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1. 发明申请

US20120127615A1 TMR READER STRUCTURE AND PROCESS FOR FABRICATION 有权
标题翻译： TMR读取器结构和制造过程
公开(公告)号：US20120127615A1
公开(公告)日：2012-05-24
申请号：US12954334
申请日：2010-11-24
申请人： Liubo Hong , Honglin Zhu , Tsann Lin , Zheng Gao
发明人： Liubo Hong , Honglin Zhu , Tsann Lin , Zheng Gao
IPC分类号： G11B5/33 , G01R33/32
CPC分类号： G11B5/3912 , G01R33/098 , G11B5/3163 , G11B5/3932
摘要： The present invention generally relates to a TMR reader and a method for its manufacture. The TMR reader discussed herein adds a shield layer to the sensor structure. The shield layer is deposited over the capping layer so that the shield layer and the capping layer collectively protect the free magnetic layer within the sensor structure from damage during further processing. Additionally, the hard bias layer is shaped such that the entire hard bias layer underlies the hard bias capping layer so that a top lead layer is not present. By eliminating the top lead layer and including a shield layer within the sensor structure, the read gap is reduced while still protecting the free magnetic layer during later processing.
摘要翻译：本发明一般涉及TMR读取器及其制造方法。本文中讨论的TMR读取器将一个屏蔽层添加到传感器结构。屏蔽层沉积在覆盖层上，使得屏蔽层和覆盖层共同保护传感器结构内的自由磁性层免受进一步处理期间的损坏。此外，硬偏压层被成形为使得整个硬偏压层位于硬偏压覆盖层的下面，使得顶部引线层不存在。通过消除顶部引线层并且在传感器结构内包括屏蔽层，读取间隙减小，同时在稍后处理期间仍然保护自由磁性层。

2. 发明授权

US08553370B2 TMR reader structure having shield layer 有权
标题翻译：具有屏蔽层的TMR读取器结构
公开(公告)号：US08553370B2
公开(公告)日：2013-10-08
申请号：US12954334
申请日：2010-11-24
申请人： Liubo Hong , Honglin Zhu , Tsann Lin , Zheng Gao
发明人： Liubo Hong , Honglin Zhu , Tsann Lin , Zheng Gao
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G01R33/098 , G11B5/3163 , G11B5/3932
摘要： The present invention generally relates to a TMR reader and a method for its manufacture. The TMR reader discussed herein adds a shield layer to the sensor structure. The shield layer is deposited over the capping layer so that the shield layer and the capping layer collectively protect the free magnetic layer within the sensor structure from damage during further processing. Additionally, the hard bias layer is shaped such that the entire hard bias layer underlies the hard bias capping layer so that a top lead layer is not present. By eliminating the top lead layer and including a shield layer within the sensor structure, the read gap is reduced while still protecting the free magnetic layer during later processing.
摘要翻译：本发明一般涉及TMR读取器及其制造方法。本文中讨论的TMR读取器将一个屏蔽层添加到传感器结构。屏蔽层沉积在覆盖层上，使得屏蔽层和覆盖层共同保护传感器结构内的自由磁性层免受进一步处理期间的损坏。此外，硬偏压层被成形为使得整个硬偏压层位于硬偏压覆盖层的下面，使得顶部引线层不存在。通过消除顶部引线层并且在传感器结构内包括屏蔽层，读取间隙减小，同时在稍后处理期间仍然保护自由磁性层。

3. 发明授权

US08427791B2 Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same 有权
标题翻译：具有磁性插入层的磁性隧道结及其制造方法
公开(公告)号：US08427791B2
公开(公告)日：2013-04-23
申请号：US12953233
申请日：2010-11-23
申请人： Zheng Gao , Liubo Hong , Richard Hsiao , Sangmun Oh , Chando Park , Chang-Man Park
发明人： Zheng Gao , Liubo Hong , Richard Hsiao , Sangmun Oh , Chando Park , Chang-Man Park
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3163 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/12 , Y10T428/1114 , Y10T428/1121
摘要： According to one embodiment, a magnetic head includes a barrier layer having a crystalline structure, a first magnetic layer above the barrier layer, a magnetic insertion layer above the first magnetic layer, and a second magnetic layer above the magnetic insertion layer, the second magnetic layer having a textured face-centered cubic (fcc) structure. The first magnetic layer comprises a high spin polarization magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the barrier layer than a crystalline structure of the second magnetic layer and the magnetic insertion layer comprises a magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the second magnetic layer than the crystalline structure of the barrier layer. Additional magnetic head structures and methods of producing magnetic heads are described according to more embodiments.
摘要翻译：根据一个实施例，磁头包括具有晶体结构的阻挡层，阻挡层上方的第一磁性层，第一磁性层上方的磁性插入层和磁性插入层上方的第二磁性层，第二磁性层层具有纹理的面心立方（fcc）结构。第一磁性层包括具有晶体结构的高自旋极化磁性材料，并且与第二磁性层的结晶结构相比，结晶的结晶特性与阻挡层的晶体结构更相似，并且磁性插入层包括具有与阻挡层的晶体结构相比，晶体结构和结晶特性更类似于第二磁性层的晶体结构。根据更多实施例描述附加的磁头结构和制造磁头的方法。

4. 发明申请

US20120164757A1 Method for Junction Isolation to Reduce Junction Damage for a TMR Sensor 失效
标题翻译：用于结点隔离的方法，以减少TMR传感器的接合损伤
公开(公告)号：US20120164757A1
公开(公告)日：2012-06-28
申请号：US12979055
申请日：2010-12-27
申请人： Zheng Gao , Liubo Hong , Richard Hsiao , Kochan Ju , Stefan Maat
发明人： Zheng Gao , Liubo Hong , Richard Hsiao , Kochan Ju , Stefan Maat
IPC分类号： H01L21/02
CPC分类号： H01L43/08 , G01R33/098 , G11B5/1278 , G11B5/3163 , G11B5/3909 , G11B2005/3996 , H01L43/12
摘要： The present invention provides a method for manufacturing a TMR sensor that reduces damage to a sensor stack during intermediate stages of the manufacturing process. In an embodiment of the invention, after formation of a sensor stack, a protective layer is deposited on the sensor stack that provides protection from materials that may be used in subsequent steps of the manufacturing process. The protective layer is subsequently converted to an insulating layer and the thickness of the insulating layer is extended to an appropriate thickness. In converting the protective layer to an insulating layer, the sensor stack is not directly exposed to materials that may damage it. For example, in an embodiment of the invention, Mg is used as the protective layer that is subsequently converted to MgO with the introduction of oxygen. Although direct contact of oxygen with the sensor stack may cause damage to the sensor stack, direct contact is avoided by the present invention. Subsequently, the thickness of the insulating layer, in this example can be extended to an appropriate thickness without exposing the sensor stack to damage causing oxygen and inter-diffusion.
摘要翻译：本发明提供一种用于制造TMR传感器的方法，该方法在制造过程的中间阶段降低对传感器堆叠的损坏。在本发明的一个实施例中，在形成传感器堆叠之后，保护层沉积在传感器堆叠上，该保护层提供了防止可能在制造过程的随后步骤中使用的材料。随后将保护层转化为绝缘层，并将绝缘层的厚度延伸至适当的厚度。在将保护层转换为绝缘层时，传感器堆叠不会直接暴露于可能会损坏传感器的材料。例如，在本发明的一个实施方案中，使用Mg作为保护层，随后通过引入氧转化为MgO。尽管氧与传感器堆的直接接触可能导致传感器堆的损坏，但通过本发明避免了直接接触。随后，在该示例中，绝缘层的厚度可以扩展到适当的厚度，而不会使传感器堆不暴露以造成氧和相互扩散。

5. 发明申请

US20120127603A1 MAGNETIC TUNNEL JUNCTION HAVING A MAGNETIC INSERTION LAYER AND METHODS OF PRODUCING THE SAME 有权
标题翻译：具有磁性插入层的磁性隧道结及其制造方法
公开(公告)号：US20120127603A1
公开(公告)日：2012-05-24
申请号：US12953233
申请日：2010-11-23
申请人： Zheng Gao , Liubo Hong , Richard Hsiao , Sangmun Oh , Chando Park , Chang-Man Park
发明人： Zheng Gao , Liubo Hong , Richard Hsiao , Sangmun Oh , Chando Park , Chang-Man Park
IPC分类号： G11B21/02 , B05D5/00 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3163 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/12 , Y10T428/1114 , Y10T428/1121
摘要： According to one embodiment, a magnetic head includes a barrier layer having a crystalline structure, a first magnetic layer above the barrier layer, a magnetic insertion layer above the first magnetic layer, and a second magnetic layer above the magnetic insertion layer, the second magnetic layer having a textured face-centered cubic (fcc) structure. The first magnetic layer comprises a high spin polarization magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the barrier layer than a crystalline structure of the second magnetic layer and the magnetic insertion layer comprises a magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the second magnetic layer than the crystalline structure of the barrier layer. Additional magnetic head structures and methods of producing magnetic heads are described according to more embodiments.
摘要翻译：根据一个实施例，磁头包括具有晶体结构的阻挡层，阻挡层上方的第一磁性层，第一磁性层上方的磁性插入层和磁性插入层上方的第二磁性层，第二磁性层层具有纹理的面心立方（fcc）结构。第一磁性层包括具有晶体结构的高自旋极化磁性材料，并且与第二磁性层的结晶结构相比，结晶的结晶特性与阻挡层的晶体结构更相似，并且磁性插入层包括具有与阻挡层的晶体结构相比，晶体结构和结晶特性更类似于第二磁性层的晶体结构。根据更多实施例描述附加的磁头结构和制造磁头的方法。

6. 发明授权

US09407020B2 Edge mount connector 有权
标题翻译：边缘安装连接器
公开(公告)号：US09407020B2
公开(公告)日：2016-08-02
申请号：US13605691
申请日：2012-09-06
申请人： Zheng Gao , Joshua Funamura , Phillip Satterfield , Bartley K. Andre , Greg Springer , Jason Richard Minahan
发明人： Zheng Gao , Joshua Funamura , Phillip Satterfield , Bartley K. Andre , Greg Springer , Jason Richard Minahan
IPC分类号： H01R12/57 , H01R12/70 , H05K3/34 , H01R12/58 , H01R12/72 , H05K1/18
CPC分类号： H01R12/7082 , H01R12/58 , H01R12/721 , H05K1/184 , H05K3/3405 , H05K2201/09181 , H05K2201/10189 , Y10T29/49149
摘要： Connector receptacles that have a reduced height when combined with a printed circuit board and reduce wasted space inside an electronic device. One example provides a connector receptacle having contacts that may connect to edge contacts along an edge of a printed circuit board. This edge may be formed along a side of printed circuit board, by a hole or opening in a printed circuit board, or by a notch in a printed circuit board. Edge contacts may have straight surfaces, rounded surfaces, or they may have other types of surfaces. Connector receptacle contacts may have a “U,” fishhook, or other shape.
摘要翻译：连接器插座与印刷电路板组合时具有降低的高度，并减少电子设备内的浪费空间。一个示例提供了具有可沿着印刷电路板的边缘连接到边缘触点的触点的连接器插座。该边缘可以沿着印刷电路板的一侧，印刷电路板中的孔或开口或印刷电路板中的凹口形成。边缘触点可以具有直的表面，圆形的表面，或者它们可以具有其他类型的表面。连接器插座触点可能具有“U”，鱼钩或其他形状。

7. 发明授权

US08808030B2 Simplified connector receptacle housings 有权
标题翻译：简化连接器插座外壳
公开(公告)号：US08808030B2
公开(公告)日：2014-08-19
申请号：US12895183
申请日：2010-09-30
申请人： Zheng Gao , Steve McClure , Joshua Banko , Greg Springer , Min Chul Kim , Joshua Funamura
发明人： Zheng Gao , Steve McClure , Joshua Banko , Greg Springer , Min Chul Kim , Joshua Funamura
IPC分类号： H01R13/648
CPC分类号： H01R24/60 , H01R12/725 , H01R13/03 , H01R13/506 , H01R13/6271 , H01R13/6276 , H01R13/6582 , H01R13/741 , H01R2107/00 , H01R2201/06 , H05K5/0247 , Y10T29/49208
摘要： Structures, methods, and apparatus that provide connector receptacles that have a reduced tendency to scratch and otherwise mar connector inserts, have an aesthetically-pleasing appearance, and have an improved tactile response when inserts are inserted. Various examples reduce scratches and wear by utilizing domes, cylinders, balls, or other structures as finger contacts in a connector receptacle. Another example provides aesthetically-pleasing connector receptacle enclosures by forming receptacle enclosures using the same type of material, or material having the same or similar color or texture, as is used for enclosing the electronic device that includes the receptacle. Another example provides an aesthetically-pleasing receptacle enclosure by forming receptacle enclosures that are, in part or in whole, contiguous or formed with the housing. Another embodiment provides a connector receptacle having a housing where a portion of the housing has been removed to save space.
摘要翻译：提供连接器插座的结构，方法和装置具有减少的划痕倾向和另外损坏连接器插入物的美观外观，并且当插入插入件时具有改善的触觉响应。各种示例通过利用圆顶，圆柱，球或其它结构作为连接器插座中的手指接触来减少划痕和磨损。另一个例子通过使用相同类型的材料或具有与用于封闭包括容器的电子设备相同或相似颜色或纹理的材料形成插座外壳来提供美观的连接器插座外壳。另一个例子通过形成与壳体相连或形成的部分或整体上的容器外壳来提供美观令人满意的插座外壳。另一个实施例提供一种具有外壳的连接器插座，其中外壳的一部分被移除以节省空间。

8. 发明授权

US08686524B2 Magnetic stack with oxide to reduce switching current 有权
标题翻译：磁性堆叠与氧化物，以减少开关电流
公开(公告)号：US08686524B2
公开(公告)日：2014-04-01
申请号：US13491763
申请日：2012-06-08
申请人： Xiaohua Lou , Yuankai Zheng , Wenzhong Zhu , Wei Tian , Zheng Gao
发明人： Xiaohua Lou , Yuankai Zheng , Wenzhong Zhu , Wei Tian , Zheng Gao
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/1659 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01F41/303 , H01L43/12
摘要： A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.
摘要翻译：具有铁磁自由层的磁性堆叠，在第一温度下为反铁磁性且在比第一温度高的第二温度下为非磁性的金属氧化物层，铁磁性固定基准层和非磁性间隔层之间，层和参考层。在写入过程中，金属氧化物层是非磁性的。对于诸如磁性隧道结电池的磁存储器单元，金属氧化物层提供降低的开关电流。

9. 发明申请

US20130329324A1 ESD PATH FOR CONNECTOR RECEPTACLE 有权
标题翻译： ESD路径用于连接器插座
公开(公告)号：US20130329324A1
公开(公告)日：2013-12-12
申请号：US13492813
申请日：2012-06-09
申请人： George Tziviskos , Zheng Gao
发明人： George Tziviskos , Zheng Gao
IPC分类号： H01R13/648 , H02H9/04 , H05K5/00
CPC分类号： H01R23/6873 , H01R13/6205 , H01R13/65802 , H01R13/6594 , H01R13/6596 , H05K5/0247 , H05K9/0066 , H05K9/0067
摘要： Circuits, methods, and apparatus that may provide a separation between a signal ground and an enclosure ground such that EMI and ESD circuits are not bypassed. One example may provide a connector receptacle having fingers for contacting a device enclosure, where the fingers are not directly electrically connected to a shell of the connector receptacle. These fingers may be isolated from the shell along a top-side by an electrically insulating layer. These fingers may be further insulated from the shell along a back side by a nonconductive piece or portion of a housing.
摘要翻译：电路，方法和装置，可以提供信号地和外壳接地之间的隔离，使EMI和ESD电路不被旁路。一个示例可以提供具有用于接触设备外壳的指状物的连接器插座，其中手指不直接电连接到连接器插座的外壳。这些指状物可以通过电绝缘层沿着顶部与壳体隔离。这些指状物可以通过非导电片或壳体的一部分沿背侧与壳体进一步绝缘。

10. 发明授权

US08520432B2 Magnetic memory with separate read and write paths 失效
标题翻译：具有独立读写路径的磁记忆体
公开(公告)号：US08520432B2
公开(公告)日：2013-08-27
申请号：US12974699
申请日：2010-12-21
申请人： Yong Lu , Hongyue Liu , Zheng Gao , Insik Jin , Dimitar V. Dimitrov
发明人： Yong Lu , Hongyue Liu , Zheng Gao , Insik Jin , Dimitar V. Dimitrov
IPC分类号： G11C11/14
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.
摘要翻译：公开了具有分离的读和写路径的磁存储器。磁存储器单元包括具有第一磁化取向的第一端部，具有第二磁化取向的相对的第二端部和第一端部与第二端部之间的中间部分的铁磁条，所述中间部分具有自由磁化方向。第一磁化取向与第二磁化取向相反。隧道势垒将磁性参考层与形成磁性隧道结的中间部分分开。位线电耦合到第二端部。源极线电耦合到第一端部，并且读取线电耦合到磁性隧道结。

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