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1. 发明申请

US20060197951A1 Diffraction order controlled overlay metrology 有权
$Diffraction order controlled overlay metrology$
标题翻译：衍射顺序控制重叠度量
公开(公告)号：US20060197951A1
公开(公告)日：2006-09-07
申请号：US11363755
申请日：2006-02-27
申请人： Aviv Frommer , Vladimir Levinski , Mark Smith , Jeffrey Byers , Chris Mack , Michael Adel
发明人： Aviv Frommer , Vladimir Levinski , Mark Smith , Jeffrey Byers , Chris Mack , Michael Adel
IPC分类号： G01B11/00
CPC分类号： G03F9/7049 , G03F7/70633 , G03F9/7088
摘要： In one embodiment, a system for imaging an acquisition target or an overlay or alignment semiconductor target is disclosed. The system includes a beam generator for directing at least one incident beam having a wavelength λ towards a periodic target having structures with a specific pitch p. A plurality of output beams are scattered from the periodic target in response to the at least one incident beam. The system further includes an imaging lens system for passing only a first and a second output beam from the target. The imaging system is adapted such that the angular separation between the captured beams, λ, and the pitch are selected to cause the first and second output beams to form a sinusoidal image. The system also includes a sensor for imaging the sinusoidal image or images, and a controller for causing the beam generator to direct the at least one incident beam towards the periodic target or targets, and for analyzing the sinusoidal image or images. In one application the detector detects a sinusoidal image of an acquisition target with the same pitch as the designed target and the controller analyzes the pitch of the sinusoidal image compared to design data to determine whether the target has been successfully acquired. In a second application a first and second periodic target that each have a specific pitch p are imaged so that the detector detects a first sinusoidal image of the first target and a second sinusoidal image of the second target and the controller analyzes the first and second sinusoidal image to determine whether the first and second targets have an overlay or alignment error.
摘要翻译：在一个实施例中，公开了一种用于对采集目标或覆盖或对准半导体目标进行成像的系统。该系统包括用于将具有波长λ的至少一个入射光束朝向具有特定间距p的结构的周期性目标引导的光束发生器。响应于至少一个入射光束，多个输出光束从周期性靶标散射。该系统还包括用于仅从目标通过第一和第二输出光束的成像透镜系统。成像系统被适配成使得捕获的光束λ和间距之间的角度间隔被选择为使得第一和第二输出光束形成正弦图像。该系统还包括用于对正弦图像或图像进行成像的传感器，以及控制器，用于使光束发生器将至少一个入射光束引向周期性目标或目标，并用于分析正弦图像或图像。在一个应用中，检测器以与设计目标相同的间距检测采集目标的正弦图像，并且控制器分析与设计数据相比的正弦图像的间距，以确定目标是否已被成功获取。在第二应用中，每个具有特定间距p的第一和第二周期性目标成像，使得检测器检测第一目标的第一正弦图像和第二目标的第二正弦图像，并且控制器分析第一和第二正弦曲线图像以确定第一和第二目标是否具有覆盖或对齐错误。

2. 发明申请

US20070096094A1 Methods and apparatus for designing and using micro-targets in overlay metrology 有权
标题翻译：在重叠计量中设计和使用微观目标的方法和设备
公开(公告)号：US20070096094A1
公开(公告)日：2007-05-03
申请号：US11329716
申请日：2006-01-10
申请人： Vladimir Levinski , Michael Adel , Aviv Frommer , Daniel Kandel
发明人： Vladimir Levinski , Michael Adel , Aviv Frommer , Daniel Kandel
IPC分类号： H01L23/58 , H01L21/66
CPC分类号： H01L23/544 , G03F7/70633 , H01L22/12 , H01L2223/54453 , H01L2223/5448 , H01L2924/0002 , H01L2924/00
摘要： Methods and apparatus for fabricating a semiconductor die including several target structures. A first layer is formed that includes one or more line or trench structures that extend in a first direction. A second layer is formed that includes one or more line or trench structures that extend in a second direction that is perpendicular to the first structure, such that a projection of the target structure along the first direction is independent of the second direction and a projection of the target structure along the second direction is independent of the first direction. A target structure and a method for generating a calibration curve are also described.
摘要翻译：用于制造包括几个目标结构的半导体管芯的方法和装置。形成第一层，其包括在第一方向上延伸的一个或多个线或沟槽结构。形成第二层，其包括在垂直于第一结构的第二方向上延伸的一个或多个线或沟槽结构，使得目标结构沿着第一方向的突起独立于第二方向和投影沿着第二方向的目标结构与第一方向无关。还描述了用于产生校准曲线的目标结构和方法。

3. 发明授权

US07684039B2 Overlay metrology using the near infra-red spectral range 有权
标题翻译：使用近红外光谱范围覆盖测量
公开(公告)号：US07684039B2
公开(公告)日：2010-03-23
申请号：US11557880
申请日：2006-11-08
申请人： Michael Adel , Aviv Frommer
发明人： Michael Adel , Aviv Frommer
IPC分类号： G01B11/00
CPC分类号： G01N21/956 , G01N2021/213 , G03F7/70633
摘要： A method and tool for conducting NIR overlay metrology is disclosed. Such methods involve generating a filtered illumination beam including NIR radiation and directing that illumination beam onto an overlay target to produce an optical signal that is detected and used to generate overlay metrology measurements. The method is particularly suited to substrate applications having layers of opaque material that are transmissive in the NIR range (e.g., amorphous carbon) and where NIR imaging is used to obtain overlay measurements. A tool implementation includes a means for generating a filtered illumination beam extending into the NIR range and a detector for receiving NIR signal from an NIR illuminated target and a computer for processing the signal data to obtain overlay metrology measurements.
摘要翻译：公开了一种用于进行NIR重叠测量的方法和工具。这样的方法涉及生成包括NIR辐射的滤波照明光束并将照明光束引导到覆盖目标上以产生被检测并用于生成覆盖度量测量的光信号。该方法特别适用于具有在NIR范围（例如无定形碳）中透射的不透明材料层的衬底应用，并且其中使用NIR成像来获得覆盖测量。工具实现包括用于生成延伸到NIR范围内的滤波照明光束的装置和用于从NIR照明目标接收NIR信号的检测器和用于处理信号数据以获得覆盖度量测量的计算机。

4. 发明申请

US20070187606A1 OVERLAY METROLOGY USING THE NEAR INFRA-RED SPECTRAL RANGE 有权
标题翻译：使用近红外光谱范围的覆盖度量
公开(公告)号：US20070187606A1
公开(公告)日：2007-08-16
申请号：US11557880
申请日：2006-11-08
申请人： Michael Adel , Aviv Frommer
发明人： Michael Adel , Aviv Frommer
IPC分类号： G01N21/35
CPC分类号： G01N21/956 , G01N2021/213 , G03F7/70633
摘要： A method and tool for conducting NIR overlay metrology is disclosed. Such methods involve generating a filtered illumination beam including NIR radiation and directing that illumination beam onto an overlay target to produce an optical signal that is detected and used to generate overlay metrology measurements. The method is particularly suited to substrate applications having layers of opaque material that are transmissive in the NIR range (e.g., amorphous carbon) and where NIR imaging is used to obtain overlay measurements. A tool implementation includes a means for generating a filtered illumination beam extending into the NIR range and a detector for receiving NIR signal from an NIR illuminated target and a computer for processing the signal data to obtain overlay metrology measurements.
摘要翻译：公开了一种用于进行NIR重叠测量的方法和工具。这样的方法涉及生成包括NIR辐射的滤波照明光束并将照明光束引导到覆盖目标上以产生被检测并用于生成覆盖度量测量的光信号。该方法特别适用于具有在NIR范围（例如无定形碳）中透射的不透明材料层的衬底应用，并且其中使用NIR成像来获得覆盖测量。工具实现包括用于生成延伸到NIR范围内的滤波照明光束的装置和用于从NIR照明目标接收NIR信号的检测器和用于处理信号数据以获得覆盖度量测量的计算机。

5. 发明授权

US06904189B2 Fast wavelength-selective switch elements and switch matrices 失效
标题翻译：快速波长选择开关元件和开关矩阵
公开(公告)号：US06904189B2
公开(公告)日：2005-06-07
申请号：US10079522
申请日：2002-02-22
申请人： Aviv Frommer , Ben-Zion Kopelovitz
发明人： Aviv Frommer , Ben-Zion Kopelovitz
IPC分类号： G02B6/35 , G02F1/313 , G02B6/00 , G02B6/26
CPC分类号： G02F1/3137 , G02B6/3546 , G02B6/3592 , G02F1/3136 , G02F2203/055 , G02F2203/07
摘要： Ultra fast, compact wavelength-selective 2×2 optical switches based on polarization splitters and preferably electro-optical polarization converters, and switch matrices based on such switches. The switches and switch matrices are preferably implemented on electro-optical substrates using planar light-wave circuit technology. Switch designs include switches comprised of two polarization splitters and two polarization converters, and a switch comprised of one polarization splitter and two polarization converters. In a preferred embodiment, a switch comprises a TE-barring polarization splitter, a TM-barring polarization splitter, and two electro-optical wavelength-selective polarization converters connected in parallel between the TE- and TM-barring polarization splitters, and is implemented on an electro-optical substrate such as InP, GaAs, LiNbO3 or LiTaO3 using planar lightwave circuit technology. A preferred embodiment of a switch matrix for connecting i optical inputs to i monitoring outputs and to j optical outputs comprises a plurality of i×j wavelength-selective 2×2 optical switches arranged in i rows and j columns, each optical switch including a TE-barring polarization splitter, a TM-barring polarization splitter, and two wavelength-selective polarization converters connected in parallel between the TE- and TM-barring polarization splitters. The switch matrix is also preferably implemented using planar lightwave circuit technology.
摘要翻译：基于极化分离器，优选电光偏振转换器的超快速，紧凑的波长选择性2x2光开关以及基于这种开关的开关矩阵。开关和开关矩阵优选地使用平面光波电路技术在电光基板上实现。开关设计包括由两个偏振分离器和两个偏振转换器组成的开关，以及包括一个偏振分离器和两个偏振转换器的开关。在一个优选实施例中，开关包括TE限制性偏振分离器，TM-限制偏振分离器和两个并联在TE-和TM-限制极化分离器之间的电光波长选择性偏振转换器，并且被实现在使用平面光波电路技术的诸如InP，GaAs，LiNbO 3或LiTaO 3 3的电光基板。用于将i个光输入连接到i个监控输出和j个光输出的开关矩阵的优选实施例包括以i行和j列布置的多个ixj波长选择性2×2光开关，每个光开关包括一个TE限制性偏振分离器，TM-限制性偏振分离器和两个波长选择性偏振转换器并联连接在TE-和TM-限制极化分离器之间。开关矩阵也优选地使用平面光波电路技术实现。

6. 发明授权

US07526749B2 Methods and apparatus for designing and using micro-targets in overlay metrology 有权
标题翻译：在重叠计量中设计和使用微观目标的方法和设备
公开(公告)号：US07526749B2
公开(公告)日：2009-04-28
申请号：US11329716
申请日：2006-01-10
申请人： Vladimir Levinski , Michael E. Adel , Aviv Frommer , Daniel Kandel
发明人： Vladimir Levinski , Michael E. Adel , Aviv Frommer , Daniel Kandel
IPC分类号： G06F17/50
CPC分类号： H01L23/544 , G03F7/70633 , H01L22/12 , H01L2223/54453 , H01L2223/5448 , H01L2924/0002 , H01L2924/00
摘要： Methods and apparatus for fabricating a semiconductor die including several target structures. A first layer is formed that includes one or more line or trench structures that extend in a first direction. A second layer is formed that includes one or more line or trench structures that extend in a second direction that is perpendicular to the first structure, such that a projection of the target structure along the first direction is independent of the second direction and a projection of the target structure along the second direction is independent of the first direction. A target structure and a method for generating a calibration curve are also described.
摘要翻译：用于制造包括几个目标结构的半导体管芯的方法和装置。形成第一层，其包括在第一方向上延伸的一个或多个线或沟槽结构。形成第二层，其包括在垂直于第一结构的第二方向上延伸的一个或多个线或沟槽结构，使得目标结构沿着第一方向的突起独立于第二方向和投影沿着第二方向的目标结构与第一方向无关。还描述了用于产生校准曲线的目标结构和方法。

7. 发明申请

US20070171749A1 DEVICE HAVING AN ARRAY OF NON-VOLATILE MEMORY CELLS AND A METHOD FOR ALTERING A STATE OF A NON-VOLATILE MEMORY CELL 审中-公开
标题翻译：具有非易失性记忆细胞阵列的装置和用于改变非易失性记忆细胞状态的方法
公开(公告)号：US20070171749A1
公开(公告)日：2007-07-26
申请号：US11626304
申请日：2007-01-23
申请人： Aviv Frommer
发明人： Aviv Frommer
IPC分类号： G11C13/04 , G11C11/34 , G11C7/00
CPC分类号： G11C16/18 , G11C13/047 , G11C16/16 , H01L25/167 , H01L27/115 , H01L27/11568 , H01L29/7881 , H01L2224/48091 , H01L2224/48247 , H01L2224/49113 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： An array of non-volatile memory cells and a method for altering a state of a non-volatile memory cell that comprises multiple terminals, a substrate, and a charge retainer surrounded by an insulator, the method includes: illuminating the substrate with light such as to create electron-hole pairs within a first portion of the substrate positioned deep within the substrate and to create electron-hole pairs within a second portion of the substrate located near an upper surface of the substrate; and applying at least one control voltage to at least one terminal of the non-volatile memory cell such as to cause charged particles created in the first portion and in the second portion to propagate towards the upper surface of the substrate and to be injected into the charge retainer.
摘要翻译：一种非易失性存储单元阵列和一种用于改变由绝缘体包围的多个端子，基板和电荷保持器的非易失性存储单元的状态的方法，该方法包括：用诸如在衬底的第一部分内形成电子 - 空穴对，并位于衬底的上表面附近的衬底的第二部分内形成电子 - 空穴对; 以及向所述非易失性存储单元的至少一个端子施加至少一个控制电压，以使得在所述第一部分和所述第二部分中产生的带电粒子向所述衬底的上表面传播并被注入到所述第一部分中。充电保持器。

8. 发明授权

US5939899A MOSFET substrate current logic 失效
标题翻译： MOSFET衬底电流逻辑
公开(公告)号：US5939899A
公开(公告)日：1999-08-17
申请号：US842123
申请日：1997-04-23
申请人： Aviv Frommer , Mark R. Pinto
发明人： Aviv Frommer , Mark R. Pinto
IPC分类号： H03K19/0944 , H03K19/094 , H03K19/20
CPC分类号： H03K19/0944
摘要： Logic devices of the present invention have one or more MOSFETs that are configured to operate in logic circuits, where voltages applied to the source and drain of each MOSFET are treated as logic inputs to the circuit and the resulting substrate current is treated as the logic output of the circuit. In one implementation, a MOSFET is configured in a circuit to operate as an XOR gate where a load resistor between the substrate and ground converts the substrate current into an output voltage. A sample-and-hold circuit samples and holds the output voltage to isolate the XOR gate thereby allowing DC power dissipation to be reduced. In another implementation, three MOSFETs are configured to operate as an "ORNAND" logic device that performs the logical addition of the OR function and the NAND function.
摘要翻译：本发明的逻辑器件具有被配置为在逻辑电路中操作的一个或多个MOSFET，其中施加到每个MOSFET的源极和漏极的电压被视为电路的逻辑输入，并且所得到的衬底电流被视为逻辑输出的电路。在一个实现中，MOSFET被配置在电路中以用作XOR门，其中衬底和地之间的负载电阻将衬底电流转换成输出电压。采样保持电路采样并保持输出电压以隔离异或门，从而可以降低直流功耗。在另一实现中，三个MOSFET被配置为作为执行OR功能和NAND功能的逻辑加法的“ORNAND”逻辑器件。

9. 发明授权

US07528953B2 Target acquisition and overlay metrology based on two diffracted orders imaging 有权
$Target acquisition and overlay metrology based on two diffracted orders imaging$
标题翻译：基于两个衍射成像的目标获取和覆盖计量
公开(公告)号：US07528953B2
公开(公告)日：2009-05-05
申请号：US11363755
申请日：2006-02-27
申请人： Aviv Frommer , Vladimir Levinski , Mark D. Smith , Jeffrey Byers , Chris A. Mack , Michael E. Adel
发明人： Aviv Frommer , Vladimir Levinski , Mark D. Smith , Jeffrey Byers , Chris A. Mack , Michael E. Adel
IPC分类号： G01B11/00 , G06K9/00
CPC分类号： G03F9/7049 , G03F7/70633 , G03F9/7088
摘要： In one embodiment, a system includes a beam generator for directing at least one incident beam having a wavelength λ towards a periodic target having structures with a specific pitch p. A plurality of output beams are scattered from the periodic target in response to the at least one incident beam. The system further includes an imaging lens system for passing only a first and a second output beam from the target. The imaging system is adapted such that the angular separation between the captured beams, λ, and the pitch are selected to cause the first and second output beams to form a sinusoidal image. The system also includes a sensor for imaging the sinusoidal image or images, and a controller for causing the beam generator to direct the at least one incident beam towards the periodic target or targets, and for analyzing the sinusoidal image or images.
摘要翻译：在一个实施例中，系统包括用于将具有波长λ的至少一个入射光束朝向具有特定间距p的结构的周期性目标的光束发生器。响应于至少一个入射光束，多个输出光束从周期性靶标散射。该系统还包括用于仅从目标通过第一和第二输出光束的成像透镜系统。成像系统被适配成使得捕获的光束λ和间距之间的角度间隔被选择为使得第一和第二输出光束形成正弦图像。该系统还包括用于对正弦图像或图像进行成像的传感器，以及控制器，用于使光束发生器将至少一个入射光束引向周期性目标或目标，并用于分析正弦图像或图像。

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