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1. 发明授权

US07226175B2 Image exposure device and laser exposure device applied thereto 有权
标题翻译：图像曝光装置和应用于其的激光曝光装置
公开(公告)号：US07226175B2
公开(公告)日：2007-06-05
申请号：US11142254
申请日：2005-06-02
申请人： Kenji Matsumoto , Toshiro Hayakawa , Yoshinori Morimoto , Kiichi Kato
发明人： Kenji Matsumoto , Toshiro Hayakawa , Yoshinori Morimoto , Kiichi Kato
IPC分类号： G02B27/00
CPC分类号： G03B27/42
摘要： When a ratio R between a total angle φ of a widening angle in a median intensity of light of a light source (a GaN based semiconductor laser) and a total angle 2/φ of a widening angle of light defining a numerical aperture NA of a collimator optical system (collimator lens) is defined as R=(sin−1NA)×2/φ, the numerical aperture of the collimator optical system (collimator lens) is set so that 2.0≧R≧0.58. Thus, an image exposure device is provided that can suppress stray light of a light source that emits a large amount of stray light.
摘要翻译：当光源（GaN基半导体激光器）的中值光强度中的加宽角的总角度φi与限定数值孔径NA的光的加宽角的总角度2 / phi之间的比率R 准直器光学系统（准直透镜）被定义为R =（sin -1）NA）×2 / phi，准直器光学系统（准直透镜）的数值孔径被设定为使得2.0> = R> = 0.58。因此，提供能够抑制发出大量杂散光的光源的杂散光的图像曝光装置。

2. 发明申请

US20050218413A1 Image exposure device and laser exposure device applied thereto 有权
公开(公告)号：US20050218413A1
公开(公告)日：2005-10-06
申请号：US11142254
申请日：2005-06-02
申请人： Kenji Matsumoto , Toshiro Hayakawa , Yoshinori Morimoto , Kiichi Kato
发明人： Kenji Matsumoto , Toshiro Hayakawa , Yoshinori Morimoto , Kiichi Kato
IPC分类号： G03B27/42 , H01L33/00
CPC分类号： G03B27/42
摘要： When a ratio R between a total angle φ of a widening angle in a median intensity of light of a light source (a GaN based semiconductor laser) and a total angle 2/φ of a widening angle of light defining a numerical aperture NA of a collimator optical system (collimator lens) is defined as R=(sin−1NA)×2/φ, the numerical aperture of the collimator optical system (collimator lens) is set so that 2.0≧R≧0.58. Thus, an image exposure device is provided that can suppress stray light of a light source that emits a large amount of stray light.

3. 发明授权

US06977780B2 Image exposure device and laser exposure device applied thereto 失效
标题翻译：图像曝光装置和应用于其的激光曝光装置
公开(公告)号：US06977780B2
公开(公告)日：2005-12-20
申请号：US10329762
申请日：2002-12-27
申请人： Kenji Matsumoto , Toshiro Hayakawa , Yoshinori Morimoto , Kiichi Kato
发明人： Kenji Matsumoto , Toshiro Hayakawa , Yoshinori Morimoto , Kiichi Kato
IPC分类号： G03B27/42 , G02B13/18
CPC分类号： G03B27/42
摘要： When a ratio R between a total angle φ of a widening angle in a median intensity of light of a light source (a GaN based semiconductor laser) and a total angle 2/φ of a widening angle of light defining a numerical aperture NA of a collimator optical system (collimator lens) is defined as R=(sin−1NA)×2/φ, the numerical aperture of the collimator optical system (collimator lens) is set so that 2.0≧R≧0.58. Thus, an image exposure device is provided that can suppress stray light of a light source that emits a large amount of stray light.
摘要翻译：当光源（GaN基半导体激光器）的中值光强度中的加宽角的总角度φi与限定数值孔径NA的光的加宽角的总角度2 / phi之间的比率R 准直器光学系统（准直透镜）被定义为R =（sin -1）NA）×2 / phi，准直器光学系统（准直透镜）的数值孔径被设定为使得2.0> = R> = 0.58。因此，提供能够抑制发出大量杂散光的光源的杂散光的图像曝光装置。

4. 发明授权

US07095430B2 Image exposing apparatus and image exposing method 失效
公开(公告)号：US07095430B2
公开(公告)日：2006-08-22
申请号：US10328179
申请日：2002-12-26
申请人： Kiichi Kato , Yoshinori Morimoto , Kenji Matsumoto , Toshiro Hayakawa
发明人： Kiichi Kato , Yoshinori Morimoto , Kenji Matsumoto , Toshiro Hayakawa
IPC分类号： B41J2/435
CPC分类号： H04N1/40025
摘要： In an image exposing apparatus and an image exposing method, a deterioration of an image quality caused by stray light is suppressed, while both a sensitive level and a non-sensitive level are properly set in accordance with a type of photosensitive material. In the image exposing apparatus, a recording level setting unit calculates a recording level corresponding to a light amount level stored in a recording level light amount memory and sets the calculated recording level. A non-recording level setting unit calculates a non-recording level from an extinction ratio, which corresponds to a type of photosensitive material stored in a photosensitive material information memory, and the recording level. An output voltage setting unit sets an output voltage such that a detected voltage becomes equal to one of the recording level and the non-recording level.

5. 发明授权

US07466498B2 Exposure device 有权
标题翻译：曝光装置
公开(公告)号：US07466498B2
公开(公告)日：2008-12-16
申请号：US10807404
申请日：2004-03-24
申请人： Kenichi Saito , Toshiro Hayakawa , Kenji Matsumoto , Yoshinori Morimoto
发明人： Kenichi Saito , Toshiro Hayakawa , Kenji Matsumoto , Yoshinori Morimoto
IPC分类号： G02B9/08
CPC分类号： G21K1/02
摘要： In an exposure device, a beam emitted from a light emitting point of a laser diode (LD) is limited by a slit. The slit limits a light beam in a direction orthogonal to an active layer of the LD. The exposure device has a moving mechanism which moves a plate in which the slit is provided, in a direction orthogonal to the plate. Object points are different at a beam and at flare light. Therefore, the plate is provided in a vicinity of the light emitting point in order to limit the light beam in the vicinity of the light emitting point, i.e., at a place near a point where a beam spot is smallest, and to be able to effectively block only the flare light.
摘要翻译：在曝光装置中，从激光二极管（LD）的发光点发射的光束被狭缝限制。狭缝在与LD的有源层正交的方向上限制光束。曝光装置具有沿着与板正交的方向移动设置有狭缝的板的移动机构。物体点在光束和耀斑光下是不同的。因此，为了将光束限制在发光点附近，即在光斑最近点附近的位置，光盘设置在发光点附近，能够有效阻挡耀斑光。

6. 发明授权

US07113530B2 Gallium nitride based semiconductor laser and image exposure device 有权
标题翻译：基于氮化镓的半导体激光器和图像曝光装置
公开(公告)号：US07113530B2
公开(公告)日：2006-09-26
申请号：US10329511
申请日：2002-12-27
申请人： Kenji Matsumoto , Toshiro Hayakawa
发明人： Kenji Matsumoto , Toshiro Hayakawa
IPC分类号： H01S5/00
CPC分类号： B41J2/45 , H01S5/32341
摘要： In order to obtain a visually high quality image with excellent sharpness using a silver halide photosensitive material, it is necessary to reduce the ratio of EL light in the light output from a GaN based laser diode to 20% or less. For example, when the light intensity measured on a sheet of photosensitive paper is 0.05 mW, the thickness of a waveguide is 3 nm and the width of the waveguide is 3 μm, this condition is satisfied with a length of a resonator being 1 mm or less. In other words, a waveguide width W1 and a resonator length L are set such that the product of the waveguide width W1 and the resonator length L (W1·L) becomes 0.003 mm2 or less. This reduces the output ratio of the EL light, and a high quality image with excellent sharpness can be obtained when a silver halide photosensitive material is exposed.
摘要翻译：为了使用卤化银感光材料获得具有优异清晰度的视觉上高质量的图像，需要将从GaN基激光二极管输出的光的EL光的比例降低到20％以下。例如，当在一张感光纸上测量的光强度为0.05mW时，波导的厚度为3nm，波导的宽度为3μm，该条件满足谐振器的长度为1mm或减。换句话说，波导宽度W 1和谐振器长度L被设定为使得波导宽度W 1和谐振器长度L（W 1·L）的乘积成为0.003mm以下2以下。这降低了EL光的输出比，并且当曝光卤化银感光材料时可以获得具有优异清晰度的高质量图像。

7. 发明授权

US07062311B1 Fluorescence observing apparatus 失效
标题翻译：荧光观察装置
公开(公告)号：US07062311B1
公开(公告)日：2006-06-13
申请号：US09611229
申请日：2000-07-06
申请人： Tomonari Sendai , Katsumi Hayashi , Kazuo Hakamata , Toshiro Hayakawa , Yoji Okazaki , Kenji Matsumoto
发明人： Tomonari Sendai , Katsumi Hayashi , Kazuo Hakamata , Toshiro Hayakawa , Yoji Okazaki , Kenji Matsumoto
IPC分类号： A61B6/00
CPC分类号： G01N21/6456 , A61B5/0071 , A61B5/0084 , G01N21/645 , G01N2021/6421 , G01N2201/0612
摘要： A fluorescence observing apparatus including a light source for emitting excitation light, an excitation light irradiation section for irradiating the excitation light to a sample, and a fluorescence measurement section for measuring fluorescence emitted from the sample by the irradiation of the excitation light. In the fluorescence observing apparatus, a GaN semiconductor laser is employed as the light source.
摘要翻译：包括用于发射激发光的光源的荧光观察装置，用于将激发光照射到样品的激发光照射部分和用于通过照射激发光来测量从样品发射的荧光的荧光测量部分。在荧光观察装置中，使用GaN半导体激光器作为光源。

8. 发明授权

US07104704B2 Transmission apparatus using a plastic fiber 失效
标题翻译：使用塑料纤维的传输设备
公开(公告)号：US07104704B2
公开(公告)日：2006-09-12
申请号：US10603078
申请日：2003-06-25
申请人： Kenji Matsumoto , Toshiro Hayakawa
发明人： Kenji Matsumoto , Toshiro Hayakawa
IPC分类号： G02B6/42
CPC分类号： H04B10/2581
摘要： A transmission apparatus comprises a plastic fiber, and a photodetector for detecting light, which has been propagated through the plastic fiber. The photodetector comprises a plurality of semiconductor light receiving devices, whose light receiving sensitivity wavelength regions are identical with one another, each of the semiconductor light receiving devices having a light receiving area smaller than a cross-sectional area of a core of the plastic fiber. The transmission apparatus is capable of achieving both a high light receiving efficiency and quick response characteristics.
摘要翻译：传输装置包括塑料纤维和用于检测已经通过塑料纤维传播的光的光电检测器。光检测器包括多个半导体光接收装置，其光接收灵敏度波长区域彼此相同，每个半导体光接收装置的光接收面积小于塑料纤维的芯的横截面面积。发送装置能够实现高的光接收效率和快速的响应特性。

9. 发明授权

US06885687B2 Semiconductor laser module having optical wavelength conversion element and semiconductor laser element which includes quantum-well sublayers having different thicknesses and/or compositions 有权
标题翻译：具有光波长转换元件和半导体激光元件的半导体激光器模块包括具有不同厚度和/或组成的量子阱子层
公开(公告)号：US06885687B2
公开(公告)日：2005-04-26
申请号：US09840025
申请日：2001-04-24
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： G02B6/02 , G02F1/377 , H01S5/06 , H01S5/065 , H01S5/14 , H01S5/323 , H01S5/00
CPC分类号： H01S5/141 , H01S3/109 , H01S5/005 , H01S5/0092 , H01S5/0656 , H01S5/143 , H01S5/146
摘要： A semiconductor laser module includes: a semiconductor laser element which emits laser light; a waveguide-type optical wavelength selection element which includes an optical waveguide, and selects a first portion of the laser light having a predetermined wavelength; and an optical wavelength conversion element which converts a second portion of the laser light having the predetermined wavelength to wavelength-converted laser light having a converted wavelength. The semiconductor laser element, the waveguide-type optical wavelength selection element, and the optical wavelength conversion element are coupled. The semiconductor laser element contains a multiple-quantum-well active layer including a plurality of quantum-well sublayers, where one of the plurality of quantum-well sublayers is different from another of the plurality of quantum-well sublayers in thickness and/or composition.
摘要翻译：半导体激光器模块包括：发射激光的半导体激光元件; 波导型光波长选择元件，其包括光波导，并且选择具有预定波长的激光的第一部分; 以及光波长转换元件，其将具有预定波长的激光的第二部分转换成具有转换波长的波长转换激光。半导体激光元件，波导型光波长选择元件和光波长转换元件被耦合。半导体激光元件包含多量子阱活性层，其包括多个量子阱子层，其中多个量子阱子层中的一个与厚度和/或组成中的多个量子阱子层中的另一个不同。

10. 发明授权

US06700912B2 High-output semiconductor laser element, high-output semiconductor laser apparatus and method of manufacturing the same 失效
标题翻译：高输出半导体激光元件，高输出半导体激光装置及其制造方法
公开(公告)号：US06700912B2
公开(公告)日：2004-03-02
申请号：US09793138
申请日：2001-02-27
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01S500
CPC分类号： H01S5/2232 , H01S5/2036 , H01S5/223 , H01S5/2231 , H01S5/4043
摘要： A high-output semiconductor laser element includes a plurality of laser structures which are superposed on a substrate one on another with a P+N+-tunnel junction intervening between each pair of the laser structures. Each of the laser structures includes at least one active layer interposed between a P-type clad layer and a N-type clad layer. The active region of each of the laser structures is not smaller than 10 &mgr;m and not larger than 80 &mgr;m in width. The distance h between the active layers which are most distant from each other in the active layers of the laser structures is not larger than the width W of the active region which is the widest in the laser structures. The width of said semiconductor laser element is not smaller than W+2h.
摘要翻译：高输出半导体激光元件包括多个激光器结构，它们叠加在彼此之间的衬底上，并且在每对激光器结构之间插入有P + N + - 隧道结。每个激光结构包括插入在P型覆盖层和N型覆盖层之间的至少一个有源层。每个激光结构的有源区不小于10μm，宽度不大于80μm。在激光结构的有源层中彼此最远的有源层之间的距离h不大于激光结构中最宽的有源区的宽度W. 所述半导体激光元件的宽度不小于W + 2h。

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