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1. 发明授权

US09991421B2 Method for manufacturing light emitting diode device 有权
公开(公告)号：US09991421B2
公开(公告)日：2018-06-05
申请号：US15650276
申请日：2017-07-14
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Ikuo Uematsu , Makoto Saito , Shinya Ito , Kengo Furutani , Shinichi Sasaki
IPC分类号： H01L33/00 , H01L33/32 , C01G15/00 , H01L21/02
CPC分类号： H01L33/32 , C01G15/00 , H01L21/02019
摘要： According to one embodiment, a method for manufacturing an LED device includes forming a laminated semiconductor layer including a GaN layer of a first conductivity type, a GaN-based luminous layer, and a GaN layer of a second conductivity type stacked in this order on a surface of a substrate, forming a resist pattern on the laminated semiconductor layer, subjecting the laminated semiconductor layer to reactive ion etching using the resist pattern as a mask to selectively remove the laminated semiconductor layer to form an LED element structure part and an electrode connection region, removing the resist pattern, and treating the substrate including the LED element structure part and the electrode connection region with a first etching residue removing aqueous solution.

2. 发明申请

US20160284522A1 UPPER ELECTRODE, EDGE RING, AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：上电极，边缘环和等离子体加工设备
公开(公告)号：US20160284522A1
公开(公告)日：2016-09-29
申请号：US14800938
申请日：2015-07-16
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hideo ETO , Masanori Abe , Makoto Saito
IPC分类号： H01J37/32 , C23C16/455 , C23C16/458 , C23C16/50
CPC分类号： C23C16/458 , C23C16/45565 , C23C16/5096 , H01J37/32091 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32623
摘要： According to one embodiment, an upper electrode to be arranged opposite to a lower electrode and serving as a shower head in a plasma processing apparatus of a parallel-plate type is provided. The upper electrode includes a concave portion provided on an outer peripheral side of a processing object opposing region configured to face a mounting region for a processing object to be placed on the lower electrode.
摘要翻译：根据一个实施例，提供了在平行板式等离子体处理装置中与下电极相对配置并用作喷头的上电极。上电极包括设置在处理对象区域的外周侧上的凹部，该凹部被构造为面对要放置在下电极上的处理对象的安装区域。

3. 发明申请

US20180026159A1 METHOD FOR MANUFACTURING LIGHT EMITTING DIODE DEVICE 有权
公开(公告)号：US20180026159A1
公开(公告)日：2018-01-25
申请号：US15650276
申请日：2017-07-14
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Ikuo UEMATSU , Makoto Saito , Shinya Ito , Kengo Furutani , Shinichi Sasaki
IPC分类号： H01L33/32 , H01L21/02 , C01G15/00
CPC分类号： H01L33/32 , C01G15/00 , H01L21/02019
摘要： According to one embodiment, a method for manufacturing an LED device includes forming a laminated semiconductor layer including a GaN layer of a first conductivity type, a GaN-based luminous layer, and a GaN layer of a second conductivity type stacked in this order on a surface of a substrate, forming a resist pattern on the laminated semiconductor layer, subjecting the laminated semiconductor layer to reactive ion etching using the resist pattern as a mask to selectively remove the laminated semiconductor layer to form an LED element structure part and an electrode connection region, removing the resist pattern, and treating the substrate including the LED element structure part and the electrode connection region with a first etching residue removing aqueous solution.

4. 发明授权

US09111969B2 Seal member, etching apparatus, and a method of manufacturing a semiconductor device 有权
标题翻译：密封部件，蚀刻装置以及半导体装置的制造方法
公开(公告)号：US09111969B2
公开(公告)日：2015-08-18
申请号：US13761359
申请日：2013-02-07
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hideo Eto , Makoto Saito
IPC分类号： H01L21/00 , H01L21/67 , H01L21/3065 , F16J15/12 , H01J37/32
CPC分类号： H01L21/67069 , F16J15/122 , H01J37/32091 , H01J37/32532 , H01L21/3065
摘要： Provided is a seal member according to embodiments. The seal member is disposed between an upper electrode and a backing plate in an etching apparatus to seal a gap between the upper electrode and the backing plate. In addition, the seal member is configured to include a high heat conductivity member having a heat conductivity higher than that of a first member formed by using siloxane bond and a low resistance member having a resistivity lower than that of the first member.
摘要翻译：提供了根据实施例的密封构件。密封构件设置在蚀刻装置中的上电极和背板之间，以密封上电极和背板之间的间隙。此外，密封构件被构造成包括导热率高于通过使用硅氧烷键形成的第一构件的导热性的高导热性构件和具有比第一构件的电阻率低的电阻率的低电阻构件。

5. 发明申请

US20140231251A1 GAS SUPPLY MEMBER, PLASMA PROCESSING APPARATUS AND METHOD OF FABRICATING GAS SUPPLY MEMBER 审中-公开
标题翻译：气体供应构件，等离子体处理装置和制造气体供应构件的方法
公开(公告)号：US20140231251A1
公开(公告)日：2014-08-21
申请号：US14180712
申请日：2014-02-14
申请人： Kabushiki Kaisha Toshiba
发明人： Hisashi Hashiguchi , Makoto Saito , Hideo Eto
IPC分类号： H01J37/32
CPC分类号： C23C16/5096 , C23C16/45565 , C23C24/04 , H01J37/3244 , H01J37/32449 , H01J37/32541
摘要： An aspect of the present embodiment, there is provided a gas supply member includes a body, and a gas supply path penetrating into the body, the gas supply path including a first channel at an inlet side and a second channel connected to the first channel at an outlet side, the first channel having a first diameter and a diameter of the second channel being monotonically increased towards the outlet side from the first diameter to a second diameter, wherein an alumina film is provided on a first sidewall of the first channel, an yttrium-containing film is provided on a second sidewall of the second channel and a surface of the body at the outlet side.
摘要翻译：本实施例的一个方面，提供一种气体供给构件，其包括主体和贯穿主体的气体供给路径，气体供给路径包括在入口侧的第一通道和连接到第一通道的第二通道出口侧，具有第一直径的第一通道和第二通道的直径从第一直径的出口侧单调地增加到第二直径，其中氧化铝膜设置在第一通道的第一侧壁上，含钇膜设置在第二通道的第二侧壁和在出口侧的主体的表面。

6. 发明授权

US09248635B2 Electrostatic chuck, mount plate support, and manufacturing method of electrostatic chuck 有权
公开(公告)号：US09248635B2
公开(公告)日：2016-02-02
申请号：US14198779
申请日：2014-03-06
申请人： Kabushiki Kaisha Toshiba
发明人： Hideo Eto , Yasuhiro Nojiri , Makoto Saito
IPC分类号： H01T23/00 , B32B37/12 , H01L21/67 , H01L21/683
摘要： According to one embodiment, an electrostatic chuck comprises a mount plate, a first layer, and a second layer. The first layer includes a heater. The second layer is provided between the mount plate and the first layer. The second layer transmits heat from the heater to the mount plate. The second layer includes a compressive attachment portion. The compressive attachment portion is formed at the outer edge. The face on the mount plate side of the compressive attachment portion is compressed and attached to the mount plate. The face on the first layer side of the compressive attachment portion is compressed and attached to the first layer.

7. 发明申请

US20140217891A1 ELECTRODE FOR PLASMA PROCESSING APPARATUS, METHOD FOR MANUFACTURING THE SAME, AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体处理装置的电极，其制造方法和等离子体处理装置
公开(公告)号：US20140217891A1
公开(公告)日：2014-08-07
申请号：US14167364
申请日：2014-01-29
申请人： Kabushiki Kaisha Toshiba
发明人： Hideo ETO , Hirokatsu Sonoda , Hisashi Hashiguchi , Makoto Saito
IPC分类号： H01J37/32 , H01J9/18
CPC分类号： H01J37/32568 , C23C16/45565 , H01J37/32449 , H01J37/32541 , H01J37/32559
摘要： According to embodiments, an inner electrode having a plurality of gas holes includes a first contact surface provided to a part of an outer peripheral surface. An outer electrode includes a second contact surface provided to a part of an inner peripheral surface, corresponding to the first contact surface of the inner electrode. The inner electrode and the outer electrode come into contact with each other on the first and second contact surfaces. A brazing filler metal is filled in a brazing filler metal filling hole that reaches from front side main surfaces of the inner electrode and the outer electrode to the contact surfaces to join the inner electrode and the outer electrode.
摘要翻译：根据实施例，具有多个气孔的内电极包括设置在外周面的一部分的第一接触面。外电极包括设置在内周面的与内电极的第一接触面对应的一部分的第二接触面。内电极和外电极在第一和第二接触表面上彼此接触。钎焊填充金属填充在从内侧电极和外部电极的前侧主表面到接触面到达内部电极和外部电极的钎料填充金属填充孔中。

8. 发明申请

US20170067564A1 VALVE AND SEMICONDUCTOR MANUFACTURING EQUIPMENT 审中-公开
标题翻译：阀门和半导体制造设备
公开(公告)号：US20170067564A1
公开(公告)日：2017-03-09
申请号：US15017815
申请日：2016-02-08
申请人： Kabushiki Kaisha Toshiba
发明人： Eiichi Nagumo , Hiroshi Sanda , Makoto Saito
IPC分类号： F16K3/02 , C23C16/44 , H01J37/32 , F16K3/10 , H01L21/67
CPC分类号： F16K3/0209 , C23C16/44 , F16K3/029 , F16K3/10 , H01J37/32009 , H01J37/32834 , H01L21/67017 , H01L21/67353
摘要： A valve includes a housing which includes a first opening part connectable to a first pipe and a second opening part connectable to a second pipe. A first valve is provided in the housing and is capable of being inserted into or removed from between the first opening part and the second opening part. The first valve includes an outer edge located outside an outer edge of the first or second opening part. The first valve has a third opening part smaller than the first and second opening parts. A second valve is provided in the housing, and is capable of being inserted into or removed from between the first opening part and the second opening part. The second valve includes an outer edge located outside an outer edge of the third opening part. The second valve is capable of closing at least a part of the third opening part.
摘要翻译：阀包括壳体，壳体包括可连接到第一管的第一开口部分和可连接到第二管道的第二开口部分。第一阀设置在壳体中，并且能够插入到第一开口部和第二开口部之间或从第一开口部和第二开口部之间移除。第一阀包括位于第一或第二开口部分的外边缘外侧的外边缘。第一阀具有比第一和第二开口部小的第三开口部。第二阀设置在壳体中，并且能够插入到第一开口部和第二开口部之间或从第一开口部和第二开口部之间移除。第二阀包括位于第三开口部的外边缘外侧的外缘。第二阀能够关闭第三开口部的至少一部分。

9. 发明申请

US20160273110A1 DEPOSITION APPARATUS AND DEPOSITION METHOD 审中-公开
标题翻译：沉积装置和沉积方法
公开(公告)号：US20160273110A1
公开(公告)日：2016-09-22
申请号：US14843729
申请日：2015-09-02
申请人： Kabushiki Kaisha Toshiba
发明人： Hiroshi Sanda , Eiichi Nagumo , Makoto Saito
IPC分类号： C23C16/52 , C23C16/513
CPC分类号： C23C4/134 , B05B7/22 , B05B12/082 , B05B13/0431
摘要： According to one embodiment, a deposition apparatus includes a plasma gun, a detector, and a controller. The plasma gun is capable of ejecting a plasma gas, and is capable of forming a film on a work piece exposed to the plasma gas. The detector detects a temperature or a luminous intensity in the plasma gas in a direction of ejection of the plasma gas. The controller controls a distance between the work piece and the plasma gun based on the temperature or the luminous intensity obtained from the detector, so that the plasma gas has a temperature in a range from a first temperature to a second temperature or a luminous intensity in a range from a first luminous intensity to a second luminous intensity is irradiated to the work piece.
摘要翻译：根据一个实施例，沉积设备包括等离子体枪，检测器和控制器。等离子体枪能够喷射等离子体气体，并且能够在暴露于等离子体气体的工件上形成膜。检测器检测等离子体气体在喷射等离子体气体的方向上的温度或发光强度。控制器基于从检测器获得的温度或发光强度来控制工件和等离子体枪之间的距离，使得等离子体气体具有从第一温度到第二温度的范围内的温度或发光强度从第一发光强度到第二发光强度的范围照射到工件。

10. 发明申请

US20150043122A1 ELECTROSTATIC CHUCK, MOUNT PLATE SUPPORT, AND MANUFACTURING METHOD OF ELECTROSTATIC CHUCK 有权
标题翻译：静电K K OUNT OUNT K K K K K K K K K K K K K K K K K
公开(公告)号：US20150043122A1
公开(公告)日：2015-02-12
申请号：US14198779
申请日：2014-03-06
申请人： Kabushiki Kaisha Toshiba
发明人： Hideo ETO , Yasuhiro Nojiri , Makoto Saito
IPC分类号： H01L21/683 , B32B37/12 , B32B38/00
CPC分类号： B32B37/1284 , H01L21/67103 , H01L21/6831 , Y10T156/1002
摘要： According to one embodiment, an electrostatic chuck comprises a mount plate, a first layer, and a second layer. The first layer includes a heater. The second layer is provided between the mount plate and the first layer. The second layer transmits heat from the heater to the mount plate. The second layer includes a compressive attachment portion. The compressive attachment portion is formed at the outer edge. The face on the mount plate side of the compressive attachment portion is compressed and attached to the mount plate. The face on the first layer side of the compressive attachment portion is compressed and attached to the first layer.
摘要翻译：根据一个实施例，静电卡盘包括安装板，第一层和第二层。第一层包括加热器。第二层设置在安装板和第一层之间。第二层将热量从加热器传递到安装板。第二层包括压缩附着部分。压缩附着部形成在外缘。压缩安装部的安装板侧的面被压缩并安装在安装板上。压缩附着部分的第一层侧的表面被压缩并附着到第一层。

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