分类号： H01L33/20 , H01L33/0075 , H01L33/12 , H01L33/32 , H01L33/48
摘要： According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations.
摘要翻译：根据实施例，半导体发光器件包括基底层，第一半导体层，发光层和第二半导体层。基底层具有凹部，侧部和突起部的凹凸。基础层的第一主表面具有覆盖区域。基底层具有多个位错，其包括一端到达凹部的第一位错和一端到达突起的第二位错。到达第一主表面的第二位错的数量与所有第二位错的数量的比例小于到达第一主表面的第一位错的数量与所有第一位错的数量的比例。到达第一主表面的覆盖区域的多个位错小于所有第一位错的数量。

9. 发明申请

US20140048819A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20140048819A1
公开(公告)日：2014-02-20
申请号：US14059038
申请日：2013-10-21
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Naoharu Sugiyama , Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L33/06 , H01L33/12
摘要： According to one embodiment, a semiconductor light-emitting device includes: a first conductivity type first semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in a (0001) surface; a second conductivity type second semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in the (0001) surface; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than the lattice constant of the first semiconductor layer; and a first stress application layer provided on a side opposite to the light emitting layer of the first semiconductor layer and applying a compressive stress to the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括：包含氮化物半导体晶体并且在（0001）表面中具有拉伸应力的第一导电类型的第一半导体层; 含有氮化物半导体晶体并在（0001）表面具有拉伸应力的第二导电类型的第二半导体层; 设置在所述第一半导体层和所述第二半导体层之间的包含氮化物半导体晶体并且具有大于所述第一半导体层的晶格常数的平均晶格常数的发光层; 以及第一应力施加层，其设置在与所述第一半导体层的所述发光层相对的一侧上，并向所述第一半导体层施加压缩应力。

10. 发明授权

US11158514B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US11158514B2
公开(公告)日：2021-10-26
申请号：US16562555
申请日：2019-09-06
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Toshiyuki Nishikawa , Kazuhiko Komatsu , Shinji Nunotani , Yoshiyuki Harada , Hideto Sugawara
IPC分类号： H01L21/285 , H01L33/40 , H01L29/47
摘要： A semiconductor device includes an n-type semiconductor layer; a first metal layer provided on the n-type semiconductor layer, the first metal layer including first atoms capable of being n-type impurities in the n-type semiconductor layer; a second metal layer provided on the first metal layer, the second metal layer including titanium atoms; a third metal layer provided on the second metal layer; and a second atom capable of being a p-type impurity in the n-type semiconductor layer. The second atom and a part of the titanium atoms are included in a vicinity of an interface between the first metal layer and the second metal layer.

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