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1. 发明授权

US08452919B2 Advanced memory device having improved performance, reduced power and increased reliability 有权
标题翻译：先进的存储器件具有改进的性能，降低的功率和增加的可靠性
公开(公告)号：US08452919B2
公开(公告)日：2013-05-28
申请号：US13567357
申请日：2012-08-06
申请人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
发明人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
IPC分类号： G06F13/00
CPC分类号： G11C7/1078 , G06F11/1028 , G11C7/04 , G11C7/1051 , G11C7/1066 , G11C7/1069 , G11C7/109 , G11C7/22 , G11C7/222 , G11C11/401 , G11C11/406 , G11C11/40611 , G11C11/40615 , G11C11/40626 , G11C11/4076 , G11C11/4096 , G11C29/02 , G11C29/023 , G11C29/028 , G11C2207/2254
摘要： An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要翻译：具有改进性能，降低功耗和增加可靠性的高级内存。存储器件包括存储器阵列，用于接收命令和相关联的数据的接收器，用于对接收到的命令执行错误控制检查的差错控制编码电路以及用于防止相关联的数据被响应地写入存储器阵列的数据屏蔽电路对错误控制编码电路检测接收到的命令中的错误。另一个存储器件包括可编程序序。另一存储器件包括快速退出自刷新模式。另一种存储装置包括由特征装置控制的自动刷新功能。另一存储器件包括由存储器件的特性控制的自动刷新功能。

2. 发明申请

US20110055671A1 ADVANCED MEMORY DEVICE HAVING IMPROVED PERFORMANCE, REDUCED POWER AND INCREASED RELIABILITY 有权
标题翻译：具有改进性能，降低功耗和提高可靠性的高级存储设备
公开(公告)号：US20110055671A1
公开(公告)日：2011-03-03
申请号：US12553400
申请日：2009-09-03
申请人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
发明人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
IPC分类号： G11C7/00 , G11C8/18 , H03M13/09 , G06F11/07 , G06F11/10
CPC分类号： G11C7/1078 , G06F11/1028 , G11C7/04 , G11C7/1051 , G11C7/1066 , G11C7/1069 , G11C7/109 , G11C7/22 , G11C7/222 , G11C11/401 , G11C11/406 , G11C11/40611 , G11C11/40615 , G11C11/40626 , G11C11/4076 , G11C11/4096 , G11C29/02 , G11C29/023 , G11C29/028 , G11C2207/2254
摘要： An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要翻译：具有改进性能，降低功耗和增加可靠性的高级内存。存储器件包括存储器阵列，用于接收命令和相关联的数据的接收器，用于对接收到的命令执行错误控制检查的差错控制编码电路以及用于防止相关联的数据被响应地写入存储器阵列的数据屏蔽电路对错误控制编码电路检测接收到的命令中的错误。另一个存储器件包括可编程序序。另一存储器件包括快速退出自刷新模式。另一种存储装置包括由特征装置控制的自动刷新功能。另一存储器件包括由存储器件的特性控制的自动刷新功能。

3. 发明申请

US20120300563A1 ADVANCED MEMORY DEVICE HAVING IMPROVED PERFORMANCE, REDUCED POWER AND INCREASED RELIABILITY 有权
标题翻译：具有改进性能，降低功耗和提高可靠性的高级存储设备
公开(公告)号：US20120300563A1
公开(公告)日：2012-11-29
申请号：US13567353
申请日：2012-08-06
申请人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
发明人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
IPC分类号： G11C7/00
CPC分类号： G11C7/1078 , G06F11/1028 , G11C7/04 , G11C7/1051 , G11C7/1066 , G11C7/1069 , G11C7/109 , G11C7/22 , G11C7/222 , G11C11/401 , G11C11/406 , G11C11/40611 , G11C11/40615 , G11C11/40626 , G11C11/4076 , G11C11/4096 , G11C29/02 , G11C29/023 , G11C29/028 , G11C2207/2254
摘要： An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要翻译：具有改进性能，降低功耗和增加可靠性的高级内存。存储器件包括存储器阵列，用于接收命令和相关联的数据的接收器，用于对接收到的命令执行错误控制检查的差错控制编码电路以及用于防止相关联的数据被响应地写入存储器阵列的数据屏蔽电路对错误控制编码电路检测接收到的命令中的错误。另一个存储器件包括可编程序序。另一存储器件包括快速退出自刷新模式。另一种存储装置包括由特征装置控制的自动刷新功能。另一存储器件包括由存储器件的特性控制的自动刷新功能。

4. 发明授权

US08659959B2 Advanced memory device having improved performance, reduced power and increased reliability 有权
标题翻译：先进的存储器件具有改进的性能，降低功率和增加可靠性
公开(公告)号：US08659959B2
公开(公告)日：2014-02-25
申请号：US13567353
申请日：2012-08-06
申请人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
发明人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
IPC分类号： G11C7/00
CPC分类号： G11C7/1078 , G06F11/1028 , G11C7/04 , G11C7/1051 , G11C7/1066 , G11C7/1069 , G11C7/109 , G11C7/22 , G11C7/222 , G11C11/401 , G11C11/406 , G11C11/40611 , G11C11/40615 , G11C11/40626 , G11C11/4076 , G11C11/4096 , G11C29/02 , G11C29/023 , G11C29/028 , G11C2207/2254
摘要： An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要翻译：具有改进性能，降低功耗和增加可靠性的高级内存。存储器件包括存储器阵列，用于接收命令和相关联的数据的接收器，用于对接收到的命令执行错误控制检查的差错控制编码电路以及用于防止相关联的数据被响应地写入存储器阵列的数据屏蔽电路对错误控制编码电路检测接收到的命令中的错误。另一个存储器件包括可编程序序。另一存储器件包括快速退出自刷新模式。另一种存储装置包括由特征装置控制的自动刷新功能。另一存储器件包括由存储器件的特性控制的自动刷新功能。

5. 发明申请

US20120300570A1 ADVANCED MEMORY DEVICE HAVING IMPROVED PERFORMANCE, REDUCED POWER AND INCREASED RELIABILITY 有权
公开(公告)号：US20120300570A1
公开(公告)日：2012-11-29
申请号：US13567357
申请日：2012-08-06
申请人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
发明人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
IPC分类号： G11C11/402
CPC分类号： G11C7/1078 , G06F11/1028 , G11C7/04 , G11C7/1051 , G11C7/1066 , G11C7/1069 , G11C7/109 , G11C7/22 , G11C7/222 , G11C11/401 , G11C11/406 , G11C11/40611 , G11C11/40615 , G11C11/40626 , G11C11/4076 , G11C11/4096 , G11C29/02 , G11C29/023 , G11C29/028 , G11C2207/2254
摘要： An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.

6. 发明授权

US08307270B2 Advanced memory device having improved performance, reduced power and increased reliability 有权
标题翻译：先进的存储器件具有改进的性能，降低的功率和增加的可靠性
公开(公告)号：US08307270B2
公开(公告)日：2012-11-06
申请号：US12553400
申请日：2009-09-03
申请人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
发明人： Kyu-Hyoun Kim , George L. Chiu , Paul W. Coteus , Daniel M. Dreps , Kevin C. Gower , Hillery C. Hunter , Charles A. Kilmer , Warren E. Maule
IPC分类号： G11C29/00
CPC分类号： G11C7/1078 , G06F11/1028 , G11C7/04 , G11C7/1051 , G11C7/1066 , G11C7/1069 , G11C7/109 , G11C7/22 , G11C7/222 , G11C11/401 , G11C11/406 , G11C11/40611 , G11C11/40615 , G11C11/40626 , G11C11/4076 , G11C11/4096 , G11C29/02 , G11C29/023 , G11C29/028 , G11C2207/2254
摘要： An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要翻译：具有改进性能，降低功耗和增加可靠性的先进内存。存储器件包括存储器阵列，用于接收命令和相关联的数据的接收器，用于对接收到的命令执行错误控制检查的差错控制编码电路以及用于防止相关联的数据被响应地写入存储器阵列的数据屏蔽电路对错误控制编码电路检测接收到的命令中的错误。另一个存储器件包括可编程序序。另一存储器件包括快速退出自刷新模式。另一种存储装置包括由特征装置控制的自动刷新功能。另一存储器件包括由存储器件的特性控制的自动刷新功能。

7. 发明申请

US20120020171A1 MEMORY SYSTEM WITH DELAY LOCKED LOOP (DLL) BYPASS CONTROL 有权
标题翻译：具有延迟锁定（DLL）旁路控制的存储器系统
公开(公告)号：US20120020171A1
公开(公告)日：2012-01-26
申请号：US12840879
申请日：2010-07-21
申请人： Kevin C. Gower , Lisa C. Gower , Kyu-Hyoun Kim , Warren E. Maule
发明人： Kevin C. Gower , Lisa C. Gower , Kyu-Hyoun Kim , Warren E. Maule
IPC分类号： G11C8/18 , G11C7/00
CPC分类号： G11C7/22 , G11C7/222 , G11C2207/2227
摘要： A memory system with delay locked loop (DLL) bypass control including a method for accessing memory that includes receiving a memory read command at a memory device. The memory device is configured to operate in a DLL off-mode to bypass a DLL clock as input to generating a read clock. A DLL power-on command is received at the memory device and in response to receiving the DLL power-on command a DLL initialization process is performed at the memory device. The memory read command is serviced at the memory device operating in the DLL off-mode, the servicing overlapping in time with performing the DLL initialization process. The memory device is configured to operate in a DLL on-mode to utilize the DLL clock as input to generating the read clock in response to a specified period of time elapsing. The specified period of time is relative to receiving the DLL power-on command.
摘要翻译：具有延迟锁定环（DLL）旁路控制的存储器系统，包括用于访问存储器的方法，包括在存储器件处接收存储器读命令。存储器件被配置为以DLL关闭模式操作以绕过DLL时钟作为生成读取时钟的输入。在存储器装置处接收到DLL加电命令，并且响应于接收到DLL加电命令，在存储器件执行DLL初始化处理。存储器读取命令在以DLL关闭模式操作的存储器件处被服务，在执行DLL初始化过程时，服务与时间重叠。存储器装置被配置为以模拟DLL操作以利用DLL时钟作为输入，以响应于经过指定的时间段来生成读取时钟。指定的时间段相对于接收DLL上电命令。

8. 发明授权

US08289798B2 Voltage regulator bypass in memory device 有权
标题翻译：存储设备中的电压调节器旁路
公开(公告)号：US08289798B2
公开(公告)日：2012-10-16
申请号：US12725822
申请日：2010-03-17
申请人： Paul W. Coteus , Kevin C. Gower , Kyu-Hyoun Kim
发明人： Paul W. Coteus , Kevin C. Gower , Kyu-Hyoun Kim
IPC分类号： G11C5/14 , G06F1/26
CPC分类号： G11C5/147
摘要： A memory chip comprises an internal voltage regulator that is selectively enabled/disabled to regulate an external voltage used by the memory chip subunit.
摘要翻译：存储器芯片包括内部电压调节器，其被选择性地使能/禁止以调节由存储器芯片子单元使用的外部电压。

9. 发明授权

US08379459B2 Memory system with delay locked loop (DLL) bypass control 有权
标题翻译：具有延迟锁定环（DLL）旁路控制的内存系统
公开(公告)号：US08379459B2
公开(公告)日：2013-02-19
申请号：US12840879
申请日：2010-07-21
申请人： Kyu-Hyoun Kim , Warren E. Maule , Lisa C. Gower
发明人： Kevin C. Gower , Kyu-Hyoun Kim , Warren E. Maule
IPC分类号： G11C7/00 , G11C8/00
CPC分类号： G11C7/22 , G11C7/222 , G11C2207/2227
摘要： A memory system with delay locked loop (DLL) bypass control including a method for accessing memory that includes receiving a memory read command at a memory device. The memory device is configured to operate in a DLL off-mode to bypass a DLL clock as input to generating a read clock. A DLL power-on command is received at the memory device and in response to receiving the DLL power-on command a DLL initialization process is performed at the memory device. The memory read command is serviced at the memory device operating in the DLL off-mode, the servicing overlapping in time with performing the DLL initialization process. The memory device is configured to operate in a DLL on-mode to utilize the DLL clock as input to generating the read clock in response to a specified period of time elapsing. The specified period of time is relative to receiving the DLL power-on command.
摘要翻译：具有延迟锁定环（DLL）旁路控制的存储器系统，包括用于访问存储器的方法，包括在存储器件处接收存储器读取命令。存储器件被配置为以DLL关闭模式操作以绕过DLL时钟作为生成读取时钟的输入。在存储器装置处接收到DLL加电命令，并且响应于接收到DLL加电命令，在存储器件执行DLL初始化处理。存储器读取命令在以DLL关闭模式操作的存储器件处被服务，在执行DLL初始化过程时，服务与时间重叠。存储器装置被配置为以模拟DLL操作以利用DLL时钟作为输入，以响应于经过指定的时间段来生成读取时钟。指定的时间段相对于接收到DLL上电命令。

10. 发明申请

US20120124532A1 IMPLEMENTING VERTICAL DIE STACKING TO DISTRIBUTE LOGICAL FUNCTION OVER MULTIPLE DIES IN THROUGH-SILICON-VIA STACKED SEMICONDUCTOR DEVICE 有权
标题翻译：通过堆叠式半导体器件实现通过硅片分散多个DIES的逻辑功能实现垂直模块堆叠
公开(公告)号：US20120124532A1
公开(公告)日：2012-05-17
申请号：US12944020
申请日：2010-11-11
申请人： Paul W. Coteus , Kyu-Hyoun Kim , Robert B. Tremaine
发明人： Paul W. Coteus , Kyu-Hyoun Kim , Robert B. Tremaine
IPC分类号： G06F17/50
CPC分类号： H01L25/0657 , G11C5/04 , G11C17/143 , G11C17/16 , G11C29/12 , G11C29/785 , G11C29/802 , G11C2229/763 , G11C2229/766 , H01L23/481 , H01L25/18 , H01L2224/13025 , H01L2224/16145 , H01L2225/06513 , H01L2225/06544 , H01L2225/06565
摘要： A method and circuit for implementing die stacking to distribute a logical function over multiple dies, die identification and sparing in through-silicon-via stacked semiconductor devices, and a design structure on which the subject circuit resides are provided. Each die in the die stack includes predefined functional logic for implementing a respective predefined function. The respective predefined function is executed in each respective die and a respective functional result is provided to an adjacent die in the die stack. Each die in the die stack includes logic for providing die identification. An operational die signature is formed by combining a plurality of selected signals on each die. A die signature is coupled to a next level adjacent die using TSV interconnections where it is combined with that die signature.
摘要翻译：一种用于实现芯片堆叠以在多个裸片上分布逻辑功能的方法和电路，以及提供了通过硅片通过堆叠的半导体器件的裸片识别和备用，以及设置有被摄体电路的设计结构。管芯堆叠中的每个管芯包括用于实现相应的预定义功能的预定义功能逻辑。在每个相应的管芯中执行相应的预定义功能，并且将相应的功能结果提供给管芯堆叠中的相邻管芯。管芯堆叠中的每个管芯包括用于提供管芯识别的逻辑。通过组合每个管芯上的多个选择的信号来形成操作管芯签名。使用TSV互连将芯片签名耦合到下一级相邻裸片，其中它与该芯片签名组合。

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