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1. 发明授权

US08208139B2 Alignment system and alignment marks for use therewith 有权
公开(公告)号：US08208139B2
公开(公告)日：2012-06-26
申请号：US12346063
申请日：2008-12-30
申请人： Edo Maria Hulsebos , Franciscus Godefridus Casper Bijnen , Patrick Warnaar
发明人： Edo Maria Hulsebos , Franciscus Godefridus Casper Bijnen , Patrick Warnaar
IPC分类号： G01B11/00
CPC分类号： G03B27/42 , G03F9/7003 , G03F9/7046 , G03F9/7049 , G03F9/7076 , G03F9/7088
摘要： A lithographic apparatus according to one embodiment of the invention includes an alignment system for aligning a substrate or a reticle. The alignment system includes a radiation source configured to illuminate an alignment mark on the substrate or on the reticle, the alignment mark comprising a maximum length sequence or a multi periodic coarse alignment mark. An alignment signal produced from the alignment mark is detected by a detection system. A processor determines an alignment position of the substrate or the reticle based on the alignment signal.

2. 发明授权

US08080462B2 Mark structure for coarse wafer alignment and method for manufacturing such a mark structure 有权
标题翻译：用于粗晶片对准的标记结构和用于制造这种标记结构的方法
公开(公告)号：US08080462B2
公开(公告)日：2011-12-20
申请号：US13160864
申请日：2011-06-15
申请人： Patrick Warnaar
发明人： Patrick Warnaar
IPC分类号： H01L21/76 , H01L23/544
CPC分类号： G03F9/7049 , G03F9/7076 , G03F9/7088
摘要： A method for forming a mark structure on a substrate comprising a plurality of lines. The lines extend parallel to each other in a first direction and are arranged with a pitch between each pair of lines that is directed in a second direction perpendicular to the first direction. The pitch between each pair of selected lines differs from the pitch between each other pair of selected lines.
摘要翻译：一种在包括多条线的基板上形成标记结构的方法。这些线在第一方向上彼此平行延伸，并且以垂直于第一方向的第二方向指向的每对线之间的间距布置。每对所选择的线之间的间距与彼此对选择的线之间的间距不同。

3. 发明授权

US08709687B2 Substrate and patterning device for use in metrology, metrology method and device manufacturing method 有权
标题翻译：用于计量，计量方法和器件制造方法的基板和图案形成装置
公开(公告)号：US08709687B2
公开(公告)日：2014-04-29
申请号：US13401882
申请日：2012-02-22
申请人： Maurits Van Der Schaar , Patrick Warnaar , Kaustuve Bhattacharyya , Hendrik Jan Hidde Smilde , Michael Kubis
发明人： Maurits Van Der Schaar , Patrick Warnaar , Kaustuve Bhattacharyya , Hendrik Jan Hidde Smilde , Michael Kubis
IPC分类号： G03F9/00
CPC分类号： G03F9/7042 , G03F7/70616 , G03F7/70633 , G03F7/70683 , H01L23/544 , H01L23/58 , H01L2924/0002 , H01L2924/00
摘要： A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.
摘要翻译：来自图案形成装置的图案通过光刻装置施加到基板。应用模式包括产品功能和计量目标。测量目标包括大目标和小目标，用于测量覆盖。一些较小的目标分布在较大目标之间的位置，而其他小目标则放置在与大目标相同的位置。通过比较在相同位置使用小目标和大目标测量的值，可以校正使用所有小目标测量的参数值以获得更高的精度。大型目标主要位于划线范围内，而小目标则分布在产品区域内。

4. 发明申请

US20120127452A1 METHOD FOR COARSE WAFER ALIGNMENT IN A LITHOGRAPHIC APPARATUS 审中-公开
标题翻译：方法在平面设备中进行粗糙对准
公开(公告)号：US20120127452A1
公开(公告)日：2012-05-24
申请号：US13360110
申请日：2012-01-27
申请人： Patrick WARNAAR , Franciscus Godefridus Bijnen
发明人： Patrick WARNAAR , Franciscus Godefridus Bijnen
IPC分类号： G03B27/58
CPC分类号： G03F9/7069 , G03F9/7076 , G03F9/7088
摘要： A method for alignment of a substrate, in which the substrate includes a mark in a scribe lane, and the scribe lane extends along a longitudinal direction as a first direction. The mark has a periodic structure in the first direction. The method includes providing an illumination beam for scanning the mark in a direction perpendicular to a direction of the mark's periodic structure along a first scan path across the mark, scanning the spot of the illumination beam along a second scan path across the mark, the second scan path being parallel to the first scan path, wherein the second scan path is shifted relative to the first scan path over a first shift that corresponds to a fraction of the repeating distance of the periodic structure.
摘要翻译：用于对准衬底的方法，其中衬底包括划线中的标记和划线，沿着纵向方向作为第一方向延伸。标记在第一方向上具有周期性结构。该方法包括提供照射光束，用于沿着与标记的周期结构的方向垂直的方向沿着标记的第一扫描路径扫描标记，沿着标记的第二扫描路径扫描照射光束的光点，第二扫描路径平行于第一扫描路径，其中第二扫描路径相对于对应于周期性结构的重复距离的一部分的第一移位相对于第一扫描路径移位。

5. 发明授权

US09140998B2 Metrology method and inspection apparatus, lithographic system and device manufacturing method 有权
标题翻译：计量方法和检验仪器，光刻系统和器件制造方法
公开(公告)号：US09140998B2
公开(公告)日：2015-09-22
申请号：US13294057
申请日：2011-11-10
申请人： Hendrik Jan Hidde Smilde , Arno Jan Bleeker , Patrick Warnaar , Willem Marie Julia Marcel Coene , Michael Kubis
发明人： Hendrik Jan Hidde Smilde , Arno Jan Bleeker , Patrick Warnaar , Willem Marie Julia Marcel Coene , Michael Kubis
IPC分类号： G06F17/00 , G06F15/18 , G01N21/55 , G03F7/20
CPC分类号： G03F7/70633 , G03F7/70483 , G03F7/70625 , G03F7/70641 , G06N99/005
摘要： Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.
摘要翻译：公开了用于测量由基板上的光刻工艺形成的目标结构的方法。目标内的光栅结构小于测量光学系统的照明点和视场。光学系统具有通向光瞳平面成像传感器的第一分支和通向基板平面成像传感器的第二分支。空间光调制器被布置在光学系统的第二分支的中间光瞳平面中。 SLM赋予可编程的衰减模式，其可用于校正第一和第二照明模式或成像之间的不对称性。通过使用特定的目标设计和机器学习过程，衰减模式也可以被编程为充当滤波器功能，增强对诸如焦点的特定参数的敏感性。

6. 发明授权

US09069264B2 Metrology method and apparatus, and device manufacturing method 有权
标题翻译：计量方法和装置以及装置制造方法
公开(公告)号：US09069264B2
公开(公告)日：2015-06-30
申请号：US13542319
申请日：2012-07-05
申请人： Patrick Warnaar , Mark Van Schijndel , Michael Kubis
发明人： Patrick Warnaar , Mark Van Schijndel , Michael Kubis
IPC分类号： G06K9/46 , G03F1/44 , G03F7/20 , G03B27/54
CPC分类号： G03F7/70633 , G03F1/44 , G03F7/70683
摘要： A target structure including a periodic structure is formed on a substrate. An image of the target structure is detected while illuminating the target structure with a beam of radiation, the image being formed using a first part of non-zero order diffracted radiation while excluding zero order diffracted radiation. Intensity values extracted from a region of interest within the image are used to determine a property of the periodic structure. A processing unit recognizes locations of a plurality of boundary features in the image of the target structure to identify regions of interest. The number of boundary features in each direction is at least twice a number of boundaries of periodic structures within the target structure. The accuracy of locating the region is greater than by recognizing only the boundaries of the periodic structure(s).
摘要翻译：包括周期性结构的靶结构形成在基板上。在用辐射束照射目标结构的同时检测目标结构的图像，该图像使用非零次衍射辐射的第一部分形成，同时排除零级衍射辐射。使用从图像内的感兴趣区域提取的强度值来确定周期性结构的性质。处理单元识别目标结构的图像中的多个边界特征的位置以识别感兴趣的区域。每个方向上边界特征的数量至少是目标结构内周期性结构边界数量的两倍。定位区域的精度大于仅识别周期性结构的边界。

7. 发明授权

US07989966B2 Mark structure for coarse wafer alignment and method for manufacturing such a mark structure 有权
标题翻译：用于粗晶片对准的标记结构和用于制造这种标记结构的方法
公开(公告)号：US07989966B2
公开(公告)日：2011-08-02
申请号：US12372092
申请日：2009-02-17
申请人： Patrick Warnaar
发明人： Patrick Warnaar
IPC分类号： H01L23/544 , H01L21/76 , H01L21/46
CPC分类号： G03F9/7049 , G03F9/7076 , G03F9/7088
摘要： A mark structure includes on a substrate, at least four lines. The lines extend parallel to each other in a first direction and are arranged with a pitch between each pair of lines that is directed in a second direction perpendicular to the first direction. The pitch between each pair of selected lines differs from the pitch between each other pair of selected lines.
摘要翻译：标记结构在基板上包括至少四条线。这些线在第一方向上彼此平行延伸，并且以垂直于第一方向的第二方向指向的每对线之间的间距布置。每对所选择的线之间的间距与彼此对选择的线之间的间距不同。

8. 发明申请

US20100123886A1 Lithographic Apparatus and Device Manufacturing Method 有权
标题翻译：光刻设备和器件制造方法
公开(公告)号：US20100123886A1
公开(公告)日：2010-05-20
申请号：US12621143
申请日：2009-11-18
申请人： Franciscus Godefridus Casper BIJNEN , Jozef Cornelis Antonius Roijers , Patrick Warnaar , Marc Van Kemenade , Hoite Pieter Theodoor Tolsma
发明人： Franciscus Godefridus Casper BIJNEN , Jozef Cornelis Antonius Roijers , Patrick Warnaar , Marc Van Kemenade , Hoite Pieter Theodoor Tolsma
IPC分类号： G03B27/42 , G03B27/32
CPC分类号： G03F9/7049 , G03F9/7003 , G03F9/7076 , G03F9/7084
摘要： A method for manufacturing a device includes providing a substrate, the substrate including a plurality of exposure fields, each exposure field including one or more target portions and at least one mark structure, the mark structure being arranged as positional mark for the exposure field; scanning and measuring the mark of each exposure field to obtain alignment information for the respective exposure field; determining an absolute position of each exposure field from the alignment information for the respective exposure field; determining a relative position of each exposure field with respect to at least one other exposure field by use of additional information on the relative parameters of the exposure field and the at least one other exposure field relative to each other; and combining the absolute positions and the determined relative positions into improved absolute positions for each of the plurality of exposure fields.
摘要翻译：一种制造器件的方法包括：提供衬底，所述衬底包括多个曝光场，每个曝光场包括一个或多个目标部分和至少一个标记结构，所述标记结构被布置为所述曝光场的位置标记; 扫描和测量每个曝光场的标记以获得相应曝光场的对准信息; 根据相应曝光场的对准信息确定每个曝光场的绝对位置; 通过使用关于相对于彼此的曝光场和至少一个其他曝光场的相对参数的附加信息来确定每个曝光场相对于至少一个其它曝光场的相对位置; 以及将所述绝对位置和所确定的相对位置组合为所述多个曝光场中的每一个的改进的绝对位置。

9. 发明申请

US20090212447A1 Mark Structure for Coarse Wafer Alignment and Method for Manufacturing Such a Mark Structure 有权
标题翻译：粗晶圆对准的标记结构和制造这种标记结构的方法
公开(公告)号：US20090212447A1
公开(公告)日：2009-08-27
申请号：US12372092
申请日：2009-02-17
申请人： Patrick WARNAAR
发明人： Patrick WARNAAR
IPC分类号： H01L23/544 , G01B11/02 , H01L21/66
CPC分类号： G03F9/7049 , G03F9/7076 , G03F9/7088
摘要： A mark structure includes on a substrate, at least four lines. The lines extend parallel to each other in a first direction and are arranged with a pitch between each pair of lines that is directed in a second direction perpendicular to the first direction. The pitch between each pair of selected lines differs from the pitch between each other pair of selected lines.
摘要翻译：标记结构在基板上包括至少四条线。这些线在第一方向上彼此平行延伸，并且以垂直于第一方向的第二方向指向的每对线之间的间距布置。每对所选择的线之间的间距与彼此对选择的线之间的间距不同。

10. 发明授权

US08867020B2 Metrology method and apparatus, and device manufacturing method 有权
标题翻译：计量方法和装置以及装置制造方法
公开(公告)号：US08867020B2
公开(公告)日：2014-10-21
申请号：US13235902
申请日：2011-09-19
申请人： Hendrik Jan Hidde Smilde , Patrick Warnaar
发明人： Hendrik Jan Hidde Smilde , Patrick Warnaar
IPC分类号： G03B27/54 , G03B27/42 , G03F7/20
CPC分类号： G03F9/00 , G03F7/70483 , G03F7/70633
摘要： Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating or other structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The position of an image of the component structure varies between measurements, and a first type of correction is applied to reduce the influence on the measured intensities, caused by differences in the optical path to and from different positions. A plurality of structures may be imaged simultaneously within the field of view of the optical system, and each corrected for its respective position. The measurements may comprise first and second images of the same target under different modes of illumination and/or imaging, for example in a dark field metrology application. A second type of correction may be applied to reduce the influence of asymmetry between the first and second modes of illumination or imaging, for example to permit a more accurate overly measurement in a semiconductor device manufacturing process.
摘要翻译：公开了用于测量由基板上的光刻工艺形成的目标结构的方法。目标内的光栅或其他结构小于测量光学系统的照明点和视场。组件结构的图像的位置在测量之间变化，并且应用第一类型的校正以减少由与来自不同位置的光路的差异引起的对测量的强度的影响。可以在光学系统的视野内同时成像多个结构，并且每个结构被校正为其各自的位置。测量可以包括在不同照明和/或成像模式下的相同目标的第一和第二图像，例如在暗场测量应用中。可以应用第二类型的校正来减少第一和第二照明模式或成像之间的不对称性的影响，例如以允许在半导体器件制造过程中更准确地过度测量。

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