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    • 1. 发明申请
    • TMR READER STRUCTURE AND PROCESS FOR FABRICATION
    • TMR读取器结构和制造过程
    • US20120127615A1
    • 2012-05-24
    • US12954334
    • 2010-11-24
    • Liubo HongHonglin ZhuTsann LinZheng Gao
    • Liubo HongHonglin ZhuTsann LinZheng Gao
    • G11B5/33G01R33/32
    • G11B5/3912G01R33/098G11B5/3163G11B5/3932
    • The present invention generally relates to a TMR reader and a method for its manufacture. The TMR reader discussed herein adds a shield layer to the sensor structure. The shield layer is deposited over the capping layer so that the shield layer and the capping layer collectively protect the free magnetic layer within the sensor structure from damage during further processing. Additionally, the hard bias layer is shaped such that the entire hard bias layer underlies the hard bias capping layer so that a top lead layer is not present. By eliminating the top lead layer and including a shield layer within the sensor structure, the read gap is reduced while still protecting the free magnetic layer during later processing.
    • 本发明一般涉及TMR读取器及其制造方法。 本文中讨论的TMR读取器将一个屏蔽层添加到传感器结构。 屏蔽层沉积在覆盖层上,使得屏蔽层和覆盖层共同保护传感器结构内的自由磁性层免受进一步处理期间的损坏。 此外,硬偏压层被成形为使得整个硬偏压层位于硬偏压覆盖层的下面,使得顶部引线层不存在。 通过消除顶部引线层并且在传感器结构内包括屏蔽层,读取间隙减小,同时在稍后处理期间仍然保护自由磁性层。
    • 2. 发明授权
    • TMR reader structure having shield layer
    • 具有屏蔽层的TMR读取器结构
    • US08553370B2
    • 2013-10-08
    • US12954334
    • 2010-11-24
    • Liubo HongHonglin ZhuTsann LinZheng Gao
    • Liubo HongHonglin ZhuTsann LinZheng Gao
    • G11B5/39
    • G11B5/3912G01R33/098G11B5/3163G11B5/3932
    • The present invention generally relates to a TMR reader and a method for its manufacture. The TMR reader discussed herein adds a shield layer to the sensor structure. The shield layer is deposited over the capping layer so that the shield layer and the capping layer collectively protect the free magnetic layer within the sensor structure from damage during further processing. Additionally, the hard bias layer is shaped such that the entire hard bias layer underlies the hard bias capping layer so that a top lead layer is not present. By eliminating the top lead layer and including a shield layer within the sensor structure, the read gap is reduced while still protecting the free magnetic layer during later processing.
    • 本发明一般涉及TMR读取器及其制造方法。 本文中讨论的TMR读取器将一个屏蔽层添加到传感器结构。 屏蔽层沉积在覆盖层上,使得屏蔽层和覆盖层共同保护传感器结构内的自由磁性层免受进一步处理期间的损坏。 此外,硬偏压层被成形为使得整个硬偏压层位于硬偏压覆盖层的下面,使得顶部引线层不存在。 通过消除顶部引线层并且在传感器结构内包括屏蔽层,读取间隙减小,同时在稍后处理期间仍然保护自由磁性层。
    • 6. 发明申请
    • METHOD AND SYSTEM FOR PROVIDING A HARD BIAS CAPPING LAYER
    • 一种用于提供硬偏置覆盖层的方法和系统
    • US20090244789A1
    • 2009-10-01
    • US12060724
    • 2008-04-01
    • Liubo HongHonglin Zhu
    • Liubo HongHonglin Zhu
    • G11B5/33
    • H01L43/12H01L43/08
    • The method and system for providing a magnetoresistive device are disclosed. The magnetoresistive device is formed from a plurality of magnetoresistive layer. The method and system include providing a mask. The mask covers a first portion of the magnetoresistive element layers in at least one device area. The magnetoresistive element(s) are defined using the mask. The method and system include depositing hard bias layer(s). The method and system also include providing a hard bias capping structure on the hard bias layer(s). The hard bias capping structure includes a first protective layer and a planarization stop layer. The first protective layer resides between the planarization stop layer and the hard bias layer(s). The method and system also include performing a planarization. The planarization stop layer is configured for the planarization.
    • 公开了一种提供磁阻器件的方法和系统。 磁阻器件由多个磁阻层形成。 该方法和系统包括提供掩模。 掩模在至少一个器件区域中覆盖磁阻元件层的第一部分。 使用掩模限定磁阻元件。 该方法和系统包括沉积硬偏压层。 该方法和系统还包括在硬偏压层上提供硬偏压盖结构。 硬偏压盖结构包括第一保护层和平坦化停止层。 第一保护层位于平坦化停止层和硬偏压层之间。 该方法和系统还包括执行平面化。 平坦化停止层被配置为用于平坦化。
    • 7. 发明授权
    • Magnetoresistive device with a hard bias capping layer
    • 具有硬偏压盖层的磁阻器件
    • US08614864B1
    • 2013-12-24
    • US13467354
    • 2012-05-09
    • Liubo HongHonglin Zhu
    • Liubo HongHonglin Zhu
    • G11B5/39
    • H01L43/12H01L43/08
    • A magnetoresistive device is provided. The device includes at least one magnetoresistive element having at least one side, at least one hard bias layer in proximity to the at least one side of the at least one magnetic element, and a hard bias capping structure on the at least one hard bias layer. The hard bias capping structure includes a protective layer covering at least a first portion of the at least one hard bias layer and a planarization stop layer covering a second portion of the at least one hard bias layer. A portion of the protective layer resides between the planarization stop layer and the at least one hard bias layer.
    • 提供了一种磁阻器件。 该器件包括至少一个具有至少一个侧面的磁阻元件,在至少一个磁性元件的至少一个侧面附近的至少一个硬偏置层,以及在该至少一个硬偏置层上的硬偏压封盖结构 。 所述硬偏压封盖结构包括覆盖所述至少一个硬偏置层的至少第一部分的保护层和覆盖所述至少一个硬偏置层的第二部分的平坦化停止层。 保护层的一部分位于平坦化停止层和至少一个硬偏压层之间。