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1. 发明授权

US08709687B2 Substrate and patterning device for use in metrology, metrology method and device manufacturing method 有权
标题翻译：用于计量，计量方法和器件制造方法的基板和图案形成装置
公开(公告)号：US08709687B2
公开(公告)日：2014-04-29
申请号：US13401882
申请日：2012-02-22
申请人： Maurits Van Der Schaar , Patrick Warnaar , Kaustuve Bhattacharyya , Hendrik Jan Hidde Smilde , Michael Kubis
发明人： Maurits Van Der Schaar , Patrick Warnaar , Kaustuve Bhattacharyya , Hendrik Jan Hidde Smilde , Michael Kubis
IPC分类号： G03F9/00
CPC分类号： G03F9/7042 , G03F7/70616 , G03F7/70633 , G03F7/70683 , H01L23/544 , H01L23/58 , H01L2924/0002 , H01L2924/00
摘要： A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.
摘要翻译：来自图案形成装置的图案通过光刻装置施加到基板。应用模式包括产品功能和计量目标。测量目标包括大目标和小目标，用于测量覆盖。一些较小的目标分布在较大目标之间的位置，而其他小目标则放置在与大目标相同的位置。通过比较在相同位置使用小目标和大目标测量的值，可以校正使用所有小目标测量的参数值以获得更高的精度。大型目标主要位于划线范围内，而小目标则分布在产品区域内。

2. 发明申请

US20130059240A1 Substrate and Patterning Device for Use in Metrology, Metrology Method and Device Manufacturing Method 有权
标题翻译：用于计量，计量方法和器件制造方法的基板和图案化装置
公开(公告)号：US20130059240A1
公开(公告)日：2013-03-07
申请号：US13401882
申请日：2012-02-22
申请人： Maurits Van Der Schaar , Patrick Warnaar , Kaustuve Bhattacharyya , Hendrik Jan Hidde Smilde , Michael Kubis
发明人： Maurits Van Der Schaar , Patrick Warnaar , Kaustuve Bhattacharyya , Hendrik Jan Hidde Smilde , Michael Kubis
IPC分类号： G01B11/14 , G03F7/20 , G03B27/00
CPC分类号： G03F9/7042 , G03F7/70616 , G03F7/70633 , G03F7/70683 , H01L23/544 , H01L23/58 , H01L2924/0002 , H01L2924/00
摘要： A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.
摘要翻译：来自图案形成装置的图案通过光刻装置施加到基板。应用模式包括产品功能和计量目标。测量目标包括大目标和小目标，用于测量覆盖。一些较小的目标分布在较大目标之间的位置，而其他小目标则放置在与大目标相同的位置。通过比较在相同位置使用小目标和大目标测量的值，可以校正使用所有小目标测量的参数值以获得更高的精度。大型目标主要位于划线范围内，而小目标则分布在产品区域内。

3. 发明申请

US20120044470A1 Substrate for Use in Metrology, Metrology Method and Device Manufacturing Method 审中-公开
标题翻译：用于计量，计量方法和设备制造方法的基板
公开(公告)号：US20120044470A1
公开(公告)日：2012-02-23
申请号：US13190998
申请日：2011-07-26
申请人： Hendrik Jan Hidde SMILDE , Maurits Van Der Schaar , Kaustuve Bhattacharyya
发明人： Hendrik Jan Hidde SMILDE , Maurits Van Der Schaar , Kaustuve Bhattacharyya
IPC分类号： G03B27/42 , G01N21/00
CPC分类号： G03F7/70683 , G03F1/44 , G03F7/70633
摘要： A pattern from a patterning device is applied to a substrate. The applied pattern includes device functional areas and metrology target areas. Each metrology target area comprises a plurality of individual grating portions, which are used for diffraction based overlay measurements or other diffraction based measurements. The gratings are of the small target type, which is small than an illumination spot used in the metrology. Each grating has an aspect ratio substantially greater than 1, meaning that a length in a direction perpendicular to the grating lines which is substantially greater than a width of the grating. Total target area can be reduced without loss of performance in the diffraction based metrology. A composite target can comprise a plurality of individual grating portions of different overlay biases. Using integer aspect ratios such as 2:1 or 4:1, grating portions of different directions can be packed efficiently into rectangular composite target areas.
摘要翻译：将来自图案形成装置的图案应用于基板。应用模式包括设备功能区域和计量目标区域。每个测量目标区域包括多个单独的光栅部分，其用于基于衍射的覆盖测量或其他基于衍射的测量。光栅是小目标类型，小于计量中使用的照明点。每个光栅具有基本上大于1的长宽比，这意味着在垂直于光栅线的方向上的长度大致大于光栅的宽度。可以减少总目标面积，而不会在基于衍射的计量学中失去性能。复合目标可以包括不同覆盖偏移的多个单独光栅部分。使用诸如2：1或4：1的整数长宽比，可以将不同方向的光栅部分有效地包装到矩形复合目标区域中。

4. 发明申请

US20120013881A1 Method and Apparatus for Determining an Overlay Error 有权
标题翻译：确定叠加误差的方法和装置
公开(公告)号：US20120013881A1
公开(公告)日：2012-01-19
申请号：US13181932
申请日：2011-07-13
申请人： Arie Jeffrey Den Boef , Maurits VAN DER SCHAAR , Andreas Fuchs , Martyn John Coogans , Kaustuve Bhattacharyya , Stephen Peter Morgan , Michael Kubis
发明人： Arie Jeffrey Den Boef , Maurits VAN DER SCHAAR , Andreas Fuchs , Martyn John Coogans , Kaustuve Bhattacharyya , Stephen Peter Morgan , Michael Kubis
IPC分类号： G03B27/54 , G06F19/00 , G01N21/47
CPC分类号： A01H1/06 , A01G22/00 , C12N15/8201 , G03B27/52 , G03B27/53 , G03F7/705 , G03F7/70633
摘要： A method of determining an overlay error. Measuring an overlay target having process-induced asymmetry. Constructing a model of the target. Modifying the model, e.g., by moving one of the structures to compensate for the asymmetry. Calculating an asymmetry-induced overlay error using the modified model. Determining an overlay error in a production target by subtracting the asymmetry-induced overlay error from a measured overlay error. In one example, the model is modified by varying asymmetry p(n′), p(n″) and the calculating an asymmetry-induced overlay error is repeated for a plurality of scatterometer measurement recipes and the step of determining an overlay error in a production target uses the calculated asymmetry-induced overlay errors to select an optimum scatterometer measurement recipe used to measure the production target.
摘要翻译：确定重叠错误的方法。测量具有过程引起的不对称性的覆盖目标。构建目标模型。修改模型，例如通过移动结构之一来补偿不对称性。使用修改的模型计算不对称引起的覆盖误差。通过从测量的重叠错误中减去不对称引起的覆盖误差来确定生产目标中的重叠错误。在一个示例中，通过改变不对称p（n'），p（n“）来修改模型，并且针对多个散射仪测量配方重复计算不对称引起的重叠误差，并且确定在生产目标使用计算的不对称引起的重叠误差来选择用于测量生产目标的最佳散射仪测量配方。

5. 发明授权

US08908147B2 Method and apparatus for determining an overlay error 有权
标题翻译：用于确定覆盖误差的方法和装置
公开(公告)号：US08908147B2
公开(公告)日：2014-12-09
申请号：US13181932
申请日：2011-07-13
申请人： Arie Jeffrey Den Boef , Maurits Van Der Schaar , Andreas Fuchs , Martyn John Coogans , Kaustuve Bhattacharyya , Stephen Peter Morgan , Michael Kubis
发明人： Arie Jeffrey Den Boef , Maurits Van Der Schaar , Andreas Fuchs , Martyn John Coogans , Kaustuve Bhattacharyya , Stephen Peter Morgan , Michael Kubis
IPC分类号： G03F7/20 , A01H1/06 , G03B27/52 , G03B27/53 , A01G1/00 , C12N15/82
CPC分类号： A01H1/06 , A01G22/00 , C12N15/8201 , G03B27/52 , G03B27/53 , G03F7/705 , G03F7/70633
摘要： A method of determining an overlay error. Measuring an overlay target having process-induced asymmetry. Constructing a model of the target. Modifying the model, e.g., by moving one of the structures to compensate for the asymmetry. Calculating an asymmetry-induced overlay error using the modified model. Determining an overlay error in a production target by subtracting the asymmetry-induced overlay error from a measured overlay error. In one example, the model is modified by varying asymmetry p(n′), p(n″) and the calculating an asymmetry-induced overlay error is repeated for a plurality of scatterometer measurement recipes and the step of determining an overlay error in a production target uses the calculated asymmetry-induced overlay errors to select an optimum scatterometer measurement recipe used to measure the production target.
摘要翻译：确定重叠错误的方法。测量具有过程引起的不对称性的覆盖目标。构建目标模型。修改模型，例如通过移动结构之一来补偿不对称性。使用修改的模型计算不对称引起的覆盖误差。通过从测量的重叠错误中减去不对称引起的覆盖误差来确定生产目标中的重叠错误。在一个示例中，通过改变不对称p（n'），p（n“）来修改模型，并且针对多个散射仪测量配方重复计算不对称引起的重叠误差，并且确定在生产目标使用计算的不对称引起的重叠误差来选择用于测量生产目标的最佳散射仪测量配方。

6. 发明授权

US09494872B2 Inspection method for lithography 有权
标题翻译：光刻检验方法
公开(公告)号：US09494872B2
公开(公告)日：2016-11-15
申请号：US13060390
申请日：2009-09-08
申请人： Kaustuve Bhattacharyya , Arie Jeffrey Den Boef , Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar
发明人： Kaustuve Bhattacharyya , Arie Jeffrey Den Boef , Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar
IPC分类号： G03F7/20
CPC分类号： G03F7/70633 , G03F7/70625
摘要： The present invention relates to an inspection apparatus and method which include projecting a measurement radiation beam onto a target on a substrate in order to measure the radiation reflected from the target and obtain information related to properties of the substrate. In the present embodiments, the measurement spot, which is the focused beam on the substrate, is larger than the target. Information regarding the radiation reflected from the target is kept and information regarding the radiation reflected from the surface around the target is eliminated. This is done either by having no reflecting (or no specularly reflecting) surfaces around the target or by having known structures around the target, the information from which may be recognized and removed from the total reflected beam. The reflected beam is measured in the pupil plane of the projector such that the information obtained is related to diffraction orders of the reflected beam and profile, critical dimension or overlay of structures on the substrate may be determined.
摘要翻译：本发明涉及一种检查装置和方法，其包括将测量辐射束投射到基板上的目标上，以便测量从目标反射的辐射，并获得与基板的特性有关的信息。在本实施例中，作为基板上的聚焦光束的测量点大于目标。关于从目标反射的辐射的信息被保留，并且关于从目标周围的表面反射的辐射的信息被消除。这可以通过在靶周围没有反射（或没有镜面反射）表面或通过在靶周围具有已知结构来完成，可以从总反射光束识别和去除信息。在投影仪的瞳平面中测量反射光束，使得所获得的信息与反射光束的衍射级和轮廓，基底上的结构的临界尺寸或重叠相关。

7. 发明申请

US20110229830A1 Inspection Method For Lithography 有权
标题翻译：光刻检验方法
公开(公告)号：US20110229830A1
公开(公告)日：2011-09-22
申请号：US13060390
申请日：2009-09-08
申请人： Kaustuve Bhattacharyya , Arie Jeffrey Den Boef , Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar
发明人： Kaustuve Bhattacharyya , Arie Jeffrey Den Boef , Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar
IPC分类号： G03F7/20 , G01N21/55 , G01B11/14 , G03B27/54
CPC分类号： G03F7/70633 , G03F7/70625
摘要： The present invention relates to an inspection apparatus and method which include projecting a measurement radiation beam onto a target on a substrate in order to measure the radiation reflected from the target and obtain information related to properties of the substrate. In the present embodiments, the measurement spot, which is the focused beam on the substrate, is larger than the target. Information regarding the radiation reflected from the target is kept and information regarding the radiation reflected from the surface around the target is eliminated. This is done either by having no reflecting (or no specularly reflecting) surfaces around the target or by having known structures around the target, the information from which may be recognized and removed from the total reflected beam. The reflected beam is measured in the pupil plane of the projector such that the information obtained is related to diffraction orders of the reflected beam and profile, critical dimension or overlay of structures on the substrate may be determined.
摘要翻译：本发明涉及一种检查装置和方法，其包括将测量辐射束投射到基板上的目标上，以便测量从目标反射的辐射，并获得与基板的特性有关的信息。在本实施例中，作为基板上的聚焦光束的测量点大于目标。关于从目标反射的辐射的信息被保留，并且关于从目标周围的表面反射的辐射的信息被消除。这可以通过在靶周围没有反射（或没有镜面反射）表面或通过在靶周围具有已知结构来完成，可以从总反射光束识别和去除信息。在投影仪的瞳平面中测量反射光束，使得所获得的信息与反射光束的衍射级和轮廓，基底上的结构的临界尺寸或重叠相关。

8. 发明授权

US07457454B1 Detailed grey scale inspection method and apparatus 有权
标题翻译：详细的灰度检查方法和装置
公开(公告)号：US07457454B1
公开(公告)日：2008-11-25
申请号：US10267016
申请日：2002-10-08
申请人： Kaustuve Bhattacharyya
发明人： Kaustuve Bhattacharyya
IPC分类号： G06K9/00 , G01R31/26 , G01L21/30
CPC分类号： G01N21/95607 , G06T7/0004
摘要： A method for inspecting semiconductor wafers and the like is presented. The method comprises initially determining a baseline greyscale difference, such as a greyscale plot or greyscale visual representation, for at least one baseline semiconductor wafer subjected to a process. The baseline greyscale difference represents a numerical difference between composite preprocessing and postprocessing greyscale representations of all pixels on the baseline semiconductor wafer. The method further comprises determining a preprocess greyscale representation for one wafer in the semiconductor wafer set and subjecting the one wafer in the semiconductor wafer set to the process, determining a postprocess greyscale representation of the one wafer in the semiconductor wafer set, and determining a difference for the one wafer in the semiconductor set. The difference represents any disparity between preprocess and postprocess greyscale representations of the one wafer in the semiconductor set. The method then compares the difference to the baseline greyscale difference.
摘要翻译：提出了一种用于检查半导体晶片等的方法。该方法包括对经受过程的至少一个基线半导体晶片最初确定基线灰度差，例如灰度图或灰度视觉表示。基线灰度差表示基准半导体晶圆上所有像素的复合预处理和后处理灰度表示之间的数值差异。该方法还包括确定半导体晶片组中的一个晶片的预处理灰度表示，并对半导体晶片组中的一个晶片进行处理，确定半导体晶片组中的一个晶片的后处理灰度表示，以及确定差异对于半导体集合中的一个晶片。差异表示半导体组中的一个晶片的预处理和后处理灰度表示之间的任何差异。然后，该方法将差异与基线灰度差进行比较。

9. 发明授权

US09223227B2 Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method 有权
标题翻译：检测装置和方法，光刻设备，光刻处理单元和器件制造方法
公开(公告)号：US09223227B2
公开(公告)日：2015-12-29
申请号：US13361349
申请日：2012-01-30
申请人： Kaustuve Bhattacharyya , Arie Jeffrey Den Boef , Stefan Carolus Jacobus Antonius Keij , Peter Clement Paul Vanoppen
发明人： Kaustuve Bhattacharyya , Arie Jeffrey Den Boef , Stefan Carolus Jacobus Antonius Keij , Peter Clement Paul Vanoppen
IPC分类号： G03B27/54 , G03F7/20 , G01N21/956
CPC分类号： G03F7/70625 , G01B2210/56 , G01N21/956 , G03F7/705 , G03F7/70633
摘要： Asymmetry properties of a periodic target on a substrate, such as a grating on a wafer, are determined. An inspection apparatus has a broadband illumination source with illumination beams point mirrored in the pupil plane of a high numerical aperture objective lens. The substrate and target are illuminated via the objective lens from a first direction and a second direction mirror reflected with respect to the plane of the substrate. A quad wedge optical device separately redirects diffraction orders of radiation scattered from the substrate and separates diffraction orders from illumination along each of the first and second directions. For example the zeroth and first orders are separated for each incident direction. After capture in multimode fibers, spectrometers are used to measure the intensity of the separately redirected diffraction orders as a function of wavelength.
摘要翻译：确定基板（例如晶片上的光栅）上的周期性靶的不对称性质。检查装置具有宽带照明源，其具有在高数值孔径物镜的光瞳平面中镜像的照明光束点。从第一方向通过物镜照射衬底和靶，并且相对于衬底的平面反射的第二方向镜。四楔形光学器件分别重新引导从衬底散射的辐射的衍射级，并沿着第一和第二方向沿着照射分离衍射级。例如，为每个事件方向分离第零个和第一个命令。在多模光纤捕获之后，使用光谱仪测量单独重定向的衍射级的强度作为波长的函数。

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