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    • 9. 发明申请
    • METHOD FOR MANUFACTURING TRANSPARENT ELECTROCONDUCTIVE FILM
    • 制造透明电极膜的方法
    • US20140353140A1
    • 2014-12-04
    • US14361232
    • 2012-11-28
    • NITTO DENKO CORPORATION
    • Motoki HaishiYusuke YamamotoTomotake NashikiKazuaki Sasa
    • H01B13/00C23C14/35C23C14/08
    • H01B13/0036C23C14/086C23C14/35C23C14/5806G06F3/044G06F2203/04103H01B13/0016
    • Disclosed is a manufacturing method for a transparent electroconductive film having excellent light-transmitting properties and low specific resistance. The present invention provides a method of manufacturing a transparent electroconductive film which comprises a film substrate and a crystallized indium tin oxide layer formed on the film substrate. The method comprises: a step of placing the film substrate in a sputtering apparatus using an indium tin oxide as a target material, and depositing indium tin oxide including amorphous parts on the film substrate by a magnetron sputtering process in which a horizontal magnetic field on the target material is set to 50 mT or more; and a step of, after the step of depositing indium tin oxide including amorphous parts, subjecting the indium tin oxide including amorphous parts to a heating treatment to thereby crystallize the indium tin oxide including amorphous parts to form the crystallized indium tin oxide layer.
    • 公开了具有优异的透光性和低电阻率的透明导电膜的制造方法。 本发明提供一种制造透明导电膜的方法,该方法包括在基片上形成的薄膜基片和结晶的氧化铟锡层。 该方法包括:使用氧化铟锡作为目标材料将薄膜基板放置在溅射装置中,并通过磁控溅射工艺在膜基板上沉积包括非晶部分的氧化铟锡的步骤,其中在 目标材料设定为50mT以上; 以及在沉积包含非晶部分的氧化铟锡的步骤之后,对包括非晶部分的铟锡氧化物进行加热处理,从而使包含非晶部分的氧化铟锡结晶以形成结晶的氧化铟锡层。