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1. 发明授权

US07846846B2 Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewalls 失效
标题翻译：通过处理形成在开口侧壁上的聚合物来防止在高纵横比开口中的蚀刻轮廓弯曲和弯曲的方法
公开(公告)号：US07846846B2
公开(公告)日：2010-12-07
申请号：US11861032
申请日：2007-09-25
申请人： Kallol Bera , Kenny L. Doan , Stephan Wege , Subhash Deshmukh
发明人： Kallol Bera , Kenny L. Doan , Stephan Wege , Subhash Deshmukh
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32137 , H01J37/32449 , H01L21/76802
摘要： High aspect ratio contact openings are etched while preventing bowing or bending of the etch profile by forming a highly conductive thin film on the side wall of each contact opening. The conductivity of the thin film on the side wall is enhanced by ion bombardment carried out periodically during the etch process.
摘要翻译：通过在每个接触开口的侧壁上形成高导电性薄膜来蚀刻高纵横比接触开口，同时防止蚀刻轮廓弯曲或弯曲。通过在蚀刻工艺期间周期性地进行的离子轰击，增强了侧壁上薄膜的导电性。

2. 发明授权

US08231799B2 Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone 有权
标题翻译：具有多个气体注入区域的等离子体反应器装置，其具有用于每个区域的时变单独的可配置气体组成
公开(公告)号：US08231799B2
公开(公告)日：2012-07-31
申请号：US11414026
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/3065 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01L21/31116
摘要： A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.
摘要翻译：用于处理诸如半导体晶片的工件的等离子体反应器具有限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。反应器还包括含有不同气体种类的多个气体源，多个处理气体入口和能够将所述多个气体源中的任一个耦合到所述多个处理气体入口中的任何一个的阀阵列。反应器还包括控制所述阀阵列的控制器，并被编程为随时间改变通过所述入口的气体的流速。反应器的天花板等离子体源功率电极具有耦合到各个工艺气体入口的多个气体注入区域。在一个优选的实施方案中，多个气体源包括分别含有分别具有不同比例的碳和氟化学物质的碳氟化合物或氟代烃物质的物料。它们还包括氧气或氮气供应和稀释气体供应。控制器被编程为通过不同的所述多个气体注入区域产生不同工艺气体种类或其混合物的流动。控制器进一步被编程为随时间改变流过不同的所述多个气体注入区域的气体的物质含量。

3. 发明授权

US07540971B2 Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content 有权
标题翻译：使用在晶片表面上聚合蚀刻气体的等离子体蚀刻工艺，以及在独立供气气体区域中管理或控制气体的另外的聚合物，其中气体含量随时间和空间调制
公开(公告)号：US07540971B2
公开(公告)日：2009-06-02
申请号：US11414015
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
IPC分类号： H01L21/00 , C23F1/00
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/32449 , H01J2237/3347
摘要： A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through an annular zone of gas injection orifices in the ceiling electrode, and evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece. The high aspect ratio openings are etched in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor by applying VHF source power and/or HF and/or LF bias power to the electrodes at the ceiling and/or the electrostatic chuck. The process further includes slowing the deposition rate of the polymer, minimizing etch stop and/or increasing the etch rate in a region of the workpiece typically the center by injecting oxygen or nitrogen and/or high-fluorine containing gas through gas injection orifice in the corresponding region of the ceiling electrode, and adjusting the flow rate of the oxygen or nitrogen and/or high-fluorine containing gas through the gas injection orifice to minimize the difference between profiles and etch depths at the workpiece center and the workpiece periphery.
摘要翻译：等离子体蚀刻工艺在具有覆盖在工件上的天花板电极的反应器中的工件上的电介质膜中蚀刻高纵横比孔，以及支撑工件的静电卡盘。该方法包括将聚合蚀刻工艺气体注入天花板电极中的气体注入孔的环形区域，以及通过围绕工件边缘的泵送环从反应器排出气体。通过在蚀刻工艺气体中衍生出蚀刻物质，同时将从蚀刻工艺气体衍生的聚合物沉积到工件上，通过在反应器中产生等离子体，通过施加VHF源功率和/或HF来在电介质膜中蚀刻高纵横比开口和/或LF偏压电力到天花板和/或静电卡盘上的电极。该方法进一步包括减缓聚合物的沉积速率，通过在气体喷射孔中注入氧或氮和/或高含氟气体，在工件的区域中通常为中心使蚀刻停止和/或增加蚀刻速率最小化并且通过气体注入孔调节氧气或氮气和/或高含氟气体的流量，以最小化工件中心和工件外围处的轮廓和蚀刻深度之间的差异。

4. 发明授权

US07431859B2 Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation 有权
标题翻译：在具有时间调制的不同径向气体注入区域中使用不同蚀刻和聚合物沉积速率的聚合蚀刻气体的等离子体蚀刻工艺
公开(公告)号：US07431859B2
公开(公告)日：2008-10-07
申请号：US11414017
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
IPC分类号： H01L21/00 , C23F1/00
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/32449
摘要： A plasma etch process includes injecting process gases with different compositions of chemical species through different radial gas injection zones of an overhead electrode to establish a desired distribution of chemical species among the plural gas injection zones.
摘要翻译：等离子体蚀刻工艺包括通过塔顶电极的不同径向气体注入区域注入具有不同组成的化学物质的工艺气体，以在多个气体注入区域之间建立所需的化学物质分布。

5. 发明授权

US07541292B2 Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones 有权
标题翻译：在独立的内部和外部气体注入区域中分别进料碳贫和富碳聚合蚀刻气体的等离子体蚀刻工艺
公开(公告)号：US07541292B2
公开(公告)日：2009-06-02
申请号：US11414027
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
IPC分类号： H01L21/461
CPC分类号： H01L21/76802 , H01J37/32091 , H01J37/3244 , H01J37/3266 , H01J37/32706 , H01J2237/3347 , H01L21/31116
摘要： A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a first polymerizing etch process gas through a radially inward one of plural concentric gas injection zones in the ceiling electrode and injecting a second polymerizing etch process gas through a radially outward one of the plural concentric gas injection zones in the ceiling electrode, the compositions of the first and second process gases having first and second carbon-to-fluorine ratios that differ from one another. The process further includes evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece, and etching the high aspect ratio openings in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor.
摘要翻译：用于蚀刻工件上的电介质膜中的高纵横比开口的等离子体蚀刻工艺在具有覆盖工件的顶部电极的反应器和支撑工件的静电卡盘上进行。该方法包括将第一聚合蚀刻工艺气体通过天花板电极中的多个同心气体注入区的径向向内的一个注入，并且通过天花板电极中的多个同心气体注入区中的径向向外的一个喷射第二聚合蚀刻工艺气体，第一和第二工艺气体的组成具有彼此不同的第一和第二碳 - 氟比率。该方法还包括通过围绕工件边缘的泵送环空将气体从反应器排出，以及用蚀刻工艺气体衍生的蚀刻物质蚀刻电介质膜中的高纵横比开口，同时沉积衍生自蚀刻工艺气体的聚合物通过在反应器中产生等离子体而在工件上。

6. 发明授权

US07316761B2 Apparatus for uniformly etching a dielectric layer 失效
标题翻译：用于均匀蚀刻电介质层的装置
公开(公告)号：US07316761B2
公开(公告)日：2008-01-08
申请号：US10357652
申请日：2003-02-03
申请人： Kenny L. Doan , Yunsang Kim , Mahmoud Dahimene , Jingbao Liu , Bryan Pu , Hongqing Shan , Don Curry
发明人： Kenny L. Doan , Yunsang Kim , Mahmoud Dahimene , Jingbao Liu , Bryan Pu , Hongqing Shan , Don Curry
IPC分类号： H01L21/306 , H01L21/3065 , C23C16/00 , C23C16/455 , C23C16/50 , C23C16/503
CPC分类号： H01J37/32009 , H01J37/3244 , H01J37/32541 , H01J37/3266
摘要： Apparatus for plasma etching a layer of material upon a substrate comprising an anode having a first region protruding from a second region, wherein the second region defines a plane and the first region extends from said plane. In one embodiment, at least one solenoid is disposed near the apparatus to magnetize the plasma.
摘要翻译：一种用于等离子体蚀刻材料层的装置，包括具有从第二区域突出的第一区域的阳极，其中所述第二区域限定平面，并且所述第一区域从所述平面延伸。在一个实施例中，至少一个螺线管设置在设备附近以磁化等离子体。

7. 发明授权

US07105442B2 Ashable layers for reducing critical dimensions of integrated circuit features 失效
标题翻译：用于降低集成电路特性的关键尺寸的可铺层
公开(公告)号：US07105442B2
公开(公告)日：2006-09-12
申请号：US10154532
申请日：2002-05-22
申请人： Hongching Shan , Kenny L. Doan , Jingbao Liu , Michael S. Barnes , Hong D. Nguyen , Christopher Dennis Bencher , Christopher S. Ngai , Wendy H. Yeh , Eda Tuncel , Claes H. Bjorkman
发明人： Hongching Shan , Kenny L. Doan , Jingbao Liu , Michael S. Barnes , Hong D. Nguyen , Christopher Dennis Bencher , Christopher S. Ngai , Wendy H. Yeh , Eda Tuncel , Claes H. Bjorkman
IPC分类号： H01L21/44 , H01L21/31 , H01L21/469
CPC分类号： H01L21/31144 , G03F7/40 , H01L21/02115 , H01L21/02118 , H01L21/0271 , H01L21/31116 , H01L21/312 , H01L21/3146
摘要： A method is described for decreasing the critical dimensions of integrated circuit features in which a first masking layer (101) is deposited, patterned and opened in the manner of typical feature etching, and a second masking layer (201) is deposited thereon prior to etching the underlying insulator. The second masking layer is advantageously coated in a substantially conformal manner. Opening the second masking layer while leaving material of the second layer on the sidewalls of the first masking layer as spacers leads to reduction of the feature critical dimension in the underlying insulator. Ashable masking materials, including amorphous carbon and organic materials are removable without CMP, thereby reducing costs. Favorable results are also obtained utilizing more than one masking layer (101, 301) underlying the topmost masking layer (302) from which the spacers are formed. Embodiments are also described in which slope etching replaces the addition of a separate spacer layer. Substructures formed in the fabrication process are also described. Spacers are also shown to be favorably employed in making feature-in-feature structures.
摘要翻译：描述了一种降低集成电路特征的关键尺寸的方法，其中以典型特征蚀刻的方式沉积，图案化和打开第一掩模层（101），并且在蚀刻之前沉积第二掩模层（201）底层绝缘子。有利地以基本上共形的方式涂覆第二掩模层。打开第二掩蔽层，同时将第二层的材料留在第一掩模层的侧壁上作为间隔物导致下层绝缘体中的特征临界尺寸的减小。包括无定形碳和有机材料在内的可湿性掩蔽材料可以不经CMP去除，从而降低成本。利用形成间隔物的最上面的掩模层（302）下方的多于一个掩模层（101,301）也可获得有利的结果。还描述了其中斜率蚀刻替代单独的间隔层的添加的实施例。还描述了在制造过程中形成的子结构。垫片也被用于制造特征特征结构。

8. 发明授权

US06686293B2 Method of etching a trench in a silicon-containing dielectric material 失效
标题翻译：在含硅介电材料中蚀刻沟槽的方法
公开(公告)号：US06686293B2
公开(公告)日：2004-02-03
申请号：US10144570
申请日：2002-05-10
申请人： Yunsang Kim , Kenny L. Doan , Claes H. Björkman , Hongqing Shan
发明人： Yunsang Kim , Kenny L. Doan , Claes H. Björkman , Hongqing Shan
IPC分类号： H01L21302
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76804 , H01L21/76808 , H01L2221/1063
摘要： Disclosed herein is a method of etching a trench in a silicon-containing dielectric material, in the absence of a trench etch-stop layer, where the silicon-containing dielectric material has a dielectric constant of about 4 or less. The method comprises exposing the dielectric material to a plasma generated from a source gas comprising a fluorine-containing etchant gas and an additive gas selected from the group consisting of carbon monoxide (CO), argon, and combinations thereof. A volumetric flow ratio of the additive gas to the fluorine-containing etchant gas is within the range of about 1.25:1 to about 20:1 (more typically, about 2.5:1 to about 20:1), depending on the particular fluorine-containing etchant gas used. The method provides good control over critical dimensions and etch profile during trench etching. Also disclosed herein is a method of forming a dual damascene structure, without the need for an intermediate etch stop layer.
摘要翻译：本文公开了一种在不存在沟槽蚀刻停止层的情况下，在含硅介电材料中蚀刻沟槽的方法，其中含硅介电材料具有约4或更小的介电常数。该方法包括将电介质材料暴露于由包含含氟蚀刻剂气体和选自一氧化碳（CO），氩气及其组合的添加剂气体的源气体产生的等离子体。添加气体与含氟蚀刻剂气体的体积流量比在约1.25:1至约20:1（更典型地为约2.5:1至约20:1）的范围内，这取决于具体的氟 - 含有腐蚀剂气体。该方法在沟槽蚀刻期间提供了对临界尺寸和蚀刻轮廓的良好控制。本文还公开了形成双镶嵌结构的方法，而不需要中间蚀刻停止层。

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