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1. 发明申请

US20170256393A1 Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning 审中-公开
公开(公告)号：US20170256393A1
公开(公告)日：2017-09-07
申请号：US15598166
申请日：2017-05-17
申请人： Lam Research Corporation
发明人： Keechan Kim , Jack Chen , Yunsang Kim , Kenneth George Delfin
IPC分类号： H01L21/28 , H01L21/67 , H01J37/32 , H01L21/02
CPC分类号： H01L21/02057 , H01J37/32091 , H01J37/32385 , H01J37/32403 , H01L21/02087 , H01L21/0209 , H01L21/67028
摘要： A lower electrode plate receives radiofrequency power. A first upper plate is positioned parallel to and spaced apart from the lower electrode plate. A grounded second upper plate is positioned next to the first upper plate. A dielectric support provides support of a workpiece within a region between the lower electrode plate and the first upper plate. A purge gas is supplied at a central location of the first upper plate. A process gas is supplied to a periphery of the first upper plate. The dielectric support positions the workpiece proximate and parallel to the first upper plate, such that the purge gas flows over a top surface of the workpiece so as to prevent the process gas from flowing over the top surface of the workpiece, and so as to cause the process gas to flow around a peripheral edge of the workpiece and below the workpiece.

2. 发明申请

US20150099365A1 TUNABLE UPPER PLASMA-EXCLUSION-ZONE RING FOR A BEVEL ETCHER 审中-公开
标题翻译：用于水蚀蚀刻器的TUNABLE UPPER等离子体环形环
公开(公告)号：US20150099365A1
公开(公告)日：2015-04-09
申请号：US14046206
申请日：2013-10-04
申请人： Lam Research Corporation
发明人： Jack Chen , Adam Liron , Gregory Sexton
IPC分类号： H01L21/02 , H01L21/67 , H01L21/3065 , H01J37/32
CPC分类号： H01L21/02087 , H01J37/32091 , H01J37/32385 , H01J37/32642 , H01L21/67069 , Y10T29/49817
摘要： A bevel etcher for cleaning a bevel edge of a semiconductor substrate with plasma includes a lower electrode assembly having a lower support having a cylindrical top portion. An upper dielectric component is disposed above the lower electrode assembly having a cylindrical bottom portion opposing the top portion of the lower support. A tunable upper plasma exclusion zone (PEZ) ring surrounds the bottom portion of the dielectric component, wherein a lower surface of the tunable upper PEZ ring includes an upwardly tapered outer portion extending outwardly from the bottom portion of the upper dielectric component, wherein a vertical height of an adjustable gap between the lower surface of the upper PEZ ring and an upper surface of a substrate supported on the lower support can be increased or decreased such that the extent of the bevel edge of the substrate to be cleaned by the plasma can respectively be adjusted radially inward or radially outward. At least one radio frequency (RF) power source is adapted to energize process gas into the plasma during a bevel edge cleaning process.
摘要翻译：用于用等离子体清洁半导体衬底的斜边缘的斜面蚀刻器包括具有具有圆柱形顶部的下支撑件的下电极组件。上部电介质部件设置在下部电极组件的上方，该电极组件具有与下部支撑件的顶部相对的圆柱形底部。可调谐上等离子体隔离区（PEZ）环围绕电介质部件的底部，其中可调谐上PEZ环的下表面包括从上介电部件的底部向外延伸的向上锥形的外部，其中垂直可以增加或减少上PEZ环的下表面和支撑在下支撑件上的基底的上表面之间的可调节间隙的高度，使得待等离子体待清洁的基底的斜边的范围可分别径向向内或径向向外调节。至少一个射频（RF）电源适于在斜边清洁过程期间将处理气体激发到等离子体中。

3. 发明授权

US10937634B2 Tunable upper plasma-exclusion-zone ring for a bevel etcher 有权
公开(公告)号：US10937634B2
公开(公告)日：2021-03-02
申请号：US14046206
申请日：2013-10-04
申请人： Lam Research Corporation
发明人： Jack Chen , Adam Liron , Gregory Sexton
IPC分类号： H01J37/32 , H01L21/02 , H01L21/67
摘要： A bevel etcher for cleaning a bevel edge of a semiconductor substrate with plasma includes a lower electrode assembly having a lower support having a cylindrical top portion. An upper dielectric component is disposed above the lower electrode assembly having a cylindrical bottom portion opposing the top portion of the lower support. A tunable upper plasma exclusion zone (PEZ) ring surrounds the bottom portion of the dielectric component, wherein a lower surface of the tunable upper PEZ ring includes an upwardly tapered outer portion extending outwardly from the bottom portion of the upper dielectric component, wherein a vertical height of an adjustable gap between the lower surface of the upper PEZ ring and an upper surface of a substrate supported on the lower support can be increased or decreased such that the extent of the bevel edge of the substrate to be cleaned by the plasma can respectively be adjusted radially inward or radially outward. At least one radio frequency (RF) power source is adapted to energize process gas into the plasma during a bevel edge cleaning process.

4. 发明申请

US20150020848A1 Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning 审中-公开
标题翻译：原位晶圆边缘和背面等离子体清洁的系统和方法
公开(公告)号：US20150020848A1
公开(公告)日：2015-01-22
申请号：US14032165
申请日：2013-09-19
申请人： Lam Research Corporation
发明人： Keechan Kim , Jack Chen , Yunsang Kim , Kenneth George Delfin
IPC分类号： H01L21/02 , H01L21/67
CPC分类号： H01L21/02057 , H01J37/32091 , H01J37/32385 , H01J37/32403 , H01L21/02087 , H01L21/0209 , H01L21/67028
摘要： A lower electrode plate receives radiofrequency power. A first upper plate is positioned parallel to and spaced apart from the lower electrode plate. A grounded second upper plate is positioned next to the first upper plate. A dielectric support provides support of a workpiece within a region between the lower electrode plate and the first upper plate. A purge gas is supplied at a central location of the first upper plate. A process gas is supplied to a periphery of the first upper plate. The dielectric support positions the workpiece proximate and parallel to the first upper plate, such that the purge gas flows over a top surface of the workpiece so as to prevent the process gas from flowing over the top surface of the workpiece, and so as to cause the process gas to flow around a peripheral edge of the workpiece and below the workpiece.
摘要翻译：下电极板接收射频电力。第一上板与下电极板平行且间隔开定位。接地的第二上板位于第一上板的旁边。电介质支撑件在下电极板和第一上板之间的区域内提供对工件的支撑。净化气体在第一上板的中心位置供应。处理气体被供给到第一上板的周边。电介质支撑件使工件靠近并平行于第一上板，使得吹扫气体在工件的顶表面上流动，以防止工艺气体流过工件的顶表面，从而导致工艺气体围绕工件的周边边缘流动并在工件下面。

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