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    • 8. 发明授权
    • Amorphous silicon photosensor
    • 非晶硅光电传感器
    • US5060041A
    • 1991-10-22
    • US270633
    • 1988-11-14
    • Koichi HagaAkishige MurakamiHiroshi Miura
    • Koichi HagaAkishige MurakamiHiroshi Miura
    • H01L31/10H01L31/0224H01L31/075H01L31/20
    • H01L31/202H01L31/022466H01L31/075Y02E10/548Y02P70/521
    • An amorphous silicon photosensor comprising a substrate, a lower electrode formed on the substrate, an amorphous silicon photoelectric conversion layer formed on the lower electrode, and an upper electrode formed on the amorphous silicon photoelectric conversion layer, wherein the substrate is transparent to the incident light for photosensing, the lower electrode and the upper electrode comprises at least one of an electroconductive oxide or an electroconductive nitride, both of the electrodes for receiving the incident light for photosensing being transparent to the incident light, and the amorphous silicon photoelectric conversion layer comprises a plurality of amorphous silicon layers, and at least one of the amorphous silicon layers in contact with the electroconductive oxide or the electroconductive nitride comprises at least one of the same atoms as the constituent atoms of the electroconductive oxide or the electroconductive nitride.
    • 一种非晶硅光电传感器,包括衬底,形成在衬底上的下电极,形成在下电极上的非晶硅光电转换层和形成在非晶硅光电转换层上的上电极,其中衬底对入射光透明 对于光敏,下电极和上电极包括导电氧化物或导电氮化物中的至少一种,用于接收光敏入射光的两个电极对入射光是透明的,并且非晶硅光电转换层包括 多个非晶硅层,并且与导电氧化物或导电氮化物接触的至少一个非晶硅层包括与导电氧化物或导电氮化物的组成原子相同的原子中的至少一个。