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1. 发明申请

US20180163323A1 METHOD FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL AND APPARATUS FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL 审中-公开
公开(公告)号：US20180163323A1
公开(公告)日：2018-06-14
申请号：US15891764
申请日：2018-02-08
申请人： Takashi Satoh , Naoya Miyoshi , Junichi Wada , Masahiro Hayashi , Seiji Sarayama , Haruo Sunakawa , Yujirou Ishihara , Akira Usui
发明人： Takashi Satoh , Naoya Miyoshi , Junichi Wada , Masahiro Hayashi , Seiji Sarayama , Haruo Sunakawa , Yujirou Ishihara , Akira Usui
IPC分类号： C30B29/40 , C30B19/04 , C30B19/06 , C30B19/10 , C30B17/00 , C30B35/00
CPC分类号： C30B29/403 , C30B9/10 , C30B9/12 , C30B17/00 , C30B19/02 , C30B19/04 , C30B19/06 , C30B19/106 , C30B29/406 , C30B35/007
摘要： A method for producing a group 13 nitride single crystal includes dissolving and crystal growing. The dissolving includes dissolving nitrogen in a mixed melt in a reaction vessel that contains the mixed melt, a seed crystal, and a surrounding member. The mixed melt contains an alkali metal and a group 13 metal. The seed crystal is a seed crystal that is placed in the mixed melt and includes a group 13 nitride crystal in which a principal face is a c-plane. The surrounding member is arranged so as to surround the entire area of a side face of the seed crystal. The crystal growing includes growing a group 13 nitride crystal on the seed crystal.

2. 发明申请

US20180139325A1 COMMUNICATION SYSTEM, COMMUNICATION MANAGEMENT METHOD, AND MEDIUM 审中-公开
公开(公告)号：US20180139325A1
公开(公告)日：2018-05-17
申请号：US15574367
申请日：2016-05-20
申请人： Akihiro MIHARA , Junichi WADA
发明人： Akihiro MIHARA , Junichi WADA
IPC分类号： H04M3/51 , H04M3/56
CPC分类号： H04M3/5183 , G06Q10/107 , H04M1/72522 , H04M3/5133 , H04M3/567 , H04M2201/50 , H04N7/147 , H04N7/15 , H04N7/152
摘要： At an actual reception counter, for example, a person in charge of reception can see appearance and belongings of a visitor, and may guess the business of the visitor before the visitor reaches the reception counter. However, in communication between communication terminals, there is a problem about usability such that contents on one side cannot be confirmed on a communication terminal on the other side before requesting communication. To solve the problem, when communication has been established between one or more terminals on a customer side and a terminal on an operator side, the output control unit of the terminal on the operator side executes control for starting output of content data of the terminals on the customer side at the terminal itself. Based on a request for starting output by the terminal on the operator side, the output control unit of the terminal on the customer side executes control for starting output of content data of the terminal on the operator side.

3. 发明申请

US20170022629A1 METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL 审中-公开
标题翻译：硝酸钾晶体生产方法
公开(公告)号：US20170022629A1
公开(公告)日：2017-01-26
申请号：US15124794
申请日：2014-11-27
申请人： Takashi SATOH , Seiji SARAYAMA , Masahiro HAYASHI , Naoya MIYOSHI , Chiharu KIMURA , Junichi WADA
发明人： Takashi SATOH , Seiji SARAYAMA , Masahiro HAYASHI , Naoya MIYOSHI , Chiharu KIMURA , Junichi WADA
IPC分类号： C30B9/10 , C30B29/40
CPC分类号： C30B9/10 , C30B9/12 , C30B29/406 , C30B35/007
摘要： A method for producing a gallium nitride crystal includes growing a gallium nitride crystal 5 by dissolving nitrogen in a mixed melt including gallium and sodium, and collecting the gallium 55 separated from an alloy 51 including the gallium and the sodium by reacting the alloy 51 and a liquid 52 that ionizes the sodium and separating sodium ions and the gallium 55 from the alloy.
摘要翻译：制造氮化镓晶体的方法包括通过将氮溶解在包含镓和钠的混合熔体中来生长氮化镓晶体5，并且通过使合金51和合金51反应而收集从包含镓和钠的合金51中分离的镓55 使钠离子并从合金中分离钠离子和镓55的液体52。

4. 发明申请

US20130240822A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20130240822A1
公开(公告)日：2013-09-19
申请号：US13607464
申请日：2012-09-07
申请人： Junichi WADA
发明人： Junichi WADA
IPC分类号： H01L45/00
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/165
摘要： A nonvolatile memory device includes a first film layer formed on a substrate, and a second film layer formed on the first film layer. The second film layer comprises a first oxide material having a first oxygen content, and a second oxide material disposed laterally of the first oxide material and having a second oxygen content that is greater than the first oxygen content. The memory device also includes a third film layer formed on the second film layer, and the third film layer is disposed on the first oxide material and exposes portions of the second oxide material.
摘要翻译：非易失性存储器件包括形成在衬底上的第一膜层和形成在第一膜层上的第二膜层。第二膜层包括具有第一氧含量的第一氧化物材料和设置在第一氧化物材料侧面并具有大于第一氧含量的第二氧含量的第二氧化物材料。存储装置还包括形成在第二膜层上的第三膜层，并且第三膜层设置在第一氧化物材料上并暴露第二氧化物材料的部分。

5. 发明授权

US08537594B2 Resistance change element and resistance change memory 有权
标题翻译：电阻变化元件和电阻变化记忆
公开(公告)号：US08537594B2
公开(公告)日：2013-09-17
申请号：US13176188
申请日：2011-07-05
申请人： Junichi Wada
发明人： Junichi Wada
IPC分类号： G11C11/00
CPC分类号： H01L45/085 , G11C11/5685 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2213/51 , G11C2213/54 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/1253 , H01L45/145
摘要： According to one embodiment, a resistance change element includes a first film provided on a first electrode side, a second film provided on a second electrode side, a barrier film sandwiched between the first film and the second film, and metal impurities added in the first or second film, the metal impurities migrating between the first and second films bi-directionally according to a direction of a first electric field generated between the first and second electrodes. The resistance change element has a first resistance state when the metal impurities are present in the first film, and the resistance change element has a second resistance state different from the first resistance state when the metal impurities are present in the second film.
摘要翻译：根据一个实施例，电阻改变元件包括设置在第一电极侧的第一膜，设置在第二电极侧的第二膜，夹在第一膜和第二膜之间的阻挡膜，以及添加在第一膜中的金属杂质或第二膜，所述金属杂质根据在所述第一和第二电极之间产生的第一电场的方向双向地在所述第一和第二膜之间迁移。当金属杂质存在于第一膜中时，电阻变化元件具有第一电阻状态，并且当金属杂质存在于第二膜中时，电阻变化元件具有与第一电阻状态不同的第二电阻状态。

6. 发明授权

US07996813B2 Method for generating pattern, method for manufacturing semiconductor device, semiconductor device, and computer program 有权
标题翻译：用于生成图案的方法，制造半导体器件的方法，半导体器件和计算机程序
公开(公告)号：US07996813B2
公开(公告)日：2011-08-09
申请号：US12654865
申请日：2010-01-07
申请人： Masaaki Hatano , Motoya Okazaki , Junichi Wada , Takeshi Nishioka , Hisashi Kaneko , Takeshi Fujimaki , Kazuyuki Higashi , Kenji Yoshida , Noriaki Matsunaga
发明人： Masaaki Hatano , Motoya Okazaki , Junichi Wada , Takeshi Nishioka , Hisashi Kaneko , Takeshi Fujimaki , Kazuyuki Higashi , Kenji Yoshida , Noriaki Matsunaga
IPC分类号： G06F15/04
CPC分类号： G06F17/5068
摘要： A method for generating a pattern includes reading out an interconnect layout and a hole layout, the interconnect layout prescribing interconnect patterns, the hole layout prescribing hole patterns configured to connect to the interconnect patterns; extracting one of the hole patterns to be connected within the same interconnect layer level to one of the interconnect patterns in a pattern processing area; extracting a first processing area including the extracted hole pattern; calculating a first pattern density of the interconnect patterns included in the first processing area; and generating first additional patterns in the first processing area based on the first pattern density.
摘要翻译：一种用于产生图案的方法包括：读出互连布局和孔布局;布置规定互连图案的布局布局;布置配置为连接到互连图案的孔图案的孔布局; 在图案处理区域中将在相同互连层级中连接的孔图案中的一个提取到所述互连图案之一; 提取包括所提取的孔图案的第一处理区域; 计算包括在第一处理区域中的互连图案的第一图案密度; 以及基于所述第一图案密度在所述第一处理区域中生成第一附加图案。

7. 发明授权

US07982575B2 Insulating member 有权
标题翻译：绝缘件
公开(公告)号：US07982575B2
公开(公告)日：2011-07-19
申请号：US11957556
申请日：2007-12-17
申请人： Junichi Wada , Junji Shirai
发明人： Junichi Wada , Junji Shirai
IPC分类号： H01F27/30
CPC分类号： H01F38/12 , H01F27/022 , H01F27/327
摘要： An ignition coil, which includes a primary coil and a secondary coil, has an electrical insulating member. The electrical insulating member includes an insulating material being a base material. The electrical insulating member further includes a reactive agent being an additive added to the insulating material for causing dehydration-decomposition, so as to enhance durability when being applied with high voltage. Alternatively, a reactive agent is coated on a surface of the electrical insulating body for causing dehydration-decomposition, so as to enhance durability when being applied with high voltage.
摘要翻译：包括初级线圈和次级线圈的点火线圈具有电绝缘构件。电绝缘构件包括作为基材的绝缘材料。电绝缘构件还包括添加到绝缘材料中的用于引起脱水分解的添加剂的反应剂，以便在施加高电压时提高耐久性。或者，反应剂涂覆在电绝缘体的表面上以引起脱水分解，以便在施加高电压时提高耐久性。

8. 发明授权

US07923839B2 Semiconductor device and method for fabricating semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07923839B2
公开(公告)日：2011-04-12
申请号：US12408567
申请日：2009-03-20
申请人： Masayuki Kitamura , Junichi Wada , Hideto Matsuyama
发明人： Masayuki Kitamura , Junichi Wada , Hideto Matsuyama
IPC分类号： H01L23/48
CPC分类号： H01L21/76843 , H01L21/28518 , H01L21/28556 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76864 , H01L21/76873 , H01L2221/1089
摘要： A semiconductor device includes a contact plug electrically connected to a semiconductor substrate; a first barrier metal film with a columnar crystal structure arranged in contact with the semiconductor substrate at least on a bottom surface side of the contact plug; an amorphous film made of a material of the first barrier metal film arranged in contact with the first barrier metal film at least on the bottom surface side of the contact plug; a second barrier metal film made of a material identical to that of the first barrier metal film and having a columnar crystal structure, at least a portion of which is arranged in contact with the amorphous film on the bottom surface side and a side surface side of the contact plug; and a dielectric film arranged on the side surface side of the contact plug.
摘要翻译：半导体器件包括电连接到半导体衬底的接触插塞; 具有柱状晶体结构的第一阻挡金属膜至少在所述接触插塞的底面侧与所述半导体衬底接触; 由所述第一阻挡金属膜的材料制成的非晶膜至少在所述接触插塞的底面上与所述第一阻挡金属膜接触; 第二阻挡金属膜，其由与第一阻挡金属膜的材料相同的材料制成，并且具有柱状晶体结构，其至少一部分与底部表面侧的非晶质膜接触，并且侧表面侧接触塞; 以及设置在接触插塞的侧面侧的电介质膜。

9. 发明申请

US20100314602A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20100314602A1
公开(公告)日：2010-12-16
申请号：US12728579
申请日：2010-03-22
申请人： Kensuke Takano , Yoshio Ozawa , Katsuyuki Sekine , Junichi Wada
发明人： Kensuke Takano , Yoshio Ozawa , Katsuyuki Sekine , Junichi Wada
IPC分类号： H01L45/00 , H01L21/28
CPC分类号： H01L45/08 , G11C11/5685 , G11C13/0007 , G11C2213/15 , G11C2213/32 , G11C2213/34 , G11C2213/71 , H01L27/2436 , H01L27/2463 , H01L27/2481 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/1608 , H01L45/1666
摘要： A nonvolatile memory device includes: a first conductive layer; a second conductive layer; a first resistance change layer provided between the first conductive layer and the second conductive layer and having an electrical resistance changing with at least one of an applied electric field and a passed current; and a first lateral layer provided on a lateral surface of the first resistance change layer and having an oxygen concentration higher than an oxygen concentration in the first resistance change layer
摘要翻译：非易失性存储器件包括：第一导电层; 第二导电层; 第一电阻变化层，设置在所述第一导电层和所述第二导电层之间，并且具有通过施加电场和通过电流中的至少一个而改变的电阻; 以及第一侧面层，设置在第一电阻变化层的侧面上，其氧浓度高于第一电阻变化层中的氧浓度

10. 发明申请

US20090009275A1 Ignition coil 有权
标题翻译：点火线圈
公开(公告)号：US20090009275A1
公开(公告)日：2009-01-08
申请号：US12216460
申请日：2008-07-03
申请人： Junichi Wada
发明人： Junichi Wada
IPC分类号： H01F38/12 , H01F27/02
CPC分类号： H01F38/12
摘要： An ignition coil includes a primary coil (14), a secondary coil (16) disposed on an outer circumferential side of the primary coil and configured to be boosted by mutual induction with the primary coil, an outer periphery core (18) having an opposing surface (183), which is opposed to an outer peripheral surface (160) of the secondary coil, and an insulating member (20) disposed between the outer peripheral surface and the opposing surface. The secondary coil and the outer periphery core are arranged such that a shortest distance between the outer peripheral surface and an outer edge (183a, 183b) of the opposing surface is larger than a shortest distance between the outer peripheral surface and the opposing surface.
摘要翻译：点火线圈包括初级线圈（14），次级线圈（16），其设置在初级线圈的外周侧，并且被配置为通过与初级线圈相互感应而升压;外周芯（18），具有相对的与次级线圈的外周面（160）相对的表面（183）和设置在外周面与相对面之间的绝缘部件（20）。次级线圈和外周芯被布置成使得相对表面的外周表面和外边缘（183a，183b）之间的最短距离大于外周表面和相对表面之间的最短距离。

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